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21. 发明授权

US08017302B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US08017302B2
公开(公告)日：2011-09-13
申请号：US12355418
申请日：2009-01-16
申请人： Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/122
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。树脂（A）是包含由式（1）表示的特定重复单元的聚合物。酸产生剂（B）是特定的锍盐化合物。当通过光刻处理时，组合物的分辨率提高并且形成具有最小LER的图案。本文中R1是H或甲基，R2是酸不稳定基团，当X是CH2时，R3是CO2R4，当X是O时，R3是H，CO2R4，R4是一价C1-C20烃基，m是1或2。

22. 发明授权

US08030515B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
标题翻译：磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US08030515B2
公开(公告)日：2011-10-04
申请号：US13043683
申请日：2011-03-09
申请人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： C07C309/08
CPC分类号： C07C381/12 , C07C309/08 , C07C381/00 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译：磺酸盐具有下式：HOCH2CH2CF2CF2SO3-M +，其中M +是Li，Na，K，铵或四甲基铵离子。衍生自这些盐的鎓盐，肟磺酸盐和磺酰氧基酰亚胺是化学放大抗蚀剂组合物中有效的光酸产生剂。

23. 发明授权

US07928262B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
公开(公告)号：US07928262B2
公开(公告)日：2011-04-19
申请号：US11767783
申请日：2007-06-25
申请人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： C07C309/08 , G03C1/00 , G03F7/00
CPC分类号： C07C381/12 , C07C309/08 , C07C381/00 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

24. 发明申请

US20100119970A1 Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权
标题翻译：阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺
公开(公告)号：US20100119970A1
公开(公告)日：2010-05-13
申请号：US12588590
申请日：2009-10-20
申请人： Youichi Ohsawa , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
发明人： Youichi Ohsawa , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/20 , C07C309/19 , C07C309/04 , G03F7/004
CPC分类号： C07C381/12 , C07C309/12 , C07C2603/74 , C07D307/93 , G03F7/0045 , G03F7/091
摘要： There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+ (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
摘要翻译：公开了一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层，其中抗蚀剂下层组合物变得不溶或形成下层后在碱性显影剂中难以溶解，并且其中抗蚀剂下层组合物至少包含通过在100℃的温度下加热产生由通式（1）表示的酸的热酸发生剂 ℃以上。 RCOO-CH 2 CF 2 SO 3 -H +（1）可以提供多层抗蚀剂法（特别是双层抗蚀剂法和三层抗蚀剂法）中的抗蚀剂下层组合物，该组合物用于形成层低于作为抗蚀剂上层膜的光致抗蚀剂层，该组合物在形成下层之后在碱性显影剂中变得不溶或难溶，并且该组合物能够形成抗蚀剂下层膜，中间层膜等具有较高的抗中毒作用并且对环境具有较低的负荷。

25. 发明授权

US07569324B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
标题翻译：磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US07569324B2
公开(公告)日：2009-08-04
申请号：US11767821
申请日：2007-06-25
申请人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/00 , G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： C07C381/12 , C07C309/00 , C07C309/12 , C07C2601/14 , C07C2603/74 , C07D207/48 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/114 , Y10S430/115
摘要： Sulfonate salts have the formula: R1COOCH2CH2CF2CF2SO3−M+ wherein R1 is alkyl, aryl or hetero-aryl, M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译：磺酸盐具有下式：R1COOCH2CH2CF2CF2SO3-M +，其中R1是烷基，芳基或杂芳基，M +是Li，Na，K，铵或四甲基铵离子。衍生自这些盐的鎓盐，肟磺酸盐和磺酰氧基酰亚胺是化学放大抗蚀剂组合物中有效的光酸产生剂。

26. 发明申请

US20090186298A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
标题翻译：积极的组合物和绘图过程
公开(公告)号：US20090186298A1
公开(公告)日：2009-07-23
申请号：US12355446
申请日：2009-01-16
申请人： Youichi OHSAWA , Takeshi Kinsho , Takeru Watanabe
发明人： Youichi OHSAWA , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。树脂（A）是包含由式（1）表示的特定重复单元的聚合物。酸产生剂（B）是特定的锍盐化合物。当通过光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度和最小LER的图案。本文中R1是H或甲基，R2是酸不稳定基团，当X是CH2时，R3是CO2R4，当X是O时，R3是H，CO2R4，R4是一价C1-C20烃基，m是1或2。

27. 发明申请

US20090186297A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
标题翻译：积极的组合物和绘图过程
公开(公告)号：US20090186297A1
公开(公告)日：2009-07-23
申请号：US12355418
申请日：2009-01-16
申请人： Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/122
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。树脂（A）是包含由式（1）表示的特定重复单元的聚合物。酸产生剂（B）是特定的锍盐化合物。当通过光刻处理时，组合物的分辨率提高并且形成具有最小LER的图案。本文中R1是H或甲基，R2是酸不稳定基团，当X是CH2时，R3是CO2R4，当X是O时，R3是H，CO2R4，R4是一价C1-C20烃基，m是1或2。

28. 发明授权

US07511169B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
标题翻译：磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US07511169B2
公开(公告)日：2009-03-31
申请号：US11397526
申请日：2006-04-05
申请人： Youichi Ohsawa , Takeru Watanabe , Takeshi Kinsho , Katsuhiro Kobayashi
发明人： Youichi Ohsawa , Takeru Watanabe , Takeshi Kinsho , Katsuhiro Kobayashi
IPC分类号： C07C309/06 , G03F7/004
CPC分类号： C07C309/12 , C07C381/12 , C07D307/64 , C07D307/68 , C07D333/46 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula: CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译：磺酸盐具有式：CF 3 -CH（OCOR）-CF 2 SO 3 -M +，其中R是C 1 -C 20烷基或C 6 -C 14芳基，M +是锂，钠，钾，铵或四甲基铵离子。鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。

29. 发明授权

US07527912B2 Photoacid generators, resist compositions, and patterning process 有权
标题翻译：光酸发生剂，抗蚀剂组合物和图案化工艺
公开(公告)号：US07527912B2
公开(公告)日：2009-05-05
申请号：US11905126
申请日：2007-09-27
申请人： Youichi Ohsawa , Takeru Watanabe , Koji Hasegawa , Masaki Ohashi
发明人： Youichi Ohsawa , Takeru Watanabe , Koji Hasegawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/30 , C07D207/00
CPC分类号： C07D333/46 , C07C309/12 , C07C381/12 , C07D207/408 , C07D209/48 , C07D209/70 , C07D307/93 , C07D491/18 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/70875 , Y10S430/106 , Y10S430/111 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(═O)R1—COOCH(CF3)CF2SO3−H+ (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R1 is a divalent organic group which may have a heteroatom (O, N or S) containing substituent, or R1 may form a cyclic structure with R. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
摘要翻译：光生酸发生剂在暴露于高能量辐射时产生式（1a）的磺酸。 RC（-O）R1-COOCH（CF3）CF2SO3-H +（1a）<？in-line-formula description =“In-line-formula description =”In-line formula“end =”lead“ R'是羟基，烷基，芳基，杂芳基，烷氧基，芳氧基或杂芳氧基，R 1是可以具有含有杂原子（O，N或S）的二价有机基团取代基或R1可以与R形成环状结构。光酸产生剂与树脂相容并且可以控制酸扩散，因此适用于化学增强抗蚀剂组合物。

30. 发明申请

US20080102407A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process 有权
标题翻译：具有可聚合阴离子的锍盐，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20080102407A1
公开(公告)日：2008-05-01
申请号：US11976564
申请日：2007-10-25
申请人： Youichi Ohsawa , Masaki Ohashi , Seiichiro Tachibana , Jun Hatakeyama , Takeru Watanabe
发明人： Youichi Ohsawa , Masaki Ohashi , Seiichiro Tachibana , Jun Hatakeyama , Takeru Watanabe
IPC分类号： G03C1/00 , G03C5/00
CPC分类号： G03F7/0045 , C08F20/22 , C08F20/38 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use in radiation-sensitive resist compositions is derived.
摘要翻译：具有可聚合阴离子的锍盐在暴露于高能量辐射下产生强烈的磺酸，从而有助于在化学增强的抗蚀剂组合物中有效地分裂酸不稳定基团。作为衍生用于辐射敏感性抗蚀剂组合物的基础树脂的单体是有用的。

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