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21. 发明授权

US08748868B2 Nitride semiconductor light emitting device and epitaxial substrate 失效
标题翻译：氮化物半导体发光器件和外延衬底
公开(公告)号：US08748868B2
公开(公告)日：2014-06-10
申请号：US13294010
申请日：2011-11-10
申请人： Takashi Kyono , Yohei Enya , Katsushi Akita , Masaki Ueno , Yusuke Yoshizumi , Takamichi Sumitomo
发明人： Takashi Kyono , Yohei Enya , Katsushi Akita , Masaki Ueno , Yusuke Yoshizumi , Takamichi Sumitomo
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02661 , H01L33/18 , H01L33/32 , H01S5/2009 , H01S5/22 , H01S5/3201 , H01S5/3211
摘要： For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization.
摘要翻译：对于氮化物半导体发光器件，支撑衬底的六边形GaN的c轴矢量相对于垂直于主表面的法线轴Nx相对于X轴方向倾斜。在半导体区域中，在支撑基板的主表面上沿着法线布置有源层，第一氮化镓基半导体层，电子阻挡层和第二氮化镓基半导体层。 p型覆层由AlGaN构成，电子阻挡层由AlGaN构成。电子阻挡层在X轴方向上受到拉伸应变。第一氮化镓基半导体层在X轴方向上受到压应变。界面处的错配位错密度小于界面处的位错密度。在界面处的电子势垒由压电极化引起。

22. 发明授权

US08548021B2 III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser 有权
标题翻译： III族氮化物半导体激光器和III族氮化物半导体激光器的制造方法
公开(公告)号：US08548021B2
公开(公告)日：2013-10-01
申请号：US13211858
申请日：2011-08-17
申请人： Kei Fujii , Masaki Ueno , Katsushi Akita , Takashi Kyono , Yusuke Yoshizumi , Takamichi Sumitomo , Yohei Enya
发明人： Kei Fujii , Masaki Ueno , Katsushi Akita , Takashi Kyono , Yusuke Yoshizumi , Takamichi Sumitomo , Yohei Enya
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S2304/04
摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.
摘要翻译：提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜沿着C轴方向的C x轴。在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义在LED模式下。

23. 发明授权

US08483251B2 Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode 失效
标题翻译： III族氮化物半导体激光二极管，以及III族氮化物半导体激光二极管的制造方法
公开(公告)号：US08483251B2
公开(公告)日：2013-07-09
申请号：US13294378
申请日：2011-11-11
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01S5/2009 , H01S5/34333
摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.
摘要翻译：提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。在n型包覆层上生长GaN光引导层以使其晶格弛豫。生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。交界处的位错密度大于其他路口的位错密度。

24. 发明授权

US08476615B2 GaN-based semiconductor light emitting device and the method for making the same 失效
标题翻译： GaN系半导体发光元件及其制造方法
公开(公告)号：US08476615B2
公开(公告)日：2013-07-02
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

25. 发明授权

US08357946B2 Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件，外延衬底和用于制造氮化物半导体发光器件的方法
公开(公告)号：US08357946B2
公开(公告)日：2013-01-22
申请号：US13189194
申请日：2011-07-22
申请人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
发明人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
IPC分类号： H01L27/15
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0
摘要翻译：提供了一种氮化物半导体发光器件，其包括具有半极性表面的GaN支撑基底上方的发光层，并且允许抑制由于失配位错引起的发光效率的降低。氮化物半导体发光器件11具有由六方晶系氮化镓构成的支撑基体13，包含InX1AlY1Ga1-X1-Y1N（0

26. 发明授权

US08304269B2 Method of fabricating group III nitride semiconductor device 有权
标题翻译：制备III族氮化物半导体器件的方法
公开(公告)号：US08304269B2
公开(公告)日：2012-11-06
申请号：US13112714
申请日：2011-05-20
申请人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
发明人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.
摘要翻译：提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

27. 发明申请

US20120058583A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120058583A1
公开(公告)日：2012-03-08
申请号：US13240368
申请日：2011-09-22
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01L33/62
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

28. 发明申请

US20110121265A1 GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译： III类氮化物半导体光学器件
公开(公告)号：US20110121265A1
公开(公告)日：2011-05-26
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

29. 发明授权

US07939354B2 Method of fabricating nitride semiconductor laser 有权
标题翻译：氮化物半导体激光器的制造方法
公开(公告)号：US07939354B2
公开(公告)日：2011-05-10
申请号：US12396858
申请日：2009-03-03
申请人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
发明人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S2304/12
摘要： A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a predetermined axis extending in the direction of a c-axis of the hexagonal gallium nitride semiconductor. Each marker structure extends along a reference plane defined by the c-axis and an m-axis of the hexagonal gallium nitride semiconductor. The method comprises cutting the substrate along a cutting plane to form a wafer of hexagonal gallium nitride semiconductor, and the cutting plane intersects with the plurality of the marker structures. The wafer has a plurality of first markers, each of which extends from the primary surface to the back surface of the wafer, and each of the first markers comprises part of each of the marker structures. The primary surface of the wafer is semipolar or nonpolar. The method comprises growing a number of gallium nitride based semiconductor layers for a semiconductor laser. The method comprises cleaving the substrate product at a cleavage plane of the hexagonal gallium nitride semiconductor, after forming a substrate product in an electrode forming step.
摘要翻译：一种制造氮化物半导体激光器的方法包括制备具有多个标记结构的基板和由六方晶系氮化镓半导体制成的晶体。基板的主表面和背面与沿六方晶系氮化镓半导体的c轴方向延伸的规定轴相交。每个标记结构沿着由六方晶系氮化镓半导体的c轴和m轴限定的参考平面延伸。该方法包括沿着切割平面切割基板以形成六方晶系氮化镓半导体晶片，切割平面与多个标记结构相交。晶片具有多个第一标记，每个第一标记从晶片的主表面延伸到后表面，并且每个第一标记包括每个标记结构的一部分。晶圆的主表面是半极性或非极性。该方法包括生长用于半导体激光器的多个氮化镓基半导体层。该方法包括在电极形成步骤中形成衬底产物之后，在六方晶系氮化镓半导体的解理面处切割衬底产物。

30. 发明申请

US20100213439A1 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体光学器件，用于基于氮化物的半导体光学器件的外延晶体管，以及制造半导体发光器件的方法
公开(公告)号：US20100213439A1
公开(公告)日：2010-08-26
申请号：US12752647
申请日：2010-04-01
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04 , H01L33/00 , H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向，类型层到n型层。因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

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