专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20110163118A1 Metered Dispenser 审中-公开
标题翻译：计量分配器
公开(公告)号：US20110163118A1
公开(公告)日：2011-07-07
申请号：US12985619
申请日：2011-01-06
申请人： Christopher Gieda , David Honan , Nathan Rollins , Shane Yellin , Andrew Simon
发明人： Christopher Gieda , David Honan , Nathan Rollins , Shane Yellin , Andrew Simon
IPC分类号： G01F11/26
CPC分类号： G01F11/24
摘要： A dispensing apparatus includes a container having an opening, and a doser coupled with the container about the container opening. The doser includes a housing forming a chamber with an interior wall, an inlet, and an outlet. The inlet is diametrically offset from the outlet, and substantially aligned with the opening of the container. The doser also includes a covering member to alternatively cover and open the inlet and the outlet. The covering member is movable about a range of positions to substantially completely cover at least one of the inlet and outlet at all positions in the range. The covering member covers no more than a portion of the chamber interior wall when the covering member completely opens the outlet.
摘要翻译：分配装置包括具有开口的容器和与容器围绕容器开口连接的加料器。加料器包括形成具有内壁，入口和出口的室的壳体。入口与出口直径偏离，并与容器的开口基本对齐。加料器还包括覆盖构件以备选地覆盖和打开入口和出口。覆盖部件可在一定范围的位置上移动，以在该范围内的所有位置基本上完全覆盖入口和出口中的至少一个。当覆盖构件完全打开出口时，覆盖构件覆盖室内壁的不超过一部分。

22. 发明申请

US20080026566A1 DUAL DAMASCENE INTERCONNECT STRUCTURES HAVING DIFFERENT MATERIALS FOR LINE AND VIA CONDUCTORS 有权
标题翻译：具有不同材料的双线性互连结构用于线路和通道导体
公开(公告)号：US20080026566A1
公开(公告)日：2008-01-31
申请号：US11847657
申请日：2007-08-30
申请人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

23. 发明授权

US07037834B2 Constant emissivity deposition member 失效
标题翻译：恒辐射率沉积元件
公开(公告)号：US07037834B2
公开(公告)日：2006-05-02
申请号：US10851384
申请日：2004-05-22
申请人： Fenton Read McFeely , John Jacob Yurkas , Sandra Malhotra , Andrew Simon
发明人： Fenton Read McFeely , John Jacob Yurkas , Sandra Malhotra , Andrew Simon
IPC分类号： H01L21/44
CPC分类号： C23C16/4404 , C30B35/00 , H01L21/28556
摘要： A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.
摘要翻译：适于在沉积过程中排出沉积材料的沉积构件可以在沉积期间获得涂层。在任何涂层沉积之前，沉积构件选择这种初始发射率值，沉积构件的发射率在沉积过程中保持基本不变。在代表性的实施例中，沉积构件涂覆有适当的薄层以实现所选择的发射率值。

24. 发明申请

US20050245068A1 Dual damascene interconnect structures having different materials for line and via conductors 失效
标题翻译：双镶嵌互连结构具有不同的材料用于线路和通孔导体
公开(公告)号：US20050245068A1
公开(公告)日：2005-11-03
申请号：US11174985
申请日：2005-07-05
申请人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney , Anthony Stamper , William Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

25. 发明申请

US20050221000A1 Method of forming a metal layer 审中-公开
标题翻译：形成金属层的方法
公开(公告)号：US20050221000A1
公开(公告)日：2005-10-06
申请号：US10813680
申请日：2004-03-31
申请人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/02 , C23C16/16 , C23C16/509 , B05D3/00 , C23C16/00 , H05H1/24
CPC分类号： C23C16/5096 , C23C16/02 , C23C16/16
摘要： A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.
摘要翻译：提供了一种用于在衬底上形成具有改善的形态的金属层的方法和加工工具。该方法包括通过将衬底暴露于等离子体中的激发物质来预处理衬底，将预处理的衬底暴露于含有羰基金属前体的工艺气体中，以及在预处理的衬底表面上形成金属层化学气相沉积工艺。金属羰基前体可以含有W（CO）6，Ni（CO）4，Mo（CO）6，CO， 2（CO）8，Rh 4（CO）12，Re 2（CO） Cr（CO）6或Ru 3（CO）12 12或其任何组合，和金属层可以分别含有W，Ni，Mo，Co，Rh，Re，Cr或Ru，或其任何组合。

26. 发明授权

US06465376B2 Method and structure for improving electromigration of chip interconnects 失效
标题翻译：改善芯片互连电迁移的方法和结构
公开(公告)号：US06465376B2
公开(公告)日：2002-10-15
申请号：US09377337
申请日：1999-08-18
申请人： Cyprian Emeka Uzoh , Daniel C. Edelstein , Andrew Simon
发明人： Cyprian Emeka Uzoh , Daniel C. Edelstein , Andrew Simon
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/76883 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , Y10S977/891 , H01L2924/00
摘要： A microstructure comprises a conductive layer of aluminum, copper or alloys thereof on a substrate wherein the layer comprises metal grains at least about 0.1 microns and barrier material deposited in the grainboundaries of the surface of the metal is provided along with a method for its fabrication.
摘要翻译：微结构包括在基底上的铝，铜或其合金的导电层，其中该层包含至少约0.1微米的金属颗粒，以及沉积在金属表面的晶界中的阻挡材料及其制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式