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21. 发明专利

JPS5632798A SCREEN PRINTING MACHINE 失效
公开(公告)号：JPS5632798A
公开(公告)日：1981-04-02
申请号：JP10723979
申请日：1979-08-24
申请人： HITACHI LTD
发明人： TAKAHASHI MASAAKI , MISAWA YUTAKA , YATSUNO KOUMEI
IPC分类号： B41F15/08 , H01L21/30 , H01L21/68 , H05K3/12

22. 发明专利

JPS5613719A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5613719A
公开(公告)日：1981-02-10
申请号：JP8933979
申请日：1979-07-16
申请人： HITACHI LTD
发明人： MOCHIZUKI YASUHIRO , WAKUI TAKAYUKI , YATSUNO KOUMEI
IPC分类号： H01L21/761 , H01L21/033 , H01L21/22 , H01L21/225 , H01L21/331 , H01L29/73 , H01L29/74
摘要： PURPOSE:To diffuse Al in a condition that is not polluted with impurities by a method wherein openings are formed to an SiO2 film on an Si substrate, and Al is attached onto the Si substrate so as not to contact with SiO2 directly and heated. CONSTITUTION:An SiO2 film 11 is formed on an n-type Si substrate 10, a resist mask 12 is made up, and grooves are etched. When Al 14 is evaporated and the mask 12 and Al on the mask are removed, Al and SiO2 do not contact. When the substrate is treated at a high temperature in N2+O2, P-type isolation layers are connected. When using the SiO2 mask in this manner, the outward diffusion of a dopant and autodoping are prevented, direct contact between the SiO2 film and the Al evaporated film is avoided, and the crystallization and generation of cracks of the SiO2 film are obviated, thus obtaining an extremely excellent Al selective diffused layer, then pellets formed ensure high pressure resistance.

23. 发明专利

JPS55143042A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55143042A
公开(公告)日：1980-11-08
申请号：JP5034879
申请日：1979-04-25
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOUMEI , NAKAMURA KOUSUKE
IPC分类号： H01L21/52 , H01L21/58 , H01L23/08 , H01L23/15 , H01L23/373 , H01L23/492
摘要： PURPOSE:To improve the transfer of heat generated in a semiconductor unit and reduce the thermal fatigue of the unit and the weight of a device, by making a semiconductor unit supporting member of silicon carbide or of a sintered piece consisting of silicon carbide and metal. CONSTITUTION:A member 2 for supporting a silicon transistor pellet 1, which is a semiconductor unit, is made of silicon carbide or of a material which is produced by pressing and sintering mixed powder of silicon carbide and aluminum under vacuum. The pellet 1 and the support member 2 are integrated with each other. The emitter and the base regions of the pellet 1 are connected through aluminum lead wires 3, 4 to terminals which are insulated from the support member 2. The collector region of the pellet is connected to a collector terminal through the support member 2. The pellet and the support member are molded as a whole so that they are perfectly isolated from the external air. According to this constitution, the heat resistance between the pellet 1 and the support 2 is 1 deg.C/W or less and no thermal fatigue is caused in the placed part of the pellet 1.

24. 发明专利

JPS55138609A SEMICONDUCTOR DISPLACING TRANSDUCER 失效
公开(公告)号：JPS55138609A
公开(公告)日：1980-10-29
申请号：JP4542479
申请日：1979-04-16
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOUMEI , OKAMURA MASAHIRO
IPC分类号： G01L1/18 , G01D5/16 , G01L1/22 , H01L29/84
摘要： PURPOSE:To make be free from strain due to thermal factor, by constituting the strain transmitting member and strain detecting member with materials approximate in the coefficient of thermal expansion. CONSTITUTION:Part of supporting member 11 made of SiC is screwed to a housing 12 made of stainless steel, while the another part is supporting part of a strain transmitting member 15 made of Si which is made integral with a strain detecting member 13 made of Si having an SiO2 film at least on the surface of adhesion through Au alloy solder 14. The detected displacement signal is taken out from a lead wire 16. In this constitution, since the coefficient of thermal expansion of supporting member is similar to that of the strain transmitting member, occurrence of strain due to temperature changes in the securing part of both the members and fluctuations may be reduced.

25. 发明专利

JPS55113380A SEMICONDUCTOR DISPLACEMENT TRANSDUCER 失效
公开(公告)号：JPS55113380A
公开(公告)日：1980-09-01
申请号：JP1966179
申请日：1979-02-23
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOUMEI
IPC分类号： G01B7/16 , H01L29/84
摘要： PURPOSE:To allow a semiconductor displacement transducer to accurately transmit a strain occurred between a strain senser and a strain transfer member by specifying the thickness of an oxide film formed on the strain transfer member of a semiconductor substrate in the transducer and thus improving the yield of an electric insulation between the senser and the member of the transducer. CONSTITUTION:A strain-sensitive region 13 is formed on one main surface 12 side of a semiconductor monocrystal 11, and a semiconductor strain detector 16 having an insulated oxide film 15 and a strain transfer member 17 made of elastic metallic material are integrated through a solder layer of alloy material on the other main surface 14 of the monocrystal 11. In this configuration the oxide film 15 is formed at higher than 2mum thick, preferably 2-7mum. The insulating yield between the senser 13 and the member 17 strongly depends upon the thickness in the region that the oxide film 15 is thin, becomes high in the region that the thickness is higher than 2mum and does not have high dependence on the thickness in that region. On the other hand, the strain transfer from the member to the senser tends to be reduced as the oxide film becomes thicker. However, the strain transfer becomes accurate in the region up to a thickness of 7mum.

26. 发明专利

JPS5591150A MANUFACTURE OF RESINNSEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5591150A
公开(公告)日：1980-07-10
申请号：JP16356778
申请日：1978-12-28
申请人： HITACHI LTD
发明人： MOCHIZUKI YASUHIRO , KAGAMI TERUYUKI , YATSUNO KOUMEI
IPC分类号： H01L23/29 , H01L23/31
摘要： PURPOSE:To improve the reliability of a semiconductor device by sufficiently drying silicone resin used to seal a semiconductor element before molding. CONSTITUTION:A semiconductor element treated with a glass pssivation is transfer molded with silicone resin, and then sealed with resin. At this time the silicone resin is, bofore molding, heated at 60-110 deg.C in vacuum or nitrogen atmosphere for 30 monutes to 5 hours to thereby sufficiently dry the resin. The semiconductor element is then molded and sealed with this resin at 180 deg.C under the pressure of 70kg/cm . Thus, its leakage current variation is reduced, and hard waveform in its voltage vs. current characteristics is exhibited. Thus, its reliability is elevated.

27. 发明专利

JPS5544717A MANUFACTURING SEMICONDUCTOR STRAINNGAGE TYPE PRESSURE SENSOR 失效
公开(公告)号：JPS5544717A
公开(公告)日：1980-03-29
申请号：JP11757878
申请日：1978-09-25
申请人： HITACHI LTD
发明人： SUZUKI KIYOMITSU , NISHIHARA MOTOHISA , KOBORI SHIGEYUKI , YATSUNO KOUMEI , TAKAHASHI MINORU
IPC分类号： H01L29/84
摘要： PURPOSE:To make mass production of pressure sensors having excellent quality by sticking a glass member, whose thermal-expansion coefficient is similar to that of silicon, to the strain gage side of a silicon wafer, in which a large number of pressure sensing diaphragms are provided, and by cutting the wafer and the glass member. CONSTITUTION:A glass member 22, which has a large number of recesses 7 with the bottoms and a large number of grooves 9 with the bottoms, and whose thermal- expansion coefficient is similar to that of silicon, is positioned and stuck to the strain gage side of the silicon wafer 11 having a large number of pressure sensing diaphragms 5 by inorganic bonding or a positive electrode method in vacuum condition, thereby vacuum reference chambers are formed in individual recesses 7. Then, the conditions and the interrelationship of the positions are inspected under the wafer state so as to facilitate quality control. After the wafer 11 and the member 22 are stuck, the boundaries of the grooves 9 in the member 22 which is located on the electrode 8 on the wafer 11 are cut, thereby stuck portions of a plurality of absolute pressure sensors are formed.

28. 发明专利

JPS5536913A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5536913A
公开(公告)日：1980-03-14
申请号：JP10762378
申请日：1978-09-04
申请人： HITACHI LTD
发明人： MOCHIZUKI YASUHIRO , WAKUI TAKAYUKI , YASUDA YASUMICHI , YATSUNO KOUMEI
IPC分类号： H01L21/225 , H01L21/22
摘要： PURPOSE:To form pn structure free from crystal defect, bend or deformation through simple process in a short period of time by driving in diffusion Al large in diffusion coefficient and boron easy to control diffusion precision in Si. CONSTITUTION:An Si oxidized film 32 is formed by oxidizing Si semiconductor substrate 31 at a given temperature in steam, a predeposition layer 33 of boron is diffused, and unnecessary matter like boron glass which is formed on the surface of the substrate 31 is removed through etching. And an Al spattered film 34 is formed on one main surface of the substrate 31. Now, pn structure or pnp structure free from crystal defect, bend or deformation can be formed through simple process in a short period of time by driving in diffusion Al large in diffusion coefficient and boron easy to control diffusion precision simultaneously in Si.

29. 发明专利

JPS5524410A METHOD OF MANUFACTURING SILICON SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5524410A
公开(公告)日：1980-02-21
申请号：JP9616878
申请日：1978-08-09
申请人： HITACHI LTD
发明人： MOCHIZUKI YASUHIRO , YATSUNO KOUMEI , WAKUI TAKAYUKI
IPC分类号： H01L21/316
摘要： PURPOSE:To obtain a hot oxidized film free from crystallization on Al-diffused Si substrate by high-pressure steam oxidation process. CONSTITUTION:An SiO2 film formed on the surface of Al-diffused Si substrate through heating in an oxidative atmosphere is very easy to crystalize, and thus a crack results in the crystal grain boundaries. According to high-pressure steam oxidation process, the thickness of SiO2 film is proportional to a square root of the product of time for oxidation and steam pressure. Therefore, the higher steam pressure works, the shorter oxidation time becomes for constant thickness of the film to obtain. From carrying out high-pressure steam oxidation at low temperature of about 900 deg.C, SiO2 is almost not crystallized and SiO2 is obtainable in good condition consequently. It is then preferable to select steam pressure at 7-15 atm. for safely, easy handling and precision of the formed film thickness. This ensures that thermal oxidizing temperature can be lowered conspicuously, and a crystallized crack can be prevented from arising on the surface of Al-diffused layer, thus obtaining a given thickness of SiO2 film stable thermodynamically in high pressures.

30. 发明专利

JPS553618A MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS553618A
公开(公告)日：1980-01-11
申请号：JP7422978
申请日：1978-06-21
申请人： HITACHI LTD
发明人： MOCHIZUKI YASUHIRO , YATSUNO KOUMEI , WAKUI TAKAYUKI , MISAWA YUTAKA
IPC分类号： H01L21/225
摘要： PURPOSE:To obtain a deep diffusion region in a short time with good reproductivity through a precise control of diffusion time as well as the thickness of a SiO2 film, when forming a P-type region by use of a diffusion source prepared by depositing the SiO2 film on a semiconductor substrate, opening windows and filling up the window with a high purity Al. CONSTITUTION:This process comprises depositing a SiO2 film 12 on a N-type Si substrate 11, opening windows on a region where an Al(diffusion source is formed, and depositing an Al)film 13 of 99.9995% in purity on the entire surface. In this process, a filamentary material is used as Al and the formation of which is performed by use of electron beam heating method with in a vacuum chamber at pressures of less than 6X10 Torr with the substrate 11 being heated to 230-250 deg.C. Next, all the Al film except for the film 13 within the windows are removed, and the substrate 11 is entered into the diffusion furnace and heated to 1250 deg.C in a O2 gas for an initial period and thereafter in a N2 gas to form a deep P-type region 14 and a P-N juction 15. In this process, the diffusion time t(h) and the thickness X of the SiO2 film are controlled to satisfy 0.02 .

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