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21. 发明申请

US20140151630A1 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：金属器件外延结构的保护
公开(公告)号：US20140151630A1
公开(公告)日：2014-06-05
申请号：US13693199
申请日：2012-12-04
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L33/04
CPC分类号： H01L33/0079 , B82Y20/00 , H01L33/44 , H01S5/0217 , H01S5/18375 , H01S5/34333
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

22. 发明授权

US08614449B1 Protection for the epitaxial structure of metal devices 有权
标题翻译：保护金属器件的外延结构
公开(公告)号：US08614449B1
公开(公告)日：2013-12-24
申请号：US11548620
申请日：2006-10-11
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L27/15
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

23. 发明授权

US08373195B2 Light-emitting diode lamp with low thermal resistance 有权
标题翻译：具有低热阻的发光二极管灯
公开(公告)号：US08373195B2
公开(公告)日：2013-02-12
申请号：US13324859
申请日：2011-12-13
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/647 , H01L33/486 , H01L33/641 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/00
摘要： A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning the metal plate at the bottom of the light-emitting diode structure. This metal plate may then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively coupled through several heat conduction layers to a large heat sink that may be included in the structure.
摘要翻译：提供了一种具有比传统LED灯具更低热传导路径的发光二极管（LED）结构。对于一些实施例，提供了一种可表面安装的发光二极管结构，其具有沉积在基板上的有源层，所述有源层直接接合到金属板上，所述金属板基本上暴露于低热阻，通过将金属板定位在发光的底部二极管结构。然后将该金属板焊接到包括散热器的印刷电路板（PCB）。对于本发明的一些实施例，金属板通过几个导热层被热和电传导耦合到可以包括在结构中的大散热器。

24. 发明授权

US08143112B1 Method for removing semiconductor street material 有权
标题翻译：去除半导体街道材料的方法
公开(公告)号：US08143112B1
公开(公告)日：2012-03-27
申请号：US12696965
申请日：2010-01-29
申请人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/20
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

25. 发明申请

US20100283065A1 LED DEVICE WITH A LIGHT EXTRACTING ROUGH STRUCTURE AND MANUFACTURING METHODS THEREOF 审中-公开
标题翻译：具有光提取粗糙结构的LED器件及其制造方法
公开(公告)号：US20100283065A1
公开(公告)日：2010-11-11
申请号：US12558476
申请日：2009-09-11
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/54 , H01L2224/45144 , H01L2224/48095 , H01L2933/0091 , H01L2924/00
摘要： The invention relates to a light emitting diode device having a light extracting rough structure. The device includes a leadframe, one or more light emitting diode chips provided on and electrically connected to the leadframe, and a lens configured to encapsulate the one or more light emitting diode chips, the lens having a surface including a micro-roughness structure. The micro-roughness structure of the lens has a roughness between 0.1 μm and 50 μm. The invention also relates to a method of manufacturing a light emitting diode device having a light extracting rough structure.
摘要翻译：本发明涉及具有光提取粗糙结构的发光二极管器件。该装置包括引线框架，提供在引线框架上并电连接到引线框架的一个或多个发光二极管芯片，以及配置成封装一个或多个发光二极管芯片的透镜，所述透镜具有包括微粗糙结构的表面。透镜的微观粗糙度结构的粗糙度在0.1μm和50μm之间。本发明还涉及一种制造具有光提取粗糙结构的发光二极管器件的方法。

26. 发明申请

US20080087875A1 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：金属器件外延结构的保护
公开(公告)号：US20080087875A1
公开(公告)日：2008-04-17
申请号：US11548642
申请日：2006-10-11
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L29/06
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

27. 发明授权

US08912021B2 System and method for fabricating light emitting diode (LED) dice with wavelength conversion layers 有权
标题翻译：用于制造具有波长转换层的发光二极管（LED）裸片的系统和方法
公开(公告)号：US08912021B2
公开(公告)日：2014-12-16
申请号：US13473796
申请日：2012-05-17
申请人： Jui-Kang Yen , De-Shuo Chen
发明人： Jui-Kang Yen , De-Shuo Chen
IPC分类号： H01L21/00 , H01L33/00 , H01L33/50
CPC分类号： H01L33/505 , H01L21/6838 , H01L2933/0041
摘要： A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the adhesiveness of the adhesive layer to facilitate removal of the wavelength conversion layer from the substrate, and an attachment apparatus configured to remove the wavelength conversion layer from the substrate and to attach the wavelength conversion layer to a light emitting diode (LED) die. A method for fabricating light emitting diode (LED) dice includes the steps of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.
摘要翻译：一种用于制造发光二极管（LED）裸片的系统包括：在粘合剂层上的基底上包含的波长转换层，其构造为在暴露于物理能量（例如电磁辐射或热）时具有降低的粘附性。该系统还包括：固化装置，其被配置为降低粘合剂层的粘附性，以便于从基板除去波长转换层;以及附接装置，其被配置为从基板去除波长转换层并将波长转换层附着到发光二极管（LED）裸片。制造发光二极管（LED）模具的方法包括以下步骤：将衬底上的粘合剂层暴露于物理能量以降低粘合剂层的粘附性，从衬底去除波长转换层，以及将波长转换层到发光二极管（LED）模具。

28. 发明申请

US20130065327A1 METHOD AND SYSTEM FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENGTH CONVERSION LAYERS HAVING CONTROLLED COLOR CHARACTERISTICS 有权
标题翻译：用于制造具有控制颜色特性的波长转换层的发光二极管（LED）数位板的方法和系统
公开(公告)号：US20130065327A1
公开(公告)日：2013-03-14
申请号：US13562519
申请日：2012-07-31
申请人： Jui-Kang Yen , Georg Soerensen , Mark Ewing Tuttle
发明人： Jui-Kang Yen , Georg Soerensen , Mark Ewing Tuttle
IPC分类号： H01L33/50
CPC分类号： H01L33/501 , H01L33/0095 , H01L2933/0041
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT).
摘要翻译：制造发光二极管（LED）晶片的方法包括以下步骤：用波长转换材料涂覆透明衬底，连续评估由波长转换材料产生的输出电磁辐射的相关色温（CCT），并比较相关色彩温度（CCT）到目标相关色温（CCT），并且响应于来自评估和比较步骤的反馈来控制涂层步骤以调节相关色温（CCT）以实现目标相关色温（CCT）。一种用于制造发光二极管（LED）裸片的系统包括涂层系统，监测系统和控制系统，其被配置为控制涂层系统以调节透明衬底上的波长转换材料的相关色温（CCT）以实现目标相关色温（CCT）。

29. 发明授权

US08124454B1 Die separation 有权
标题翻译：模具分离
公开(公告)号：US08124454B1
公开(公告)日：2012-02-28
申请号：US11548629
申请日：2006-10-11
申请人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

30. 发明授权

US07863639B2 Light-emitting diode lamp with low thermal resistance 有权
标题翻译：具有低热阻的发光二极管灯
公开(公告)号：US07863639B2
公开(公告)日：2011-01-04
申请号：US11279530
申请日：2006-04-12
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/647 , H01L24/73 , H01L33/486 , H01L33/641 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/00012
摘要： A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. This metal plate can then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively connected through several heat conduction layers to a large heat sink that may be included in the structure.
摘要翻译：提供了一种具有比传统LED灯具更低热传导路径的发光二极管（LED）结构。对于一些实施例，提供了一种可表面安装的发光二极管结构，其具有沉积在金属基板上的有源层，该有源层直接接合到金属板上，该金属板通过将其定位在发光二极管的底部而基本上暴露于低热阻结构体。然后将该金属板焊接到包括散热器的印刷电路板（PCB）。对于本发明的一些实施例，金属板通过几个导热层被热导电地连接到可以包括在结构中的大型散热器。

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