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21. 发明授权

US5872863A Component detection method 失效
标题翻译：元件检测方法
公开(公告)号：US5872863A
公开(公告)日：1999-02-16
申请号：US69203
申请日：1998-04-29
申请人： Yasutaka Tsuboi , Junichi Hada , Masamichi Morimoto
发明人： Yasutaka Tsuboi , Junichi Hada , Masamichi Morimoto
IPC分类号： G01B11/00 , G06T1/00 , G06T7/60 , H01L21/60 , H01L21/68 , G06K9/00
CPC分类号： G06T7/606 , G06T2207/30108
摘要： It is intended to accurately detect the centerline or center of electronic component by relieving effects of brightness or darkness or the like caused by the shape or color of the component, irregularity on the surface or how illuminance is projected on the component through statistical processing. To this end, the present invention comprises a first step for determining edge points of opposing sides of said component, a second step for determining two-dimensional coordinate axes which are established to make a deflection angle of said component zero, a third step for projecting the center position of two edge points in total each of which is arbitrarily selected from each side to a coordinate axis of said two-dimensional coordinate axes orthogonal to said opposing sides, and creating a histogram on said coordinate axis by projecting and adding the positions of center repeatedly obtained onto said coordinate axis, and a fourth step for detecting the peak position of the histogram obtained from the result of processing of said third step, and determining a line passing through the peak position and parallel to said opposing sides as the centerline of component.
摘要翻译：旨在通过减轻由组件的形状或颜色，表面上的不规则性或如何通过统计处理在组件上投射照明而引起的亮度或黑暗等的影响来精确地检测电子部件的中心线或中心。为此，本发明包括用于确定所述部件的相对侧边缘点的第一步骤，用于确定建立以使所述零件零偏转角度建立的二维坐标轴的第二步骤，用于突出所述零件的偏转角度的第三步骤总共两个边缘点的中心位置，每个边缘点从每侧相互垂直于所述相对侧的所述二维坐标轴的坐标轴任意选择，并且通过投影和添加所述坐标轴的位置来创建直方图重复获得的中心到所述坐标轴上的第四步骤，以及用于检测从所述第三步骤的处理结果获得的直方图的峰值位置的第四步骤，并且确定通过峰值位置并平行于所述相对侧的线作为中心线零件。

22. 发明授权

US4981372A Component shape recognition method 失效
标题翻译：元件形状识别方法
公开(公告)号：US4981372A
公开(公告)日：1991-01-01
申请号：US260998
申请日：1988-10-21
申请人： Masamichi Morimoto , Kazumasa Okumura , Akira Mohri , Daisuke Ohkawara
发明人： Masamichi Morimoto , Kazumasa Okumura , Akira Mohri , Daisuke Ohkawara
IPC分类号： G06T7/60 , G06K9/32 , G06K9/48
CPC分类号： G06K9/48 , G06K9/32
摘要： A boundary of leads of an integrated circuit component shown by binary picture elements on a recognition plane of an image display means is detected by a conventional boundary detecting method, and respective corners of the leads are detected on the basis of variation of an angle between a predetermined axis and a line connecting two picture elements having a predetermined distance from each other on the boundary. Moreover, a shape of the lead is recognized on the basis of the shapes of the corners. Subsequently, a search zone containing a tip portion of one lead is set by referring the midpoint of the tip of the lead, and is scanned by horizonal scanning lines and vertical scanning lines. Then segments of both the scanning lines overlapping on the tip portion are obtained, and a protruding direction of the lead is detected referring to a segment touching on a boundary of a search zone. Furthermore, a midpoint of the tip is calculated from coordinate values of plural segments crossing the tip portion.
摘要翻译：通过传统的边界检测方法检测在图像显示装置的识别平面上由二进制图像元素示出的集成电路部件的引线的边界，并且基于a的角度的变化来检测引线的各个角预定轴线和在边界上连接彼此具有预定距离的两个图像元素的线。此外，基于角部的形状来识别引线的形状。随后，通过引用引线的尖端的中点来设置包含一个引线的尖端部分的搜索区域，并且通过水平扫描线和垂直扫描线扫描。然后，获得与尖端部分重叠的两条扫描线的段，并且根据在搜索区域的边界上触摸的段来检测引线的突出方向。此外，从与尖端部分交叉的多个片段的坐标值计算尖端的中点。

23. 发明授权

US4813016A Tunnel memory device having a multi-layered Langmuir-Blodgett film 失效
标题翻译：具有多层Langmuir-Blodgett薄膜的隧道存储装置
公开(公告)号：US4813016A
公开(公告)日：1989-03-14
申请号：US947504
申请日：1986-12-29
申请人： Takao Okada , Masamichi Morimoto
发明人： Takao Okada , Masamichi Morimoto
IPC分类号： H01L27/10 , G06F5/00 , G11C11/38 , G11C13/02 , G11C19/00 , G11C19/30 , H01L51/00 , H01L51/05 , H01L51/30 , H01L29/28
CPC分类号： H01L51/05 , B82Y10/00 , G11C13/0014 , H01L51/0075
摘要： A three-dimensional tunnel memory device includes a multilayer Langmuir-Blodgett film wherein each layer can store or carry an electric charge. Charges are introduced into one side of the film in a time sequence corresponding to the information to be carried. An electric field is applied between the faces of the film to cause the charge stored by any layer to be transferred to the adjacent layer, and for thus reading out the sequence of charges stored by the film. The multilayer Langmuir-Blodgett film includes memory unit cells each comprising Langmuir-Blodgett films formed, respectively, of different kinds of organic compounds and contacting each other. Electric fields of different magnitudes are applied, respectively, to the film constituting each memory unit cell thereby allowing the stored charge in each film constituting the memory unit cell to hop the tunnel barrier.
摘要翻译：三维隧道存储装置包括多层Langmuir-Blodgett膜，其中每层可存储或携带电荷。以对应于要携带的信息的时间顺序将电荷引入电影的一侧。在膜的面之间施加电场，使得由任何层存储的电荷被转移到相邻层，并且因此读出由膜存储的电荷序列。多层Langmuir-Blodgett膜包括记忆单元，每个记忆单元分别包含不同种类的有机化合物形成的Langmuir-Blodgett膜并彼此接触。分别对构成每个存储单元单元的胶片施加不同幅度的电场，从而允许构成存储单元单元的每个胶片中的存储电荷跳过隧道势垒。

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