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21. 发明授权

US09338871B2 Feedforward temperature control for plasma processing apparatus 有权
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：US09338871B2
公开(公告)日：2016-05-10
申请号：US12905624
申请日：2010-10-15
申请人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
发明人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
IPC分类号： G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23F1/00 , H05H1/00 , H01J37/32
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

22. 发明申请

US20120048467A1 COMPONENT TEMPERATURE CONTROL BY COOLANT FLOW CONTROL AND HEATER DUTY CYCLE CONTROL 有权
标题翻译：通过冷却液流量控制和加热器占空比控制的组件温度控制
公开(公告)号：US20120048467A1
公开(公告)日：2012-03-01
申请号：US13040149
申请日：2011-03-03
申请人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
发明人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
IPC分类号： C23F1/08 , F28F27/00 , G05D7/06 , G05D23/19 , B05C11/00 , C23C16/52
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

23. 发明授权

US06677712B2 Gas distribution plate electrode for a plasma receptor 有权
标题翻译：用于等离子体受体的气体分布板电极
公开(公告)号：US06677712B2
公开(公告)日：2004-01-13
申请号：US10442386
申请日：2003-05-20
申请人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
发明人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
IPC分类号： H01J724
CPC分类号： H01J37/3244
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
摘要翻译：本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管背板，后板和前板结合在一起并形成组件。组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径至少一个孔的流速。此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的，与孔对齐。

24. 发明授权

US06500299B1 Chamber having improved gas feed-through and method 失效
标题翻译：具有改进气体馈通和方法的腔室
公开(公告)号：US06500299B1
公开(公告)日：2002-12-31
申请号：US09360351
申请日：1999-07-22
申请人： Richard R. Mett , Hamid Noorbakhsh , Robert D. Greenway
发明人： Richard R. Mett , Hamid Noorbakhsh , Robert D. Greenway
IPC分类号： H05H100
CPC分类号： H01J37/3244 , C23C16/4402 , C23C16/455
摘要： A gas feed-through 150 to provide gas to a plasma chamber 10, comprises a dielectric insert 155 having a passage 160 that allows the gas to be flowed therethrough, and a electrically conducting cup 165 around a portion of the passage. The electrically conducting cup 165 is shaped to reduce plasma formation in the gas feed-through 150.
摘要翻译：用于向等离子体室10提供气体的气体馈通件150包括具有允许气体流过其中的通道160的电介质插入件155和围绕通道的一部分的导电杯165。导电杯165成形为减少气体馈通150中的等离子体形成。

25. 发明授权

US06364957B1 Support assembly with thermal expansion compensation 失效
标题翻译：支撑组件采用热膨胀补偿
公开(公告)号：US06364957B1
公开(公告)日：2002-04-02
申请号：US09498795
申请日：2000-02-08
申请人： Gerhard M. Schneider , Hamid Noorbakhsh , Bryan Pu , Kaushik Vaidya , Brad Leroy Mays , Hung Dao , Evans Lee , Hongging Shan
发明人： Gerhard M. Schneider , Hamid Noorbakhsh , Bryan Pu , Kaushik Vaidya , Brad Leroy Mays , Hung Dao , Evans Lee , Hongging Shan
IPC分类号： C23C1600
CPC分类号： H01L21/67103 , C23C16/4585 , H01J37/32082 , H01J2237/2001
摘要： A substrate support assembly 30 comprises a substrate support 38 and a collar 130 which may comprise at least one slit 150. The slit allows for thermal expansion compensation in the support assembly 30. The collar 130 may, for example, protect the dielectric 45 from erosion in a process chamber 25. In one version, the collar 130 comprises a clamping ring 200 on the dielectric 45.
摘要翻译：衬底支撑组件30包括衬底支撑件38和可包括至少一个狭缝150的套环130.狭缝允许在支撑组件30中进行热膨胀补偿。套环130可以例如保护电介质45免受侵蚀在一个版本中，套环130包括在电介质45上的夹紧环200。

26. 发明授权

US08880227B2 Component temperature control by coolant flow control and heater duty cycle control 有权
标题翻译：组件温度控制由冷却液流量控制和加热器占空比控制
公开(公告)号：US08880227B2
公开(公告)日：2014-11-04
申请号：US13040149
申请日：2011-03-03
申请人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
发明人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
IPC分类号： G06F19/00 , H01J37/32 , H01L21/67
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

27. 发明申请

US20050173569A1 Gas distribution showerhead for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配喷头
公开(公告)号：US20050173569A1
公开(公告)日：2005-08-11
申请号：US10772787
申请日：2004-02-05
申请人： Hamid Noorbakhsh , James Carducci , Jennifer Sun , Larry Elizaga
发明人： Hamid Noorbakhsh , James Carducci , Jennifer Sun , Larry Elizaga
IPC分类号： A01G27/00 , B05B5/00 , C23C16/455 , F23D11/32
CPC分类号： C23C16/45565
摘要： We have developed a gas distribution showerhead assembly, for use in a semiconductor processing chamber, which can be easily cleaned, with minimal chamber downtime. The gas distribution showerhead assembly includes an electrode having openings therethrough, and a gas distribution plate which includes a plurality of through-holes for delivering processing gases into the semiconductor processing chamber. The gas distribution plate is bonded to a first, lower major surface of the electrode. A removable insert which fits into an opening in the electrode through which gas flows. Spacing between surfaces of the removable insert and surfaces of the electrode is adequate to permit gas flow, but inadequate for plasma ignition within the opening. The removable insert can be easily removed during cleaning of the gas distribution showerhead, permitting the holes in the gas distribution plate to be easily accessed from both sides of the gas distribution plate.
摘要翻译：我们开发了一种用于半导体处理室的气体分配喷头组件，可以轻松清洁，并具有最小的室停机时间。气体分配喷头组件包括具有开口的电极，以及气体分配板，其包括用于将处理气体输送到半导体处理室中的多个通孔。气体分配板结合到电极的第一下表面。可拆卸的插入件，其装配在气体流过的电极的开口中。可拆卸插入件的表面与电极表面之间的间距足以允许气体流动，但不足以在开口内等离子体点火。在清洁气体分配喷头时可以容易地移除可移除的插入物，从而容易从气体分配板的两侧接近气体分配板中的孔。

28. 发明申请

US20050016465A1 Electrostatic chuck having electrode with rounded edge 审中-公开
标题翻译：具有圆形边缘电极的静电吸盘
公开(公告)号：US20050016465A1
公开(公告)日：2005-01-27
申请号：US10626156
申请日：2003-07-23
申请人： Kartik Ramaswamy , Jon McChesney , Ananda Kumar , Hamid Noorbakhsh
发明人： Kartik Ramaswamy , Jon McChesney , Ananda Kumar , Hamid Noorbakhsh
IPC分类号： H01L21/68 , H01L21/683 , H02N13/00 , C23C16/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck provides reduced electric field effects about its peripheral edge. In one version, the chuck comprises a dielectric covering an electrode having a perimeter and a wire loop extending about the perimeter, the wire loop having a radially outwardly facing surface that is substantially rounded. Alternatively, the electrode may have a central planar portion comprising a top surface and a bottom surface, and a peripheral arcuate portion having a tip with a curvature length of at least about π/8 radians between a normal to the top surface of the central planar portion and a normal to the upper surface of the tip. The electrostatic chuck is used to hold a substrate in a process chamber of a substrate processing apparatus.
摘要翻译：静电吸盘可以减少围绕其外围边缘的电场效应。在一个版本中，卡盘包括覆盖具有周边的电极的电介质和围绕周边延伸的导线环，所述导线环具有基本上圆形的径向向外的表面。或者，电极可以具有包括顶表面和底表面的中心平面部分，以及周边弓形部分，其具有尖端，该尖端具有在中心平面的顶表面之间的法线之间的至少约π/ 8弧度的曲率长度并且与尖端的上表面垂直。静电卡盘用于将基板保持在基板处理装置的处理室中。

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