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    • 27. 发明授权
    • Light emitting device
    • 发光装置
    • US09048399B2
    • 2015-06-02
    • US13037838
    • 2011-03-01
    • Naotoshi MatsudaIwao Mitsuishi
    • Naotoshi MatsudaIwao Mitsuishi
    • H01L33/50C09K11/77H05B33/14
    • H01L33/504C09K11/7734C09K11/7789H01L33/507H01L2224/48091H05B33/14Y02B20/181H01L2924/00014
    • Disclosed is a white light emitting device including a semiconductor light emitting element configured to emit near ultraviolet light having a peak wavelength ranging from 380 to 410 nm, a first phosphor layer and a second phosphor layer. The first phosphor layer contains a blue-emitting phosphor configured to emit blue light by the near ultraviolet light, and a red-emitting phosphor activated by trivalent europium and configured to emit red light by the near ultraviolet light. The second phosphor layer contains a green-emitting phosphor configured to emit green light by the near ultraviolet light. The semiconductor light emitting element, the first phosphor layer and the second phosphor layer are laminated in this order to emit white light.
    • 公开了一种白光发光装置,其包括半导体发光元件,其配置为发射峰值波长范围为380〜410nm的近紫外光,第一荧光体层和第二荧光体层。 第一荧光体层包含配置为通过近紫外光发射蓝光的蓝色发光荧光体和由三价铕激活的红色发光荧光体,并且被配置为通过近紫外光发射红光。 第二荧光体层包含配置为通过近紫外光发射绿光的绿色发光荧光体。 依次层叠半导体发光元件,第一荧光体层和第二荧光体层,发光。