专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08084344B2 Methods of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08084344B2
公开(公告)日：2011-12-27
申请号：US12292195
申请日：2008-11-13
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76897 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L29/6653
摘要： A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
摘要翻译：提供了制造半导体器件的接触插塞的方法，该方法包括在衬底上形成栅极图案，形成覆盖图案的上表面和侧壁的封盖图案，在衬底上形成层间绝缘层，如层间绝缘层暴露封盖图案的上表面，并且去除封盖图案和层间绝缘层的一部分，使得封盖图案的上表面被平坦化。

22. 发明申请

US20100127398A1 Wiring structure of a semiconductor device 审中-公开
标题翻译：半导体器件的接线结构
公开(公告)号：US20100127398A1
公开(公告)日：2010-05-27
申请号：US12592042
申请日：2009-11-18
申请人： Young-Hoo Kim , Chang-Ki Hong , Jae-Dong Lee
发明人： Young-Hoo Kim , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L23/498
CPC分类号： H01L21/76831 , H01L21/76885 , H01L27/10855 , H01L27/10888
摘要： In a wiring structure of a semiconductor device and a method of manufacturing the same, a wiring structure includes a contact pad, a contact plug, a spacer and an insulation interlayer pattern. The contact pad is electrically connected to a contact region of a substrate. The contact plug is provided on the contact pad and is electrically connected to the contact pad. The spacer faces an upper side surface of the contact pad and sidewalls of the contact plug. The insulation interlayer pattern has an opening, the contact plug and the spacer being provided in the opening. The spacer of the wiring structure may prevent the contact pad from being damaged by a cleaning solution while forming a contact plug to be connected to a capacitor.
摘要翻译：在半导体器件的布线结构及其制造方法中，布线结构包括接触焊盘，接触插塞，间隔物和绝缘夹层图案。接触垫电连接到基板的接触区域。接触插头设置在接触垫上并且电连接到接触垫。隔离物面向接触垫的上侧表面和接触插塞的侧壁。绝缘夹层图案具有开口，接触插塞和间隔件设置在开口中。布线结构的间隔件可以防止接触垫在形成要连接到电容器的接触插塞时被清洁溶液损坏。

23. 发明授权

US07718535B2 Slurry compositions and CMP methods using the same 有权
标题翻译：浆料组合物和使用其的CMP方法
公开(公告)号：US07718535B2
公开(公告)日：2010-05-18
申请号：US11984399
申请日：2007-11-16
申请人： Jaekwang Choi , Jae-Dong Lee , Chang-Ki Hong
发明人： Jaekwang Choi , Jae-Dong Lee , Chang-Ki Hong
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/7684
摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.
摘要翻译：提供适用于涉及多晶硅层的化学机械抛光（CMP）的工艺的新的浆料组合物的本发明的示例性实施方案。浆料组合物包括一种或多种非离子聚合物表面活性剂，其将在暴露的多晶硅表面上选择性地形成钝化层，以便抑制相对于氧化硅和氮化硅的多晶硅去除速率并提高抛光的基材的平面度。示例性的表面活性剂包括环氧乙烷（EO）和环氧丙烷（PO）嵌段共聚物的烷基和芳基醇，并且可以以高达约5重量％的量存在于浆料组合物中，尽管更小的浓度可能是有效的。其它浆料添加剂可以包括粘度调节剂，pH调节剂，分散剂，螯合剂和适于改变氮化硅和氧化硅的相对去除速率的胺或亚胺表面活性剂。

24. 发明授权

US07440977B2 Recovery method using extendible hashing-based cluster logs in shared-nothing spatial database cluster 有权
标题翻译：在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法
公开(公告)号：US07440977B2
公开(公告)日：2008-10-21
申请号：US11157885
申请日：2005-06-20
申请人： Hae-Young Bae , Jae-Dong Lee , Young-Hwan Oh , Gyoung-Bae Kim , Myoung-Keun Kim , Soon-Young Park , Ho-Seok Kim , Yong-Il Jang
发明人： Hae-Young Bae , Jae-Dong Lee , Young-Hwan Oh , Gyoung-Bae Kim , Myoung-Keun Kim , Soon-Young Park , Ho-Seok Kim , Yong-Il Jang
IPC分类号： G06F17/30
CPC分类号： G06F11/1658 , G06F11/2048 , Y10S707/99931 , Y10S707/99953
摘要： The present invention provides a recovery method using extendible hashing-based cluster logs in a shared-nothing spatial database cluster, which eliminates the duplication of cluster logs required for cluster recovery in a shared-nothing database cluster, so that recovery time is decreased, thus allowing the shared-nothing spatial database cluster system to continuously provide stable service. In the recovery method, if a failure occurs in a predetermined node, a second node in a group, including the node, records cluster logs in main memory on the basis of extendible hashing. If the node that has failed recovers itself using a local log, the second node in the group transmits cluster logs in packets to a recovery node that is the failed node. If the recovery node reflects the received cluster logs and maintains consistency with other nodes in the group, the recovery node resumes normal service.
摘要翻译：本发明提供了一种在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法，其消除了在无共享数据库集群中集群恢复所需的集群日志的重复，从而减少了恢复时间使无共享的空间数据库集群系统不断提供稳定的服务。在恢复方法中，如果在预定节点中发生故障，则包括该节点在内的组中的第二节点基于可扩展哈希在主存储器中记录集群日志。如果失败的节点使用本地日志恢复自身，则该组中的第二个节点将分组中的群集日志传输到作为故障节点的恢复节点。如果恢复节点反映接收的群集日志并维护与组中其他节点的一致性，则恢复节点恢复正常服务。

25. 发明授权

US07244649B2 Method of manufacturing a capacitor having improved capacitance and method of manufacturing a semiconductor device including the capacitor 失效
标题翻译：制造具有改善电容的电容器的方法和制造包括该电容器的半导体器件的方法
公开(公告)号：US07244649B2
公开(公告)日：2007-07-17
申请号：US11007443
申请日：2004-12-09
申请人： Jae-Dong Lee , Chang-Ki Hong , Young-Rae Park
发明人： Jae-Dong Lee , Chang-Ki Hong , Young-Rae Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication.
摘要翻译：公开了一种制造电容器的方法。使用蚀刻停止层或抛光停止层来保护电容器的存储电极在其制造期间被化学机械抛光工艺或回蚀工艺损坏。

26. 发明申请

US20060037942A1 Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry 审中-公开
标题翻译：使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成电容器表面的方法
公开(公告)号：US20060037942A1
公开(公告)日：2006-02-23
申请号：US11170061
申请日：2005-06-30
申请人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
发明人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： C03C19/00 , C03C2218/328 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.
摘要翻译：使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成电容器表面的方法。浆料可以包括研磨剂，氧化剂和至少一种pH控制剂以控制浆料的pH。

27. 发明申请

US20050145602A1 Test patterns and methods of controlling CMP process using the same 失效
公开(公告)号：US20050145602A1
公开(公告)日：2005-07-07
申请号：US11055505
申请日：2005-02-10
申请人： Jeong-Heon Park , Bo-Un Yoon , Jae-Dong Lee
发明人： Jeong-Heon Park , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： H01L21/66 , C03C25/68 , C23F1/00 , G01R31/26 , H01L21/4763 , H01L23/544 , H01L23/58
CPC分类号： H01L22/32 , H01L22/34
摘要： A test pattern and a method of controlling a CMP using the same are provided. The test pattern is disposed on a monitoring region of a semiconductor substrate having a main region and a monitoring region. The test pattern includes a planar region and a pattern region. The method comprises setting a correlation between a step difference of a test pattern and an etched thickness of a main pattern, then applying the CMP to a semiconductor substrate having the test pattern and the main pattern for a predetermined time. The step difference of the test pattern is measured and the etched thickness of the main pattern, which corresponds to the step difference of the test pattern, is determined from the correlation. A polishing time is corrected by comparing the determined etched thickness of the main pattern with a reference value, and the corrected polishing time is applied to a subsequent lot or subsequent substrate.

28. 发明授权

US08048808B2 Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same 有权
标题翻译：用于抛光金属的浆料组合物，抛光金属物体的方法和使用其形成金属布线的方法
公开(公告)号：US08048808B2
公开(公告)日：2011-11-01
申请号：US12213941
申请日：2008-06-26
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： H01L21/302
CPC分类号： C23F3/00 , C09G1/02
摘要： A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3−) and a sulfate ion (OSO3−), and an acidic aqueous solution.
摘要翻译：用于抛光金属的浆料组合物包括聚合物抛光促进剂，所述聚合物抛光促进剂包括烃的主链和具有磺酸根离子（SO 3 - ）和硫酸根离子（OSO 3 - ）中的至少一种的侧取代基，酸性水溶液。

29. 发明授权

US08043970B2 Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same 有权
标题翻译：用于相对于氧化硅选择性研磨氮化硅的浆料组合物，抛光氮化硅层的方法和使用其制造半导体器件的方法
公开(公告)号：US08043970B2
公开(公告)日：2011-10-25
申请号：US12167781
申请日：2008-07-03
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L21/302 , H01L21/461 , B24D3/02 , C09C1/68
CPC分类号： H01L21/31053 , C09G1/02 , H01L29/66583 , H01L29/66795 , H01L29/7851
摘要： Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.
摘要翻译：提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水，并且第一试剂包括聚（丙烯酸）。浆料组合物可以具有相对于氧化硅的氮化硅相对于在半导体制造工艺中选择性研磨氮化硅层的高抛光选择性。

30. 发明申请

US20090280641A1 METHOD OF FORMING A CONTACT STRUCTURE 有权
标题翻译：形成接触结构的方法
公开(公告)号：US20090280641A1
公开(公告)日：2009-11-12
申请号：US12437390
申请日：2009-05-07
申请人： Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
发明人： Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
IPC分类号： H01L21/3205
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/76814 , H01L21/76846 , H01L21/76855 , H01L23/485 , H01L27/24 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.
摘要翻译：可以在具有接触区域的物体上形成绝缘层。绝缘层可以被部分蚀刻以形成暴露接触区域的开口。可以在暴露的接触区域上形成包括硅和氧的材料层。可以在包括硅和氧的材料层上形成金属层。包括硅和氧的材料层可以与金属层反应，以至少在接触区域上形成金属氧化物硅化物层。可以在金属氧化物硅化物层上形成导电层以填充开口。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式