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21. 发明专利

JP2010106119A Semiconductor nanoparticle phosphor 审中-公开
标题翻译： SEMICONDUCTOR NANOPARTICLE PHOSPHOR
公开(公告)号：JP2010106119A
公开(公告)日：2010-05-13
申请号：JP2008278316
申请日：2008-10-29
申请人： Sharp Corp , シャープ株式会社
发明人： SAITO HAJIME , RYORIN TATSUYA , KINOMOTO JUNICHI
IPC分类号： C09K11/08 , C09K11/56 , C09K11/58 , C09K11/64 , C09K11/70 , C09K11/74
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor nanoparticle phosphor excellent in controllability of emission wavelength and obtaining a desired luminescent color.
SOLUTION: The semiconductor nanoparticle phosphor includes two or more emitting regions independently presents different quantum effects and a barrier region and has a laminated structure in which the two or more emitting regions are isolated by the barrier region, wherein the two or more emitting regions have the same quantum level across the barrier region.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种发射波长的控制性优异的半导体纳米粒子荧光体，得到期望的发光颜色。解决方案：半导体纳米颗粒磷光体包括两个或更多个发射区域独立地呈现不同的量子效应和阻挡区域，并且具有其中两个或更多个发射区域被屏障区域隔离的层压结构，其中两个或更多个发射区域跨越屏障区域具有相同的量子水平。版权所有（C）2010，JPO＆INPIT

22. 发明专利

JP2009152115A Lighting system 有权
标题翻译：照明系统
公开(公告)号：JP2009152115A
公开(公告)日：2009-07-09
申请号：JP2007330260
申请日：2007-12-21
申请人： Sharp Corp , シャープ株式会社
发明人： RYORIN TATSUYA , SAITO HAJIME
IPC分类号： F21K2/06 , C09K11/08 , C09K11/62 , F21S10/00 , F21Y101/02
摘要： PROBLEM TO BE SOLVED: To provide a lighting system capable of emitting a light from a liquid stored in a vessel, using a simple structure, and of providing bright illumination. SOLUTION: This lighting system is provided with a fluorescent part having the liquid stored in the vessel and a phosphor dispersed in the liquid, and an excitation light source for exciting the phosphor in the fluorescent part. It is preferable that the phosphor in the lighting system be formed of fine particles of a semiconductor nanocrystal. It is preferable that the excitation light source in the lighting system have a light-emitting element by using a nitride-base group III-V compound semiconductor. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够使用简单的结构从提供容器中的液体中发出光的照明系统，并提供明亮的照明。解决方案：该照明系统设置有具有存储在容器中的液体和分散在液体中的荧光体的荧光部分和用于激发荧光部分中的荧光体的激发光源。优选的是，照明系统中的荧光体由半导体纳米晶体的细颗粒形成。优选的是，照明系统中的激发光源通过使用氮化物基III-V族化合物半导体而具有发光元件。版权所有（C）2009，JPO＆INPIT

23. 发明专利

JP2009120668A Color-developing structure 审中-公开
标题翻译：颜色发展结构
公开(公告)号：JP2009120668A
公开(公告)日：2009-06-04
申请号：JP2007294333
申请日：2007-11-13
申请人： Sharp Corp , シャープ株式会社
发明人： SAITO HAJIME
IPC分类号： C09K11/00 , B32B33/00 , C09K11/08
摘要： PROBLEM TO BE SOLVED: To provide a color-developing structure effective for suppressing discoloration and color fading and keeping high visibility and design over a long time.
SOLUTION: The color-developing structure is provided with a base material and a transparent matrix containing a coating material and phosphor nano-particles, wherein at least a part of the base material is coated with the matrix to form a color-developing region on the base material. The color-developing region includes a first color-developing region formed by a first transparent matrix containing the coating material and a second color-developing region formed by a second transparent matrix containing the phosphor nano-particles, the base material is coated with the first transparent matrix and the first transparent matrix is coated with the second transparent matrix to form the color-developing region.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效抑制变色和褪色以及长时间保持高可视性和设计的彩色显影结构。解决方案：显色结构设置有基材和含有涂料和荧光体纳米颗粒的透明基体，其中基材的至少一部分涂覆有基质以形成显色性区域在基材上。彩色显影区域包括由包含涂料的第一透明基质形成的第一显色区域和由含有荧光体纳米颗粒的第二透明基质形成的第二显色区域，该基材涂覆有第一显色区域透明基质和第一透明基质涂覆有第二透明基质以形成显色区域。版权所有（C）2009，JPO＆INPIT

24. 发明专利

JP2009030073A Phosphor, its manufacturing method and light-emitting device using the same 有权
标题翻译：磷光体，其制造方法和使用其的发光装置
公开(公告)号：JP2009030073A
公开(公告)日：2009-02-12
申请号：JP2008265458
申请日：2008-10-14
申请人： Sharp Corp , シャープ株式会社
发明人： SAITO HAJIME
IPC分类号： C09K11/62 , C01G15/00 , C09K11/08 , C09K11/64 , C30B29/38 , C30B29/62
摘要： PROBLEM TO BE SOLVED: To provide a nanoparticle phosphor obtained by using a nitride semiconductor material and excellent in light emission characteristics, to provide its manufacturing method which enables the production of the same at a high yield, and to provide the light-emitting device using the same.
SOLUTION: This phosphor is a phosphor consisting of columnar crystals having a diameter of 3 nm or less, wherein a light emitting region and a light absorbing region are specified in the columnar crystal, and the light emitting region and the light absorbing region are adjacent to a longitudinal direction of the columnar crystal, the light emitting region is placed between two light absorbing regions in the longitudinal direction of the phosphor, the light emitting wavelength presented by the light emitting region is longer than 430 nm, the wavelength of excited light of the phosphor is 200-450 nm, and the light absorbing region is formed of at least one of Al
x Ga
1-x N (0≤x≤1) and In
y Ga
1-y N (0≤y≤0.15).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供通过使用氮化物半导体材料获得的并且发光特性优异的纳米颗粒荧光体，以提供能够以高产率制造该方法，并且提供发光特性的制造方法，发光装置。解决方案：该荧光体是由直径为3nm以下的柱状晶体构成的荧光体，其中在柱状晶体中规定发光区域和光吸收区域，发光区域和光吸收区域与柱状晶体的纵向方向相邻，发光区域位于荧光体的纵向方向上的两个光吸收区域之间，由发光区域呈现的发光波长长于430nm，激发波长荧光体的光线为200〜450nm，光吸收区域由至少一个Al（SB）xS（1≤x≤1））形成，和（<0≤y≤0.15）。版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2007077245A Semiconductor phosphor particle and method for producing the same 有权
标题翻译：半导体磷光体颗粒及其制造方法
公开(公告)号：JP2007077245A
公开(公告)日：2007-03-29
申请号：JP2005265559
申请日：2005-09-13
申请人： Nara Women's Univ , Sharp Corp , シャープ株式会社 , 国立大学法人奈良女子大学
发明人： RYORIN TATSUYA , SAITO HAJIME , TANETANI MOTOTAKA , YUASA TAKAYUKI , HARADA MASAFUMI
IPC分类号： C09K11/08 , C01B21/06 , C09K11/62
摘要： PROBLEM TO BE SOLVED: To provide semiconductor phosphor particles having high effect in light emission and excellent in reliability by capping surface defects of crystalline particles, and a simple method for producing the same.
SOLUTION: The semiconductor phosphor particles are prepared by coating the crystalline particles including bonds between a 13th family element and a nitrogen atom with at least a modified organic compound including bonds between a nitrogen atom and a carbon atom. The method for producing the semiconductor phosphor particles comprises coating the crystalline particles including bonds between a 13th family element and a nitrogen atom with at least a modified organic compound including bonds between a nitrogen atom and a carbon atom and comprises a process for heating a synthetic solution prepared by mixing the compound of the 13th family element with the modified organic compound.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：通过封盖晶粒的表面缺陷，提供发光效果好，可靠性优异的半导体荧光体粒子及其制造方法。解决方案：通过将包含第13族元素和氮原子之间的键的结晶粒子与至少包含氮原子和碳原子之间的键的改性有机化合物进行涂布来制备半导体荧光体颗粒。制造半导体荧光体颗粒的方法包括将包含第13族元素和氮原子之间的键的结晶粒子与至少包含氮原子和碳原子之间的键的改性有机化合物进行包覆，并且包括加热合成溶液通过将第13族元素的化合物与改性有机化合物混合而制备。版权所有（C）2007，JPO＆INPIT

26. 发明专利

JP2006104411A Phosphor, its manufacturing method and light-emitting device using the same 审中-公开
标题翻译：磷光体，其制造方法和使用其的发光装置
公开(公告)号：JP2006104411A
公开(公告)日：2006-04-20
申请号：JP2004296444
申请日：2004-10-08
申请人： Sharp Corp , シャープ株式会社
发明人： SAITO HAJIME
IPC分类号： C09K11/62 , C09K11/08 , C09K11/64
CPC分类号： C09K11/0883 , C09K11/62 , C09K11/7743 , C09K11/7766 , C09K11/7783 , C30B23/00 , C30B23/002 , C30B29/403 , C30B29/60 , Y10S977/762 , Y10S977/816 , Y10S977/848 , Y10T428/29
摘要： PROBLEM TO BE SOLVED: To provide a nanoparticle phosphor obtained by using a nitride semiconductor material and excellent in light emission characteristics, to provide its manufacturing method which enables the production of the same at a high yield, and to provide the light-emitting device using the same. SOLUTION: The phosphor of the present invention is a phosphor 1 consisting of columnar crystals having a diameter of ≤3 nm, wherein a light emitting region 3 and a light absorbing region 2 are specified in the columnar crystal, and the light emitting region and the light absorbing region are adjacent to a longitudinal direction of the columnar crystal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供通过使用氮化物半导体材料获得的并且发光特性优异的纳米颗粒荧光体，以提供能够以高产率制造其的制造方法，并且提供发光特性，发光装置。解决方案：本发明的荧光体是由直径≤3nm的柱状晶体构成的荧光体1，其中在柱状晶体中规定发光区域3和光吸收区域2，发光区域和光吸收区域与柱状晶体的纵向方向相邻。版权所有（C）2006，JPO＆NCIPI

27. 发明专利

JP2005050993A Oxide semiconductor laser element 审中-公开
标题翻译：氧化物半导体激光元件
公开(公告)号：JP2005050993A
公开(公告)日：2005-02-24
申请号：JP2003280700
申请日：2003-07-28
申请人： Sharp Corp , シャープ株式会社
发明人： SAITO HAJIME
IPC分类号： H01S5/327 , H01S5/065
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor laser element ensuring lower noise and higher reliability. SOLUTION: The semiconductor laser element comprises a quantum well active layer 105 formed of a ZnO barrier layer and a Cd 0.1 Zn 0.9 O well layer and a saturated absorption layer 108 of p-type In 0.25 Ga 0.75 N formed independently to such quantum well active layer 105 for the purpose of self-oscillation. Accordingly, noise and power consumption can be lowered. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供确保更低噪声和更高可靠性的氧化物半导体激光元件。解决方案：半导体激光器元件包括由ZnO阻挡层和CdSb0.1 / Sb> Zn <0.9> 0.9 O阱层形成的量子阱有源层105和饱和吸收层为了自振荡，独立地形成与这种量子阱活性层105形成的p型In 0.25

28. 发明专利

JP2004349301A Light emitting diode element electrode and light emitting diode element 审中-公开
公开(公告)号：JP2004349301A
公开(公告)日：2004-12-09
申请号：JP2003141772
申请日：2003-05-20
申请人： Sharp Corp , シャープ株式会社
发明人： SAITO HAJIME
IPC分类号： H01L33/28 , H01L33/32 , H01L33/42 , H01L33/56 , H01L33/62 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an electrode for light emitting diode element that can improve the light emitting efficiency of a light emitting diode element without impairing the simplicity and adhesive characteristic of bonding, and to provide a light emitting diode element.
SOLUTION: The p-type electrode 6 possessed by an InGaN light emitting diode element 10 has an Ag intermediate layer 6b which reflects incident light between an Ni light-transmissive ohmic electrode layer 6a and an Au-pad electrode layer 6c. Since the InGaN light emitting diode element 10 provided with the p-type electrode 6 can emit the incident light to the outside without absorbing the light, the light emitting efficiency of the element 10 can be improved by leaps and bounds without impairing the ohmic characteristics or reliability of the p-type electrode 6.
COPYRIGHT: (C)2005,JPO&NCIPI

29. 发明专利

JP2004341128A Light emitting body, illuminator including the same, and display 审中-公开
公开(公告)号：JP2004341128A
公开(公告)日：2004-12-02
申请号：JP2003136123
申请日：2003-05-14
申请人： Sharp Corp , シャープ株式会社
发明人： MORIOKA TATSUYA , SAITO HAJIME
IPC分类号： G02B6/00 , F21S2/00 , F21S8/00 , F21V8/00 , F21Y101/02 , G02F1/13357 , H01L33/50 , H01S5/022 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a fiber-shaped light emitting body in which the uniformity of light emitting intensity is kept even when the length is varied.
SOLUTION: The light emitting body is characterized in that the light emitting body includes a light emitting element (100) and a fiber-shaped light guide body, the light emitting element is optically connected to the one end face of the fiber-shaped light guide body, an optical film (104) which reflects the light propagating in the light guide body is formed at the other end face of the fiber-shaped light guide body, the fiber-shaped light guide body includes a core (101) which guides light and a clad (103) covering the core, a light scattering part (102) which partially scatters the guided light is formed in at least a part of region, and the length L (cm) of the light scattering part and the scattering coefficient s (1/cm) satisfy the relation L≤1/s.
COPYRIGHT: (C)2005,JPO&NCIPI

30. 发明专利

JP2004335792A Oxide semiconductor light emitting device 有权
公开(公告)号：JP2004335792A
公开(公告)日：2004-11-25
申请号：JP2003130552
申请日：2003-05-08
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/42 , H01L33/52 , H01L33/62 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device that is superior in light emitting characteristics and power saving. SOLUTION: A quantum well light emitting layer 103 is formed by laminating alternately an Mg 0.1 Zn 0.9 O barrier layer and a Cd 0.1 Zn 0.9 O well layer. Thus, the confinement effect of the Cd 0.1 Zn 0.9 O well layer is improved and the light emitting characteristic and power saving can be made high. COPYRIGHT: (C)2005,JPO&NCIPI

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