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21. 发明授权

US08450140B2 Method for large-scale manufacturing of photovoltaic cells for a converter panel and photovoltaic converter panel 失效
标题翻译：用于大规模生产转换器面板和光伏转换器面板的光伏电池的方法
公开(公告)号：US08450140B2
公开(公告)日：2013-05-28
申请号：US12999236
申请日：2008-06-18
申请人： Daniel Lepori , Tobias Roschek , Ulrich Kroll
发明人： Daniel Lepori , Tobias Roschek , Ulrich Kroll
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L31/076 , H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.
摘要翻译：为了改善在具有本征硅化合物的微晶层的光伏电池的光伏电池和各个转换器面板的大规模工业制造中，至少一个相邻的掺杂硅材料层被认为是非晶层。

22. 发明申请

US20110108109A1 METHOD FOR LARGE-SCALE MANUFACTURING OF PHOTOVOLTAIC CELLS FOR A CONVERTER PANEL AND PHOTOVOLTAIC CONVERTER PANEL 失效
标题翻译：用于转换器面板和光电转换器面板的光电池的大规模制造方法
公开(公告)号：US20110108109A1
公开(公告)日：2011-05-12
申请号：US12999236
申请日：2008-06-18
申请人： Ulrich Kroll , Daniel Lepori , Tobias Roschek
发明人： Ulrich Kroll , Daniel Lepori , Tobias Roschek
IPC分类号： H01L31/0368 , H01L31/18
CPC分类号： H01L31/076 , H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.
摘要翻译：为了改善在具有本征硅化合物的微晶层的光伏电池的光伏电池和各个转换器面板的大规模工业制造中，至少一个相邻的掺杂硅材料层被认为是非晶层。

23. 发明授权

US07504279B2 Method for producing semi-conducting devices and devices obtained with this method 失效
标题翻译：用该方法制造半导体器件和器件的方法
公开(公告)号：US07504279B2
公开(公告)日：2009-03-17
申请号：US11947245
申请日：2007-11-29
申请人： Ulrich Kroll , Cedric Bucher , Jacques Schmitt , Markus Poppeller , Christoph Hollenstein , Juliette Ballutaud , Alan Howling
发明人： Ulrich Kroll , Cedric Bucher , Jacques Schmitt , Markus Poppeller , Christoph Hollenstein , Juliette Ballutaud , Alan Howling
IPC分类号： H01L21/20
CPC分类号： H01L21/0242 , H01L21/02491 , H01L21/02529 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2205 , H01L31/0288 , H01L31/075 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
摘要翻译：半导体器件具有掺杂有掺杂剂的至少一层和在单个反应室中沉积在掺杂层上的另一种类型的层。用于避免掺杂剂污染另一层的操作分离沉积每个层的步骤。

24. 发明授权

US06309906B1 Photovoltaic cell and method of producing that cell 失效
标题翻译：光伏电池及其生产方法
公开(公告)号：US06309906B1
公开(公告)日：2001-10-30
申请号：US09101117
申请日：1998-06-30
申请人： Johann Meier , Ulrich Kroll
发明人： Johann Meier , Ulrich Kroll
IPC分类号： H01L3120
CPC分类号： H01L31/076 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L29/78675 , H01L29/78678 , H01L31/03529 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes a mechanism (23) for extracting gas from the chamber (12) and a mechanism (18) for supplying gas. The device also comprises a mechanism for purification (31) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (12), purifying the gases using purification a mechanism (31), introducing these purified gases into the chamber (12), then creating a plasma between the electrodes (13, 14). A film of intrinsic microcrystalline silicon in then deposited on the substrate.
摘要翻译：装置（10）包括一个包含两个电极（13,14）的沉积室（12），其中一个电极包括一个用于衬底（17）的支座（16），并接地，另一个连接到一个电力射频发生器（15）。该装置包括用于从腔室（12）中提取气体的机构（23）和用于供应气体的机构（18）。该装置还包括用于净化（31）引入室中的气体的机构，这些机构被布置为减少沉积气体中包含的氧原子数，这种气体由硅烷，氢和/ 或氩气。该方法包括在沉积室（12）中产生真空，通过纯化机构（31）纯化气体，将这些纯化气体引入室（12），然后在电极（13,14）之间产生等离子体。然后将沉积在衬底上的本征微晶硅膜。

25. 发明申请

US20110049102A1 PLASMA TREATMENT APPARATUS AND METHOD FOR PLASMA-ASSISTED TREATMENT OF SUBSTRATES 有权
标题翻译：等离子体处理设备等离子体辅助处理基板的方法
公开(公告)号：US20110049102A1
公开(公告)日：2011-03-03
申请号：US12989967
申请日：2009-04-30
申请人： Ulrich Kroll , Boris Legradic
发明人： Ulrich Kroll , Boris Legradic
IPC分类号： H05H1/48 , C23C16/513 , B44C1/22 , C23F1/08 , B23K10/00 , C23C16/50
CPC分类号： H01J37/32357 , H01J37/32091 , H01J37/32541 , H01J2237/0206
摘要： A remote plasma source comprises a first plate-like electrode (7s) and a second plate-like electrode (7b) which are arranged in parallelism and mutually electrically DC isolated. The two electrodes (7s, 7b) are operationally connected to an Rf generator (11). The first electrode (7s) has a surface which is freely exposed to a substrate holder (3) and has a pattern of through-openings (19) distributed along its surface extent.
摘要翻译：远程等离子体源包括平行排列并相互电隔离的第一板状电极（7s）和第二板状电极（7b）。两个电极（7s，7b）可操作地连接到Rf发生器（11）。第一电极（7s）具有自由暴露于衬底保持器（3）的表面，并且具有沿其表面范围分布的通孔（19）的图案。

26. 发明申请

US20080076237A1 METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD 失效
标题翻译：用于生产半导体器件的方法和用该方法获得的器件
公开(公告)号：US20080076237A1
公开(公告)日：2008-03-27
申请号：US11947245
申请日：2007-11-29
申请人： Ulrich Kroll , Cedric Bucher , Jacques Schmitt , Markus Poppeller , Christoph Hollenstein , Juliette Ballutaud , Alan Howling
发明人： Ulrich Kroll , Cedric Bucher , Jacques Schmitt , Markus Poppeller , Christoph Hollenstein , Juliette Ballutaud , Alan Howling
IPC分类号： H01L21/38
CPC分类号： H01L21/0242 , H01L21/02491 , H01L21/02529 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2205 , H01L31/0288 , H01L31/075 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
摘要翻译：半导体器件具有掺杂有掺杂剂的至少一层和在单个反应室中沉积在掺杂层上的另一种类型的层。用于避免掺杂剂污染另一层的操作分离沉积每个层的步骤。

27. 发明授权

US07344909B2 Method for producing semi-conducting devices and devices obtained with this method 失效
标题翻译：用该方法制造半导体器件和器件的方法
公开(公告)号：US07344909B2
公开(公告)日：2008-03-18
申请号：US10691102
申请日：2003-10-22
申请人： Ulrich Kroll , Cédric Bucher , Jacques Schmitt , Markus Poppeller , Christoph Hollenstein , Juliette Ballutaud , Alan Howling
发明人： Ulrich Kroll , Cédric Bucher , Jacques Schmitt , Markus Poppeller , Christoph Hollenstein , Juliette Ballutaud , Alan Howling
IPC分类号： H01L21/20
CPC分类号： H01L21/0242 , H01L21/02491 , H01L21/02529 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2205 , H01L31/0288 , H01L31/075 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
摘要翻译：半导体器件具有掺杂有掺杂剂的至少一层和在单个反应室中沉积在掺杂层上的另一种类型的层。用于避免掺杂剂污染另一层的操作分离沉积每个层的步骤。

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