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21. 发明申请

WO2010020072A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER 审中-公开
标题翻译：具有硅保护层的半导体发光器件
公开(公告)号：WO2010020072A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001496
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.
摘要翻译：本发明的一个实施例提供一种半导体发光器件，其包括：衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层，多量子阱（MQW ）有源层，位于第一和第二掺杂半导体层之间。该器件还包括耦合到第一掺杂半导体层的第一电极，耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层的侧壁的有机硅保护层，MQW有源层，以及未被第二电极覆盖的第二掺杂半导体层的水平表面的一部分。

22. 发明申请

WO2009117850A1 METHOD FOR FABRICATING HIGHLY REFLECTIVE OHMIC CONTACT IN LIGHT-EMITTING DEVICES 审中-公开
标题翻译：在发光装置中制造高反射OHMIC接触的方法
公开(公告)号：WO2009117850A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000598
申请日：2008-03-26
申请人： LATTICE POWER (JIANGXI) CORPORATION , TANG, Yingwen , WANG, Li , JIANG, Fengyi
发明人： TANG, Yingwen , WANG, Li , JIANG, Fengyi
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.
摘要翻译：一种在发光器件中制造高反射电极的方法。在制造过程中，在生长衬底上制造多层半导体结构，其中多层半导体结构包括第一掺杂半导体层，第二掺杂半导体层和/或多量子阱（MQW）有源层。该方法还包括以下操作：在第一掺杂半导体层上形成接触辅助金属层，退火多层结构以激活第一掺杂半导体层，去除接触辅助金属层，形成反射欧姆接触金属层在所述第一掺杂半导体层上形成与所述反射欧姆接触金属层耦合的接合层，将所述多层结构接合到导电基板，去除所述生长衬底，形成耦合到所述导电衬底的第一电极，以及形成第二电极在第二掺杂半导体层上。

23. 发明申请

WO2009117848A1 METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES 审中-公开
标题翻译：用于制造稳定的发光二极管的方法
公开(公告)号：WO2009117848A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000596
申请日：2008-03-26
申请人： LATTICE POWER (JIANGXI) CORPORATION , WANG, Li , JIANG, Fengyi
发明人： WANG, Li , JIANG, Fengyi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.
摘要翻译：一种制造发光二极管（LED）的方法。该方法包括在导电基板上制造基于InGaAlN的多层LED结构。该方法还包括通过多层LED结构的有源区蚀刻预定图案的凹槽。凹槽将发光区域与非发光区域分开。此外，该方法包括在发光和非发光区域上沉积电极材料，从而形成电极。此外，该方法包括沉积覆盖发光和非发光区域的钝化层。此外，该方法包括去除电极上的钝化层，以使被电极材料和钝化层覆盖的非发光区域比发光区域和电极高，从而保护发光区域，发射区域与测试设备接触。

24. 发明申请

WO2009117847A1 METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS 审中-公开
标题翻译：用于制造大功率发光二极管阵列的方法
公开(公告)号：WO2009117847A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000583
申请日：2008-03-25
申请人： LATTICE POWER (JIANGXI) CORPORATION , WANG, Li , JIANG, Fengyi , TANG, Yingwen , LIU, Junlin
发明人： WANG, Li , JIANG, Fengyi , TANG, Yingwen , LIU, Junlin
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/44
摘要： A method for fabricating a high-power light-emitting diode (LED).The method includes etching grooves on a growth substrate. Thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride(InGaAlN)-based LED multilayer structures on the mesas on the growth substrate.Wherein a respective mesa supports a separate LED structures. In additions, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.
摘要翻译：一种用于制造大功率发光二极管（LED）的方法。该方法包括在生长衬底上蚀刻凹槽。从而在生长衬底上形成台面。该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构。其中相应的台面支撑单独的LED结构。此外，该方法包括将多层结构粘合到导电基底上。该方法还包括去除生长底物。此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

25. 发明申请

WO2009117845A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION 审中-公开
标题翻译：具有双面钝化的半导体发光器件
公开(公告)号：WO2009117845A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/000581
申请日：2008-03-25
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/00 , H01L23/488 , H01L27/15
CPC分类号： H01L33/44 , H01L21/6835 , H01L33/0079 , H01L33/405 , H01L2221/6835 , H01L2221/68359
摘要： A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and covers part of the horizontal surface of the second doped layer.
摘要翻译：发光器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂层上方的第二掺杂半导体层和位于第一和第二掺杂层之间的多量子阱（MQW）有源层掺杂层。该器件还包括耦合到第一掺杂层的第一电极和位于第一电极和第一掺杂层之间的除欧姆接触区域之外的区域中的第一钝化层。第一钝化层使第一电极与第一掺杂层的边缘基本绝缘，从而减少表面复合。该器件还包括耦合到第二掺杂层的第二电极和基本上覆盖第一和第二掺杂层的侧壁的第二钝化层，即MQW有源层，并且覆盖第二掺杂层的水平表面的一部分。

26. 发明申请

WO2007036164A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MAKING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：WO2007036164A1
公开(公告)日：2007-04-05
申请号：PCT/CN2006/002584
申请日：2006-09-29
申请人： LATTICE POWER (JIANYXI) CORPORATION , JIANG, Fengyi , WANG, Li , FANG, Wenqing
发明人： JIANG, Fengyi , WANG, Li , FANG, Wenqing
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/38 , H01L2933/0016
摘要： One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
摘要翻译：本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上包层和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部覆盖层的导电路径的下欧姆接触层。较低的欧姆接触层具有与上欧姆接触层的形状基本不同的形状，从而当施加电压时使载流子偏离远离上欧姆接触层的有源层的一部分到上部和下部欧姆接触层。

27. 发明公开

EP2257997A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION 审中-公开
标题翻译：用双面钝化半导体照明安排
公开(公告)号：EP2257997A1
公开(公告)日：2010-12-08
申请号：EP08715033.0
申请日：2008-03-25
申请人： Lattice Power (Jiangxi) Corporation
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/00 , H01L23/488 , H01L27/15
CPC分类号： H01L33/44 , H01L21/6835 , H01L33/0079 , H01L33/405 , H01L2221/6835 , H01L2221/68359
摘要： A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and covers part of the horizontal surface of the second doped layer.

28. 发明公开

EP2140504A1 METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATE 有权
标题翻译：对于高的质量控制有关的一种方法有红利衬底制造半导体器件时
公开(公告)号：EP2140504A1
公开(公告)日：2010-01-06
申请号：EP08748460.6
申请日：2008-05-06
申请人： Lattice Power (Jiangxi) Corporation
发明人： WANG, Li , JIANG, Fengyi
IPC分类号： H01L33/00 , H01L21/301
CPC分类号： H01L33/007 , H01S5/32341 , H01S5/327
摘要： A process for obtaining high-quality boundaries for individual multilayer structures (114) which are fabricated on a trench-partitioned substrate is provided. The process comprises following steps: preparing a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms(108),which are separated by arrays of trenches(102); forming a multilayer structure(114), which comprises a first doped layer(204), an active layer(206), and a second doped layer(208), on one of the deposition platforms(108); removing sidewalls of the multilayer structures (114).A semiconductor device with high-quality boundaries obtained by removing sidewalls of the multilayer structures (114) is also provided.

29. 发明公开

EP1929545A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MAKING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：EP1929545A1
公开(公告)日：2008-06-11
申请号：EP06791170.1
申请日：2006-09-29
申请人： Lattice Power (Jiangxi) Corporation
发明人： JIANG, Fengyi , WANG, Li , FANG, Wenqing
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/38 , H01L2933/0016
摘要： One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
摘要翻译：本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上包层和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部覆盖层的导电路径的下欧姆接触层。较低的欧姆接触层具有与上欧姆接触层的形状基本不同的形状，从而当施加电压时使载流子偏离远离上欧姆接触层的有源层的一部分到上部和下部欧姆接触层。

30. 发明公开

EP2316138A1 METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION 审中-公开
标题翻译：方法用于生产具有双面钝化的半导体感光元
公开(公告)号：EP2316138A1
公开(公告)日：2011-05-04
申请号：EP08783658.1
申请日：2008-08-19
申请人： Lattice Power (Jiangxi) Corporation
发明人： JIANG, Fengyi , WANG, Li
IPC分类号： H01L33/12
CPC分类号： H01L33/0079 , H01L33/44
摘要： A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.

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