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21. 发明申请

US20080090352A1 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080090352A1
公开(公告)日：2008-04-17
申请号：US11653362
申请日：2007-01-16
申请人： Sang-Kyoung Lee , Jin-Hong Kim , Dong-Hwan Kim , Won-Sik Shin , Woong Lee
发明人： Sang-Kyoung Lee , Jin-Hong Kim , Dong-Hwan Kim , Won-Sik Shin , Woong Lee
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/4925
摘要： A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the semiconductor substrate, forming a first preliminary polysilicon layer in communication with the tunneling insulation layer and the device isolation regions, forming a preliminary amorphous silicon layer on the first preliminary silicon layer, forming a second preliminary polysilicon layer on the preliminary amorphous silicon layer, and patterning the second preliminary polysilicon layer, the preliminary amorphous silicon layer, and the first preliminary polysilicon layer to form a floating gate layer.
摘要翻译：一种制造非易失性存储器件的方法包括在半导体衬底中形成多个器件隔离区域，在半导体衬底上形成隧道绝缘层，形成与隧道绝缘层和器件隔离区域连通的第一初步多晶硅层，在所述第一初步硅层上形成初步非晶硅层，在所述初步非晶硅层上形成第二初步多晶硅层，以及构图所述第二初步多晶硅层，所述初步非晶硅层和所述第一初步多晶硅层，以形成浮门层

22. 发明授权

US07342286B2 Electrical node of transistor and method of forming the same 失效
标题翻译：晶体管节点及其形成方法
公开(公告)号：US07342286B2
公开(公告)日：2008-03-11
申请号：US11319724
申请日：2005-12-29
申请人： Seung-Mok Shin , Jin-Hong Kim , Soo-Woong Lee
发明人： Seung-Mok Shin , Jin-Hong Kim , Soo-Woong Lee
IPC分类号： H01L29/94 , H01L21/4763
CPC分类号： H01L21/76802 , H01L21/76831 , H01L27/115 , H01L27/11521 , H01L29/7881
摘要： According to example embodiments of the present invention, there are provided an electrical node of a transistor and a method of forming the same, which may reduce or minimize current leakage between the electrical node and a semiconductor substrate when a buried contact hole exposing at least the side of an active region is arranged on the semiconductor substrate. Two gate patterns may be formed on the active region of the semiconductor substrate. Conductive layer patterns may be formed in the gate patterns and in the semiconductor substrate between the gate patterns. A buried interlayer insulating layer may be formed on the semiconductor substrate to cover the gate patterns. A buried contact hole which passes through the buried interlayer insulating layer and exposes the conductive layer pattern of the semiconductor substrate may be formed. The buried contact hole may be formed to expose at least the side of the active region. An impurity region may be formed in the semiconductor substrate below the buried contact hole. A contact hole spacer covering the sidewall of the buried contact hole may be formed. A buried conductive layer which covers the contact hole spacer and fills the buried contact hole may be formed.
摘要翻译：根据本发明的示例性实施例，提供了一种晶体管的电节点及其形成方法，其可以减少或最小化电节点和半导体衬底之间的电流泄漏，当埋入式接触孔至少暴露于有源区的一侧设置在半导体衬底上。可以在半导体衬底的有源区上形成两个栅极图案。可以在栅极图案和栅极图案之间的半导体衬底中形成导电层图案。掩埋层间绝缘层可以形成在半导体衬底上以覆盖栅极图案。可以形成通过掩埋层间绝缘层并暴露半导体衬底的导电层图案的掩埋接触孔。埋入的接触孔可以形成为暴露至少有源区域的一侧。可以在掩埋接触孔下方的半导体衬底中形成杂质区域。可以形成覆盖埋入接触孔的侧壁的接触孔间隔物。可以形成覆盖接触孔间隔物并填充埋入接触孔的掩埋导电层。

23. 发明申请

US20060281290A1 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US20060281290A1
公开(公告)日：2006-12-14
申请号：US11446151
申请日：2006-06-05
申请人： Jong-Seon Ahn , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Eun-Kuk Chung , Hyung-Mo Yang , Chang-Yeon Yoo , Yun-Seung Kang , Kyung-Tae Jang
发明人： Jong-Seon Ahn , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Eun-Kuk Chung , Hyung-Mo Yang , Chang-Yeon Yoo , Yun-Seung Kang , Kyung-Tae Jang
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L23/53271 , H01L21/76802 , H01L21/76816 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.

24. 发明授权

US06141297A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US06141297A
公开(公告)日：2000-10-31
申请号：US263882
申请日：1999-03-08
申请人： Jin-Hong Kim
发明人： Jin-Hong Kim
IPC分类号： G11B11/105 , G11B11/00
CPC分类号： G11B11/10593 , G11B11/10584 , G11B11/10591
摘要： Magneto-optical recording medium having a reproduction layer of multilayer wherein a multilayer of magnetic/non-magnetic layers is used as the reproduction layer or a recording layer in MSR or MAMMOS magneto-optical disk and thicknesses of layers in the multilayer are adjusted or a noble metal intermediate layer is introduced between the reproduction layer and the recording layer for improving a signal quality with an improvement of a resolution, thereby allowing application, not only to a red region with long wavelengths, but also to a blue region with short wavelengths, permitting a wide use and suitable for a high density disk.
摘要翻译：使用多层磁性/非磁性层作为再现层或MSR或MAMMOS磁光盘中的记录层和多层中的层的厚度的多层复制层的磁光记录介质进行调整贵金属中间层被引入到再现层和记录层之间，以提高分辨率来提高信号质量，从而不仅可以应用于具有长波长的红色区域，而且可以应用于具有短波长的蓝色区域，允许广泛使用并适用于高密度盘。

25. 发明授权

US5252177A Method for forming a multilayer wiring of a semiconductor device 失效
标题翻译：用于形成半导体器件的多层布线的方法
公开(公告)号：US5252177A
公开(公告)日：1993-10-12
申请号：US736772
申请日：1991-07-29
申请人： Jong-Seo Hong , Jin-Hong Kim , Jung-In Hong
发明人： Jong-Seo Hong , Jin-Hong Kim , Jung-In Hong
IPC分类号： H01L21/30 , H01L21/027 , H01L21/304 , H01L21/3205 , H01L21/768 , H01L23/52 , B44C1/22 , C23F7/00
CPC分类号： H01L21/76838 , H01L21/76802 , H01L21/76877
摘要： A method for forming a multilayer wiring, in a method for manufacturing a semiconductor device, is disclosed. The method comprises: forming a contact hole 33 on the surface of a conductive layer 29 by a photolithography, removing a photoresist by using plasma ashing at a predetermined temperature, pressure and amount of oxygen per unit cubic, and simultaneously forming a protective layer 35 consisting of a oxide layer on the surface of the exposed conductive layer. Thus, damage of the surface of wiring caused by the chemical reaction of an organic solvent and water in the subsequent process thereof, is prevented, to provide high density and high speed semiconductor integrated circuit whose electrode characteristics between two wiring layers is improved.
摘要翻译：公开了一种用于形成多层布线的方法，在半导体器件的制造方法中。该方法包括：通过光刻在导电层29的表面上形成接触孔33，通过在预定温度下使用等离子体灰化，压力和每单位立方体的氧量来除去光致抗蚀剂，同时形成保护层35，其包括的暴露的导电层的表面上的氧化物层。因此，防止了在其后续过程中由有机溶剂和水的化学反应引起的布线表面的损伤，从而提供了其两个布线层之间的电极特性提高的高密度和高速的半导体集成电路。

26. 发明授权

US08419853B2 Stacked semiconductor device and related method 有权
标题翻译：叠层半导体器件及相关方法
公开(公告)号：US08419853B2
公开(公告)日：2013-04-16
申请号：US12623515
申请日：2009-11-23
申请人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
发明人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
IPC分类号： C30B21/04
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/76879 , H01L21/76898 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.
摘要翻译：公开了一种叠层半导体器件及其制造方法。堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅和填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部，并且上部部分与基板成锥形。层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

27. 发明授权

US08144443B2 Discharging control apparatus of switching device for inverter 有权
标题翻译：逆变器开关装置的放电控制装置
公开(公告)号：US08144443B2
公开(公告)日：2012-03-27
申请号：US12251613
申请日：2008-10-15
申请人： Jin-Hong Kim
发明人： Jin-Hong Kim
IPC分类号： H02H3/08 , H03K3/00
CPC分类号： H03K17/168 , H03K17/166
摘要： Disclosed is a discharging control apparatus of a switching device for an inverter capable of reducing a spike voltage when the switching device is turned off and reducing a turn-off time of the switching device, the apparatus comprising, a fast discharge circuit section configured to provide a discharging path through which a gate voltage of the switching device is fast discharged at a first discharging speed, an idle discharge circuit section configured to provide a discharging path through which the gate voltage of the switching device is idly discharged at a second discharging speed slower than the first discharging speed, and a spike voltage reduction controller configured to control such that the gate voltage is discharged simultaneously via the fast discharge circuit section and the idle discharge circuit section, when the switching device is turned off in the state that a normal current flows in the switching device, so as to reduce a spike voltage and simultaneously fast turn the switching device off.
摘要翻译：公开了一种用于逆变器的开关装置的放电控制装置，其能够在切换装置关闭时降低尖峰电压并且减小开关装置的关断时间，该装置包括：快速放电电路部，开关装置的栅极电压以第一放电速度快速放电的放电路径;空闲放电电路部，被配置为提供放电路径，通过该放电路径，开关装置的栅极电压以第二放电速度缓慢放电以及尖峰电压降低控制器，被配置为通过快速放电电路部分和空闲放电电路部分同时控制栅极电压，当开关器件在正常电流在开关装置中流动，以便降低尖峰电压并同时快速转动开关设备关闭。

28. 发明授权

US07821601B2 Transflective liquid crystal display device comprising domain partitioning members disposed in the reflective area and not in the transmissive area 有权
标题翻译：透反射液晶显示装置，其包括设置在反射区域中且不在透射区域中的畴分隔部件
公开(公告)号：US07821601B2
公开(公告)日：2010-10-26
申请号：US11155378
申请日：2005-06-17
申请人： Sang-Il Kim , Jeong-Ye Choi , Jin-Hong Kim , Wang-Su Hong
发明人： Sang-Il Kim , Jeong-Ye Choi , Jin-Hong Kim , Wang-Su Hong
IPC分类号： G02F1/1335 , G02F1/1337 , G02F1/1343
CPC分类号： G02F1/133707 , G02F1/133555
摘要： A display device includes a first panel and a second panel facing each other, a liquid crystal layer and a member for determining a tilt direction of liquid crystal molecules of the liquid crystal layer. The display device has a reflective area and a transmissive area. The liquid crystal layer is interposed between the first panel and the second panel. The member is disposed at a portion of the second panel corresponding to the reflective area. The display device realizes a multi-domain structure and prominent reflective efficiency is obtained by utilizing a projection area as a reflective area.
摘要翻译：显示装置包括彼此相对的第一面板和第二面板，液晶层和用于确定液晶层的液晶分子的倾斜方向的构件。显示装置具有反射区域和透射区域。液晶层介于第一面板和第二面板之间。所述构件设置在所述第二面板的与所述反射区域对应的部分。显示装置实现多域结构，并且通过利用投影区域作为反射区域获得突出的反射效率。

29. 发明授权

US07585757B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07585757B2
公开(公告)日：2009-09-08
申请号：US11446151
申请日：2006-06-05
申请人： Jong-Seon Ahn , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Eun-Kuk Chung , Hyung-Mo Yang , Chang-Yeon Yoo , Yun-Seung Kang , Kyung-Tae Jang
发明人： Jong-Seon Ahn , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Eun-Kuk Chung , Hyung-Mo Yang , Chang-Yeon Yoo , Yun-Seung Kang , Kyung-Tae Jang
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L23/53271 , H01L21/76802 , H01L21/76816 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.
摘要翻译：在制造半导体器件的半导体器件和方法中，在绝缘层上形成防穿透膜图案和沟道膜图案。穿透防止图案和绝缘层可以分别包括氮化物和氧化物。穿透防止图案位于通道图案下方。

30. 发明申请

US20090203365A1 METHOD FOR PROVIDING A RECEIVER'S TERMINAL WITH MULTIMEDIA CONTENTS BEFORE A CALL IS CONNECTED 有权
标题翻译：在连接呼叫之前提供多媒体内容的接收者终端的方法
公开(公告)号：US20090203365A1
公开(公告)日：2009-08-13
申请号：US12374780
申请日：2007-08-09
申请人： Won-Jun Lee , Seung-Ook Je , Su-Nyeon Kim , Jae-Young Park , Jin-Hong Kim
发明人： Won-Jun Lee , Seung-Ook Je , Su-Nyeon Kim , Jae-Young Park , Jin-Hong Kim
IPC分类号： H04M3/42
CPC分类号： H04L65/1069 , H04L65/1009 , H04W76/15
摘要： Disclosed is a method for providing a target mobile station with a multimedia content such as audio or video content before a call an originating mobile station attempted to connect is answered by the target mobile station. A mobile communication network protocol for multimedia transmission between a target mobile station and a network is established before a called party receives a call, so that multimedia such as images or moving pictures may be sent to the target mobile station before the called party answers the call. In this way, the called party is able to enjoy a multimedia service before the phone call is connected. Moreover, if the multimedia is an audio or moving picture about a calling party, the called party can identify the calling party based on the multimedia.
摘要翻译：公开了一种用于在目标移动台应答发起移动台尝试连接的呼叫之前向目标移动台提供诸如音频或视频内容的多媒体内容的方法。在被叫方接收呼叫之前，建立用于目标移动台和网络之间的多媒体传输的移动通信网络协议，从而在被叫方应答呼叫之前，诸如图像或运动图像的多媒体可以被发送到目标移动台。以这种方式，被叫方在连接电话之前能够享受多媒体业务。此外，如果多媒体是关于呼叫方的音频或运动图像，则被叫方可以基于多媒体识别主叫方。

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