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21. 发明授权

US07056836B2 Manufacturing method for a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07056836B2
公开(公告)日：2006-06-06
申请号：US10616732
申请日：2003-07-10
申请人： Hitomi Watanabe
发明人： Hitomi Watanabe
IPC分类号： H01L21/31
CPC分类号： H01L21/823462 , H01L21/28185 , H01L21/28202 , H01L21/31111 , H01L21/3144 , H01L29/518
摘要： In a method for manufacturing a semiconductor device, a first silicon oxide film is formed on a semiconductor substrate. The first silicon oxide film is nitrided so that silicon oxynitride forms at an interface between the semiconductor substrate and the first silicon oxide film. The first silicon oxide film is removed from a portion of the semiconductor substrate using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the portion of the semiconductor substrate and the first silicon oxide film is completely removed. Thereafter, a second silicon oxide film is formed in the portion of the semiconductor substrate from which the first silicon oxide film and the silicon oxynitride have been removed.
摘要翻译：在半导体器件的制造方法中，在半导体衬底上形成第一氧化硅膜。将第一氧化硅膜氮化，使得在半导体衬底和第一氧化硅膜之间的界面处形成氮氧化硅。使用至少含有氨 - 过氧化氢溶液的化学物质从半导体衬底的一部分去除第一氧化硅膜，使得在半导体衬底的部分和第一氧化硅膜之间的界面处形成的氧氮化硅完全删除。此后，在半导体衬底的已经去除了第一氧化硅膜和氮氧化硅的部分中形成第二氧化硅膜。

22. 发明授权

US5602408A Semiconductor device having polycrystalline silicon load devices 失效
标题翻译：具有多晶硅负载装置的半导体装置
公开(公告)号：US5602408A
公开(公告)日：1997-02-11
申请号：US419356
申请日：1995-04-10
申请人： Hitomi Watanabe , Hiroaki Takasu
发明人： Hitomi Watanabe , Hiroaki Takasu
IPC分类号： H01L27/04 , H01L21/822 , H01L27/11 , H01L23/62
CPC分类号： H01L27/1112
摘要： A semiconductor device comprises a silicon semiconductor substrate and an insulating film formed on a surface of the silicon semiconductor substrate. One of a surface of the silicon semiconductor substrate or a surface of the insulating film is provided with at least one step portion. A polycrystalline silicon layer is formed uniformly on at least a side surface of the step portion and a top surface of the insulating film. The polycrystalline silicon layer which is formed on the side surface of the step portion comprises a resistance element, and a portion of the polycrystalline silicon layer which is formed on the top surface of the insulating film is doped with an impurity to form a conductive element. By this construction, the area occupied by the load devices on the semiconductor substrate is effectively reduced, thereby increasing the packing density of the semiconductor device.
摘要翻译：半导体器件包括硅半导体衬底和形成在硅半导体衬底的表面上的绝缘膜。硅半导体基板的表面或绝缘膜的表面之一设置有至少一个台阶部。在台阶部的至少一个侧面和绝缘膜的上表面上均匀地形成多晶硅层。形成在台阶部分的侧面上的多晶硅层包括电阻元件，并且在绝缘膜的顶表面上形成的多晶硅层的一部分被掺杂以形成导电元件。通过这种结构，半导体衬底上的负载装置所占据的面积被有效地减少，从而提高了半导体器件的堆积密度。

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