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    • 23. 发明授权
    • Three-terminal design for spin accumulation magnetic sensor
    • 自旋累积磁传感器的三端设计
    • US08760817B2
    • 2014-06-24
    • US12470827
    • 2009-05-22
    • Thomas Dudley Boone, Jr.Bruce Alvin GurneyNeil Smith
    • Thomas Dudley Boone, Jr.Bruce Alvin GurneyNeil Smith
    • G11B5/33
    • G11B5/39G01R33/098G01R33/1284G11B5/398G11B2005/0005
    • A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.
    • 具有允许自由层位于空气轴承表面的三端设计的自旋累积传感器。 非磁性导电自旋传输层从自由层结构(位于ABS处)延伸到从ABS去除的参考层结构。 传感器包括用于在参考层结构上施加电流的电流或电压源。 电流源或电压源具有与非磁性自旋传输层连接的引线,也与电接地连接。 用于测量信号电压的电路测量与自由层结构电连接的屏蔽与地之间的电压。 自由层结构可以包括自旋扩散层,其确保在到达电压源的引线之前所有自旋电流完全消散,从而防止自旋电流分流到电压源。
    • 26. 发明授权
    • Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise
    • 具有反平行自由层结构和低电流感应噪声的电流垂直平面(CPP)磁阻传感器
    • US07957107B2
    • 2011-06-07
    • US12502764
    • 2009-07-14
    • Matthew J. CareyJeffrey R. ChildressStefan MaatNeil Smith
    • Matthew J. CareyJeffrey R. ChildressStefan MaatNeil Smith
    • G11B5/39
    • G01R33/093B82Y10/00B82Y25/00G11B5/3912G11B5/3932G11B2005/3996
    • A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
    • 电流垂直平面(CPP)磁阻传感器具有作为自由层的反向平行自由(APF)结构和施加的偏置或感测电流的特定方向。 (APF)结构具有第一自由铁磁(FL1),第二自由铁磁层(FL2)和反FL-FL2与FL2耦合的反并联(AP)耦合(APC)层,其结果是FL1和FL2具有实质上 反平行磁化方向,并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流(与电子电流相反)特别地工作,这导致电流引起的噪声的抑制。