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21. 发明授权

US06372286B1 Barium strontium titanate integrated circuit capacitors and process for making the same 失效
标题翻译：钛酸钡锶集成电路电容器及其制造方法
公开(公告)号：US06372286B1
公开(公告)日：2002-04-16
申请号：US08277035
申请日：1994-07-19
申请人： Masamichi Azuma , Michael C. Scott , Carlos A. Paz de Araujo , Joseph D. Cuchiaro
发明人： Masamichi Azuma , Michael C. Scott , Carlos A. Paz de Araujo , Joseph D. Cuchiaro
IPC分类号： B05D512
CPC分类号： C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/14 , C30B7/00 , C30B29/68 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 Å. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 675° C. and 850° C.
摘要翻译：集成电路电容器，其中电容器电介质是具有小于2000埃的晶粒尺寸的BST薄膜。典型的增益尺寸为40纳米以下。 BST通过旋涂工艺沉积液体前体而形成。原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前预先形成二甲苯交换。前体在空气中在约400℃的温度下干燥，然后在675℃至850℃的温度下在氧气中进行炉退火。

22. 发明授权

US06207465B1 Method of fabricating ferroelectric integrated circuit using dry and wet etching 失效
标题翻译：使用干法和湿蚀刻制作铁电集成电路的方法
公开(公告)号：US06207465B1
公开(公告)日：2001-03-27
申请号：US09062248
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/28568 , H01L21/32132 , H01L21/32134 , H01L21/32136 , H01L27/1085 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： In a ferroelectric integrated circuit, a hydrogen barrier layer comprising titanium or titanium nitride or both is formed over a metal oxide element to protect it from hydrogen degradation. After hydrogen annealing and other process steps causing hydrogenating or reducing conditions, the hydrogen barrier layer is removed in a two-step etching process. The first etch step is a dry etch, preferably a standard ion-mill etching process, which rapidly removes most of the hydrogen barrier layer. The second step is a wet, chemical etch, preferably using a solution containing NH4OH, H2O2, and H2O, which selectively removes remnants of the hydrogen barrier layer from the circuit by oxidizing a chemical element of the barrier layer. The metal oxide material preferably comprises a layered superlattice compound.
摘要翻译：在铁电集成电路中，在金属氧化物元件上形成包含钛或氮化钛或二者的氢阻挡层，以防止其降解氢。在氢退火和引起氢化或还原条件的其它工艺步骤之后，在两步蚀刻工艺中除去氢气阻挡层。第一蚀刻步骤是干蚀刻，优选标准离子磨蚀刻蚀工艺，其快速去除大部分氢阻挡层。第二步是湿化学蚀刻，优选使用含有NH 4 OH，H 2 O 2和H 2 O的溶液，其通过氧化阻挡层的化学元素从电路中选择性地除去氢阻挡层的残余物。金属氧化物材料优选包含层状超晶格化合物。

23. 发明授权

US6130103A Method for fabricating ferroelectric integrated circuits 失效
标题翻译：铁电集成电路的制造方法
公开(公告)号：US6130103A
公开(公告)日：2000-10-10
申请号：US62283
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： G11C11/22 , H01L21/28 , H01L21/314 , H01L21/316 , H01L27/115 , H01L21/00 , H01L21/8242
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28291 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L21/324 , H01L28/56
摘要： An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to the some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer, preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element. A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200.degree. to 350.degree. C. and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800.degree. C. after high-energy hydrogen steps restores ferroelectric properties.
摘要翻译：形成集成电路，其包含含有至少两种金属的金属氧化物材料的铁电体元件。应用各种方法和结构以最小化在电路制造期间由氢引起的铁电性能的劣化。在制造步骤期间，将氧气添加到集成电路的一些元件以用作氢气的吸气剂。为了使氢降解最小化，铁电化合物可以由含有一种或多种构成金属的液体前体制成，超过对应于化学计量平衡浓度的量。形成优选包含氮化钛的氢阻挡层以覆盖铁电元件的顶部。在集成电路中在200〜350℃的温度下进行氢气中的氢热处理，并且在不超过30分钟的时间内对氢的铁电性质的降低最小化，同时恢复集成电路的其它性能。在高能氢步骤之后，在800℃下的氧回收退火恢复铁电性能。

24. 发明授权

US5519234A Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current 失效
标题翻译：铁电介质存储单元可以至少切换千兆周期，并具有低疲劳 - 具有高介电常数和低漏电流
公开(公告)号：US5519234A
公开(公告)日：1996-05-21
申请号：US154927
申请日：1993-11-18
申请人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
发明人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/12 , H01L29/94 , H01L31/113
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated circuit includes a layered superlattice material having the formula A1.sub.w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+ak B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译：集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。。。 Ajwj + ajS1x1 + s1S2x2 + s2。。。 Skxk + ak B1y1 + b1B2y2 + b2。。。 Blyl + blQz-2，其中A1，A2。。。 Aj表示钙钛矿结构中的A位元素，S1，S2。。。 Sk代表超晶格发生器元件B1，B2。。。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为非零。这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。

25. 发明授权

US06686489B2 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06686489B2
公开(公告)日：2004-02-03
申请号：US10037877
申请日：2001-11-09
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

26. 发明授权

US06441414B1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same 失效
标题翻译：铁电场效应晶体管，利用其的存储器及其操作方法
公开(公告)号：US06441414B1
公开(公告)日：2002-08-27
申请号：US09170590
申请日：1998-10-13
申请人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223 , H01L21/28291 , H01L29/78391
摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. The fact that the drain to source current, lds, is always negative if a substrate to drain bias, Vss, of 0.8 volts or more is applied, permits the creation of a read and write truth table. A gate voltage equal to one truth table logic value is applied via a column decoder and a substrate bias equal to another truth table logic value is applied via a row decoder to write to the memory a resultant lds logic state, which can be read whenever a voltage is placed across the source and drain.
摘要翻译：一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。如果施加0.8伏或更高的衬底到漏极偏压Vss，则漏源到源电流lds总是为负，这允许创建读写真值表。通过列解码器施加等于一个真值表逻辑值的栅极电压，并且经由行解码器施加等于另一个真值表逻辑值的衬底偏置，以向存储器写入结果lds逻辑状态，其可以在每当电压跨过源极和漏极放置。

27. 发明授权

US06225156B1 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 失效
标题翻译：对氢曝露具有低灵敏度的铁电集成电路及其制造方法
公开(公告)号：US06225156B1
公开(公告)日：2001-05-01
申请号：US09062264
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/75
摘要： A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.
摘要翻译：在集成电路中的铁电薄膜的上方形成氢阻挡层。氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。铁电薄膜优选包含层状超晶格化合物。添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

28. 发明授权

US6165802A Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation 失效
标题翻译：使用氧气制造铁电集成电路来抑制和修复氢气降解的方法
公开(公告)号：US6165802A
公开(公告)日：2000-12-26
申请号：US62258
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L21/8247 , H01L21/30 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/00
CPC分类号： H01L27/11502 , H01L21/3003 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55
摘要： An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300.degree. to 1000.degree. C. for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the metal oxide element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.
摘要翻译：形成集成电路，其包含含有至少两种金属的金属氧化物材料的铁电体元件。在环境氧气中，在300〜1000℃的温度范围内进行氧回收退火20分钟〜2小时。氧回收退火反转氢降解的作用并恢复铁电性能。随着退火温度和退火时间的增加，氧气回收退火更有效。优选地，金属氧化物元件包括层状超晶格化合物。当层状超晶格化合物包含铌酸铋铋并且前体中的铌/钽摩尔比为约0.4时，铁电性能的氢降解最小化。当层状超晶格化合物的超晶格发生元件和B位元素中的至少一个存在超过由化合物的平衡化学计量式表示的量时，进一步降低氢降解。

29. 发明授权

US6051858A Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
标题翻译：铁电/高介电常数集成电路及其制造方法
公开(公告)号：US6051858A
公开(公告)日：2000-04-18
申请号：US892699
申请日：1997-07-15
申请人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11502 , H01L28/55
摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.
摘要翻译：硅衬底上的晶体管被绝缘层覆盖。导电插塞通过绝缘层到晶体管漏极。直接覆盖插头和漏极的铁电电容器的底部电极接触插头。铁电层是自我构图的，并且完全覆盖在存储单元上。自图案牺牲层完全覆盖铁电层。电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

30. 发明授权

US5883828A Low imprint ferroelectric material for long retention memory and method of making the same 失效
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US5883828A
公开(公告)日：1999-03-16
申请号：US19849
申请日：1998-02-06
申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
摘要翻译：用于诸如FERAMS等的集成记忆电路中的薄膜铁电材料包含具有经验式SrBi2 + E（NbXTa2-X）O9 + 3E / 2的钽酸钽铋铌酸盐，其中E是表示过量的数的铋范围从零到2; X表示0.01〜0.9的过量的铌。当用单向电压脉冲进行挑战时，薄膜表现出极好的耐极化压印特性。

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