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21. 发明申请

US20120033699A1 SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, DISPLAY APPARATUS INCLUDING THE SURFACE-EMITTING LASER ARRAY AS A LIGHT SOURCE, PRINTER HEAD, AND PRINTER 审中-公开
标题翻译：表面发射激光，表面发射激光阵列，显示装置，包括发光激光阵列作为光源，打印机头和打印机
公开(公告)号：US20120033699A1
公开(公告)日：2012-02-09
申请号：US13191040
申请日：2011-07-26
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： H01S5/18 , H01S5/34
CPC分类号： H01S5/187 , B82Y20/00 , H01S5/0014 , H01S5/0425 , H01S5/183 , H01S5/18311 , H01S5/18383 , H01S5/227 , H01S5/3407 , H01S5/34313 , H01S5/34326 , H01S5/423
摘要： Provided is a surface-emitting laser including a periodic gain structure, which is capable of improving uniformity of carrier injection into multiple active regions and carrier confinement, to thereby improve laser characteristics. The surface-emitting laser includes: a first DBR layer; a first cladding layer; multiple active regions each including a multiple quantum well structure; an interbarrier layer disposed between the multiple active regions; a second cladding layer; a current confinement structure; and a second DBR layer. The multiple active regions are disposed at multiple positions at which light intensity of a gain region is maximum, and the interbarrier layer has an energy level at a bottom of a conduction band thereof which is higher than an energy level at a bottom of a conduction band of a barrier layer of the multiple quantum well structure of each of the multiple active regions, which are disposed at the multiple positions.
摘要翻译：提供了包括周期性增益结构的表面发射激光器，其能够改善载流子注入多个有源区域和载流子限制的均匀性，从而提高激光器特性。表面发射激光器包括：第一DBR层; 第一包层; 多个活性区域各自包括多个量子阱结构; 设置在所述多个活性区域之间的隔壁层; 第二覆层; 目前的限制结构; 和第二DBR层。多个有源区域设置在增益区域的光强度最大的多个位置处，并且隔壁层的导带的底部的能级高于导带底部的能级的多个有源区域中的每一个的多量子阱结构的阻挡层，其设置在多个位置。

22. 发明申请

US20060203539A1 Magnetization reversal methods for magnetic film, magnetoresistive films, and magnetic memories using them 有权
公开(公告)号：US20060203539A1
公开(公告)日：2006-09-14
申请号：US11410705
申请日：2006-04-24
申请人： Takashi Ikeda , Yoshinobu Sekiguchi , Naoki Nishimura
发明人： Takashi Ikeda , Yoshinobu Sekiguchi , Naoki Nishimura
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3281 , H01F10/3286
摘要： A magnetization reversal method is a method of applying an external magnetic field to a magnetoresistive film, in which the magnetoresistive film has a structure wherein a nonmagnetic film is placed between magnetic films with an easy axis of magnetization along a perpendicular direction to a film plane and in which the external magnetic field is comprised of magnetic fields from a plurality of directions including a direction of easy magnetization of the magnetic films.

23. 发明授权

US06611455B2 Magnetic memory 有权
公开(公告)号：US06611455B2
公开(公告)日：2003-08-26
申请号：US10119833
申请日：2002-04-11
申请人： Yoshinobu Sekiguchi , Fumihiro Inui
发明人： Yoshinobu Sekiguchi , Fumihiro Inui
IPC分类号： G11C1114
CPC分类号： G11C11/16
摘要： A solid-state magnetic memory includes: a substrate; a plurality of memory cells arrayed in a matrix on the substrate, each memory cell including a memory element and an element-selecting device, the memory element including two magnetic layers and a nonmagnetic layer sandwiched between the magnetic layers, the easy magnetization axis of each magnetic layer being directed perpendicular to the plane of the layer; a plurality of bit lines connected to the memory elements for reading out data recorded in the memory elements; and a plurality of write lines placed substantially in the same plane so as to sandwich the memory cell columns, at least one end of each write line being joined to one end of another write line so that a current flows in opposite directions at both sides of each memory cell column.

24. 发明授权

US4829534A Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough 失效
标题翻译：半导体激光器件具有半导体区域，用于在激光有源层中形成用于控制电流流过的耗尽层
公开(公告)号：US4829534A
公开(公告)日：1989-05-09
申请号：US814772
申请日：1985-12-30
申请人： Seiichi Miyazawa , Hidetoshi Nojiri , Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
发明人： Seiichi Miyazawa , Hidetoshi Nojiri , Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0424 , H01S5/0425 , H01S5/2059
摘要： A semiconductor laser device wherein a depletion layer is formed in a laser activation layer by biasing the laser device and a third terminal controls an injection current flowing between first and second terminals of the device.
摘要翻译：一种半导体激光器件，其中通过偏置激光器件在激光激活层中形成耗尽层，并且第三端子控制在器件的第一和第二端子之间流动的注入电流。

25. 发明授权

US4794611A Semiconductor laser having superlattice structure 失效
标题翻译：半导体激光器具有超晶格结构
公开(公告)号：US4794611A
公开(公告)日：1988-12-27
申请号：US809770
申请日：1985-12-17
申请人： Toshitami Hara , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Isao Hakamada
发明人： Toshitami Hara , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Isao Hakamada
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34 , H01S5/2004 , H01S5/2009 , H01S5/2013 , H01S5/3211 , H01S5/3216
摘要： There is disclosed a semiconductor laser having a super lattice structure near an active layer, in which the super lattice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a ratio of the thicknesses changes within the super lattice structure toward an active layer.
摘要翻译：公开了一种在有源层附近具有超晶格结构的半导体激光器，其中超晶格结构由至少两种具有不同带隙的材料组成，材料规则地和交替地布置，并且相邻层的厚度材料的变化使得厚度的比例在超晶格结构内向活性层变化。

26. 发明授权

US4794609A Semiconductor laser provided with a plurality of lasers in the form of an array 失效
标题翻译：半导体激光器设置有阵列形式的多个激光器
公开(公告)号：US4794609A
公开(公告)日：1988-12-27
申请号：US807504
申请日：1985-12-11
申请人： Toshitami Hara , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
发明人： Toshitami Hara , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
IPC分类号： H01S5/00 , H01S5/026 , H01S5/40 , H01S3/19 , H01L31/12
CPC分类号： H01S5/0264 , H01S5/4031
摘要： A semiconductor laser comprises a plurality of lasers provided in the form of an array, the lasers being monolithically formed, a plurality of photodetector elements being monolithically formed, a plurality of first separating portions for separating the lasers and the photodetector elements from each other, and at least one second separating portion for separating the plurality of lasers from one another and the plurality of photodetector elements from one another.
摘要翻译：半导体激光器包括以阵列形式提供的多个激光器，激光器被单片地形成，多个光电检测器元件被单片地形成，多个用于将激光器和光电检测器元件彼此分开的第一分离部分，以及至少一个第二分离部分，用于将所述多个激光彼此分离，并且所述多个光电检测器元件彼此分离。

27. 发明授权

US07813402B2 Surface emitting laser and method of manufacturing the same 有权
标题翻译：表面发射激光器及其制造方法
公开(公告)号：US07813402B2
公开(公告)日：2010-10-12
申请号：US12143337
申请日：2008-06-20
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , H01S5/0215 , H01S5/0216 , H01S5/0425 , H01S5/18311 , H01S2301/166
摘要： Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to an active layer; a current confinement region provided in the vicinity of the aperture portion; and a current injection region which is provided on an opposite side to a light output side with respect to the active layer therebetween, in which a current injection path in the current injection region has a smaller diameter than the aperture portion.
摘要翻译：本发明提供一种表面发射激光器，其可以保持基本横模以获得更高功率，同时抑制高阶横模振荡，以及制造表面发射激光器的方法。表面发射激光器包括：作为将电流注入有源层的路径的开口部分; 设置在所述开口部附近的电流限制区域; 以及电流注入区域，其设置在相对于其间的有源层的与光输出侧相反的一侧，其中当前注入区域中的电流注入路径具有比孔部分更小的直径。

28. 发明授权

US06626719B2 Method of manufacturing electron-emitting device as well as electron source and image-forming apparatus 失效
标题翻译：制造电子发射器件的方法以及电子源和图像形成装置
公开(公告)号：US06626719B2
公开(公告)日：2003-09-30
申请号：US08781206
申请日：1997-01-10
申请人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
发明人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
IPC分类号： H01J902
CPC分类号： H01J1/316 , H01J9/027
摘要： An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
摘要翻译：电子发射器件包括一对相对设置的电极和导电膜，包括布置在电极之间的电子发射区域。在制造电子发射器件的过程中形成电子发射区之后，导电膜的电阻降低。

29. 发明授权

US5299045A Light detecting apparatus having a diffraction grating 失效
$Light detecting apparatus having a diffraction grating$
标题翻译：具有衍射光栅的光检测装置
公开(公告)号：US5299045A
公开(公告)日：1994-03-29
申请号：US819387
申请日：1992-01-10
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： G01J1/02 , G01J1/04 , G01J3/18 , G02B6/122 , G02B6/34 , H01L31/10 , H01S5/026 , H01S5/0625 , H01S5/0687 , H01S5/187 , H01S5/50 , H04B10/07 , H04B10/272 , H04B10/275 , H04B10/40 , H04B10/50 , H04B10/60 , H04B10/12 , H04J14/02
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/29323 , H01S5/0264 , H01S5/0687 , H01S5/187 , H01S5/06256 , H01S5/5045
摘要： A light detector provides wavelength tracking, monitoring or similar function by forming a diffraction grating in a light waveguide. Diffracted light from the waveguide is received by a light detecting device having multiple detecting portions. Changes in the emission angle of the diffracted light caused by the wavelength or other fluctuation of the incident light are detected. The detected information can be used for wavelength tracking by injecting current into or applying a voltage to the waveguide to regulate the Bragg wavelength of the light waveguide, for monitoring and/or controlling the oscillation wavelength of a semiconductor laser or for other purposes.
摘要翻译：光检测器通过在光波导中形成衍射光栅来提供波长跟踪，监视或类似功能。来自波导的衍射光被具有多个检测部分的光检测装置接收。检测由入射光的波长或其他波动引起的衍射光的发射角的变化。检测到的信息可以通过向波导注入电流或施加电压来调节光波导的布拉格波长，用于监测和/或控制半导体激光器的振荡波长或用于其它目的而用于波长跟踪。

30. 发明授权

US4971415A Multibeam emitting device 失效
标题翻译：多波束发射装置
公开(公告)号：US4971415A
公开(公告)日：1990-11-20
申请号：US312311
申请日：1989-02-17
申请人： Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Isao Hakamada
发明人： Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Isao Hakamada
IPC分类号： H01L27/15 , H01L33/20 , H01S5/026 , H01S5/062 , H01S5/125 , H01S5/40 , H04N1/036
CPC分类号： H04N1/036 , H01L27/153 , H01S5/026 , H01S5/125 , H01S5/4031 , H01L33/20 , H01S5/06243 , H01S5/4056
摘要： In a multibeam emitting device provided with a plurality of semiconductive light-emitting elements monolithically formed on a semiconductor substrate, the semiconductor light-emitting elements are formed so that the directions of emission of the lights emitted from the elements differ from one another.
摘要翻译：在设置有多个半导体发光元件的单片半导体发光元件的多光束发射器件中，半导体发光元件被形成为使得从元件发射的光的发射方向彼此不同。

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