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21. 发明授权

US06773980B2 Methods of forming a field emission device 失效
标题翻译：形成场发射装置的方法
公开(公告)号：US06773980B2
公开(公告)日：2004-08-10
申请号：US10334382
申请日：2002-12-30
申请人： Brenda D. Kraus , Richard H. Lane
发明人： Brenda D. Kraus , Richard H. Lane
IPC分类号： H01L218242
CPC分类号： C23C16/303 , H01J9/025 , H01L21/318
摘要： The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a method of depositing an aluminum nitride comprising layer over a semiconductor substrate includes positioning a semiconductor substrate within a chemical vapor deposition reactor. Ammonia and at least one of triethylaluminum and trimethylaluminum are fed to the reactor while the substrate is at a temperature of about 500° C. or less and at a reactor pressure from about 100 mTorr to about 725 Torr effective to deposit a layer comprising aluminum nitride over the substrate at such temperature and reactor pressure. In one aspect, such layer is utilized as a cell dielectric layer in DRAM circuitry. In one aspect, such layer is deposited over emitters of a field emission display. The invention contemplates DRAM and field emission devices utilizing such layer and alternate layers.
摘要翻译：本发明是一种在半导体衬底上沉积氮化铝包覆层的方法，形成DRAM电路的方法，DRAM电路，形成场发射器件的方法和场致发射器件。在一个方面，一种在半导体衬底上沉积包含氮化铝的层的方法包括将半导体衬底定位在化学气相沉积反应器内。将氨和三乙基铝和三甲基铝中的至少一种进料到反应器中，同时基材处于约500℃或更低的温度下，并且反应器压力为约100mTorr至约725乇，有效沉积包含氮化铝在这样的温度和反应器压力下在基材上。在一个方面，这种层用作DRAM电路中的单元电介质层。在一个方面，这种层沉积在场发射显示器的发射器上。本发明考虑了利用这种层和交替层的DRAM和场致发射器件。

22. 发明授权

US06764895B2 Process for fabricating RuSixOy-containing adhesion layers 失效
标题翻译：制备含有RuSixOy的粘合层的方法
公开(公告)号：US06764895B2
公开(公告)日：2004-07-20
申请号：US10158978
申请日：2002-05-30
申请人： Eugene P. Marsh , Brenda D. Kraus
发明人： Eugene P. Marsh , Brenda D. Kraus
IPC分类号： H01L21824
CPC分类号： H01L28/75 , H01L21/76843 , H01L28/55
摘要： A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSixOy, where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSixOy by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSixOy from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSixOy.
摘要翻译：一种用于制造集成电路的方法包括提供具有表面的基片组件。在表面的至少一部分上形成粘合层。粘合层由RuSixOy形成，其中x和y在约0.01至约10的范围内。粘合层可以通过通过化学气相沉积，原子层沉积或物理气相沉积沉积RuSixOy而形成，或者粘合层可以通过在含硅区域上形成钌或氧化钌层并进行退火以从相邻的含硅区域的钌和硅层形成RuSixOy。电容器电极，互连或其他结构可以用这种粘合层形成。半导体结构和器件可以形成为包括由RuSixOy形成的粘附层。

23. 发明授权

US06740252B2 Ruthenium silicide wet etch 失效
标题翻译：钌硅化物湿蚀刻
公开(公告)号：US06740252B2
公开(公告)日：2004-05-25
申请号：US10165801
申请日：2002-06-07
申请人： Brenda D. Kraus , Michael T. Andreas
发明人： Brenda D. Kraus , Michael T. Andreas
IPC分类号： C09K1300
CPC分类号： H01L28/65 , C09K13/00 , C09K13/08 , H01L21/32134
摘要： A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed.
摘要翻译：一种从基材表面除去钌化硅的方法，其包括将所述钌化硅表面暴露于含有氯和氟的化学品的溶液中。特别地，所述溶液被设计成与所述硅化矽膜反应，形成水溶性反应产物。

24. 发明授权

US06737317B2 Method of manufacturing a capacitor having RuSixOy-containing adhesion layers 失效
标题翻译：制造具有含RuSxOy的粘合层的电容器的方法
公开(公告)号：US06737317B2
公开(公告)日：2004-05-18
申请号：US10075574
申请日：2002-02-12
申请人： Eugene P. Marsh , Brenda D. Kraus
发明人： Eugene P. Marsh , Brenda D. Kraus
IPC分类号： H01L218242
CPC分类号： H01L28/75 , H01L21/76843 , H01L28/55
摘要： A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSixOy, where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSixOy by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSixOy from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSixOy.
摘要翻译：一种用于制造集成电路的方法包括提供具有表面的基片组件。在表面的至少一部分上形成粘合层。粘合层由RuSixOy形成，其中x和y在约0.01至约10的范围内。粘合层可以通过通过化学气相沉积，原子层沉积或物理气相沉积沉积RuSixOy而形成，或者粘合层可以通过在含硅区域上形成钌或氧化钌层并进行退火以从相邻的含硅区域的钌和硅层形成RuSixOy。电容器电极，互连或其他结构可以用这种粘合层形成。半导体结构和器件可以形成为包括由RuSixOy形成的粘附层。

25. 发明授权

US06610568B2 Process for fabricating RuSixOy-containing adhesion layers 失效
公开(公告)号：US06610568B2
公开(公告)日：2003-08-26
申请号：US09935490
申请日：2001-08-23
申请人： Eugene P. Marsh , Brenda D. Kraus
发明人： Eugene P. Marsh , Brenda D. Kraus
IPC分类号： H01C218242
CPC分类号： H01L28/75 , H01L21/76843 , H01L28/55
摘要： A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSixOy, where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSixOy by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSixOy from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSixOy.

26. 发明授权

US07923070B2 Atomic layer deposition method of forming conductive metal nitride-comprising layers 有权
标题翻译：形成导电金属氮化物层的原子层沉积方法
公开(公告)号：US07923070B2
公开(公告)日：2011-04-12
申请号：US11497692
申请日：2006-07-31
申请人： Brenda D. Kraus , Eugene P. Marsh
发明人： Brenda D. Kraus , Eugene P. Marsh
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/45542 , C23C16/34
摘要： This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The first species monolayer comprises organic groups. The chemisorbed first species is contacted with a second precursor plasma effective to react with the first species monolayer to remove organic groups from the first species monolayer. The chemisorbing and contacting are successively repeated under conditions effective to form a layer of material on the substrate comprising a conductive metal nitride.
摘要翻译：本发明包括形成包含层的导电金属氮化物的原子层沉积方法。在一个实施方案中，形成导电金属氮化物包括层的原子层沉积方法包括将衬底定位在沉积室内。化学吸附第一物质以从包含酰氨基金属有机化合物或亚氨基金属有机化合物中的至少一种的气态第一前体在基底上形成第一物质单层。第一种物质单层包括有机基团。化学吸附的第一物质与第二前体血浆接触，其有效地与第一物质单层反应以从第一物质单层除去有机基团。在有效地在包含导电金属氮化物的衬底上形成材料层的条件下连续重复化学吸附和接触。

27. 发明授权

US07378129B2 Atomic layer deposition methods of forming conductive metal nitride comprising layers 有权
标题翻译：形成包含层的导电金属氮化物的原子层沉积方法
公开(公告)号：US07378129B2
公开(公告)日：2008-05-27
申请号：US10643680
申请日：2003-08-18
申请人： Brenda D. Kraus , Eugene P. Marsh
发明人： Brenda D. Kraus , Eugene P. Marsh
IPC分类号： C23C16/00
CPC分类号： C23C16/45542 , C23C16/34
摘要： This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The first species monolayer comprises organic groups. The chemisorbed first species is contacted with a second precursor plasma effective to react with the first species monolayer to remove organic groups from the first species monolayer. The chemisorbing and contacting are successively repeated under conditions effective to form a layer of material on the substrate comprising a conductive metal nitride.
摘要翻译：本发明包括形成包含层的导电金属氮化物的原子层沉积方法。在一个实施方案中，形成导电金属氮化物包括层的原子层沉积方法包括将衬底定位在沉积室内。化学吸附第一物质以从包含酰氨基金属有机化合物或亚氨基金属有机化合物中的至少一种的气态第一前体在基底上形成第一物质单层。第一种物质单层包括有机基团。化学吸附的第一物质与第二前体血浆接触，其有效地与第一物质单层反应以从第一物质单层除去有机基团。在有效地在包含导电金属氮化物的衬底上形成材料层的条件下连续重复化学吸附和接触。

28. 发明授权

US06894306B2 Field emission device having a covering comprising aluminum nitride 失效
标题翻译：具有包括氮化铝的覆盖物的场致发射器件
公开(公告)号：US06894306B2
公开(公告)日：2005-05-17
申请号：US10217617
申请日：2002-08-12
申请人： Brenda D. Kraus , Richard H. Lane
发明人： Brenda D. Kraus , Richard H. Lane
IPC分类号： C23C16/30 , H01J9/02 , H01L21/318 , H01L29/06
CPC分类号： C23C16/303 , H01J9/025 , H01L21/318
摘要： The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a method of depositing an aluminum nitride comprising layer over a semiconductor substrate includes positioning a semiconductor substrate within a chemical vapor deposition reactor. Ammonia and at least one of triethylaluminum and trimethylaluminum are fed to the reactor while the substrate is at a temperature of about 500° C. or less and at a reactor pressure from about 100 mTorr to about 725 Torr effective to deposit a layer comprising aluminum nitride over the substrate at such temperature and reactor pressure. In one aspect, such layer is utilized as a cell dielectric layer in DRAM circuitry. In one aspect, such layer is deposited over emitters of a field emission display. The invention contemplates DRAM and field emission devices utilizing such layer and alternate layers.
摘要翻译：本发明是一种在半导体衬底上沉积氮化铝包覆层的方法，形成DRAM电路的方法，DRAM电路，形成场发射器件的方法和场致发射器件。在一个方面，一种在半导体衬底上沉积包含氮化铝的层的方法包括将半导体衬底定位在化学气相沉积反应器内。将氨和三乙基铝和三甲基铝中的至少一种进料到反应器中，同时基材处于约500℃或更低的温度下，并且在约100mTorr至约725乇的反应器压力下有效沉积包含氮化铝在这样的温度和反应器压力下在基材上。在一个方面，这种层用作DRAM电路中的单元电介质层。在一个方面，这种层沉积在场发射显示器的发射器上。本发明考虑了利用这种层和交替层的DRAM和场致发射器件。

29. 发明授权

US06812990B1 Method for making sol gel spacers for flat panel displays 失效
标题翻译：制造平板显示器用溶胶凝胶垫片的方法
公开(公告)号：US06812990B1
公开(公告)日：2004-11-02
申请号：US09560260
申请日：2000-04-26
申请人： James J. Hofmann , Brian A. Vaartstra , Brenda D. Kraus , Donald L. Westmoreland
发明人： James J. Hofmann , Brian A. Vaartstra , Brenda D. Kraus , Donald L. Westmoreland
IPC分类号： G02F11339
CPC分类号： G03F7/0017 , B29C33/3857 , G02F1/1339 , G02F1/13394 , H01J2211/36 , Y10T428/1059
摘要： The present invention describes thick film photolithographic molds, methods of making thick film photolithographic molds, and methods of using thick film photolithographic molds to form spacers on a substrate. The thick film photolithographic molds preferably comprise an epoxy bisphenol A novolac resin. The present invention also describes sol gel spacers comprising sodium silicates and potassium silicates. The thick film photolithographic molds and sol gel spacers of the present invention can be used in flat panel displays, such as field emission displays and plasma displays.
摘要翻译：本发明描述了厚膜光刻模具，制备厚膜光刻模具的方法，以及使用厚膜光刻模具在衬底上形成间隔物的方法。厚膜光刻模优选包含环氧双酚A酚醛清漆树脂。本发明还描述了包含硅酸钠和硅酸钾的溶胶凝胶间隔物。本发明的厚膜光刻模和溶胶凝胶间隔物可用于诸如场发射显示器和等离子体显示器的平板显示器中。

30. 发明授权

US06800937B2 RuSixOy-containing adhesion layers and process for fabricating the same 失效
标题翻译：含RuSixOy的粘附层
公开(公告)号：US06800937B2
公开(公告)日：2004-10-05
申请号：US10075863
申请日：2002-02-12
申请人： Eugene P. Marsh , Brenda D. Kraus
发明人： Eugene P. Marsh , Brenda D. Kraus
IPC分类号： H01L2348
CPC分类号： H01L28/75 , H01L21/76843 , H01L28/55
摘要： Integrated circuit structures having a substrate assembly that includes at least one active device and a silicon-containing region are disclosed. The integrated circuit structure includes an interconnect formed relative to the at least one active device and the silicon-containing region. The interconnect includes an adhesion layer on the silicon-containing region. The adhesion layer is formed of RuSixOy, where x and y are in a range of about 0.01 to about 10.
摘要翻译：公开了具有包括至少一个有源器件和含硅区域的衬底组件的集成电路结构。集成电路结构包括相对于至少一个有源器件和含硅区域形成的互连。互连包括在含硅区域上的粘合层。粘合层由RuSixOy形成，其中x和y在约0.01至约10的范围内。

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