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    • 26. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURE
    • 薄膜晶体管基板及其制造方法
    • US20080135846A1
    • 2008-06-12
    • US11955252
    • 2007-12-12
    • Kyoung-Ju SHINChong-Chul ChaiMee-Hye Jung
    • Kyoung-Ju SHINChong-Chul ChaiMee-Hye Jung
    • H01L27/12H01L21/84
    • H01L27/1288H01L27/0248H01L27/1214
    • A thin film transistor (“TFT”) substrate in which the size of a pixel TFT formed in a display area is reduced using a single slit mask, and the length of the channel area of a protection TFT constituting an electrostatic discharge protection circuit formed in a non-display area is formed larger than that of the pixel TFT using the same mask pattern. The TFT substrate includes a signal line and a discharge line formed on a substrate, a signal supply pad formed on one end of the signal line to supply a signal to the signal line, and an electrostatic discharge protection circuit including at least one protection TFT including a plurality of channels formed between the signal supply pad and the discharge line and/or between the signal line and the discharge line.
    • 使用单个狭缝掩模,在显示区域中形成的像素TFT的尺寸减小的薄膜晶体管(“TFT”)基板,以及构成静电放电保护电路的保护TFT的沟道面积的长度 使用相同的掩模图案,非显示区域形成为大于像素TFT的非显示区域。 TFT基板包括形成在基板上的信号线和放电线,形成在信号线的一端上以向信号线提供信号的信号供给焊盘,以及包括至少一个保护TFT的静电放电保护电路, 形成在信号供给焊盘和放电线之间和/或信号线与放电线之间的多个通道。