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21. 发明申请

US20080158740A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20080158740A1
公开(公告)日：2008-07-03
申请号：US12037726
申请日：2008-02-26
申请人： Masahiko NAKAYAMA , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko NAKAYAMA , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

22. 发明申请

US20070012972A1 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US20070012972A1
公开(公告)日：2007-01-18
申请号：US11389110
申请日：2006-03-27
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

23. 发明授权

US07875903B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07875903B2
公开(公告)日：2011-01-25
申请号：US12037726
申请日：2008-02-26
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

24. 发明授权

US07411263B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07411263B2
公开(公告)日：2008-08-12
申请号：US11389110
申请日：2006-03-27
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

25. 发明申请

US20100118600A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20100118600A1
公开(公告)日：2010-05-13
申请号：US12686168
申请日：2010-01-12
申请人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/16 , H01L41/22 , G06F1/18
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

26. 发明申请

US20090080239A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20090080239A1
公开(公告)日：2009-03-26
申请号：US12233121
申请日：2008-09-18
申请人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/02 , G11B5/706 , G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.
摘要翻译：磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

27. 发明授权

US08363462B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08363462B2
公开(公告)日：2013-01-29
申请号：US13233906
申请日：2011-09-15
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

28. 发明授权

US07663197B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07663197B2
公开(公告)日：2010-02-16
申请号：US11534440
申请日：2006-09-22
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0> = Mst是自由层的厚度，A是常数。

29. 发明授权

US08036025B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08036025B2
公开(公告)日：2011-10-11
申请号：US12686168
申请日：2010-01-12
申请人： Toshihiko Nagase , Masatoshi Yoshkawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshkawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L43/00
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

30. 发明申请

US20120008381A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20120008381A1
公开(公告)日：2012-01-12
申请号：US13233906
申请日：2011-09-15
申请人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15 , G06K19/077 , H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

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