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21. 发明申请

US20070063307A1 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US20070063307A1
公开(公告)日：2007-03-22
申请号：US11549297
申请日：2006-10-16
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L23/58
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

22. 发明申请

US20050179472A1 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US20050179472A1
公开(公告)日：2005-08-18
申请号：US11007254
申请日：2004-12-09
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L29/00 , H01L29/78 , H02M1/08 , H02M3/00 , H02M3/158 , H02M7/00 , H03B1/00
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

23. 发明授权

US07579669B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US07579669B2
公开(公告)日：2009-08-25
申请号：US11549297
申请日：2006-10-16
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L27/00
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

24. 发明授权

US07138698B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
公开(公告)号：US07138698B2
公开(公告)日：2006-11-21
申请号：US11007254
申请日：2004-12-09
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L23/58
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.

25. 发明授权

US08604544B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08604544B2
公开(公告)日：2013-12-10
申请号：US13049540
申请日：2011-03-16
申请人： Kenichi Matsushita
发明人： Kenichi Matsushita
IPC分类号： H01L29/66
CPC分类号： H01L27/0623 , H01L29/1095 , H01L29/7397
摘要： According to one embodiment, a semiconductor device includes a first main electrode, a base layer of a first conductivity type, a barrier layer of the first conductivity type, a diffusion layer of a second conductivity type, a base layer of the second conductivity type, a first conductor layer, a second conductor layer, and a second main electrode. Bottoms of the barrier layer of the first conductivity type and the diffusion layer of the second conductivity type are positioned on the first main electrode side of lower ends of the first conductor layer and the second conductor layer. The barrier layer of the first conductivity type and the diffusion layer of the second conductivity type form a super junction proximally to tips of the first conductor layer and the second conductor layer.
摘要翻译：根据一个实施例，半导体器件包括第一主电极，第一导电类型的基极层，第一导电类型的势垒层，第二导电类型的扩散层，第二导电类型的基极层，第一导体层，第二导体层和第二主电极。第一导电类型的阻挡层的底部和第二导电类型的扩散层位于第一导体层和第二导体层的下端的第一主电极侧上。第一导电类型的阻挡层和第二导电类型的扩散层形成与第一导体层和第二导体层的尖端近端的超级结。

26. 发明授权

US08735989B2 Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor 有权
标题翻译：包括具有绝缘栅双极晶体管的主元件和具有电阻器和绝缘栅双极晶体管的感测元件的半导体器件
公开(公告)号：US08735989B2
公开(公告)日：2014-05-27
申请号：US13290991
申请日：2011-11-07
申请人： Kenichi Matsushita
发明人： Kenichi Matsushita
IPC分类号： H01L29/732
CPC分类号： H01L29/7397 , H01L29/0619
摘要： According to one embodiment, a semiconductor device includes a main element and a sense element. The main element is connected between a collector terminal and an emitter terminal. The main element has an insulated gate bipolar transistor structure. The sense element is connected in parallel with the main element via a sense resistor between the collector terminal and the emitter terminal. The sense element has an insulated gate bipolar transistor structure with a feedback capacitance larger than a feedback capacitance of the main element.
摘要翻译：根据一个实施例，半导体器件包括主元件和感测元件。主元件连接在集电极端子和发射极端子之间。主要元件具有绝缘栅双极晶体管结构。感测元件通过集电极端子和发射极端子之间的检测电阻与主元件并联连接。感测元件具有绝缘栅双极晶体管结构，其反馈电容大于主元件的反馈电容。

27. 发明授权

US06822313B2 Diode 失效
标题翻译：二极管
公开(公告)号：US06822313B2
公开(公告)日：2004-11-23
申请号：US10105390
申请日：2002-03-26
申请人： Kenichi Matsushita
发明人： Kenichi Matsushita
IPC分类号： H01L2900
CPC分类号： H01L27/0814 , H01L29/861
摘要： A diode has a semiconductor layer of a first conductive type having a first principal plane and a second principal plane facing the first principal plane; a first impurity layer of a second conductive type which is opposite to said first conductive type, said first impurity layer being selectively formed on said first principal plane of said semiconductor layer; a second impurity layer of the first conductive type which is selectively formed on said first principal plane of said semiconductor layer apart from said first impurity layer; a first main electrode connected to said first impurity layer; a second main electrode connected to said second impurity layer; a third impurity layer of the first conductive type which is selectively formed on said second principal plane of said semiconductor layer and which is formed so as to face said first impurity layer; a fourth impurity layer of the second conductive type which is selectively formed on said second principal plane of said semiconductor layer and which is formed so as to face said second impurity layer; and short-circuit part to electrically connect said third impurity layer to said fourth impurity layer.
摘要翻译：二极管具有第一导电类型的半导体层，其具有第一主平面和面向第一主平面的第二主平面; 与所述第一导电类型相反的第二导电类型的第一杂质层，所述第一杂质层选择性地形成在所述半导体层的所述第一主平面上; 所述第一导电类型的第二杂质层选择性地形成在所述半导体层的与所述第一杂质层之间的所述第一主平面上; 连接到所述第一杂质层的第一主电极; 连接到所述第二杂质层的第二主电极; 所述第一导电类型的第三杂质层选择性地形成在所述半导体层的所述第二主平面上，并且形成为面对所述第一杂质层; 所述第二导电类型的第四杂质层选择性地形成在所述半导体层的所述第二主平面上，并且形成为面对所述第二杂质层; 以及将所述第三杂质层电连接到所述第四杂质层的短路部分。

28. 发明授权

US5695540A Method of spacing fibers of optical fiber tapes and coupling the fibers 失效
标题翻译：隔开光纤带纤维间隔并连接纤维的方法
公开(公告)号：US5695540A
公开(公告)日：1997-12-09
申请号：US441304
申请日：1995-05-15
申请人： Hiroshi Suganuma , Tomoyuki Hattori , Hiroaki Takimoto , Eisuke Sasaoka , Hiroshi Yokota , Kenichi Matsushita
发明人： Hiroshi Suganuma , Tomoyuki Hattori , Hiroaki Takimoto , Eisuke Sasaoka , Hiroshi Yokota , Kenichi Matsushita
IPC分类号： G02B6/255 , G02B6/28 , C03B29/00
CPC分类号： G02B6/2835 , G02B6/2856 , G02B6/2551
摘要： Optical fibers are fixed to elongating tables by optical fiber fixing jigs. Coatings are removed from portions of the fibers and respective fibers of two different groups are placed into tight contact with one another. The fibers are then heated by a gas burner 4A so as to be welded integrally with each other, and are then elongated. In one preferred embodiment, the fibers are arranged such that there are gaps therebetween. These gaps are substantially 250 .mu.m. The gaps are sufficiently wide that heating gas flows in a manner such that all the optical fiber strands are heated uniformly to make it possible uniform welding and elongation.
摘要翻译：光纤通过光纤固定夹固定在伸长台上。从纤维的部分去除涂层，并且将两个不同组的相应纤维彼此紧密接触。然后通过气体燃烧器4A加热纤维，以便彼此整体焊接，然后被拉长。在一个优选实施例中，纤维布置成使得它们之间存在间隙。这些差距大致是250亩。间隙足够宽，使得加热气体以使得所有光纤线均匀地加热以使其可能均匀的焊接和伸长的方式流动。

29. 发明授权

US5417734A Method of producing optical fiber couplers using rectifier rods to provide even heat distribution 失效
标题翻译：使用整流棒制造光纤耦合器以提供均匀散热的方法
公开(公告)号：US5417734A
公开(公告)日：1995-05-23
申请号：US145509
申请日：1993-11-04
申请人： Hiroshi Suganuma , Tomoyuki Hattori , Hiroaki Takimoto , Eisuke Sasaoka , Hiroshi Yokota , Kenichi Matsushita
发明人： Hiroshi Suganuma , Tomoyuki Hattori , Hiroaki Takimoto , Eisuke Sasaoka , Hiroshi Yokota , Kenichi Matsushita
IPC分类号： G02B6/255 , G02B6/28 , G02B6/287
CPC分类号： G02B6/2835 , G02B6/2856 , G02B6/2551
摘要： Optical fibers are fixed to elongating tables by optical fiber fixing jigs. Coatings are removed from portions of the fibers and respective fibers of two different groups are placed into tight contact with one another. Rectifier rods, supported movably by rectifier rod supporting members, are disposed outside the optical fiber strands. The fibers are then heated by a gas burner 4A so as to be welded integrally with each other, and are then elongated. By using rectifier rods, the outside optical fiber strands of the groups being welded are not so strongly heated that uniform welding and elongation can be realized. In one preferred embodiment, the fibers are arranged such that there are gaps therebetween. These gaps are substantially 250 .mu.m. The gaps are sufficiently wide that heating gas flows in a manner such that all the optical fiber strands are heated uniformly to make it possible uniform welding and elongation.
摘要翻译：光纤通过光纤固定夹固定在伸长台上。从纤维的部分去除涂层，并且将两个不同组的相应纤维彼此紧密接触。由整流棒支撑件可移动地支撑的整流棒设置在光纤线束的外部。然后通过气体燃烧器4A加热纤维，以便彼此整体焊接，然后被拉长。通过使用整流棒，被焊接的组的外部光纤线束不会被强烈加热，从而可以实现均匀的焊接和伸长。在一个优选实施例中，纤维布置成使得它们之间存在间隙。这些差距大致是250亩。间隙足够宽，使得加热气体以使得所有光纤线均匀地加热以使其可能均匀的焊接和伸长的方式流动。

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