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21. 发明授权

US06255195B1 Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method 有权
标题翻译：用于形成包含平面本征吸气区和由所述方法形成的衬底的键合衬底的方法
公开(公告)号：US06255195B1
公开(公告)日：2001-07-03
申请号：US09255231
申请日：1999-02-22
申请人： Jack H. Linn , William H. Speece , Michael G. Shlepr , George V. Rouse
发明人： Jack H. Linn , William H. Speece , Michael G. Shlepr , George V. Rouse
IPC分类号： H01L2130
CPC分类号： H01L21/3226 , H01L21/2007 , H01L21/76251 , Y10S438/977
摘要： In a method for forming a bonded semiconductor-on-insulator substrate for the fabrication of semiconductor devices and integrated circuits, a surface of a wafer of a monocrystalline semiconductor material is implanted with ions of the semiconductor material a to a selected depth in the wafer to form, adjacent to the surface, an amorphous layer of the semiconductor material. The layer of amorphous semiconductor material extends to a substantially planar zone disposed at substantially the selected depth and comprising the monocrystalline semiconductor material damaged by lattice defects, i.e., end-of-range implant damage. Undamaged material below the selected depth comprises a first layer of the monocrystalline semiconductor material. The wafer is heated under conditions effective to convert the amorphous layer to a second layer of the monocrystalline semiconductor material and to coalesce the zone of damaged monocrystalline semiconductor material, thereby forming a substantially planar intrinsic gettering zone of substantially pure semiconductor material that includes active gettering sites disposed at substantially the selected depth. An insulating bond layer on one surface of a handle wafer is bonded to the surface of the wafer to form a bonded semiconductor-on-insulator substrate comprising a handle wafer, an insulating bond layer, and a device wafer of monocrystalline semiconductor material. The device wafer includes a substantially planar intrinsic gettering zone comprising substantially pure semiconductor material and including active gettering sites. The described bonded substrate is employed in the fabrication of semiconductor devices and integrated circuits.
摘要翻译：在用于形成用于制造半导体器件和集成电路的键合半导体绝缘体衬底的方法中，将单晶半导体材料的晶片的表面注入半导体材料a的离子至晶片中的选定深度，以形成与表面相邻的半导体材料的非晶层。非晶半导体材料层延伸到基本上平坦的区域，其设置在基本上选定的深度处，并且包括被晶格缺陷损坏的单晶半导体材料，即端端植入物损伤。低于所选深度的未损坏的材料包括单晶半导体材料的第一层。在有效地将非晶层转化为单晶半导体材料的第二层并且结合损坏的单晶半导体材料的区域的条件下加热晶片，由此形成基本上平坦的基本上纯的半导体材料的吸杂区，其包括主动吸除位点设置在基本上选定的深度。把手晶片的一个表面上的绝缘结合层结合到晶片的表面，以形成包含处理晶片，绝缘结合层和单晶半导体材料的器件晶片的绝缘体上绝缘体衬底。器件晶片包括基本上平坦的本征吸气区，其包含基本上纯的半导体材料并且包括主动吸气位点。所描述的键合衬底用于制造半导体器件和集成电路。

22. 发明授权

US5849627A Bonded wafer processing with oxidative bonding 失效
标题翻译：具有氧化粘合的粘结晶片加工
公开(公告)号：US5849627A
公开(公告)日：1998-12-15
申请号：US430312
申请日：1995-04-28
申请人： Jack H. Linn , Robert K. Lowry , George V. Rouse , James F. Buller
发明人： Jack H. Linn , Robert K. Lowry , George V. Rouse , James F. Buller
IPC分类号： H01L21/20 , H01L21/316 , H01L21/762 , H01L21/30
CPC分类号： H01L21/2007 , H01L21/31654 , H01L21/76264 , H01L21/76275 , H01L21/76283 , H01L21/76286 , Y10S148/012
摘要： Low temperature wafer bonding using a chemically reacting material between wafers to form a bonded zone to bond two wafers together. Examples include silicon wafers with a silicon-oxidizing bonding liquid which also permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Silicon wafers also may use solid reactants which include deposited layers of metal and polysilicon to form silicide bonded zones. Oxidizers such as nitric acid may be used in the bonding liquid, and a bonding liquid may be used in conjunction with a solid bonding reactant. Dielectric layers on silicon wafers may be used when additional silicon is provided for the bonding reactions. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening and buried resistors.
摘要翻译：使用晶片之间的化学反应材料进行低温晶片接合，以形成将两个晶片结合在一起的结合区域。实例包括具有硅氧化粘合液体的硅晶片，其也允许引入辐射固化掺杂剂和作为粘合液体的组分的电活性掺杂剂。硅晶片还可以使用固体反应物，其包括金属和多晶硅的沉积层以形成硅化物结合区。可以在接合液中使用硝酸等氧化剂，结合液可以与固体键合反应物结合使用。当为粘合反应提供额外的硅时，可以使用硅晶片上的介电层。由这种接合晶片制造的集成电路可以具有掩埋层和辐射硬化和掩埋电阻。

23. 发明授权

US5603779A Bonded wafer and method of fabrication thereof 失效
标题翻译：粘合晶片及其制造方法
公开(公告)号：US5603779A
公开(公告)日：1997-02-18
申请号：US443242
申请日：1995-05-17
申请人： Jack H. Linn , George Bajor , George V. Rouse
发明人： Jack H. Linn , George Bajor , George V. Rouse
IPC分类号： H01L21/20
CPC分类号： H01L21/2007 , Y10S148/012 , Y10S438/974
摘要： A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.
摘要翻译：具有键合结的键合晶片由于在键合结处的氧化物水平低而具有低电阻率。从晶片去除原生氧化物层的等离子体暴露于晶片。等离子体在晶片上形成疏水聚合物密封，在暴露于空气中时抑制随后的天然氧化物生长。将要接合的晶片上的聚合物密封件压在一起，并且将晶片退火以在非氧化环境中形成接合晶片。所形成的键合键主要是硅与硅和硅与碳键。

24. 发明授权

US5569620A Bonded wafer processing with metal silicidation 失效
标题翻译：用金属硅化物粘结晶片加工
公开(公告)号：US5569620A
公开(公告)日：1996-10-29
申请号：US351933
申请日：1994-12-08
申请人： Jack H. Linn , Robert K. Lowry , George V. Rouse , James F. Buller
发明人： Jack H. Linn , Robert K. Lowry , George V. Rouse , James F. Buller
IPC分类号： H01L21/20 , H01L21/762 , H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76264 , H01L21/76275 , H01L21/76283 , H01L21/76286 , Y10S148/012 , Y10S148/147
摘要： Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon-nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers.
摘要翻译：使用硅化物键形成反应的低温硅绝缘体晶片键合。与二氧化硅，金刚石，氮化硅等的介质隔离在沟槽隔离硅岛下产生埋入式电阻。由于接合硅化反应的低温，埋入的电介质可以是诸如金刚石的热敏膜。结合硅化物还在埋入金刚石层和处理晶片之间提供散热层，以获得良好的整体导热性。粘结硅化物也充当扩散阻挡层。

25. 发明授权

US5387555A Bonded wafer processing with metal silicidation 失效
标题翻译：用金属硅化物粘结晶片加工
公开(公告)号：US5387555A
公开(公告)日：1995-02-07
申请号：US939786
申请日：1992-09-03
申请人： Jack H. Linn , Robert K. Lowry , George V. Rouse , James F. Buller
发明人： Jack H. Linn , Robert K. Lowry , George V. Rouse , James F. Buller
IPC分类号： H01L21/20 , H01L21/762 , H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76264 , H01L21/76275 , H01L21/76283 , H01L21/76286 , Y10S148/012 , Y10S148/147
摘要： Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers. The silicide bonding takes place in the presense of a liquid oxidizer such as aqueous solution of HNO.sub.3 and H.sub.2 O.sub.2.
摘要翻译：使用硅化物键形成反应的低温硅绝缘体晶片键合。使用二氧化硅，金刚石，氮化硅等进行介质隔离，在沟槽隔离硅岛下产生掩埋电阻。由于接合硅化反应的低温，埋入的电介质可以是诸如金刚石的热敏膜。结合硅化物还在埋入金刚石层和处理晶片之间提供散热层，以获得良好的整体导热性。粘结硅化物也充当扩散阻挡层。硅化物结合发生在液体氧化剂如HNO 3和H 2 O 2的水溶液的存在之中。

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