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21. 发明申请

US20110124163A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20110124163A1
公开(公告)日：2011-05-26
申请号：US13020467
申请日：2011-02-03
申请人： Byoung-June KIM , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
发明人： Byoung-June KIM , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： H01L21/336 , H01L21/84
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译：薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

22. 发明授权

US07923287B2 Thin film transistor substrate having transparent conductive metal and method of manufacturing the same 有权
标题翻译：具有透明导电金属的薄膜晶体管基板及其制造方法
公开(公告)号：US07923287B2
公开(公告)日：2011-04-12
申请号：US12001031
申请日：2007-12-06
申请人： Eun-Guk Lee , Do-Hyun Kim , Chang-Oh Jeong , Je-Hun Lee , Soon-Kwon Lim
发明人： Eun-Guk Lee , Do-Hyun Kim , Chang-Oh Jeong , Je-Hun Lee , Soon-Kwon Lim
IPC分类号： H01L21/84 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/45 , H01L29/7869
摘要： A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electrode on a substrate, forming a gate insulating layer on the substrate on which the first conductive pattern group is formed, forming an oxide semiconductor pattern overlapping the gate electrode on the gate insulating layer, and forming first and second conductive layers on the substrate on which the oxide semiconductor pattern is formed and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad.
摘要翻译：公开了一种薄膜晶体管基板及其制造方法。制造薄膜晶体管基板的方法包括在基板上形成包括栅极线，栅电极和下栅极焊盘电极的第一导电图案组，在基板上形成栅极绝缘层，第一导电图案组形成，在所述栅极绝缘层上形成与所述栅电极重叠的氧化物半导体图案，以及在其上形成有所述氧化物半导体图案的所述基板上形成第一和第二导电层，并且对所述第一导电层和所述第二导电层进行构图以形成第二导电图案包括数据线，源电极，漏电极和数据焊盘。

23. 发明申请

US20090162982A1 ARRAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：阵列基板，具有该基板的显示装置及其制造方法
公开(公告)号：US20090162982A1
公开(公告)日：2009-06-25
申请号：US12392629
申请日：2009-02-25
申请人： Je-Hun Lee , Do-Hyun Kim , Eun-Guk Lee , Chang-Oh Jeong
发明人： Je-Hun Lee , Do-Hyun Kim , Eun-Guk Lee , Chang-Oh Jeong
IPC分类号： H01L21/336
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/124
摘要： An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer. The barrier layer is disposed on the insulating substrate. The conductive line is disposed on the barrier layer and includes copper or copper alloy. The copper nitride layer covers the conductive line. The passivation layer covers the switching element and the signal transmission line and has a contact hole through which a drain electrode of the switching element is partially exposed. The pixel electrode is disposed on the insulating substrate, and is connected to the drain electrode of the switching element through the contact hole.
摘要翻译：阵列基板包括开关元件，信号传输线，钝化层和像素电极。开关元件设置在绝缘基板上。信号传输线连接到开关元件，并且包括阻挡层，导电线和氮化铜层。阻挡层设置在绝缘基板上。导电线设置在阻挡层上并且包括铜或铜合金。氮化铜层覆盖导电线。钝化层覆盖开关元件和信号传输线，并且具有接触孔，开关元件的漏电极通过该接触孔部分露出。像素电极设置在绝缘基板上，并通过接触孔与开关元件的漏电极连接。

24. 发明申请

US20080185590A1 Thin Film Transistor Array Panel and Method for Manufacturing the Same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20080185590A1
公开(公告)日：2008-08-07
申请号：US11930536
申请日：2007-10-31
申请人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
发明人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译：薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

25. 发明授权

US08507956B2 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate 有权
标题翻译：线结构，制造线的方法，薄膜晶体管基板以及制造薄膜晶体管基板的方法
公开(公告)号：US08507956B2
公开(公告)日：2013-08-13
申请号：US13051904
申请日：2011-03-18
申请人： Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
发明人： Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
IPC分类号： H01L33/00 , H01L29/43 , H01L29/49 , H01L29/76
CPC分类号： H01L29/458 , H01L27/124 , H01L29/4908
摘要： Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.
摘要翻译：提供线结构，制造线的方法，薄膜晶体管（TFT）基板和制造TFT基板的方法。导线结构包括在基板上形成的包含铜层和铜固溶体层的阻挡层。

26. 发明授权

US07902553B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07902553B2
公开(公告)日：2011-03-08
申请号：US11930536
申请日：2007-10-31
申请人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
发明人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译：薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

27. 发明授权

US07811868B2 Method for manufacturing a signal line, thin film transistor panel, and method for manufacturing the thin film transistor panel 有权
标题翻译：信号线的制造方法，薄膜晶体管面板，以及薄膜晶体管面板的制造方法
公开(公告)号：US07811868B2
公开(公告)日：2010-10-12
申请号：US11932233
申请日：2007-10-31
申请人： Do-Hyun Kim , Won-Suk Shin , Chang-Oh Jeong , Hong-Sick Park , Eun-Guk Lee , Je-Hun Lee
发明人： Do-Hyun Kim , Won-Suk Shin , Chang-Oh Jeong , Hong-Sick Park , Eun-Guk Lee , Je-Hun Lee
IPC分类号： H01L21/768
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upper and lower layers, and forming a pixel electrode connected to the drain electrode.
摘要翻译：一种制造薄膜晶体管阵列面板的方法，包括在基板上形成栅极线; 在栅极线上顺序地形成栅极绝缘层，硅层和包括下层和上层的导体层，在导体层上形成光致抗蚀剂膜，图案化光致抗蚀剂膜以形成包括第一部分和第二部分具有比第一部分更大的厚度，通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻上层和下层，通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻硅层以形成半导体，通过使用回蚀工艺去除光致抗蚀剂图案的第二部分，通过使用光致抗蚀剂图案作为蚀刻掩模来选择性地湿法蚀刻导体层的上层，通过使用光致抗蚀剂干蚀刻导体层的下层图案作为蚀刻掩模以形成包括剩余的上层和下层的数据线和漏极，并且形成连接到漏电极的像素电极。

28. 发明申请

US20090174835A1 LIQUID CRYSTAL DISPLAY AND METHOD OF FABRICATING THE SAME TO HAVE TFT'S WITH PIXEL ELECTRODES INTEGRALLY EXTENDING FROM ONE OF THE SOURCE/DRAIN ELECTRODES 有权
标题翻译：液晶显示器及其制造方法，使其具有从像素电极组成的TFT，从电源/漏极电极中积分扩展
公开(公告)号：US20090174835A1
公开(公告)日：2009-07-09
申请号：US12344075
申请日：2008-12-24
申请人： Je-Hun Lee , Do-Hyun Kim , Tae-Sang Kim , Kyung-Seok Son , Chang-Oh Jeong
发明人： Je-Hun Lee , Do-Hyun Kim , Tae-Sang Kim , Kyung-Seok Son , Chang-Oh Jeong
IPC分类号： G02F1/1368 , H01L21/70 , H01L27/12
CPC分类号： H01L33/0095 , G02F1/133512 , G02F1/133516 , G02F1/136209 , G02F1/1368 , G02F2001/133397 , G02F2001/136222 , G02F2001/136231 , G02F2001/13685 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.
摘要翻译：液晶显示器（LCD）包括薄膜晶体管（TFT），每个薄膜晶体管具有间隔开的源/漏电极和设置在源/漏电极之间和之间的氧化物型半导体膜，以限定有源层。源/漏电极中的每一个包括细分透明导电层的一部分，其中透明导电层的一个细分从其源极/漏极之一内延伸，以限定光学曝光的像素电极，其可靠地与一个源/漏电极。由于可以使用较少数量的光刻掩模来形成TFT，所以可以降低批量生产成本并提高生产可靠性。

29. 发明申请

US20110169060A1 WIRE STRUCTURE, METHOD FOR FABRICATING WIRE, THIN FILM TRANSISTOR SUBSTRATE, AND METHOD FOR FABRICATING THE THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：线形结构，制造线，薄膜晶体管衬底的方法和用于制造薄膜晶体管衬底的方法
公开(公告)号：US20110169060A1
公开(公告)日：2011-07-14
申请号：US13051904
申请日：2011-03-18
申请人： Je-Hun LEE , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
发明人： Je-Hun LEE , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L27/124 , H01L29/4908
摘要： Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.
摘要翻译：提供线结构，制造线的方法，薄膜晶体管（TFT）基板和制造TFT基板的方法。导线结构包括在基板上形成的包含铜层和铜固溶体层的阻挡层。

30. 发明授权

US07956947B2 Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same 有权
标题翻译：具有改进的电气特性的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07956947B2
公开(公告)日：2011-06-07
申请号：US12355646
申请日：2009-01-16
申请人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
发明人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
IPC分类号： G02F1/136 , G02F1/13 , H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1296 , H01L29/4908
摘要： A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
摘要翻译：提供了可以具有高电荷迁移率并且可以实现宽显示装置的均匀电特性的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括具有通道并形成在绝缘基板上的氧化物半导体层，与氧化物半导体层重叠的栅极电极，设置在氧化物半导体层和栅电极之间的栅极绝缘膜，以及形成的钝化膜在氧化物半导体层和栅电极上。栅极绝缘膜和钝化膜中的至少一个含有含氟硅。

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