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21. 发明申请

US20090206354A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20090206354A1
公开(公告)日：2009-08-20
申请号：US12230234
申请日：2008-08-26
申请人： Nobuaki Kitano , Masahiro Arai , Kazuyuki Iizuka
发明人： Nobuaki Kitano , Masahiro Arai , Kazuyuki Iizuka
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
摘要翻译：半导体发光器件包括支撑结构和发光结构。支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。发光结构包括结合到支撑基板侧接合层的发光结构侧接合层，设置在与支撑基板相对的支撑基板侧接合层上的反射区域，以及包括发光层设置在与发光结构侧接合层相对的反射区域，用于发射具有预定波长的光;以及光提取表面，设置在与反射区域相对的发光层上，用于漫反射地反射光。反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。

22. 发明申请

US20100301362A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20100301362A1
公开(公告)日：2010-12-02
申请号：US12662645
申请日：2010-04-27
申请人： Kazuyuki Iizuka , Masahiro Watanabe
发明人： Kazuyuki Iizuka , Masahiro Watanabe
IPC分类号： H01L33/46
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42
摘要： A semiconductor light emitting element includes a group III-V compound semiconductor layer, a first main surface and a second main surface, a reflection metal film formed on the second main surface, a front surface electrode formed on the first main surface, and an ohmic contact joint part formed between the reflection metal film and the group III-V compound semiconductor layer except a region directly under the front surface electrode. The ohmic contact joint part is disposed in a side of an outer peripheral part of the semiconductor light emitting element, formed so as to surround the front surface electrode when the ohmic contact joint part is viewed from a side of the front surface electrode, and disposed so that distance from each location of outer edge parts of the front surface electrode to the ohmic contact joint part nearest to the each location becomes equal to each other.
摘要翻译：半导体发光元件包括III-V族化合物半导体层，第一主表面和第二主表面，形成在第二主表面上的反射金属膜，形成在第一主表面上的前表面电极和欧姆接触部分形成在反射金属膜和III-V族化合物半导体层之外，除了正面电极正下方的区域。欧姆接触部分设置在半导体发光元件的外周部分的一侧，当从前表面电极的一侧观察欧姆接触部分时，形成为围绕前表面电极，并且设置使得从前表面电极的外边缘部分的每个位置到最接近每个位置的欧姆接触部分的距离彼此相等。

23. 发明申请

US20050042789A1 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device 有权
标题翻译：氮化物半导体，半导体晶片和半导体器件的制造方法
公开(公告)号：US20050042789A1
公开(公告)日：2005-02-24
申请号：US10875101
申请日：2004-06-24
申请人： Hajime Fujikura , Kazuyuki Iizuka
发明人： Hajime Fujikura , Kazuyuki Iizuka
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/205 , H01L33/16 , H01L33/32 , H01L21/00
CPC分类号： H01L21/02458 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0245 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L21/02661
摘要： A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400-600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700-1,300° C. after heat-treating said first nitride semiconductor layer at 700-1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.
摘要翻译：一种生产氮化物半导体的方法，包括在衬底上生长至少第一至第三氮化物半导体层; 所述第一氮化物半导体层在400-600℃下生长。并且所述第二和第三氮化物半导体层在700-1,300℃热处理所述第一氮化物半导体层之后在700-1300℃下在所述第一氮化物半导体层上生长。在生长所述第二氮化物半导体层期间用作在所述衬底附近供应的载气和起始原料气体，所述原料气体是含有63体积％或更多体积氢气的氢/氮混合气体，以及含有50％或在生长所述第三氮化物半导体层期间更多的氮的体积; 并且所述第二氮化物半导体层形成为大于1μm的厚度。

24. 发明授权

US06989287B2 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device 有权
标题翻译：氮化物半导体，半导体晶片和半导体器件的制造方法
公开(公告)号：US06989287B2
公开(公告)日：2006-01-24
申请号：US10875101
申请日：2004-06-24
申请人： Hajime Fujikura , Kazuyuki Iizuka
发明人： Hajime Fujikura , Kazuyuki Iizuka
IPC分类号： H01L21/00 , H01L21/338
CPC分类号： H01L21/02458 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0245 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L21/02661
摘要： A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400–600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700–1,300° C. after heat-treating said first nitride semiconductor layer at 700–1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.
摘要翻译：一种生产氮化物半导体的方法，包括在衬底上生长至少第一至第三氮化物半导体层; 所述第一氮化物半导体层在400-600℃下生长。并且所述第二和第三氮化物半导体层在700-1,300℃热处理所述第一氮化物半导体层之后在700-1300℃下在所述第一氮化物半导体层上生长。在生长所述第二氮化物半导体层期间用作在所述衬底附近供应的载气和起始原料气体，所述原料气体是含有63体积％或更多体积氢气的氢/氮混合气体，以及含有50％或在生长所述第三氮化物半导体层期间更多的氮的体积; 并且所述第二氮化物半导体层形成为大于1μm的厚度。

25. 发明申请

US20140048823A1 SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT 有权
标题翻译：半导体堆叠体，制造方法及半导体元件
公开(公告)号：US20140048823A1
公开(公告)日：2014-02-20
申请号：US14110417
申请日：2012-04-03
申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
发明人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C23C16/0218 , C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/267 , H01L29/7371 , H01L29/7788 , H01L29/7789 , H01L29/7827 , H01L29/8122 , H01L29/8128 , H01L29/872 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.
摘要翻译：一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有Ga 2 O 3基板，具有作为主面的以六方晶格排列有氧原子的平面，AlN 形成在Ga 2 O 3衬底上的缓冲层，以及形成在AIN缓冲层上的氮化物半导体层。

26. 发明授权

US07300643B2 Method for producing hydrogen and apparatus for supplying hydrogen 有权
标题翻译：用于生产氢的方法和用于供应氢的装置
公开(公告)号：US07300643B2
公开(公告)日：2007-11-27
申请号：US10473191
申请日：2002-04-01
申请人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
发明人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
IPC分类号： B01J7/00 , C01B3/10
CPC分类号： B01J8/0285 , B01J8/025 , B01J2208/00212 , B01J2208/00309 , B01J2208/00415 , B01J2208/00495 , B01J2208/00539 , C01B3/061 , C01B3/10 , Y02E60/36
摘要： With a method producing hydrogen by making iron or iron oxide contact water, water vapor, or a gas including water vapor, a hydrogen generating medium, which has a high hydrogen generation reaction rate and is resistant to a repetition of oxidation-reduction without degrading its activity, is provided by adding a different metal (such as Ti, Zr, V, Nb, Cr, Mo, Al, Ga, Mg, Sc, Ni, Cu, etc.) other than the iron to the iron or the iron oxide.
摘要翻译：通过使铁或氧化铁与水接触的方法，水蒸汽或包括水蒸汽的气体，产氢介质，氢生成反应速度高，耐重复氧化还原而不劣化活性通过向铁或氧化铁中添加除铁以外的不同的金属（例如Ti，Zr，V，Nb，Cr，Mo，Al，Ga，Mg，Sc，Ni，Cu等）。

27. 发明授权

US07294200B2 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device 有权
标题翻译：氮化物半导体晶体的制造方法以及氮化物半导体晶片和氮化物半导体装置
公开(公告)号：US07294200B2
公开(公告)日：2007-11-13
申请号：US10396831
申请日：2003-03-26
申请人： Hajime Fujikura , Kazuyuki Iizuka
发明人： Hajime Fujikura , Kazuyuki Iizuka
IPC分类号： C30B23/00 , H01L21/00 , H01L29/221
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate using the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.
摘要翻译：一种制造氮化物半导体晶体的方法，其包括步骤（a），（b）和（c），其顺序如下：步骤（a）用于在衬底上形成由氮化物半导体制成的微细晶粒; 用于形成氮化物半导体岛结构的步骤（b），所述氮化物半导体岛结构具有使用所述细晶粒子作为核的相对于所述衬底的表面倾斜的多个面; 以及用于使氮化物半导体岛结构在与衬底的表面平行的方向上生长以使多个氮化物半导体岛结构彼此合并从而形成具有平坦表面的氮化物半导体晶体层的步骤（c） ; 步骤（a） - （c）在相同的生长装置中连续进行。

28. 发明授权

US08120051B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08120051B2
公开(公告)日：2012-02-21
申请号：US12662645
申请日：2010-04-27
申请人： Kazuyuki Iizuka , Masahiro Watanabe
发明人： Kazuyuki Iizuka , Masahiro Watanabe
IPC分类号： H01L29/22
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42
摘要： A semiconductor light emitting element includes a group III-V compound semiconductor layer, a first main surface and a second main surface, a reflection metal film formed on the second main surface, a front surface electrode formed on the first main surface, and an ohmic contact joint part formed between the reflection metal film and the group III-V compound semiconductor layer except a region directly under the front surface electrode. The ohmic contact joint part is disposed in a side of an outer peripheral part of the semiconductor light emitting element, formed so as to surround the front surface electrode when the ohmic contact joint part is viewed from a side of the front surface electrode, and disposed so that distance from each location of outer edge parts of the front surface electrode to the ohmic contact joint part nearest to the each location becomes equal to each other.
摘要翻译：半导体发光元件包括III-V族化合物半导体层，第一主表面和第二主表面，形成在第二主表面上的反射金属膜，形成在第一主表面上的前表面电极和欧姆接触部分形成在反射金属膜和III-V族化合物半导体层之外，除了正面电极正下方的区域。欧姆接触部分设置在半导体发光元件的外周部分的一侧，当从前表面电极的一侧观察欧姆接触部分时，形成为围绕前表面电极，并且设置使得从前表面电极的外边缘部分的每个位置到最接近每个位置的欧姆接触部分的距离彼此相等。

29. 发明申请

US20060213331A1 Method for reducing metal oxide and method for producing hydrogen 审中-公开
标题翻译：还原金属氧化物的方法及其制造方法
公开(公告)号：US20060213331A1
公开(公告)日：2006-09-28
申请号：US10556171
申请日：2004-02-24
申请人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
发明人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
IPC分类号： C22B23/00 , C22B11/02 , C22B15/00 , C01B3/02
CPC分类号： C22B5/12 , C01B3/061 , Y02E60/364
摘要： A method for reducing a metal oxide and a method for manufacturing hydrogen are provided for easily reducing an oxide of a metal that decomposes water to generate hydrogen, using a gas that includes hydrocarbons, such as municipal gas. The method for reducing the metal oxide includes the step of reducing, using a reducing gas that includes hydrocarbons, a medium comprising an oxide of a metal that decomposes water to generate hydrogen, and at least one metal selected from the group consisting of platinum group elements, copper, nickel and cobalt. Furthermore, the method for manufacturing hydrogen includes the above-described reducing step, and a water-decomposing step of reacting water with the medium that is reduced in the reducing step, to generate hydrogen.
摘要翻译：提供一种还原金属氧化物的方法和氢的制造方法，其使用包括诸如城市气体的烃的气体容易地还原分解水以产生氢的金属的氧化物。用于还原金属氧化物的方法包括使用包含烃的还原气体还原包含分解水以产生氢的金属氧化物的介质和选自铂族元素中的至少一种金属的步骤，铜，镍和钴。此外，制造氢的方法包括上述还原步骤和使水与在还原步骤中还原的介质反应产生氢的水分解步骤。

30. 发明申请

US20050255037A1 Method for producing hydrogen and apparatus for supplying hydrogen 审中-公开
标题翻译：用于生产氢的方法和用于供应氢的装置
公开(公告)号：US20050255037A1
公开(公告)日：2005-11-17
申请号：US10519080
申请日：2003-05-15
申请人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
发明人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
IPC分类号： B01J7/02 , B01J8/00 , B01J8/02 , C01B3/06 , C01B3/10
CPC分类号： B01J8/006 , B01J7/02 , B01J8/025 , B01J8/0285 , B01J2208/00212 , B01J2208/00495 , C01B3/06 , C01B3/061 , C01B3/10 , Y02E60/36
摘要： A method for producing hydrogen by contacting water, steam or gas containing steam with iron or iron oxide, wherein the iron or iron oxide is added with at least one metal of Rh, Ir, Ru, Pd, Pt and Os and at least one metal of Ti, Zr, V, Nb, Cr, Mo, Al, Ga, Mg, Sc, Ni and Cu. The method provides a medium for producing hydrogen which is capable of producing hydrogen at relatively low temperature and at a great generation rate, is free from the decrease of activity, and is resistance to repeated oxidation and reduction, which leads to the decomposition of water and production of hydrogen with good efficiency.
摘要翻译：通过使含有蒸汽的水，蒸气或含气体与铁或氧化铁接触而产生氢的方法，其中所述铁或氧化铁中加入至少一种Rh，Ir，Ru，Pd，Pt和Os的金属和至少一种金属的Ti，Zr，V，Nb，Cr，Mo，Al，Ga，Mg，Sc，Ni和Cu。该方法提供一种生产氢的介质，该介质能够在相对较低的温度和较高的发生速度下产生氢，不会降低活性，并且具有抗重复氧化和还原的能力，这导致水的分解和生产氢气效率高。

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