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21. 发明申请

US20050070096A1 Unidirectionally conductive materials for interconnection 失效
标题翻译：用于互连的单向导电材料
公开(公告)号：US20050070096A1
公开(公告)日：2005-03-31
申请号：US10676294
申请日：2003-09-30
申请人： Reza Golzarian , Robert Meagley , Seiichi Morimoto , Mansour Moinpour
发明人： Reza Golzarian , Robert Meagley , Seiichi Morimoto , Mansour Moinpour
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.
摘要翻译：描述了一种形成方法和包括具有单向导电材料的互连结构的器件。单向导电材料可以覆盖互连材料，和/或可以围绕互连材料，例如通过衬套沟槽和通孔的壁和底座。单向导电材料可以被配置为在对应于与接触点的突出物相对应的方向上导电，并且覆盖在单向导电材料上方的导电材料，但是在其它方向上没有实质的导电性。此外，单向导电材料可以在垂直于其形成的表面的方向或沿着或跨平面的方向上导电，但在其它方向上不具有实质的导电性。最后，单向导电材料可能具有倾向于减少金属扩散，减少电子迁移，提供粘附或粘结和/或用作蚀刻停止的性质。

22. 发明申请

US20070207403A1 Branching self-assembling photoresist with decomposable backbone 有权
标题翻译：具有可分解骨架的自组装光刻胶
公开(公告)号：US20070207403A1
公开(公告)日：2007-09-06
申请号：US11366344
申请日：2006-03-02
申请人： Robert Meagley
发明人： Robert Meagley
IPC分类号： G03C1/00
CPC分类号： G03F7/0752 , G03F7/0045 , G03F7/0395 , G03F7/0397 , G03F7/0755 , G03F7/165 , Y10S430/109
摘要： By using a branched long chained chain scission polymer as a photoresist for high resolution extreme ultraviolet (EUV), e-beam or 193 nanometer lithography applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.
摘要翻译：通过使用支链长链断裂聚合物作为用于高分辨率极紫外（EUV），电子束或193纳米光刻应用的光致抗蚀剂，可以实现具有良好机械性能的相对较高分子量的聚合物。另外，通过使用断链技术，线边缘粗糙度和分辨率可以同时提高。

23. 发明申请

US20060228884A1 Unidirectionally conductive materials for interconnection 有权
标题翻译：用于互连的单向导电材料
公开(公告)号：US20060228884A1
公开(公告)日：2006-10-12
申请号：US11321127
申请日：2005-12-28
申请人： Reza Golzarian , Robert Meagley , Seiichi Morimoto , Mansour Moinpour
发明人： Reza Golzarian , Robert Meagley , Seiichi Morimoto , Mansour Moinpour
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.
摘要翻译：描述了一种形成方法和包括具有单向导电材料的互连结构的器件。单向导电材料可以覆盖互连材料，和/或可以围绕互连材料，例如通过衬套沟槽和通孔的壁和底座。单向导电材料可以被配置为在对应于与接触点的突出物相对应的方向上导电，并且覆盖在单向导电材料上方的导电材料，但是在其它方向上没有实质的导电性。此外，单向导电材料可以在垂直于其形成的表面的方向或沿着或跨平面的方向上导电，但在其它方向上不具有实质的导电性。最后，单向导电材料可能具有倾向于减少金属扩散，减少电子迁移，提供粘附或粘结和/或用作蚀刻停止的性质。

24. 发明申请

US20050260790A1 Substrate imprinting techniques 审中-公开
标题翻译：基板印刷技术
公开(公告)号：US20050260790A1
公开(公告)日：2005-11-24
申请号：US10853307
申请日：2004-05-24
申请人： Michael Goodner , Paul Koning , James Matabayas , Robert Meagley
发明人： Michael Goodner , Paul Koning , James Matabayas , Robert Meagley
IPC分类号： H01L21/44 , H01L21/48 , H05K3/00 , H05K3/10 , H05K3/46
CPC分类号： H01L21/4846 , H05K3/005 , H05K3/107 , H05K3/465 , H05K2201/09036 , H05K2203/0108 , H05K2203/1189
摘要： A method of making an electronics substrate is provided. A material is deposited on a base component. The material has a first composition and includes a polymer. A pattern is imprinted into the material by contacting the material with a die and moving a profile of the die into the material. The material is then modified while being held in the profile of the die to cause at least partial curing of the material due to a change in composition of the material from a first composition to a second composition. The die is then removed from the material. Electric conductors are then formed in trenches of the pattern.
摘要翻译：提供一种制造电子基板的方法。材料沉积在基底部件上。该材料具有第一组成并且包括聚合物。通过使材料与模具接触并将模具的轮廓移动到材料中，将图案压印到材料中。然后在将材料保持在模具的轮廓中的同时将材料改性以由于材料从第一组合物到第二组合物的组成的变化而使材料至少部分固化。然后将模具从材料中取出。然后在图案的沟槽中形成导电体。

25. 发明申请

US20050258107A1 Metal ion separation from aqueous solutions using photoswitchable ionophores 有权
标题翻译：使用可开关的离子载体从水溶液中分离金属离子
公开(公告)号：US20050258107A1
公开(公告)日：2005-11-24
申请号：US10850414
申请日：2004-05-20
申请人： Bob Leet , Robert Meagley , Michael Goodner , Michael McSwiney
发明人： Bob Leet , Robert Meagley , Michael Goodner , Michael McSwiney
IPC分类号： B03C1/00 , C02F1/26 , C02F1/30 , C02F1/32 , C02F1/68 , C22B3/24 , C22B3/26
CPC分类号： C02F1/683 , C02F1/26 , C02F1/30 , C02F1/32 , C02F2101/20 , C22B3/0097 , C22B3/24 , Y02P10/234 , Y02W10/37 , Y10T436/25375
摘要： Methods and systems for the concentration and removal of metal ions from aqueous solutions are described, comprising treating the aqueous solutions with photoswitchable ionophores.
摘要翻译：描述了从水溶液中浓缩和去除金属离子的方法和系统，包括用可光开关的离子载体处理水溶液。

26. 发明申请

US20050221220A1 Photoacid generators based on novel superacids 有权
标题翻译：基于新型超强酸的光酸发生器
公开(公告)号：US20050221220A1
公开(公告)日：2005-10-06
申请号：US10816502
申请日：2004-03-31
申请人： Robert Meagley
发明人： Robert Meagley
IPC分类号： G03C1/492 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： Carborane based PAG's are bulky, produce a strong and large superacid, and have polarities that are compatible with the chemically amplified polymers typically used in photoresists. Carborane based PAG's also provide another broad class of bulky PAG's that may be used in photoresist formulations that offer flexibility in acid strength and polarity through changes in chemical structure. These PAG's may be used with EUV wavelengths, 157 nm, or 193 nm. Resolution and critical dimension control may be improved through the use of carborane based PAG's.
摘要翻译：基于碳硼烷的PAG是体积庞大的，产生强大且超大的超强酸，并且具有与通常用于光致抗蚀剂中的化学增强聚合物相容的极性。基于碳硼烷的PAG还提供另外一大类庞大的PAG，可用于光刻胶配方中，通过化学结构的变化提供酸强度和极性的灵活性。这些PAG可以与EUV波长，157nm或193nm一起使用。通过使用基于碳硼烷的PAG可以改善分辨率和关键尺寸控制。

27. 发明申请

US20050084807A1 Reducing photoresist line edge roughness using chemically-assisted reflow 审中-公开
标题翻译：使用化学辅助回流降低光刻胶线边缘粗糙度
公开(公告)号：US20050084807A1
公开(公告)日：2005-04-21
申请号：US10688521
申请日：2003-10-17
申请人： Robert Meagley , Michael Goodner , E. Putna , Shan Clark , Wang Yueh
发明人： Robert Meagley , Michael Goodner , E. Putna , Shan Clark , Wang Yueh
IPC分类号： G03F7/32 , G03F7/40 , G03C5/18
CPC分类号： G03F7/32 , G03F7/40
摘要： Line edge roughness may be reduced by treating a patterned photoresist with a plasticizer. The plasticizer may be utilized in a way to surface treat the photoresist after development. Thereafter, the plasticized photoresist may be subjected to a heating step to reflow the photoresist. The reflow process may reduce the line edge roughness of the patterned, developed photoresist.
摘要翻译：可以通过用增塑剂处理图案化的光致抗蚀剂来减少线边缘粗糙度。增塑剂可以以显影处理光刻胶的方式使用。此后，可以对塑化的光致抗蚀剂进行加热步骤以回流光致抗蚀剂。回流工艺可以降低图案化显影的光致抗蚀剂的线边缘粗糙度。

28. 发明申请

US20050058933A1 Quantum efficient photoacid generators for photolithographic processes 审中-公开
标题翻译：用于光刻工艺的量子效率光酸发生器
公开(公告)号：US20050058933A1
公开(公告)日：2005-03-17
申请号：US10666019
申请日：2003-09-17
申请人： Robert Meagley , Ernisse Putna
发明人： Robert Meagley , Ernisse Putna
IPC分类号： G03C1/76 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392
摘要： A photoacid generator with sigma-bonded cations may be utilized with certain photolithographic processes to provide desirable absorbance and high quantum efficiency.
摘要翻译：具有σ-键合阳离子的光致酸发生器可以用某些光刻方法使用，以提供所需的吸光度和高量子效率。

29. 发明申请

US20050014378A1 Substrate patterning integration 审中-公开
标题翻译：基板图案集成
公开(公告)号：US20050014378A1
公开(公告)日：2005-01-20
申请号：US10621744
申请日：2003-07-16
申请人： Michael Goodner , Bob Leet , Robert Meagley , Michael McSwiney
发明人： Michael Goodner , Bob Leet , Robert Meagley , Michael McSwiney
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/31144
摘要： A substrate patterning integration is disclosed to address structural and process limitations of conventional resist patterning over hardmask techniques. A resist layer positioned adjacent a substrate layer is patterned, subsequent to which a hardmask layer is deposited. The hardmask layer may be thinned to expose remaining portions of the patterned resist layer for removal by chemical treatment to expose portions of the underlying substrate layer into which the pattern may be transferred using wet or dry chemical etch techniques.
摘要翻译：公开了衬底图案化集成以解决传统抗蚀剂图案化在硬掩模技术上的结构和工艺限制。对邻近衬底层定位的抗蚀剂层进行图案化，随后沉积硬掩模层。硬掩模层可以变薄以暴露图案化的抗蚀剂层的剩余部分，以通过化学处理去除，以暴露使用湿式或干式化学蚀刻技术将图案转移到其中的下层基底层的部分。

30. 发明申请

US20050008966A1 Photodefinable polymers for semiconductor applications 审中-公开
标题翻译：用于半导体应用的可光缩合聚合物
公开(公告)号：US20050008966A1
公开(公告)日：2005-01-13
申请号：US10616895
申请日：2003-07-10
申请人： Robert Meagley , Takashi Hirano , Michael Goodner
发明人： Robert Meagley , Takashi Hirano , Michael Goodner
IPC分类号： C08K3/22 , G03C1/76 , H01L21/312
CPC分类号： H01L21/02118 , C08K3/22 , H01L21/02126 , H01L21/312
摘要： A polymer system for semiconductor applications may be formed by blending a filler material including Zirconia or silica and a polybenzoxazole precursor for a photodefinable polymer. The filler may be chosen so as not to adversely affect the photodefinability of the resulting system and, in some embodiments, may improve the mechanical or chemical properties of the resulting system.
摘要翻译：用于半导体应用的聚合物体系可以通过混合包含氧化锆或二氧化硅的填充材料和用于光可定义聚合物的聚苯并恶唑前体来形成。填料可以选择成不会不利地影响所得体系的光定性，并且在一些实施方案中可以改善所得体系的机械或化学性质。

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