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    • 21. 发明专利
    • Piezoelectric detecting element
    • 压电检测元件
    • JPH11271351A
    • 1999-10-08
    • JP7027398
    • 1998-03-19
    • Mitsubishi Electric Corp三菱電機株式会社
    • UMEMURA TOSHIOYAMADA AKIRAMAEDA CHISAKOSATO TAKEHIKOUCHIKAWA HIDEFUSA
    • G01L1/16G01P15/09G01R33/038
    • PROBLEM TO BE SOLVED: To enable the highly sensitive measurement of physical quantity, by fixing a metal film so as to cover an opening part provided at the center part of a substrate, providing an acting body and a piezoelectric film for the metal film, and directly deforming the metal film. SOLUTION: A metal film 2 is formed so as to cover an opening part 100 provided at the center part of a substrate 1, and a cylindrical acting body 6 to deform the metal film 2 in response to acceleration impressed on a piezoelectric film (piezoelectric element) 3 is provided on the lower surface of the metal film 2. As the metal film 2 is deformed by an extremely small force in response to an impressed force in this constitution, there is no need for enlarging the acting body 6. and it is possible to form a compact and highly sensitive piezoelectric detecting element. In addition, the electrode 4 of the piezoelectric element and a pad electrode 7 for connection to a control circuit provided outside the opening part 100 are connected by the air bridge wiring of wiring metal 5, and nothing except the piezoelectric film 3 is formed at the movable part of the metal film 2. Therefore, nothing prevents the deformation of the metal film 2 at the time of impression of an external force, and it is possible to detect an external force effectively and accurately.
    • 要解决的问题为了实现物理量的高灵敏度测量,通过固定金属膜以覆盖设置在基板的中心部分的开口部分,为金属膜提供作用体和压电膜,以及 直接使金属膜变形。 解决方案:金属膜2形成为覆盖设置在基板1的中心部分的开口部分100,并且圆柱形作用体6响应于施加在压电膜(压电元件)上的加速度而使金属膜2变形 )3设置在金属膜2的下表面上。由于在该构造中金属膜2响应于施加的力而以非常小的力而变形,因此不需要放大作用体6.它是 可能形成紧凑且高灵敏度的压电检测元件。 此外,压电元件的电极4和用于连接到设置在开口部分100外部的控制电路的焊盘电极7通过布线金属5的空气桥接线连接,除了压电膜3之外没有形成 因此,没有什么可以防止在外力压缩时金属膜2的变形,能够有效且准确地检测外力。
    • 27. 发明专利
    • Piezoelectric thin-film element and manufacturing method thereof
    • 压电薄膜元件及其制造方法
    • JP2003347883A
    • 2003-12-05
    • JP2002152870
    • 2002-05-27
    • Mitsubishi Electric Corp三菱電機株式会社
    • YAMADA AKIRAMAEDA CHISAKONOZAKI AYUMIMIYASHITA SHOJIYAMASHITA HIDE
    • H03H9/17H03H3/04H03H9/02H03H9/58
    • PROBLEM TO BE SOLVED: To provide a piezoelectric thin-film element which has superior dimensional accuracy of a frequency adjusting film, has less variations in production lots or fluctuation in a wafer substrate, and can execute frequency adjustment which is inexpensive and superior in mass productivity, and to provide a manufacturing method thereof.
      SOLUTION: The piezoelectric thin-film element comprises a lower electrode film 4, a piezoelectric film 5, and a plurality of upper electrode films 6a, 6b and the like. A frequency adjusting film 11 made of a metal oxide, such as a silicon oxide or aluminum oxide or a composite resin, such as an acryl-based resin, is formed with a predetermined area and film thickness on one film 6b. In a second piezoelectric resonance section to which the film 11 is added, a resonance frequency shifts to a slightly low direction.
      COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了提供一种具有优异的频率调节膜的尺寸精度的压电薄膜元件,其制造批次的变化或晶片基板的波动变小,并且可以执行便宜且优越的频率调节 并且提供其制造方法。 解决方案:压电薄膜元件包括下电极膜4,压电膜5和多个上电极膜6a,6b等。 在一个膜6b上形成具有预定面积和膜厚度的诸如氧化硅或氧化铝的金属氧化物的频率调节膜11或诸如丙烯酸类树脂的复合树脂。 在添加有膜11的第二压电共振部中,共振频率向稍微低的方向移动。 版权所有(C)2004,JPO