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21. 发明授权

US5728223A Reactant gas ejector head and thin-film vapor deposition apparatus 失效
标题翻译：反应物气体喷射头和薄膜蒸镀装置
公开(公告)号：US5728223A
公开(公告)日：1998-03-17
申请号：US662763
申请日：1996-06-10
申请人： Takeshi Murakami , Noriyuki Takeuchi , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Yukio Fukunaga , Akihisa Hongo
发明人： Takeshi Murakami , Noriyuki Takeuchi , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Yukio Fukunaga , Akihisa Hongo
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45512 , C23C16/455 , C23C16/45565 , C23C16/4557 , C30B25/14
摘要： A reactant gas ejector head in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages for introducing reactant gases, a gas mixing chamber for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.
摘要翻译：薄膜气相沉积设备中的反应气体喷射头包括至少两个用于引入反应气体的反应气体入口通道，用于混合从反应气体入口通道引入的反应气体的气体混合室和设置在气体下游的喷嘴混合室，用于将来自气体混合室的混合气体整流成均匀的流动并将均匀的流动施加到基底。

22. 发明申请

US20090117828A1 Polishing apparatus and substrate processing apparatus 有权
标题翻译：抛光装置和基板处理装置
公开(公告)号：US20090117828A1
公开(公告)日：2009-05-07
申请号：US10581669
申请日：2005-02-23
申请人： Akihisa Hongo , Kenya Ito , Kenji Yamaguchi , Masayuki Nakanishi
发明人： Akihisa Hongo , Kenya Ito , Kenji Yamaguchi , Masayuki Nakanishi
IPC分类号： B24B49/04 , B24B1/04 , B24B49/12 , B24B9/02 , B24B57/02
CPC分类号： B24B37/02 , B24B9/065 , B24B21/002
摘要： The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing (3) for forming a polishing chamber (2) therein, a rotational table (1) for holding and rotating a substrate (W), a polishing tape supply mechanism (6) for supplying a polishing tape (5) into the polishing chamber (2) and supplied to the polishing chamber (2), a polishing head (35) for pressing the polishing tape (5) against a bevel portion of the substrate (W), a liquid supply (50) for supplying a liquid to a front surface and a rear surface of the substrate (W), and a regulation mechanism (16) for making an internal pressure of the polishing chamber (2) being set to be lower than an external pressure of the polishing chamber (2).
摘要翻译：本发明涉及一种用于去除在基板的周边部分产生的表面粗糙度或用于去除形成在基板的周边部分上的膜的抛光装置。抛光装置包括用于在其中形成研磨室（2）的壳体（3），用于保持和旋转基底（W）的旋转台（1），用于供应研磨带（5）的研磨带供给机构）到抛光室（2）中并供给到抛光室（2），用于将抛光带（5）压靠在基板（W）的斜面部分上的抛光头（35）将液体供给到所述基板（W）的前表面和后表面;以及调节机构（16），用于使所述研磨室（2）的内部压力被设定为低于所述研磨室（2）。

23. 发明授权

US06921466B2 Revolution member supporting apparatus and semiconductor substrate processing apparatus 有权
标题翻译：革命会员支持装置和半导体基板处理装置
公开(公告)号：US06921466B2
公开(公告)日：2005-07-26
申请号：US09842650
申请日：2001-04-27
申请人： Akihisa Hongo , Ichiro Katakabe , Shinya Morisawa
发明人： Akihisa Hongo , Ichiro Katakabe , Shinya Morisawa
IPC分类号： B24B37/34 , H01L21/00 , H01L21/687 , C25D5/02 , H01L21/288
CPC分类号： H01L21/68728 , B24B37/345 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/06 , H01L21/67046 , H01L21/67051 , H01L21/6715 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67201 , H01L21/67253 , H01L21/67742 , H01L21/67748 , H01L21/67766 , H01L21/68707
摘要： A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of roation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.
摘要翻译：旋转构件支撑装置保持并旋转诸如半导体晶片的盘形物体（待旋转物体）。旋转构件支撑装置包括围绕旋转轴线旋转的可旋转构件，以及沿着具有与可旋转构件的旋转轴线对应的中心的圆周设置的多个保持构件，可旋转构件旋转时的旋转，其中保持构件绕其自身的中心轴线摆动。

24. 发明申请

US20050098439A1 Substrate plating method and apparatus 审中-公开
标题翻译：基板电镀方法及装置
公开(公告)号：US20050098439A1
公开(公告)日：2005-05-12
申请号：US11008098
申请日：2004-12-10
申请人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/42 , C25D17/00
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/10 , C25D7/12 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.
摘要翻译：提供了一种用于电镀基板的方法和装置，其中在基板中形成的细凹坑，例如用于布线的精细通道，用铜，铜合金或其他具有低电阻的材料填充。该方法在具有细凹坑（10）的晶片W上进行，以用金属（13）填充细凹坑，并且包括通过将晶片浸入具有优异投掷成分的第一电镀液中来进行第一电镀工艺（11）功率; 以及通过将基板浸入具有优良平整性能的组成的第二电镀溶液中来进行第二电镀工艺（12）。

25. 发明授权

US06811658B2 Apparatus for forming interconnects 有权
标题翻译：用于形成互连的装置
公开(公告)号：US06811658B2
公开(公告)日：2004-11-02
申请号：US09891472
申请日：2001-06-27
申请人： Akihisa Hongo , Naoki Matsuda , Kanji Ohno , Ryoichi Kimizuka
发明人： Akihisa Hongo , Naoki Matsuda , Kanji Ohno , Ryoichi Kimizuka
IPC分类号： C25D1700
CPC分类号： H01L21/76843 , C25F3/02 , C25F7/00 , H01L21/288 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/76838 , H01L21/7684 , H01L21/76849 , H01L21/76864 , H05K3/07 , H05K3/107 , H05K3/108 , H05K2201/0376 , H05K2201/09036
摘要： A method and apparatus for forming interconnects embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method includes providing a substrate having fine recesses formed in the surface, subjecting the surface of the substrate to plating in a plating liquid, and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.
摘要翻译：一种将诸如铜（Cu）的金属嵌入到诸如半导体衬底的衬底的表面上形成的互连的凹槽中的互连的方法和装置。该方法包括提供在该表面上形成有微细凹槽的基板，使基板的表面在电镀液中进行镀覆，以及使形成在基板表面上的镀膜在蚀刻液中进行电解蚀刻。

26. 发明授权

US06716330B2 Electroless plating apparatus and method 有权
公开(公告)号：US06716330B2
公开(公告)日：2004-04-06
申请号：US09983399
申请日：2001-10-24
申请人： Akihisa Hongo , Koji Mishima , Hiroaki Inoue , Norio Kimura , Tsutomu Karimata
发明人： Akihisa Hongo , Koji Mishima , Hiroaki Inoue , Norio Kimura , Tsutomu Karimata
IPC分类号： C25D2112
CPC分类号： H01L21/76843 , C23C18/1619 , C23C18/1669 , C23C18/1678 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： An plating apparatus which can easily form a plated film having more uniform thickness on a surface, to be plate, of a material to be plated. The plating apparatus includes a holding portion having a heating portion for holding a material to be plated in such a state that a surface to be plated faces downward, and a plating bath for introducing an electroless plating liquid having a predetermined temperature into a plating chamber, and holding the electroless plating liquid while allowing the electroless plating liquid to overflow an overflow dam. The material which is by the holding portion, is brought into contact with the plating liquid in the plating bath to plate the material.

27. 发明授权

US06627066B1 Method of measuring the concentration of a leveler in a plating liquid 有权
标题翻译：测量电镀液中矫正剂浓度的方法
公开(公告)号：US06627066B1
公开(公告)日：2003-09-30
申请号：US09830407
申请日：2001-04-27
申请人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： G01N2742
CPC分类号： C25D21/18 , C25D21/12 , C25D21/14
摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译：基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于根据CV或CVS工艺测量电镀液的剥离区域。

28. 发明授权

US06544585B1 Method and apparatus for plating a substrate 有权
标题翻译：电镀基板的方法和装置
公开(公告)号：US06544585B1
公开(公告)日：2003-04-08
申请号：US09145500
申请日：1998-09-02
申请人： Fumio Kuriyama , Akihisa Hongo , Hiroaki Inoue , Tsuyoshi Tokuoka
发明人： Fumio Kuriyama , Akihisa Hongo , Hiroaki Inoue , Tsuyoshi Tokuoka
IPC分类号： B05D512
CPC分类号： H01L21/6715 , H01L21/67144
摘要： A high quality metallic deposit can be produced inside the micro-cavities formed on a surface of a substrate by the present invention. The method involves immersing the substrate in a liquid held in a processing chamber, evacuating the processing chamber so as to remove residual bubbles from the micro-cavities and to degas the liquid within the micro-cavities, and subjecting the liquid to boiling in at least those regions adjacent to the substrate.
摘要翻译：通过本发明，可以在形成在基板的表面上的微孔内产生高质量的金属沉积物。该方法包括将基底浸入保持在处理室中的液体中，抽空处理室以从微孔中除去残余气泡并使微腔内的液体脱气，并至少使液体沸腾那些区域与衬底相邻。

29. 发明申请

US20100136886A1 POLISHING APPARATUS AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：抛光设备和基板加工设备
公开(公告)号：US20100136886A1
公开(公告)日：2010-06-03
申请号：US12699318
申请日：2010-02-03
申请人： Akihisa Hongo , Kenya Ito , Kenji Yamaguchi , Masayuki Nakanishi
发明人： Akihisa Hongo , Kenya Ito , Kenji Yamaguchi , Masayuki Nakanishi
IPC分类号： B24B49/04 , B24B49/12 , B24B21/18 , B24B9/02
CPC分类号： B24B37/02 , B24B9/065 , B24B21/002
摘要： The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing for forming a polishing chamber therein, a rotational table for holding and rotating a substrate, a polishing tape supply mechanism for supplying a polishing tape into the polishing chamber and taking up the polishing tape which has been supplied to the polishing chamber, a polishing head for pressing the polishing tape against a bevel portion of the substrate, a liquid supply for supplying a liquid to a front surface and a rear surface of the substrate, and a regulation mechanism for making an internal pressure of the polishing chamber being set to be lower than an external pressure of the polishing chamber.
摘要翻译：本发明涉及一种用于去除在基板的周边部分产生的表面粗糙度或用于去除形成在基板的周边部分上的膜的抛光装置。抛光装置包括：用于在其中形成抛光室的壳体，用于保持和旋转基板的旋转台;抛光带供给机构，用于将研磨带供给到抛光室中并且吸收已经被供给到抛光的研磨带用于将抛光带压靠在基板的斜面部分上的抛光头，用于将液体供应到基板的前表面和后表面的液体供应源，以及用于使抛光室的内部压力的调节机构被设定为低于抛光室的外部压力。

30. 发明申请

US20090026068A1 Revolution member supporting apparatus and semiconductor substrate processing apparatus 审中-公开
标题翻译：革命会员支持装置和半导体基板处理装置
公开(公告)号：US20090026068A1
公开(公告)日：2009-01-29
申请号：US12232364
申请日：2008-09-16
申请人： Akihisa Hongo , Ichiro Katakabe , Shinya Morisawa
发明人： Akihisa Hongo , Ichiro Katakabe , Shinya Morisawa
IPC分类号： C25D17/06
CPC分类号： H01L21/68728 , B24B37/345 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/06 , H01L21/67046 , H01L21/67051 , H01L21/6715 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67201 , H01L21/67253 , H01L21/67742 , H01L21/67748 , H01L21/67766 , H01L21/68707
摘要： A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member. The holding members revolve around the axis of rotation when the rotatable member rotates and are allowed to swing about their own central axes.
摘要翻译：旋转构件支撑装置保持并旋转诸如半导体晶片的盘形物体（待旋转物体）。旋转构件支撑装置包括围绕旋转轴线旋转的可旋转构件，以及沿着具有与可旋转构件的旋转轴线对应的中心的圆形的多个保持构件。当可旋转构件旋转时，保持构件围绕旋转轴线旋转并且允许其绕其自身的中心轴线摆动。

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