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21. 发明申请

US20090009278A1 INDUCTOR 有权
标题翻译：电感器
公开(公告)号：US20090009278A1
公开(公告)日：2009-01-08
申请号：US11969307
申请日：2008-01-04
申请人： Chih-Huang Lai , Ruo-Fan Jiang , Nazmun Nahar Shams , Chao-Chien Chiang
发明人： Chih-Huang Lai , Ruo-Fan Jiang , Nazmun Nahar Shams , Chao-Chien Chiang
IPC分类号： H01F27/30 , H01F27/28 , H01F5/00
CPC分类号： H01F17/0006 , B82Y25/00 , H01F3/10 , H01F10/3218 , H01F17/04 , H01F41/046 , H01F2017/0066
摘要： An inductor includes: a substrate; an insulator layer; a conductive coil; and a permeability-enhancing film of a multi-layer structure. The multi-layer structure includes at least one repeating unit that has at least two layers. The two layers exhibit an exchange-coupling effect and include a first ferromagnetic layer of a first ferromagnetic material and an exchange-coupling layer.
摘要翻译：电感器包括：基板; 绝缘体层; 导电线圈; 以及多层结构的渗透性增强膜。多层结构包括至少一个具有至少两层的重复单元。两层表现出交换耦合效应，并且包括第一铁磁材料的第一铁磁层和交换耦合层。

22. 发明申请

US20070166839A1 METHOD FOR FABRICATING MAGNETORESISTANCE MULTI-LAYER 审中-公开
标题翻译：用于制造磁性多层的方法
公开(公告)号：US20070166839A1
公开(公告)日：2007-07-19
申请号：US11308831
申请日：2006-05-12
申请人： Chih-Huang Lai , Sheng-Huang Huang , Cheng-Han Yang , Yung-Hung Wang , Wei-Chuan Chen , Kuei-Hung Shen
发明人： Chih-Huang Lai , Sheng-Huang Huang , Cheng-Han Yang , Yung-Hung Wang , Wei-Chuan Chen , Kuei-Hung Shen
IPC分类号： H01L21/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3903 , H01F10/3268 , H01F41/308 , H01L43/12
摘要： A fabrication method of a magnetoresistance multi-layer is provided. The method includes forming a multi-layer with at least an antiferromagnetic layer and performing an ion irradiation process to the multi-layer to transform a disordered structure of the antiferromagnetic layer to an ordered structure. Accordingly, the process time can be reduced and the interdiffusion in the multi-layer can be prevented.
摘要翻译：提供了一种磁阻多层的制造方法。该方法包括形成至少具有反铁磁性层的多层，并对多层进行离子辐射处理，以将反铁磁性层的无序结构转换为有序结构。因此，可以减少处理时间，并且可以防止多层中的相互扩散。

23. 发明申请

US20060238925A1 Magnetoresistive Structures and Fabrication Methods 有权
标题翻译：磁阻结构及制作方法
公开(公告)号：US20060238925A1
公开(公告)日：2006-10-26
申请号：US10907974
申请日：2005-04-22
申请人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
发明人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3929 , B82Y10/00 , G11B2005/3996
摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.
摘要翻译：这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

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