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21. 发明授权

US07397254B1 Methods for imperfect insulating film electrical thickness/capacitance measurement 失效
标题翻译：绝缘膜电气厚度/电容测量不完美的方法
公开(公告)号：US07397254B1
公开(公告)日：2008-07-08
申请号：US11277053
申请日：2006-03-21
申请人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Quoc-Bao Vu , Thomas G. Miller , Gregory S. Horner
发明人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Quoc-Bao Vu , Thomas G. Miller , Gregory S. Horner
IPC分类号： G01R31/302
CPC分类号： G01R31/2648 , G01R27/26 , G01R31/312
摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.
摘要翻译：提供了确定绝缘膜的电参数的方法。一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。另一种方法包括在绝缘膜上施加电场。由电场引起的绝缘膜上的泄漏可忽略不计。该方法还包括测量样品的表面电位并确定衬底的电位。此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。该方法还包括从纯电压确定电参数。电气参数可以是绝缘膜的电容或电气厚度。

22. 发明授权

US07064565B1 Methods and systems for determining an electrical property of an insulating film 失效
标题翻译：用于确定绝缘膜的电性能的方法和系统
公开(公告)号：US07064565B1
公开(公告)日：2006-06-20
申请号：US10699352
申请日：2003-10-31
申请人： Zhiwei Xu , Thomas G. Miller , Jianou Shi , Gregory S. Horner
发明人： Zhiwei Xu , Thomas G. Miller , Jianou Shi , Gregory S. Horner
IPC分类号： G01R31/302 , G01R31/26
CPC分类号： G01R31/129 , G01R31/2831
摘要： Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.
摘要翻译：提供了确定绝缘膜的表面电压的方法。一种方法包括在绝缘膜的上表面上沉积电荷并在沉积期间测量到晶片的电流。该方法还包括从电流确定绝缘膜的表面电压。以这种方式，不测量表面电压，而是根据测量的电流确定。另一个实施例可以包括在电荷的高电流模式沉积期间测量到晶片的第二电流，并从第二电流确定膜的第二表面电压。可以重复该方法直到测量Q-V扫描。附加实施例可以包括在沉积电荷期间改变控制电压，使得到晶片的电流随时间基本上是恒定的，并且确定绝缘膜的电荷对电压数据。

23. 发明授权

US06448804B2 Contactless total charge measurement with corona 有权
标题翻译：非接触式电荷测量
公开(公告)号：US06448804B2
公开(公告)日：2002-09-10
申请号：US09964944
申请日：2001-09-27
申请人： Tom G. Miller , Roger L. Verkuil , Gregory S. Horner
发明人： Tom G. Miller , Roger L. Verkuil , Gregory S. Horner
IPC分类号： G01R3126
CPC分类号： G01R29/24 , G01R31/2656 , G01R31/2831
摘要： A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer, and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.
摘要翻译：测量半导体衬底上的绝缘层的总电荷的方法包括对绝缘层施加电晕电荷，以及在施加每个电晕电荷之后测量绝缘层的表面光电压。用库仑计测量每个电晕电荷的电荷密度。确定获得预定固定值的表面光电压所需的总电晕电荷，并用于计算绝缘层的总电荷。固定值对应于平带或中频带条件。

24. 发明授权

US06202029B1 Non-contact electrical conduction measurement for insulating films 有权
标题翻译：绝缘膜非接触导电测量
公开(公告)号：US06202029B1
公开(公告)日：2001-03-13
申请号：US09597503
申请日：2000-06-20
申请人： Roger L. Verkuil , Gregory S. Horner , Tom G. Miller
发明人： Roger L. Verkuil , Gregory S. Horner , Tom G. Miller
IPC分类号： G01R3126
CPC分类号： G01R31/2648
摘要： A corona source is used to apply charge to an insulating layer. The resulting voltage over time is used to determine the current through the layer. The resulting data determines a current-voltage characteristic for the layer and may be used to determine the tunneling field for the layer.
摘要翻译：使用电晕源将电荷施加到绝缘层。随着时间的推移产生的电压用于确定通过该层的电流。所得数据确定该层的电流 - 电压特性，并可用于确定该层的隧道场。

25. 发明授权

US5594247A Apparatus and method for depositing charge on a semiconductor wafer 失效
标题翻译：用于在半导体晶片上沉积电荷的装置和方法
公开(公告)号：US5594247A
公开(公告)日：1997-01-14
申请号：US499326
申请日：1995-07-07
申请人： Roger L. Verkuil , Gregory S. Horner , Thomas G. Miller
发明人： Roger L. Verkuil , Gregory S. Horner , Thomas G. Miller
IPC分类号： H01L21/66 , H01T19/04
CPC分类号： H01L22/14 , H01L22/20
摘要： A conductive screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by first applying a surplus of one charge to the wafer and then depositing an opposite polarity charge until the potential of the wafer equals the potential of the screen.
摘要翻译：将导电屏放置在电晕枪和半导体晶片的表面之间。通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。卡盘将晶片定位在靠近屏幕的位置。通过首先向晶片施加剩余的一次电荷，然后沉积相反极性的电荷，直到晶片的电位等于屏幕的电位，将期望的电荷施加到晶片。

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