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21. 发明授权

US07968990B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07968990B2
公开(公告)日：2011-06-28
申请号：US11654704
申请日：2007-01-17
申请人： Junji Tanaka , Junichi Kasai , Kouichi Meguro , Masanori Onodera , Koji Taya
发明人： Junji Tanaka , Junichi Kasai , Kouichi Meguro , Masanori Onodera , Koji Taya
IPC分类号： H01L23/02
CPC分类号： H01L25/105 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of fabricating a semiconductor device includes: mounting a semiconductor chip on a substrate; forming an upper connection terminal on a side of the substrate on which the semiconductor chip is mounted; forming a resin seal portion that seals the semiconductor chip and the upper connection terminal so that an upper surface of the upper connection terminal is exposed; and shaping the upper connection terminal so that the upper surface of the upper connection terminal becomes lower than an upper surface of the resin seal portion.
摘要翻译：制造半导体器件的方法包括：将半导体芯片安装在基板上; 在其上安装有半导体芯片的基板的一侧上形成上连接端子; 形成密封半导体芯片和上连接端子以使上连接端子的上表面露出的树脂密封部; 并且使上连接端子成形，使得上连接端子的上表面变得低于树脂密封部分的上表面。

22. 发明申请

US20080169544A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080169544A1
公开(公告)日：2008-07-17
申请号：US11654704
申请日：2007-01-17
申请人： Junji Tanaka , Junichi Kasai , Kouichi Meguro , Masanori Onodera , Koji Taya
发明人： Junji Tanaka , Junichi Kasai , Kouichi Meguro , Masanori Onodera , Koji Taya
IPC分类号： H01L23/02 , H01L21/00
CPC分类号： H01L25/105 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of fabricating a semiconductor device includes: mounting a semiconductor chip on a substrate; forming an upper connection terminal on a side of the substrate on which the semiconductor chip is mounted; forming a resin seal portion that seals the semiconductor chip and the upper connection terminal so that an upper surface of the upper connection terminal is exposed; and shaping the upper connection terminal so that the upper surface of the upper connection terminal becomes lower than an upper surface of the resin seal portion.
摘要翻译：制造半导体器件的方法包括：将半导体芯片安装在基板上; 在其上安装有半导体芯片的基板的一侧上形成上连接端子; 形成密封半导体芯片和上连接端子以使上连接端子的上表面露出的树脂密封部; 并且使上连接端子成形，使得上连接端子的上表面变得低于树脂密封部分的上表面。

23. 发明授权

US06881611B1 Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device 有权
标题翻译：用于制造半导体器件的方法和模具，半导体器件和用于安装器件的方法
公开(公告)号：US06881611B1
公开(公告)日：2005-04-19
申请号：US09635124
申请日：2000-08-08
申请人： Norio Fukasawa , Toshimi Kawahara , Muneharu Morioka , Mitsunada Osawa , Yasuhiro Shinma , Hirohisa Matsuki , Masanori Onodera , Junichi Kasai , Shigeyuki Maruyama , Masao Sakuma , Yoshimi Suzuki , Masashi Takenaka
发明人： Norio Fukasawa , Toshimi Kawahara , Muneharu Morioka , Mitsunada Osawa , Yasuhiro Shinma , Hirohisa Matsuki , Masanori Onodera , Junichi Kasai , Shigeyuki Maruyama , Masao Sakuma , Yoshimi Suzuki , Masashi Takenaka
IPC分类号： B29C43/18 , H01L21/301 , H01L21/56 , H01L21/68 , H01L23/24 , H01L23/31 , H01L23/495 , H01L23/498 , H01L25/065 , H01L25/10 , H01L29/06 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68377 , H01L2224/02371 , H01L2224/04105 , H01L2224/13022 , H01L2224/13024 , H01L2224/16225 , H01L2224/16235 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/83101 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0134 , H01L2924/15174 , H01L2924/15184 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3011 , H01L2924/3511 , H01L2924/00 , H01L2924/01028 , H01L2924/01051 , H01L2924/3512 , H01L2224/05599 , H01L2924/00012
摘要： A method includes a resin sealing step of placing, in a cavity 28 of a mold 20, a substrate 16 to which semiconductor elements 11 on which bumps 12 are arranged, a resin sealing step of supplying resin 35 to positions of the bumps 12 so that a resin layer 13 sealing the bumps 12 is formed, a protruding electrode exposing step of exposing at least ends of the bumps 12 sealed by the resin layer 13 so that ends of the bumps 12 are exposed from the resin layer 13, and a separating step of cutting the substrate 16 together with the resin layer 13 so that the semiconductor elements 11 are separated from each other.
摘要翻译：一种方法包括：树脂密封步骤，在模具20的空腔28中，将布置有凸块12的半导体元件11的基板16设置在树脂密封步骤中，将树脂35供应到凸块12的位置，使得形成密封凸块12的树脂层13，使由树脂层13密封的凸块12的至少端部露出使突出部12的端部从树脂层13露出的突出电极曝光工序，以及分离工序与树脂层13一起切割基板16，使得半导体元件11彼此分离。

24. 发明授权

US07884630B2 IC carrie, IC socket and method for testing IC device 有权
标题翻译： IC载体，IC插座和IC器件测试方法
公开(公告)号：US07884630B2
公开(公告)日：2011-02-08
申请号：US11886139
申请日：2005-03-11
申请人： Eichi Osato , Junichi Kasai , Kouichi Meguro , Masanori Onodera
发明人： Eichi Osato , Junichi Kasai , Kouichi Meguro , Masanori Onodera
IPC分类号： G01R31/02
CPC分类号： G01R1/0483 , G01R1/0466
摘要： An IC device (10) held on an IC carrier (24) is a double-sided electrode type BGA IC device (10) provided with bump electrodes (14) on a first surface of a package. The IC device has, on a second surface opposite the first surface, (a) a central protrusion (30), (b) a peripheral portion (32) lower than the protrusion by one step, and (c) upper electrodes (18) formed on the peripheral portion of the IC device. The IC carrier is provided with a frame (36), a cover (40), and a holding means (42). The frame forms a device reception space (38) for receiving the IC device. The cover can cover the upper electrodes while in contact with the periphery of the IC device held on the IC carrier. The holding means can hold the IC device on the IC carrier with the cover covering the upper electrodes of the IC device. The IC device can be set in an IC socket while being mounted on the IC carrier.
摘要翻译：保持在IC载体（24）上的IC器件（10）是在封装的第一表面上设置有凸块电极（14）的双面电极型BGA IC器件（10）。 IC器件在与第一表面相对的第二表面上具有（a）中心突起（30），（b）比突起低一级的周边部分（32），（c）上电极（18）形成在IC器件的周边部分上。 IC载体设有框架（36），盖（40）和保持装置（42）。该帧形成用于接收IC设备的设备接收空间（38）。盖可以覆盖上电极，同时与保持在IC载体上的IC器件的周边接触。保持装置可以将IC器件保持在IC载体上，盖子覆盖IC器件的上部电极。该IC器件可以安装在IC载体上而设置在IC插座中。

25. 发明申请

US20060220208A1 Stacked-type semiconductor device and method of manufacturing the same 审中-公开
标题翻译：叠层型半导体器件及其制造方法
公开(公告)号：US20060220208A1
公开(公告)日：2006-10-05
申请号：US11394986
申请日：2006-03-30
申请人： Masanori Onodera , Kouichi Meguro , Junichi Kasai
发明人： Masanori Onodera , Kouichi Meguro , Junichi Kasai
IPC分类号： H01L23/02
CPC分类号： H01L23/3135 , H01L23/3128 , H01L24/48 , H01L24/73 , H01L25/03 , H01L25/105 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2225/1023 , H01L2225/1052 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/4554
摘要： A semiconductor device of a stacked type includes a semiconductor chip (1) that is mounted on a substrate (4), a first sealing resin (12) that seals the semiconductor chip (1), a built-in semiconductor device (9) that is placed on the first sealing resin (12), and a second sealing resin (13) that is formed on the substrate (4) and seals the semiconductor chip (1) and the built-in semiconductor device (9). In this semiconductor device, the semiconductor chip (1) and the built-in semiconductor device (9) are electrically connected to the substrate by bonding wires (3).
摘要翻译：叠层型半导体器件包括安装在基板（4）上的半导体芯片（1），密封半导体芯片（1）的第一密封树脂（12），内置的半导体器件（9）放置在第一密封树脂（12）和形成在基板（4）上并密封半导体芯片（1）和内置半导体器件（9）的第二密封树脂（13）。在该半导体器件中，半导体芯片（1）和内置半导体器件（9）通过接合线（3）与基板电连接。

26. 发明授权

US07683473B2 Semiconductor device, fabrication method therefor, and film fabrication method 有权
标题翻译：半导体器件及其制造方法以及膜制造方法
公开(公告)号：US07683473B2
公开(公告)日：2010-03-23
申请号：US11540034
申请日：2006-09-28
申请人： Junichi Kasai , Kouichi Meguro , Masanori Onodera
发明人： Junichi Kasai , Kouichi Meguro , Masanori Onodera
IPC分类号： H01L23/04 , H01L21/30
CPC分类号： H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/481 , H01L23/49827 , H01L24/48 , H01L24/73 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73257 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19104 , H05K3/323 , H05K2203/107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.
摘要翻译：本发明提供一种半导体器件及其制造方法和膜制造方法，该半导体器件包括第一衬底（例如，半导体芯片），各向异性导电膜，其设置在第一衬底上并具有布线图案具有通过各向异性导电膜提供导电的至少一部分，以及设置在各向异性导电膜上的第二基板（半导体芯片），并且经由各向异性导电膜提供导电的部分与第一基板耦合。根据本发明，可以提供一种半导体器件及其制造方法和薄膜制造方法，通过该方法可以降低在上下基板中电连接不同位置的生产成本。

27. 发明申请

US20080191723A1 Ic Carrier, Ic Socket and Method for Testing Ic Device 有权
标题翻译： Ic载体，Ic插座和Ic器件测试方法
公开(公告)号：US20080191723A1
公开(公告)日：2008-08-14
申请号：US11886139
申请日：2005-03-11
申请人： Eichi Osato , Junichi Kasai , Kouichi Meguro , Masanori Onodera
发明人： Eichi Osato , Junichi Kasai , Kouichi Meguro , Masanori Onodera
IPC分类号： G01R31/02 , H05K7/00
CPC分类号： G01R1/0483 , G01R1/0466
摘要： An IC device (10) held on an IC carrier (24) is a double-sided electrode type BGA IC device (10) provided with bump electrodes (14) on a first surface of a package. The IC device has, on a second surface opposite the first surface, (a) a central protrusion (30), (b) a peripheral portion (32) lower than the protrusion by one step, and (c) upper electrodes (18) formed on the peripheral portion of the IC device. The IC carrier is provided with a frame (36), a cover (40), and a holding means (42). The frame forms a device reception space (38) for receiving the IC device. The cover can cover the upper electrodes while in contact with the periphery of the IC device held on the IC carrier. The holding means can hold the IC device on the IC carrier with the cover covering the upper electrodes of the IC device. The IC device can be set in an IC socket while being mounted on the IC carrier.
摘要翻译：保持在IC载体（24）上的IC器件（10）是在封装的第一表面上设置有凸块电极（14）的双面电极型BGA IC器件（10）。 IC器件在与第一表面相对的第二表面上具有（a）中心突起（30），（b）比突起低一级的周边部分（32），（c）上电极（18）形成在IC器件的周边部分上。 IC载体设有框架（36），盖（40）和保持装置（42）。该帧形成用于接收IC设备的设备接收空间（38）。盖可以覆盖上电极，同时与保持在IC载体上的IC器件的周边接触。保持装置可以将IC器件保持在IC载体上，盖子覆盖IC器件的上部电极。该IC器件可以安装在IC载体上而设置在IC插座中。

28. 发明申请

US20070105304A1 Semiconductor device, fabrication method therefor, and film fabrication method 有权
标题翻译：半导体器件及其制造方法以及膜制造方法
公开(公告)号：US20070105304A1
公开(公告)日：2007-05-10
申请号：US11540034
申请日：2006-09-28
申请人： Junichi Kasai , Kouichi Meguro , Masanori Onodera
发明人： Junichi Kasai , Kouichi Meguro , Masanori Onodera
IPC分类号： H01L21/8242 , H01L29/76
CPC分类号： H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/481 , H01L23/49827 , H01L24/48 , H01L24/73 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73257 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19104 , H05K3/323 , H05K2203/107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.
摘要翻译：本发明提供一种半导体器件及其制造方法和膜制造方法，该半导体器件包括第一衬底（例如，半导体芯片），各向异性导电膜，其设置在第一衬底上并具有布线图案具有通过各向异性导电膜提供导电的至少一部分，以及设置在各向异性导电膜上的第二基板（半导体芯片），并且经由各向异性导电膜提供导电的部分与第一基板耦合。根据本发明，可以提供一种半导体器件及其制造方法和薄膜制造方法，通过该方法可以降低在上下基板中电连接不同位置的生产成本。

29. 发明授权

US5747874A Semiconductor device, base member for semiconductor device and semiconductor device unit 失效
标题翻译：半导体器件，半导体器件用基板和半导体器件单元
公开(公告)号：US5747874A
公开(公告)日：1998-05-05
申请号：US529784
申请日：1995-09-18
申请人： Masaaki Seki , Michio Sono , Ichiro Yamaguchi , Kazuhiko Mitobe , Lim Cheang Hai , Koki Otake , Susumu Abe , Junichi Kasai , Masao Sakuma , Yoshimi Suzuki , Yasuhiro Shinma
发明人： Masaaki Seki , Michio Sono , Ichiro Yamaguchi , Kazuhiko Mitobe , Lim Cheang Hai , Koki Otake , Susumu Abe , Junichi Kasai , Masao Sakuma , Yoshimi Suzuki , Yasuhiro Shinma
IPC分类号： H01L23/13 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/10 , H01L23/02
CPC分类号： H01L23/49816 , H01L23/13 , H01L23/3128 , H01L23/49805 , H01L25/105 , H01L2224/32225 , H01L2224/48227 , H01L2224/48247 , H01L2224/49109 , H01L2224/73265 , H01L2224/83385 , H01L2224/8547 , H01L2225/1023 , H01L2225/1041 , H01L2225/1094 , H01L23/5387 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/19107
摘要： A semiconductor device includes a semiconductor element, a semiconductor device base member having an element mounting portion on which the semiconductor element is mounted, external connection terminals provided on the semiconductor device base member and electrically connected to the semiconductor element, and a resin sealing the semiconductor element. The semiconductor device base member includes a base part and lead parts supported by the base part. The lead parts are electrically connected to the external connection terminals. The semiconductor device base member has bent portions in which the lead parts are located on outer sides of the semiconductor device base member. The bent portions are located in edge portions of the semiconductor device base member.
摘要翻译：半导体器件包括半导体元件，半导体器件基底元件，其具有安装有半导体元件的元件安装部分，设置在半导体器件基底元件上并与半导体元件电连接的外部连接端子，以及密封半导体元件的树脂元件。半导体器件基底部件包括基部和由基部支撑的引线部。引线部分电连接到外部连接端子。半导体器件基体具有弯曲部分，其中引线部分位于半导体器件基底部件的外侧。弯曲部分位于半导体器件基底部件的边缘部分。

30. 发明授权

US6022759A Method for producing a semiconductor device, base member for semiconductor device and semiconductor device unit 失效
标题翻译：半导体装置的制造方法，半导体装置用基板和半导体装置装置
公开(公告)号：US6022759A
公开(公告)日：2000-02-08
申请号：US25327
申请日：1998-02-18
申请人： Masaaki Seki , Michio Sono , Ichiro Yamaguchi , Kazuhiko Mitobe , Lim Cheang Hai , Koki Otake , Susumu Abe , Junichi Kasai , Masao Sakuma , Yoshimi Suzuki , Yasuhiro Shinma
发明人： Masaaki Seki , Michio Sono , Ichiro Yamaguchi , Kazuhiko Mitobe , Lim Cheang Hai , Koki Otake , Susumu Abe , Junichi Kasai , Masao Sakuma , Yoshimi Suzuki , Yasuhiro Shinma
IPC分类号： H01L23/13 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/10 , H01L21/44 , H01L21/58
CPC分类号： H01L23/49816 , H01L23/13 , H01L23/3128 , H01L23/49805 , H01L25/105 , H01L2224/32225 , H01L2224/48227 , H01L2224/48247 , H01L2224/49109 , H01L2224/73265 , H01L2224/83385 , H01L2224/8547 , H01L2225/1023 , H01L2225/1041 , H01L2225/1094 , H01L23/5387 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/19107
摘要： A semiconductor device includes a semiconductor element, a semiconductor device base member having an element mounting portion on which the semiconductor element is mounted, external connection terminals provided on the semiconductor device base member and electrically connected to the semiconductor element, and a resin sealing the semiconductor element. The semiconductor device base member includes a base part and lead parts supported by the base part. The lead parts are electrically connected to the external connection terminals. The semiconductor device base member has bent portions in which the lead parts are located on outer sides of the semiconductor device base member. The bent portions are located in edge portions of the semiconductor device base member.
摘要翻译：半导体器件包括半导体元件，半导体器件基底元件，其具有安装半导体元件的元件安装部分，设置在半导体器件基底元件上并与半导体元件电连接的外部连接端子，以及密封半导体元件的树脂元件。半导体器件基底部件包括基部和由基部支撑的引线部。引线部分电连接到外部连接端子。半导体器件基体具有弯曲部分，其中引线部分位于半导体器件基底部件的外侧。弯曲部分位于半导体器件基底部件的边缘部分。

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