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    • 23. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20050087853A1
    • 2005-04-28
    • US10855889
    • 2004-05-28
    • Katsuya OkumuraKoji MaruyamaKazuya NagasekiAkiteru Rai
    • Katsuya OkumuraKoji MaruyamaKazuya NagasekiAkiteru Rai
    • H01L23/52H01L21/3205H01L21/768H01L23/12H01L23/48H01L25/065H01L25/07H01L25/18H01L23/02H05K7/02
    • H01L21/76898H01L23/481H01L2924/0002H01L2924/00H01L2924/00012
    • The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
    • 本发明涉及一种半导体器件,其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接, 其制造方法。 根据本发明的半导体器件包括:第一衬底,包括前表面和后表面;第一器件,具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构,所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。
    • 29. 发明授权
    • Electron beam lithography system and pattern writing method
    • 电子束光刻系统和图案写入方法
    • US06525328B1
    • 2003-02-25
    • US09624355
    • 2000-07-24
    • Motosuke MiyoshiYuichiro YamazakiKatsuya Okumura
    • Motosuke MiyoshiYuichiro YamazakiKatsuya Okumura
    • H01J3730
    • B82Y10/00B82Y40/00H01J37/3174
    • An electron beam lithography system 10 comprises an electron gun including a rectangular cathode 1 having an emission surface having an aspect ratio of other than 1, an illumination optical system 3 of an asymmetric lens system including multipole lenses Qa1 and Qa2, a CP aperture 5, and a projection optical system 8 of a symmetric lens system including multipole lenses Qb1 through Qb4. This electron beam lithography system 10 is used for emitting an electron beam at a low acceleration of 5 kV or less from the rectangular cathode 1, for controlling the illumination optical system so as to form an image of a desired character of the CP aperture 5 on an isotropic plane of incidence at different demagnifications in minor-axis and major-axis directions in accordance with the aspect ratio of the rectangular cathode 1, and for controlling the projection optical system 8 so that the electron beam leaving the CP aperture 5 as an aperture image is incident on a substrate 21 at the same demagnification in the minor-axis and major-axis directions and at different incident angles in the minor-axis and major-axis directions while passing through the trajectory without establishing any crossovers.
    • 电子束光刻系统10包括电子枪,其包括具有不同于1的纵横比的发射表面的矩形阴极1,包括多极透镜Qa1和Qa2的非对称透镜系统的照明光学系统3,CP孔5, 以及包括多极透镜Qb1至Qb4的对称透镜系统的投影光学系统8。 该电子束光刻系统10用于从矩形阴极1以5kV以下的低加速度发射电子束,用于控制照明光学系统,以便形成CP孔5的所需字符的图像 根据矩形阴极1的纵横比在短轴和长轴方向上的不同缩小的各向同性平面,并且用于控制投影光学系统8,使得离开CP孔5的电子束作为孔 图像在短轴和长轴方向上以相同的缩小入射在基板21上,并且在短轴和长轴方向上以不同的入射角同时穿过轨迹而不建立任何交叉。