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21. 发明授权

US5643920A Tricyclic compound having anti-allergic activities 失效
标题翻译：三环化合物具有抗过敏活性
公开(公告)号：US5643920A
公开(公告)日：1997-07-01
申请号：US325339
申请日：1994-10-27
申请人： Hidenori Mochizuki , Kazuo Kato , Ichiro Yamamoto , Kiyoshi Mizuguchi
发明人： Hidenori Mochizuki , Kazuo Kato , Ichiro Yamamoto , Kiyoshi Mizuguchi
IPC分类号： C07D471/06 , A61K31/44 , C07D221/06 , C07D455/03
CPC分类号： C07D471/06
摘要： A nitrogen-containing tricyclic compound represented by formula (I): ##STR1## a salt thereof, or a solvate of said compound or said salt, wherein R represents phenyl or naphthyl group which is unsubstituted or substituted at one to five sites with a group such as a halogen atom; a straight chain or branched alkyl group containing 1 to 10 carbon atoms which is unsubstituted or substituted with one or more halogen atoms; or the like; Y represents hydrogen atom; and Z represents a group such as hydrogen atom, hydroxyl group, or the like; or Y and Z together represent a group such as hydrazono group, hydroxyimino group, or the like which is unsubstituted or substituted with a particular group; and X.sup.1 -X.sup.2 .about.C.about.X.sup.3 represents CH--N--C.dbd.C or N--C.dbd.C--N; provided that when X.sup.1 -X.sup.2 .about.C.about.X.sup.3 represents N--C.dbd.C--N, Y and Z does not together represent hydroxyimino group or oxygen atom; is capable of inhibiting the production of IgE antibody, and therefore, is useful as a prophylactic and/or therapeutic agent for allergic diseases.
摘要翻译： PCT No.PCT / JP93 / 00549 Sec。 371日期：1994年10月27日 102（e）日期1994年10月27日PCT提交1993年4月27日PCT公布。公开号WO93 / 22313 日本公开号为1993年11月11日，由式（I）表示的含氮三环化合物：其中R 1表示未取代或取代的苯基或萘基的化合物或其盐的溶剂化物在一至五个具有卤素原子的位置; 含有1至10个碳原子的直链或支链烷基，其未被取代或被一个或多个卤素原子取代; 或类似物; Y表示氢原子; Z表示氢原子，羟基等基团，或Y和Z一起表示未被取代或被特定基团取代的亚氨基，羟基亚氨基等基团; X1-X2差异C差异X3表示CH-N-C = C或N-C = C-N; 条件是当X 1 -X 2差异C差异X3表示N-C = C-N时，Y和Z不一起表示羟基亚氨基或氧原子; 能够抑制IgE抗体的产生，因此可用作过敏性疾病的预防和/或治疗剂。

22. 发明授权

US5151431A 4,5-dihydro-6H-imidazo[4,5,1-ij]quinolin-6-one-6-oxime-O-sulfonic acid derivatives useful for treating hypertension or edema 失效
标题翻译：用于治疗高血压或EDEMA的4,5-DIHYDRO-6H-IMIDAZO（4,5,1-IJ）喹啉-6-酮-6-氧代-O-硫代酸衍生物
公开(公告)号：US5151431A
公开(公告)日：1992-09-29
申请号：US540950
申请日：1990-06-20
申请人： Hitoshi Inaba , Kazumi Nishijima , Kazuo Kato , Ichiro Yamamoto , Ei Mochida , Kikuo Ohtomo
发明人： Hitoshi Inaba , Kazumi Nishijima , Kazuo Kato , Ichiro Yamamoto , Ei Mochida , Kikuo Ohtomo
IPC分类号： A61K31/47 , A61P3/00 , A61P7/10 , A61P9/12 , C07D471/06
CPC分类号： C07D471/06
摘要： The present invention relates to novel 4,5-dihydro-6H-imidazo[4,5,1-ij]quinolin-6-one-6-oxime-O-sulfonic acid compounds, processes for producing said compounds, intermediate compounds, i.e. novel 4,5-dihydro-6H-imidazo[4,5,1-ij]quinolin-6-one compounds and 4,5-dihydro-6H-imidazo[4,5,1-ij]quinolin-6-one-6-oxime compounds in the synthesis of said compounds, processes for producing said intermediate compounds, and pharmaceutical or veterinary compositions containing said compounds.The present invention is based on the selection of the substituents of 4,5-dihydro-6H-imidazo[4,5,1-ij]-quinolin-6-one-6-oxime-O-sulfonic acid compounds at 2-position, namely 2-(2-penten-3-yl)-, 2-cyclohexyl-, 2-naphthyl-, 2-thienyl-, etc.The compounds of the present invention containing these substituents have potent hypotensive, anti-oedematous and diuretic effects as well as an activity of removing ascites. The compounds of the present invention are extremely useful for treatment of diseases and disorders mentioned above.

24. 发明申请

US20070212898A1 Method for depositing film and method for manufacturing semiconductor device 失效
标题翻译：薄膜沉积方法及制造半导体器件的方法
公开(公告)号：US20070212898A1
公开(公告)日：2007-09-13
申请号：US11715847
申请日：2007-03-09
申请人： Kensuke Takano , Ichiro Yamamoto , Koji Watanabe
发明人： Kensuke Takano , Ichiro Yamamoto , Koji Watanabe
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C23C16/405 , C23C16/56 , H01L21/02332 , H01L21/02337 , H01L21/28202 , H01L21/3144 , H01L29/517
摘要： A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.
摘要翻译：一种沉积膜的方法包括：（a）处理晶片，包括在第一晶片上形成高介电常数膜; 并且实现在第一晶片上形成的高介电常数膜的氮化; 和（b）进行包括在第二晶片上形成高介电常数膜的涂覆工艺; 并且实现在第二晶片上形成的高介电常数膜的氮化。在相同的反应室中进行晶片的处理和进行涂覆处理。涂覆工艺在加工晶片之前进行。

25. 发明授权

US07109649B2 Organic electroluminescent color display unit 失效
公开(公告)号：US07109649B2
公开(公告)日：2006-09-19
申请号：US10354821
申请日：2003-01-30
申请人： Yoshifumi Kato , Kazuyoshi Takeuchi , Ichiro Yamamoto
发明人： Yoshifumi Kato , Kazuyoshi Takeuchi , Ichiro Yamamoto
IPC分类号： H01J1/62
CPC分类号： H01L27/322 , H01L27/3244 , H01L27/3281 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： An organic light emitting diode color display unit has a substrate, an organic electroluminescent device formed on the substrate, a transparent cover plate disposed opposite to the substrate and a color filter element formed on the transparent cover plate. The organic electroluminescent device includes an electroluminescent zone comprising a thin film of an organic electroluminescent material. The color filter element is spaced from the organic electroluminescent device and associated with the organic electroluminescent device. Light from the organic electroluminescent device is emitted from the transparent cover plate.

26. 发明申请

US20050212029A1 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050212029A1
公开(公告)日：2005-09-29
申请号：US11120994
申请日：2005-05-04
申请人： Ichiro Yamamoto
发明人： Ichiro Yamamoto
IPC分类号： C23C16/30 , H01L21/02 , H01L21/20 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/00 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/40 , H01L21/3142 , H01L21/31616 , H01L21/31641 , H01L27/10811 , H01L27/10814 , H01L27/10852
摘要： A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.
摘要翻译：提供了一种半导体器件，其具有由锆合金制成的电容器绝缘膜，其是通过具有包含无定形氧化铝并且其组成为Al x Zr（1- （0.05 <= X <= 0.3），因此在形成MIM（金属绝缘体金属）结构的电容器的工艺中能够防止介电击穿电容绝缘膜，而用作电容器绝缘膜的金属氧化物膜的相对介电常数保持较高。

27. 发明申请

US20050151209A1 Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device 失效
公开(公告)号：US20050151209A1
公开(公告)日：2005-07-14
申请号：US11057742
申请日：2005-02-14
申请人： Ichiro Yamamoto , Naohiko Kimizuka
发明人： Ichiro Yamamoto , Naohiko Kimizuka
IPC分类号： H01L21/28 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/74
CPC分类号： H01L21/823842 , H01L21/2807
摘要： In a semiconductor device including at least one p-channel type MOS transistor, a silicon dioxide layer is formed on a silicon substrate, and a gate electrode is formed on the silicon dioxide layer. The gate electrode silicon has a three-layered structure including a silicon-seed layer formed on the silicon dioxide layer, a silicon/germanium layer formed on the silicon-seed layer, and a polycrystalline silicon layer on the silicon/germanium layer. An average grain size of polycrystalline silicon in the polycrystalline silicon layer is at most 100 nm, and p-type impurities are substantially uniformly distributed in the gate electrode along a height thereof, and the germanium atoms are diffused from the silicon/germanium layer into the silicon-seed layer at high density.

28. 发明授权

US06710060B2 4-hydroxypiperidine derivatives having antiarrhythmic activity 失效
标题翻译：具有抗心律不齐活性的4-羟基哌啶衍生物
公开(公告)号：US06710060B2
公开(公告)日：2004-03-23
申请号：US09969639
申请日：2001-10-04
申请人： Ichiro Yamamoto , Manabu Itoh , Fumiaki Yamasaki , Yutaka Miyazaki , Shinichi Ogawa
发明人： Ichiro Yamamoto , Manabu Itoh , Fumiaki Yamasaki , Yutaka Miyazaki , Shinichi Ogawa
IPC分类号： A61K31445
CPC分类号： C07D405/06 , C07D211/48 , C07D407/06 , C07D409/06
摘要： The present invention relates to a compound represented by the following formula (I) or a salt thereof, or a pharmaceutical composition containing the compound as an effective ingredient: (wherein A represents, for example, phenyl group substituted with R1 and R2 or unsubstituted thienyl group; R1 and R2 each independently represent, for example, hydrogen atom, halogen atom or lower alkoxycarbonyl group; R3 represents, for example, hydrogen atom; R4 represents, for example, lower alkyl group; R5 represents, for example, lower alkoxy group; R6 represents, for example, hydrogen atom; R7 and R8 each represent, for example, hydrogen atom, respectively; X represents, for example, a single bond; Y represents, for example, methylene group or benzylidene group substituted with R1; and Z represents, for example, methylene group.) The compounds according to the present invention that do not suppress the transient sodium current of the cardiac muscle and do not manifest proarrhythimic activity is useful as a therapeutic agent for preventing and/or treating arrhythimia and for preventing sudden death.
摘要翻译：本发明涉及由下式（I）表示的化合物或其盐或含有该化合物作为有效成分的药物组合物：（其中A表示例如被R 1和R 2取代的苯基） 2或未取代的噻吩基; R 1和R 2各自独立地表示例如氢原子，卤素原子或低级烷氧基羰基; R 3表示例如氢原子; R 4，表示例如低级烷基; R 5表示例如低级烷氧基; R 6表示例如氢原子; R 7和R 8各自表示例如氢原子; X表示例如单键; Y表示例如被R 1取代的亚甲基或亚苄基; Z表示例如亚甲基。）根据本发明的化合物不抑制心肌的瞬时钠电流，并不表现出血浆节奏活动可用作预防和/或治疗心律失常并用于预防猝死的治疗剂。

29. 发明授权

US06271085B1 Method for forming a bottom electrode of a storage capacitor 失效
标题翻译：用于形成存储电容器的底部电极的方法
公开(公告)号：US06271085B1
公开(公告)日：2001-08-07
申请号：US09761692
申请日：2001-01-18
申请人： Ichiro Yamamoto
发明人： Ichiro Yamamoto
IPC分类号： H01L218242
CPC分类号： H01L28/87 , H01L27/10852
摘要： The present invention provides a method of forming an electrode, comprising the steps of: forming a dummy electrode having an uneven side face; forming a template insulating film which completely buries the dummy electrode; removing the dummy electrode with leaving the template insulating film so as to form a hole in the template insulating film, wherein a shape of the uneven side face of the dummy electrode as removed is transferred to an inside wall of the hole; filling a metal film into the hole of the template insulating film, wherein the shape of the uneven inside wall of the hole is transferred to a side face of the metal film; and removing the template insulating film to form a metal electrode with an uneven side face.
摘要翻译：本发明提供一种形成电极的方法，包括以下步骤：形成具有不平坦侧面的虚拟电极; 形成完全埋入虚拟电极的模板绝缘膜; 通过离开模板绝缘膜去除虚拟电极以在模板绝缘膜中形成孔，其中去除的虚拟电极的不平坦侧面的形状被转移到孔的内壁; 将金属膜填充到模板绝缘膜的孔中，其中孔的不均匀内壁的形状被转移到金属膜的侧面; 并且去除模板绝缘膜以形成具有不均匀侧面的金属电极。

30. 发明授权

US06260692B1 Conveyor belt 失效
标题翻译：输送带
公开(公告)号：US06260692B1
公开(公告)日：2001-07-17
申请号：US09147382
申请日：1998-12-14
申请人： Kazuo Sashide , Shigeyasu Tanaka , Osamu Shinohara , Yuji Shimotashiro , Teruo Suzuki , Osamu Toda , Ichiro Yamamoto , Shinichi Katsumata , Kojiro Mori , Yoshimitsu Fukuchi
发明人： Kazuo Sashide , Shigeyasu Tanaka , Osamu Shinohara , Yuji Shimotashiro , Teruo Suzuki , Osamu Toda , Ichiro Yamamoto , Shinichi Katsumata , Kojiro Mori , Yoshimitsu Fukuchi
IPC分类号： B65G1534
CPC分类号： B32B25/10 , B32B5/024 , B32B25/12 , B32B25/14 , B32B27/02 , B32B27/12 , B32B2262/0261 , B32B2262/0276 , B32B2262/14 , B32B2433/02 , B65G15/34 , B65G2201/06 , D03D1/0094 , D03D15/00 , D03D15/0027 , D10B2331/02 , D10B2331/04 , Y10S198/957
摘要： A conveyor belt having a reinforcing layer of a synthetic fiber woven fabric embedded between an upper surface cover and a lower surface cover, wherein an elongation at break of the synthetic fiber woven fabric in a belt longitudinal direction is at least 25% and an elongation at a load 10% of a guarantee strength is not greater than 1.5%.
摘要翻译：一种输送带，其具有嵌入在上表面罩和下表面罩之间的合成纤维织物的加强层，其中，所述合成纤维织物在带纵向上的断裂伸长率为至少25％，并且在负载10％的保证强度不大于1.5％。

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