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21. 发明专利

JP2008028299A Method for manufacturing display device 审中-公开
标题翻译：制造显示装置的方法
公开(公告)号：JP2008028299A
公开(公告)日：2008-02-07
申请号：JP2006201763
申请日：2006-07-25
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAMO NAOHIRO , NODA TAKASHI , OUE EIJI , KAITO TAKUO , ITOGA TOSHIHIKO
IPC分类号： H01L21/20 , G09F9/00 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a high definition display device by shortening silicon melting time when a banded silicon crystal is formed in a SELAX method to improve crystallinity, and enhancing operating characteristics of a thin film transistor using a silicon film. SOLUTION: While an insulating substrate 505 is cooled on which a semiconductor film for constituting the thin film transistor is formed, the semiconductor film is irradiated with a continuous oscillation laser 501 while scanning, and a banded semiconductor crystal 503 is grown where a longitudinal direction of crystal grains is in the scanning direction. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种高清晰度显示装置，通过在SELAX方法中形成带状硅晶体时缩短硅熔融时间，以提高结晶度，并提高使用硅膜的薄膜晶体管的工作特性。解决方案：在冷却其上形成用于构成薄膜晶体管的半导体膜的绝缘衬底505的同时，在扫描时用连续振荡激光器501照射半导体膜，并且生长带状半导体晶体503，其中晶粒的长度方向为扫描方向。版权所有（C）2008，JPO＆INPIT

22. 发明专利

JP2007142082A Display device, and method of manufacturing same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：JP2007142082A
公开(公告)日：2007-06-07
申请号：JP2005332701
申请日：2005-11-17
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , ITOGA TOSHIHIKO , KANEKO TOSHITERU , SONODA DAISUKE , KURIYAGAWA TAKESHI
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a display device wherein the number of manufacturing processes is reduced. SOLUTION: A gate electrode has a first gate electrode, and a second gate electrode which is superposed on the first gate electrode and has a smaller size in a channel direction than the first gate electrode. The semiconductor layer has a channel region which is superposed on the second gate electrode, a first impurity region which is superposed on the first gate electrode and is formed outside the second gate electrode, a second impurity region formed outside the gate electrode, and a conductive third impurity region which is formed outside the gate electrode and the second impurity region. Implantation of impurities is performed for both the first and second impurity regions at once for the first impurity region via the first gate electrode and for the second impurity region, so that a peak position in a depth direction of impurity concentration lies in a lower layer than the semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种减少制造工艺数量的显示装置的制造方法。解决方案：栅电极具有第一栅电极和第二栅电极，该第二栅电极叠置在第一栅电极上并且具有比第一栅电极在沟道方向上更小的尺寸。半导体层具有重叠在第二栅电极上的沟道区，叠置在第一栅极上并形成在第二栅电极外侧的第一杂质区，形成在栅电极外侧的第二杂质区和导电第三杂质区，形成在栅电极和第二杂质区之外。通过第一栅电极和第二杂质区，对第一杂质区和第二杂质区一次对第一和第二杂质区进行杂质的注入，使得杂质浓度的深度方向的峰位置位于比半导体层。版权所有（C）2007，JPO＆INPIT

23. 发明专利

JP2005274984A Display device and display device manufacturing method 有权
标题翻译：显示设备和显示设备制造方法
公开(公告)号：JP2005274984A
公开(公告)日：2005-10-06
申请号：JP2004088233
申请日：2004-03-25
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAITO TAKUO , OUE EIJI , KAMO NAOHIRO , KIMURA TAIICHI , ITOGA TOSHIHIKO
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To provide a display device manufacturing method directed toward reduction in manufacturing man-hour. SOLUTION: The display device manufacturing method is characterized by forming a semiconductor layer on the upper surface of a substrate, forming an insulating film on the upper surface of the semiconductor layer, performing impurity implantation into the semiconductor layer in a 2nd area through the insulating film using a mask covering a 1st area but exposing the 2nd area, removing the mask then etching the surface of the insulating film in the 1st and 2nd areas to the extent that the insulating film in the 2nd area remains, and thereby making the film thickness of the insulating film in the 2nd area thinner than that of the insulating film in the 1st area. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种旨在减少制造工时的显示装置制造方法。解决方案：显示器件制造方法的特征在于在衬底的上表面上形成半导体层，在半导体层的上表面上形成绝缘膜，在第二区域中对半导体层进行杂质注入所述绝缘膜使用覆盖第一区域但暴露第二区域的掩模，除去掩模，然后在第一和第二区域中蚀刻绝缘膜的表面，直到第二区域中的绝缘膜保留，从而使第2区域的绝缘膜的膜厚比第1区域的绝缘膜薄。版权所有（C）2006，JPO＆NCIPI

24. 发明专利

JP2010122521A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2010122521A
公开(公告)日：2010-06-03
申请号：JP2008297058
申请日：2008-11-20
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , GOTO JUN , KAITO TAKUO
IPC分类号： G02F1/1368
摘要： PROBLEM TO BE SOLVED: To provide a display device having a driving circuit formed thereon using a CMOSTFT around a display region and capable of stabilizing characteristics of a PMOSTFT constituting the CMOSTFT.
SOLUTION: In a right PMOSTFT in the CMOSTFT, an N-type channel region 8 is formed and a P-type region 7b is formed around a channel width direction. In a source region 14, which is P-type, a first N-type region 12b is formed in contact with the P-type region 7b in the channel region, and a second N-type region 11a having a larger impurity density than that of the first N-type region 12b is formed in contact with the first N-type region 12b. The current flowing through the P-type region 7b around the channel region is suppressed by a PN junction formed in the first and second N-type regions and the source region 14, which is P-type to make the characteristics of the PMOSTFT stable.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种显示装置，其具有在显示区域周围使用CMOSTFT形成的驱动电路，并且能够稳定构成CMOSTFT的PMOSTFT的特性。解决方案：在CMOSTFT中的右PMOSTFT中，形成N型沟道区8，并且在沟道宽度方向上形成P型区7b。在P型的源极区域14中，形成与沟道区域中的P型区域7b接触的第一N型区域12b和杂质密度大的第二N型区域11a。第一N型区域12b形成为与第一N型区域12b接触。通过形成在第一和第二N型区域中的PN结和作为P型的源极区域14的沟道区域周围流过P型区域7b的电流来抑制PMOSTFT的特性稳定。版权所有（C）2010，JPO＆INPIT

25. 发明专利

JP2009076558A Manufacturing method of display unit 审中-公开
标题翻译：显示单元的制造方法
公开(公告)号：JP2009076558A
公开(公告)日：2009-04-09
申请号：JP2007242286
申请日：2007-09-19
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , KAITO TAKUO , SONODA DAISUKE , MIYAKE HIDEKAZU
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/20 , H01L21/308 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a display unit reduced in the number of manufacturing steps, and suppressed degradation in characteristics of a film transistor.
SOLUTION: A display unit manufactured by this method is provided with a first thin film transistor formed by sequentially forming a gate electrode, a gate insulating layer, a semiconductor layer of a crystal layer and an amorphous layer, a source electrode, and a drain electrode on the same substrate and a second thin film transistor formed by sequentially forming a gate electrode, a gate insulating film, an amorphous semiconductor layer, a source electrode, and a drain electrode. This manufacturing method includes steps of forming, after the formation of the gate insulating film, an amorphous semiconductor layer on the substrate and also selectively forming a crystalline semiconductor layer to the amorphous semiconductor layer and etching the amorphous semiconductor layer by making the crystalline semiconductor layer remain using an alkali etching solution (etchant) of the amine system.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供减少制造步骤数量的显示单元的制造方法，并且抑制薄膜晶体管的特性的劣化。解决方案：通过该方法制造的显示单元设置有通过顺序地形成栅电极，栅极绝缘层，晶体层的半导体层和非晶层而形成的第一薄膜晶体管，源电极和通过顺序地形成栅电极，栅极绝缘膜，非晶半导体层，源电极和漏电极形成的同一基板上的漏电极和第二薄膜晶体管。该制造方法包括以下步骤：在形成栅绝缘膜之后，在衬底上形成非晶半导体层，并且还通过使晶体半导体层保持在非晶半导体层上并选择性地形成晶体半导体层并蚀刻非晶半导体层使用胺系统的碱蚀刻溶液（蚀刻剂）。版权所有（C）2009，JPO＆INPIT

26. 发明专利

JP2008076431A Display device and its manufacturing method 审中-公开
标题翻译：显示设备及其制造方法
公开(公告)号：JP2008076431A
公开(公告)日：2008-04-03
申请号：JP2006252113
申请日：2006-09-19
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KIMURA TAIICHI , OUE EIJI , KAITO TAKUO , TAKASHINA YUICHIRO , NAKAO TAKAYUKI
IPC分类号： G09F9/00 , G03F7/20 , G03F7/40 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To easily reduce a size of a contact hole in a state that simple miniaturization by an exposure device is difficult.
SOLUTION: In a display device including a substrate and an insulating film formed on the substrate, the insulating film includes a through-hole, and the through-hole is a rectangle shape with four corners rounded on a plane view. In four corner sections, a first corner section and a second corner section positioned at a diagonal position of the first corner section, have larger curvatures than those of remaining third corner section and fourth corner section. The first corner section has about the same curvature as the second corner section, and the third corner section has about the same curvature as the fourth corner section.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：在通过曝光装置的简单的小型化困难的状态下容易地减小接触孔的尺寸。解决方案：在包括形成在基板上的基板和绝缘膜的显示装置中，绝缘膜包括通孔，并且通孔是矩形，其四角在平面图中圆化。在四个角部，位于第一角部的对角位置的第一角部和第二角部具有比剩余的第三角部和第四角部更大的曲率。第一角部具有与第二角部大致相同的曲率，第三角部具有与第四角部大致相同的曲率。版权所有（C）2008，JPO＆INPIT

27. 发明专利

JP2008034407A Display device, and manufacturing method thereof 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：JP2008034407A
公开(公告)日：2008-02-14
申请号：JP2006202712
申请日：2006-07-26
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： NODA TAKASHI , KAMO NAOHIRO , OUE EIJI , HATANO MUTSUKO , SATO TAKESHI
IPC分类号： H01L21/20 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/786
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1248 , H01L27/1285
摘要： PROBLEM TO BE SOLVED: To obtain a system-in-panel display device using a high-performance thin-film transistor by suppressing the aggregation of a melted semiconductor when growing a strip of a psuedo monocrystal continuously, by controlling the direction while irradiating a semiconductor film, such as silicon, with continuous oscillation laser beams by scanning. SOLUTION: The display device comprises: a silicon nitride film 102 formed on an insulating substrate 101, a silicon oxide film 103 formed on the silicon nitride film, a semiconductor film 104 formed on the silicon oxide film 103, and a thin-film transistor using the semiconductor film 104. The silicon oxide film 103 is composed of a first silicon oxide film formed with SiH 4 and N 2 O as feed gas, and a second silicon oxide film formed with TEOS gas as feed gas. The semiconductor film is a psuedo monocrystal, where a crystal particle is in a strip shape. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了通过在连续生长伪单晶条带的同时通过抑制熔融半导体的聚集来获得使用高性能薄膜晶体管的系统内置显示装置，通过控制方向同时通过扫描用连续振荡的激光束照射诸如硅的半导体膜。解决方案：显示装置包括：形成在绝缘基板101上的氮化硅膜102，形成在氮化硅膜上的氧化硅膜103，形成在氧化硅膜103上的半导体膜104，使用半导体膜104的薄膜晶体管。氧化硅膜103由作为进料气体的形成有SiH 4 SB 3和N 2 SB 2的第一氧化硅膜组成，第二氧化硅膜用TEOS气体形成的氧化硅膜作为原料气体。半导体膜是伪晶体，其中晶体颗粒呈带状。版权所有（C）2008，JPO＆INPIT

28. 发明专利

JP2007095726A Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：JP2007095726A
公开(公告)日：2007-04-12
申请号：JP2005279215
申请日：2005-09-27
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAITO TAKUO , OUE EIJI , ITOGA TOSHIHIKO
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/00 , H01L21/20 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/2026 , H01L27/1296 , H01L29/04
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a display device with which yield drop of the display device due to flocculation occurring in pseudo single crystallization of a silicon film is reduced. SOLUTION: The manufacturing method of the display device comprises a semiconductor film reforming process for irradiating a semiconductor film in a first state with a laser, and reforming it into a semiconductor film in a second state which has elongated crystal grains; a flocculation detecting process for detecting flocculation of the semiconductor film which occurs in the semiconductor film reforming process; and a defect judging process for judging it to be defective when a position of flocculation exists in a prescribed region, and judging it to be non-defective when it exists outside the prescribed region. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种显示装置的制造方法，其中由于在硅膜的伪单晶中发生的絮凝导致的显示装置的产量下降降低。解决方案：显示装置的制造方法包括半导体膜重整工艺，用于在第一状态下用激光照射半导体膜，并在具有细长晶粒的第二状态下将其重整成半导体膜; 用于检测在半导体膜重整工艺中发生的半导体膜的絮凝的絮凝检测过程; 以及当在规定区域中存在絮凝位置时将其判断为有缺陷的缺陷判断处理，并且当其存在于规定区域之外时判断为无缺陷。版权所有（C）2007，JPO＆INPIT

29. 发明专利

JP2006019609A Image display unit 审中-公开
标题翻译：图像显示单元
公开(公告)号：JP2006019609A
公开(公告)日：2006-01-19
申请号：JP2004197750
申请日：2004-07-05
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： MATSUMURA MIEKO , HATANO MUTSUKO , ITOGA TOSHIHIKO , OUE EIJI
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/20 , H01L21/336 , H01L51/50
CPC分类号： H01L29/045 , H01L27/1285
摘要： PROBLEM TO BE SOLVED: To obtain a system-in-display of high function and multi-function at a low cost. SOLUTION: High performance and high reliability of a low temperature polysilicon thin film transistor are realized by terminating defect of a polycrystalline silicon interface constituting a gate oxide film/channel by fluorine. To maximize its effect, a material wherein scattering by potential barrier of grain boundary is not dominant, that is, an almost band-like crystalline thin film SPSI wherein grain boundary dividing a channel is little is used in the channel of the thin film transistor. Consequently, it is possible to realize a thin film transistor which has both sharp transmission characteristic and good hot carrier resistance and realizes both high performance and high reliability, to form various circuits which operate rapidly by a low voltage on the same glass substrate as a picture element, and to obtain a high function/multi-function system-in-display at a low cost. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：以低成本获得高功能和多功能的系统显示。解决方案：通过用氟终止构成栅极氧化膜/沟道的多晶硅界面的缺陷，实现了低温多晶硅薄膜晶体管的高性能和高可靠性。为了最大化其效果，通过晶界的势垒散射不是主要的材料，即，在薄膜晶体管的沟道中使用其中分割沟道的晶界小的几乎带状的晶体薄膜SPSI。因此，可以实现具有尖锐的传输特性和良好的热载流子电阻的薄膜晶体管，并且实现了高性能和高可靠性，从而形成在与图像相同的玻璃基板上通过低电压快速操作的各种电路元件，并以低成本获得高功能/多功能系统显示。版权所有（C）2006，JPO＆NCIPI

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