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    • 22. 发明申请
    • Variable-wavelength semiconductor laser and gas sensor using same
    • 可变波长半导体激光器和使用其的气体传感器
    • US20060187976A1
    • 2006-08-24
    • US10548394
    • 2005-02-10
    • Hiroshi MoriTomoyuki KikugawaYoshio TakahashiToshiyuki SuzukiKiyoshi Kimura
    • Hiroshi MoriTomoyuki KikugawaYoshio TakahashiToshiyuki SuzukiKiyoshi Kimura
    • H01S3/10H01S5/20H01S5/00
    • H01S5/12G01J3/433G01N21/39H01S5/02415H01S5/0683H01S5/1039H01S5/227
    • A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 μm to 500 μm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 μm to 2 μm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.
    • 可调波长半导体激光器包括n型半导体衬底,设置在n型半导体衬底上方并产生光的有源层,设置在有源层上方的p型覆层;以及波长选择部分,用于使 从有源层中产生的光中选择性地仅振荡特定波长。 能够以特定波长振荡的可调谐波长半导体层可以通过将有效层注入电流来进行,通过改变电流的大小来改变特定的波长。 表示在有源层中产生的光的传播方向上的长度的器件长度为约200μm至500μm,并且有源层的宽度与在有源层中产生的光的传播方向垂直,并且显示为 在与n型半导体基板平行的方向上的长度为1〜2μm左右。 p型包覆层包括具有低杂质浓度的轻掺杂包层和从有源层侧依次布置的具有高杂质浓度的重掺杂包层。