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21. 发明授权

US07034406B2 Semiconductor device with alignment mark 失效
标题翻译：具有对准标记的半导体器件
公开(公告)号：US07034406B2
公开(公告)日：2006-04-25
申请号：US10870976
申请日：2004-06-21
申请人： Yasuhiro Ido , Takeshi Iwamoto , Kazushi Kono
发明人： Yasuhiro Ido , Takeshi Iwamoto , Kazushi Kono
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an alignment mark arranged on a surface, and including a high reflectance portion and a flat low reflectance portion; and a first silicon oxide film formed internally and provided with a plurality of first embedded portions filled with a material different from a material of portions around the embedded portions. The first embedded portions are formed in at least a portion of a region avoiding a portion shaded by projecting the high reflectance portion onto the silicon oxide film.
摘要翻译：半导体器件包括布置在表面上的对准标记，并且包括高反射率部分和平坦的低反射率部分; 以及第一氧化硅膜，其内部形成有多个第一嵌入部分，该第一嵌入部分填充有与嵌入部分周围的部分材料不同的材料。第一嵌入部分形成在区域的至少一部分中，避免通过将高反射率部分投影到氧化硅膜上而被遮蔽的部分。

22. 发明授权

US06362514B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06362514B1
公开(公告)日：2002-03-26
申请号：US09352340
申请日：1999-07-13
申请人： Yasuhiro Ido , Takeshi Iwamoto , Rui Toyota
发明人： Yasuhiro Ido , Takeshi Iwamoto , Rui Toyota
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L23/53228 , H01L2924/0002 , Y10S257/91 , H01L2924/00
摘要： There is described a semiconductor device having a copper fuse which prevents damage to a silicon substrate beneath the copper fuse, which would otherwise be caused by a laser beam radiated to blow the copper fuse. A light absorbing layer is formed on the copper fuse layer from material whose light absorption coefficient is greater than that of a copper wiring layer. Light absorbed by the light absorbing layer is transmitted, through heat conduction, to the copper wiring layer beneath the light absorbing layer and further to a barrier metal layer beneath the copper wiring layer. Even when the widely-used conventional laser beam of infrared wavelength is used, the copper fuse can be blown. Since a guard layer is formed below the fuse layer, there can be prevented damage to the silicon substrate, which would otherwise be caused by exposure to the laser beam of visible wavelength. Therefore, the copper fuse can be blown even by use of a laser beam of visible wavelength whose light absorption coefficient for copper is high.
摘要翻译：描述了具有铜熔丝的半导体器件，其防止对铜熔丝下方的硅衬底的损坏，否则这将由被辐射以吹制铜熔丝的激光束引起。光吸收层由光吸收系数大于铜布线层的材料形成在铜熔丝层上。由光吸收层吸收的光通过热传导传递到光吸收层下面的铜布线层，并且进一步传输到铜布线层下面的阻挡金属层。即使使用广泛使用的红外波长的常规激光束，也可以熔断铜熔丝。由于保护层形成在熔丝层的下面，所以可以防止对硅衬底的损坏，否则这将因暴露于可见波长的激光束而引起。因此，即使通过使用铜的光吸收系数高的可见波长的激光束也能够熔断铜熔丝。

23. 发明申请

US20120048401A1 BALL CHECK VALVE 审中-公开
标题翻译：球检查阀
公开(公告)号：US20120048401A1
公开(公告)日：2012-03-01
申请号：US13256350
申请日：2010-03-24
申请人： Seiji Yamashita , Takeshi Iwamoto
发明人： Seiji Yamashita , Takeshi Iwamoto
IPC分类号： F16K15/00
CPC分类号： F16K15/04 , F16K47/02 , Y10T137/7904
摘要： A ball check valve that prevents vibration of the ball that occurs when fluids are conducted, so as to limit noise, without reducing the flow rate of the fluid includes a cylindrical valve main body having two opening parts and provided on an inner face with axially oriented elongate protrusions; a holding ring, which is held on the upstream opening part of the valve main body, abutting end faces of the elongate protrusions; a seat ring, which is disposed adjacent to or fitted with the holding ring; and a globular valve element, which is held so as to be able to reciprocate between stop faces on the elongate protrusions and a valve-closed position. When the globular valve element is abutting the stop faces of the elongate protrusions, the relationship between: the area S1 of a flow path opening formed between an outer circumferential line that is orthogonal to the axis at the center of gravity of the globular valve element and the inner circumferential face of the valve main body; and the area S2 of a flow path opening that is formed between the holding ring and the globular valve element at a line that connects the center of gravity of the globular valve element and the downstream inner circumferential line of the seat ring or the holding ring is S2=0.45 S1 to 0.65 S1.
摘要翻译：一种防止流体发生的球的振动的球止回阀，以便在不降低流体的流量的情况下限制噪音，包括具有两个开口部的圆筒形阀主体，并且设置在具有轴向定向的内表面细长突起; 保持在阀主体的上游开口部上的保持环抵接在细长突起的端面上; 座圈，邻近或装配有固定环; 以及球形阀元件，其被保持以能够在细长突起上的止动面之间往复运动，并且具有阀关闭位置。当球状阀元件与细长突起的止动面抵接时，形成在与球状阀元件的重心处的轴线正交的外周线之间形成的流路开口的面积S1与阀主体的内周面; 并且在连接球状阀元件的重心与座环或保持环的下游内周线之间的线上形成在保持环和球形阀元件之间的流路开口的区域S2为 S2 = 0.45 S1〜0.65 S1。

24. 发明授权

US07728406B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07728406B2
公开(公告)日：2010-06-01
申请号：US11584513
申请日：2006-10-23
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.
摘要翻译：本发明的半导体器件包括：衬底; 形成在所述基板上的多个布线层; 形成在所述多个布线层的最上面的保险丝; 由单个膜构成的第一绝缘膜，形成在所述最上布线层上，使得所述第一绝缘膜与所述保险丝的表面接触; 以及形成在所述第一绝缘膜上的第二绝缘膜; 其中所述第二绝缘膜在其最上布线层的熔丝区域的上方形成有开口，使得只有所述第一绝缘膜存在于所述熔丝区域的上方，所述熔丝区域包括所述熔丝并且当所述熔丝被熔断时被照射激光束。

25. 发明申请

US20070063225A1 Semiconductor device, and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US20070063225A1
公开(公告)日：2007-03-22
申请号：US11602955
申请日：2006-11-22
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L27/10 , H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, a fuse that can be blown by the radiation of light formed above the substrate, and insulating films formed on the fuse and on the substrate. One of the insulating films includes a flat portion formed on the substrate and the surface thereof is higher than the surface of the fuse, and a protruded portion formed on the fuse continuously from the flat portion, and protruded from the surface of the flat portion.
摘要翻译：半导体器件包括衬底，可以通过在衬底上形成的光的辐射而被吹制的熔丝以及形成在熔丝和衬底上的绝缘膜。绝缘膜中的一个包括形成在基板上的平坦部分，其表面高于熔丝的表面，并且从平坦部分连续地形成在熔丝上并从平坦部分的表面突出的突出部分。

26. 发明授权

US06245779B1 Naphthyridine derivatives 失效
标题翻译：萘啶衍生物
公开(公告)号：US06245779B1
公开(公告)日：2001-06-12
申请号：US09445564
申请日：1999-12-09
申请人： Tadao Shibutani , Yasuo Shoji , Takashi Okamura , Tsuneo Yasuda , Takeshi Iwamoto
发明人： Tadao Shibutani , Yasuo Shoji , Takashi Okamura , Tsuneo Yasuda , Takeshi Iwamoto
IPC分类号： A61K314375
CPC分类号： C07D471/04
摘要： The present invention provides a naphthyridine derivative represented by the formula (1) wherein A is lower alkylene; R1 is H or an electron pair “-”; R2 is optionally substituted phenyl; when R1 is an electron pair “-”, R3 is a group represented by (wherein R4 and R5 each represent lower alkyl, etc.); when R1 is H, R3 is a group —S—R6 (wherein R6 is lower alkyl, etc.); and R7 is H or lower alkyl; and also provides an analgesic composition containing the above derivative as an active ingredient.
摘要翻译：本发明提供由式（1）表示的萘啶衍生物，其中A为低级亚烷基; R1是H或电子对“ - ”; R2是任选取代的苯基;当R 1是电子对“ - ”时，R 3是由（其中R 4和R 5各自表示低级烷基等）表示的基团; 当R 1为H时，R 3为基团-S-R 6（其中R 6为低级烷基等）; 并且R 7为H或低级烷基; 并且还提供含有上述衍生物作为活性成分的镇痛组合物。

27. 发明授权

US6166016A Amide derivatives 失效
标题翻译：酰胺衍生物
公开(公告)号：US6166016A
公开(公告)日：2000-12-26
申请号：US194727
申请日：1998-12-02
申请人： Takashi Okamura , Yasuo Shoji , Tadao Shibutani , Tsuneo Yasuda , Takeshi Iwamoto
发明人： Takashi Okamura , Yasuo Shoji , Tadao Shibutani , Tsuneo Yasuda , Takeshi Iwamoto
IPC分类号： C07D473/00 , A61K31/505 , C07D473/34 , C07D487/04 , C07D495/04 , C07C233/64 , A61K31/166 , A61K31/52
CPC分类号： C07D487/04 , C07D473/34 , C07D495/04
摘要： The invention provides amide derivatives which are useful as analgesics, anti-inflammatory agents, antimicrobial drugs, hypoglycemic agents, hypolipidemic agents, antihypertensive agents, anti-cancer agents, etc., the derivatives being represented by the formula ##STR1## wherein ring A represents a benzene ring, a naphthalene ring, a pyridine ring or a furan ring; R.sup.4 represents a heterocyclic group selected from the group consisting of a lower alkyl-substituted thieno[3,2-d]pyrimidin-4-yl group, an optionally substituted pyrazolo[1,5-a]-1,3,5-triazin-4-yl group, a pyrazolo[3,4-d]pyrimidin-4-yl group substituted at the 6-position and a purin-6-yl group substituted at the 2-position; and R.sup.5 represents a hydrogen atom or a group represented by ##STR2##
摘要翻译： PCT No.PCT / JP97 / 01875 Sec。 371日期1998年12月2日第 102（e）日期1998年12月2日PCT提交1997年6月2日PCT公布。公开号WO97 / 46560 PCT 日期1997年11月12日本发明提供可用作止痛剂，抗炎剂，抗微生物药物，降血糖药，降血脂药，降压药，抗癌剂等的酰胺衍生物，其衍生物由下式表示：其中环 A表示苯环，萘环，吡啶环或呋喃环; R 4表示选自低级烷基取代的噻吩并[3,2-d]嘧啶-4-基，任选取代的吡唑并[1,5-a] -1,3,5-三嗪 -4-基，在6位被取代的吡唑并[3,4-d]嘧啶-4-基和在2位被取代的嘌呤-6-基; 并且R 5表示氢原子或由其表示的基团

28. 发明申请

US20070102786A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070102786A1
公开(公告)日：2007-05-10
申请号：US11584513
申请日：2006-10-23
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.
摘要翻译：本发明的半导体器件包括：衬底; 形成在所述基板上的多个布线层; 形成在所述多个布线层的最上面的保险丝; 由单个膜构成的第一绝缘膜，形成在所述最上布线层上，使得所述第一绝缘膜与所述保险丝的表面接触; 以及形成在所述第一绝缘膜上的第二绝缘膜; 其中所述第二绝缘膜在其最上布线层的熔丝区域的上方形成有开口，使得只有所述第一绝缘膜存在于所述熔丝区域的上方，所述熔丝区域包括所述熔丝并且当所述熔丝被熔断时被照射激光束。

29. 发明申请

US20060076642A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060076642A1
公开(公告)日：2006-04-13
申请号：US11237772
申请日：2005-09-29
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/53238 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.
摘要翻译：本发明提供一种半导体器件，包括：衬底; 形成在所述基板的主表面上的第一绝缘膜; 形成在所述第一绝缘膜上的第二绝缘膜; 形成在所述第二绝缘膜上的多个保险丝; 以及设置在所述第一和第二绝缘膜中的阻挡层，所述阻挡层由能够反射照射以吹动所述多个保险丝的激光的材料形成。当从基板的主表面观察时，阻挡层与形成有多个熔丝的区域重叠。多个保险丝可以分别形成在第二绝缘膜上彼此层压的两个或更多个绝缘膜层中。

30. 发明授权

US06372749B1 Pyrazolo[1,5-a]pyrimidine derivatives 失效
标题翻译：吡唑并[1,5-a]嘧啶衍生物
公开(公告)号：US06372749B1
公开(公告)日：2002-04-16
申请号：US09700764
申请日：2000-11-20
申请人： Takashi Okumura , Yasuo Shoji , Tadao Shibutani , Tsuneo Yasuda , Takeshi Iwamoto
发明人： Takashi Okumura , Yasuo Shoji , Tadao Shibutani , Tsuneo Yasuda , Takeshi Iwamoto
IPC分类号： C07D48704
CPC分类号： C07D487/04
摘要： The present invention provides pyrazolo[1,5-a]pyrimidine derivatives represented by the formula (1) wherein R1 represents lower alkyl or the like; one of R2 and R3 represents hydrogen and the other represents phenyl having lower alkoxy or the like, and R4 is hydrogen, carboxyl, lower alkoxy-carbonyl or the like. The derivatives of the invention have pharmacological effects such as analgesic action, inhibitory effect on nitrogen monoxide synthetase and the like and are useful as analgesics. The derivatives of the invention are also useful as therapeutic or prophylactic agents for septicemia, endotoxin shock, chronic articular rheumatism, etc.
摘要翻译：本发明提供由式（1）表示的吡唑并[1,5-a]嘧啶衍生物，其中R 1表示低级烷基等; R2和R3之一表示氢，另一个表示具有低级烷氧基等的苯基，R4表示氢，羧基，低级烷氧基 - 羰基等。本发明的衍生物具有镇痛作用，对一氧化氮合成酶等的抑制作用等药理作用，可用作止痛剂。本发明的衍生物还可用作败血症，内毒素休克，慢性关节风湿病等的治疗或预防剂。

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