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21. 发明申请

US20120287494A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE 有权
标题翻译：显示装置和制造显示装置的方法
公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
申请人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
发明人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , C23C8/10 , C23C8/12 , G02B5/00
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译：金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。因此，使孔板的前表面和后表面具有不同的反射率。在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。

22. 发明授权

US08080449B2 Method for manufacturing thin-film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08080449B2
公开(公告)日：2011-12-20
申请号：US12755584
申请日：2010-04-07
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L21/00
CPC分类号： H01L29/66765
摘要： Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.
摘要翻译：栅电极形成在基板上。形成栅绝缘膜以覆盖栅电极。半导体层形成在与至少栅电极重叠的区域中的栅极绝缘膜上的区域中。使用包含掺杂剂的气体将等离子体处理施加到半导体层，从而增加半导体层的表面层的杂质浓度。在施加了等离子体处理的半导体层的表面层上形成导电膜。通过蚀刻导电膜形成源电极和漏电极。

23. 发明申请

US20110001910A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20110001910A1
公开(公告)日：2011-01-06
申请号：US12828618
申请日：2010-07-01
申请人： Jun Fujiyoshi , Yasukazu Kimura , Daisuke Sonoda
发明人： Jun Fujiyoshi , Yasukazu Kimura , Daisuke Sonoda
IPC分类号： G02F1/1335
CPC分类号： G02F1/13394 , G02F1/133512 , G02F1/134363 , G02F1/136286 , G02F2001/136222
摘要： A liquid crystal display device according to the invention includes a first substrate, on a surface of which are formed: a first color film which has a color other than black, and one portion of which configures a first pixel; a second color film, one portion of which configures a second pixel adjacent to the first pixel; a third color film, at least one portion of which configures a third pixel; and a fourth color film, a second substrate, and a liquid crystal layer sandwiched between the first substrate and second substrate, wherein the first color film and second color film have a first overlapping portion in which they overlap each other in the boundary between the first pixel and second pixel, and the fourth color film, being formed on the first overlapping portion, configures a post spacer which defines the space between the first substrate and second substrate.
摘要翻译：根据本发明的液晶显示装置包括：第一基板，其表面形成：第一彩色胶片，其具有不同于黑色的颜色，其一部分构成第一像素; 第二彩色胶片，其一部分配置与第一像素相邻的第二像素; 第三彩色胶片，其至少一部分配置第三像素; 以及夹在所述第一基板和所述第二基板之间的第四彩色胶片，第二基板和液晶层，其中，所述第一彩色胶片和所述第二彩色胶片具有第一重叠部分，像素和第二像素，并且形成在第一重叠部分上的第四彩色胶片构成限定第一基板和第二基板之间的间隔的柱状间隔物。

24. 发明授权

US07586554B2 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US07586554B2
公开(公告)日：2009-09-08
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

25. 发明授权

US07535024B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07535024B2
公开(公告)日：2009-05-19
申请号：US11600164
申请日：2006-11-16
申请人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L29/04
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译：本发明提供了一种旨在减少制造工时的显示装置的制造方法。在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区，形成在栅极电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电类型形成，杂质第一杂质区域的浓度低于第三杂质区域的杂质浓度第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。

26. 发明申请

US20070108449A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070108449A1
公开(公告)日：2007-05-17
申请号：US11600164
申请日：2006-11-16
申请人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译：本发明提供了一种旨在减少制造工时的显示装置的制造方法。在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区，形成在栅电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电型形成，杂质第一杂质区域的浓度低于第三杂质区域的杂质浓度第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。

27. 发明授权

US07119027B2 Method for manufacturing display device that includes supplying solution to the underside of a glass substrate 失效
标题翻译：一种制造显示装置的方法，包括向玻璃基板的下侧供应溶液
公开(公告)号：US07119027B2
公开(公告)日：2006-10-10
申请号：US10752571
申请日：2004-01-08
申请人： Toshiyuki Ohsawa , Yoichi Takahara , Toshiki Kaneko , Daisuke Sonoda
发明人： Toshiyuki Ohsawa , Yoichi Takahara , Toshiki Kaneko , Daisuke Sonoda
IPC分类号： H01L21/465 , B08B1/02
CPC分类号： H01L21/67028 , H01L21/31111 , H01L29/66757 , H01L29/66765 , H01L51/0019
摘要： Where a thin film formed on a glass substrate is etched with a solution containing a fluoride, insoluble residues formed by the reaction of the solution with glass substrate components adhere to the back of the substrate to cause etching non-uniformity called roller marks. So, a solution is supplied directly to supporting members for supporting the glass substrate, or concentratedly to a region where the substrate and the supporting members come into contact and from a position opposite to the transporting direction of the substrate, or to both the supporting members and regions where the substrate and the supporting members come into contact. This enables the roller marks to be kept from forming, consequently making it possible to improve display quality of display devices.
摘要翻译：在玻璃基板上形成的薄膜用含有氟化物的溶液进行蚀刻的情况下，溶液与玻璃基板成分的反应形成的不溶性残留物粘附到基板的背面，引起称为辊痕的蚀刻不均匀性。因此，将溶液直接供给到用于支撑玻璃基板的支撑构件，或者集中到基板和支撑构件接触的区域以及与基板的输送方向相反的位置，或者支撑构件以及基板和支撑构件接触的区域。由此，可以防止辊痕形成，从而能够提高显示装置的显示质量。

28. 发明授权

US08743333B2 Liquid crystal display device and manufacturing method for same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08743333B2
公开(公告)日：2014-06-03
申请号：US13009895
申请日：2011-01-20
申请人： Daisuke Sonoda , Toshiki Kaneko , Hideo Tanabe
发明人： Daisuke Sonoda , Toshiki Kaneko , Hideo Tanabe
IPC分类号： G02F1/1343 , G02F1/136
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： The present invention provides a liquid crystal display device having gate wires and source/drain wires with a multilayer structure made of the same material which can be manufactured at low cost, as well as a manufacturing method for the same. In accordance with the manufacturing method, a wet etching process is carried out on the gate wires and the source/drain wires using an etchant including hydrofluoric acid and an oxidant, and the concentration of hydrofluoric acid in the etchant is different between the etchant for the gate wires and that for the source/drain wires.
摘要翻译：本发明提供一种液晶显示装置及其制造方法，该液晶显示装置具有栅极线和源极/漏极导线，该导线和源极/漏极导线具有由低成本制造的相同材料制成的多层结构。根据制造方法，使用包括氢氟酸和氧化剂在内的蚀刻剂对栅极线和源极/漏极线进行湿蚀刻处理，并且蚀刻剂中的氢氟酸的浓度在栅极线和源极/漏极线。

29. 发明授权

US07969520B2 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US07969520B2
公开(公告)日：2011-06-28
申请号：US12500639
申请日：2009-07-10
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间绝缘膜增厚引起的开裂的限制膜厚设定为1.5μm以上。

30. 发明申请

US20110024763A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

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