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21. 发明申请

US20090245946A1 CUBIC BORON NITRIDE RADIUS END MILL 有权
公开(公告)号：US20090245946A1
公开(公告)日：2009-10-01
申请号：US12415552
申请日：2009-03-31
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： B26D1/28
CPC分类号： B23C5/10 , B23C2210/0421 , B23C2210/123 , B23C2210/321 , B23C2226/125 , B23C2240/08 , Y10T407/1904 , Y10T407/27
摘要： A cubic boron nitride radius end mill includes a sintered cubic boron nitride compact bonded to an end of a main body, and a cutting edge provided on the sintered cubic boron nitride compact. The wedge angle θt of the cutting edge is constant over the entire region of the cutting edge. A negative rake face is disposed on a face so as to extend over the entire region of the cutting edge, and the rake angle θn of the negative rake face satisfies the relationship −30°≦θn≦−50°. A joint cutting edge is disposed between an end cutting edge and a radius cutting edge in the cutting edge, the joint cutting edge having a concave angle γ0 which is smaller than the concave angle γ1 of the end cutting edge and which satisfies the relationship 0.5°≦γ0 ≦2°.
摘要翻译：立方氮化硼半径立铣刀包括结合到主体的端部的烧结立方氮化硼压块和设置在立方氮化硼烧结体上的切削刃。切削刃的楔角在切削刃的整个区域上是恒定的。负面的前刀面布置在面上，以便在切削刃的整个区域上延伸，并且负前刀面的前倾角满足关系-30°<= t0 <= -50°。在切削刃的端部切削刃和半径切削刃之间配置有切削刃，该切断刃的凹角γ0小于端部切削刃的凹入角度γ1，并且满足0.5°的关系 <= gamma0 <= 2°。

22. 发明授权

US06900144B2 Film-forming surface reforming method and semiconductor device manufacturing method 失效
标题翻译：成膜表面改性法和半导体器件的制造方法
公开(公告)号：US06900144B2
公开(公告)日：2005-05-31
申请号：US09808016
申请日：2001-03-15
申请人： Kazuo Maeda , Setsu Suzuki , Takayoshi Azumi , Kiyotaka Sasaki
发明人： Kazuo Maeda , Setsu Suzuki , Takayoshi Azumi , Kiyotaka Sasaki
IPC分类号： H01L21/20 , C23C16/02 , C23C16/34 , C23C16/40 , H01L21/302 , H01L21/316 , H01L21/31
CPC分类号： C23C16/402 , C23C16/0227 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02307 , H01L21/31612 , H01L21/31654
摘要： A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.
摘要翻译：成膜表面改性方法包括以下步骤：在膜上形成绝缘膜之前，使含有氨，肼，胺，氨基化合物或其衍生物的气体或水溶液与成膜表面接触使含有过氧化氢，臭氧，氧，硝酸，硫酸或其衍生物的气体或水溶液与成膜表面接触。

23. 发明授权

US06750137B1 Method and apparatus for forming an interlayer insulating film and semiconductor device 失效
标题翻译：用于形成层间绝缘膜和半导体器件的方法和装置
公开(公告)号：US06750137B1
公开(公告)日：2004-06-15
申请号：US09519599
申请日：2000-03-06
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01L214763
CPC分类号： H01L21/02129 , H01L21/02203 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31695 , H01L21/76801 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76877 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interlayer insulating film includes the steps of forming an underlying insulating film on a substrate; forming a film containing B (boron), C (carbon) and H2O) on the underlying insulating film by plasma enhanced chemical vapor deposition using a source gas containing an Si—C—O—H compound, an oxidative gas and a compound containing B (boron); releasing C (carbon) and H2O in the film from the film by annealing the film, and thereby forming a porous SiO2 film containing B (boron); and subjecting to the porous SiO2 film containing B (boron) to H (hydrogen) plasma treatment, and then forming a cover insulating film.
摘要翻译：一种用于形成层间绝缘膜的方法包括以下步骤：在衬底上形成下面的绝缘膜; 通过使用含有Si-C-O-H化合物，氧化性气体和含有B（硼）的化合物的源气体的等离子体增强化学气相沉积在底层绝缘膜上形成含有B（硼），C（碳）和H 2 O的膜）通过退火膜从膜中释放膜中的C（碳）和H 2 O，从而形成含有B（硼）的多孔SiO 2膜; 并对含有B（硼）的多孔SiO 2膜进行H（氢）等离子体处理，然后形成覆盖绝缘膜。

24. 发明授权

US06685525B1 Method for manufacturing an incandescent lamp 失效
标题翻译：制造白炽灯的方法
公开(公告)号：US06685525B1
公开(公告)日：2004-02-03
申请号：US09594557
申请日：2000-06-15
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01J900
CPC分类号： H01K3/00 , C03B23/07 , C03B23/092 , C03B23/097 , H01J9/247
摘要： A method for manufacturing an inexpensive lamp, which suppresses distortion of a bulb and prevents decrease in commercial value and breakage of the bulb. In a glass bulb having one end thereof communicating with an exhaust tube, an assembly of a filament, metal foils and lead wires is disposed. In this state, the whole glass bulb is heated by a burner. The end opposite to the exhaust tube of the glass bulb is pinch-sealed to form a pinch-sealed portion. Subsequently, an expanded portion is formed by charging a protective gas from the exhaust tube into the glass bulb.
摘要翻译：一种用于制造便宜的灯的方法，其抑制灯泡的变形并防止商业价值的降低和灯泡的断裂。在其一端与排气管连通的玻璃灯泡中，设置灯丝，金属箔和引线的组装。在这种状态下，整个玻璃灯泡被燃烧器加热。与玻璃灯泡的排气管相对的端部被密封以形成密封部分。随后，通过将来自排气管的保护气体充入玻璃泡来形成膨胀部分。

25. 发明授权

US06642157B2 Film forming method and semiconductor device 有权
标题翻译：成膜方法和半导体器件
公开(公告)号：US06642157B2
公开(公告)日：2003-11-04
申请号：US09742242
申请日：2000-12-22
申请人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
发明人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02274 , C23C16/308 , C23C16/402 , H01L21/02126 , H01L21/02216 , H01L21/31116 , H01L21/3122 , H01L21/3145 , H01L21/31612 , H01L21/31695 , H01L21/76802
摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
摘要翻译：提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

26. 发明授权

US06630412B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06630412B2
公开(公告)日：2003-10-07
申请号：US09897069
申请日：2001-07-03
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/308 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76834
摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

27. 发明授权

US06514884B2 Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same 失效
标题翻译：基面重整方法，半导体装置的制造方法及其制造装置
公开(公告)号：US06514884B2
公开(公告)日：2003-02-04
申请号：US09076744
申请日：1998-05-13
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02164 , C23C16/0218 , C23C16/0236 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/31612
摘要： The present invention relates to a method for reforming a surface of a base layer before thin film deposition, wherein a base thermal SiO2 film is exposed to a gas selected from the group consisting of AX4, AHnCl4−n and ARnX4−n, wherein A represents Si, Ge or Sn, X represents I, Br, F or Cl and R represents CmH2m+1, wherein “n” is 1, 2 or 3 and “m” is a natural number.
摘要翻译：本发明涉及一种在薄膜沉积之前重整基层的表面的方法，其中将基底热SiO 2膜暴露于选自由AX4，AHnCl4-n和ARnX4-n组成的组中的气体，其中A表示 Si，Ge或Sn，X表示I，Br，F或Cl，R表示CmH2m + 1，其中“n”为1,2或3，“m”为自然数。

28. 发明授权

US06500752B2 Semiconductor device and semiconductor device manufacturing method 失效
公开(公告)号：US06500752B2
公开(公告)日：2002-12-31
申请号：US09904869
申请日：2001-07-16
申请人： Taizo Oku , Junichi Aoki , Youichi Yamamoto , Takashi Koromokawa , Kazuo Maeda
发明人： Taizo Oku , Junichi Aoki , Youichi Yamamoto , Takashi Koromokawa , Kazuo Maeda
IPC分类号： H01L214763
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/509 , H01L21/02126 , H01L21/02216 , H01L21/3121 , H01L21/3122 , H01L21/31612 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.

29. 发明授权

US06372670B1 Method and apparatus for forming an interlayer insulating film, and semiconductor device 失效
标题翻译：用于形成层间绝缘膜的方法和装置以及半导体器件
公开(公告)号：US06372670B1
公开(公告)日：2002-04-16
申请号：US09477352
申请日：2000-01-04
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： C23C16/52 , C23C16/402 , C23C16/45561 , C23C16/515 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02362 , H01L21/31695 , H01L21/76801 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L2221/1047
摘要： Disclosed is a method for forming an interlayer insulating film which comprises the steps of forming an underlying insulating film on a substrate; forming a porous SiO2 film on the underlying insulating film by chemical vapor deposition method using Si2H6 and an oxidative gas as a reaction gas; subjecting the porous SiO2 film to H (hydrogen) plasma treatment; forming a plasma SiO2 film and a fluidic SiO2 film formed by TEOS+O3 on the porous SiO2 film; then smoothing a surface of the SiO2 film by etching; and forming a cover insulating film on the smoothed surface.
摘要翻译：公开了一种用于形成层间绝缘膜的方法，包括以下步骤：在基板上形成下面的绝缘膜; 通过使用Si 2 H 6和氧化性气体作为反应气体的化学气相沉积法在下面的绝缘膜上形成多孔SiO 2膜; 将多孔SiO 2膜进行H（氢）等离子体处理; 在多孔SiO 2膜上形成等离子体SiO 2膜和由TEOS + O 3形成的流体SiO 2膜; 然后通过蚀刻来平滑SiO 2膜的表面; 并在平滑的表面上形成覆盖绝缘膜。

30. 发明授权

US6110290A Method for epitaxial growth and apparatus for epitaxial growth 失效
标题翻译：外延生长方法和外延生长装置
公开(公告)号：US6110290A
公开(公告)日：2000-08-29
申请号：US12452
申请日：1998-01-23
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： C30B25/10 , C23C16/44 , C23C16/455 , C23C16/46 , C30B25/02 , C30B25/14 , C30B25/22 , H01L21/205 , C23C14/00
CPC分类号： C30B25/22 , C30B29/06
摘要： This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.
摘要翻译：本发明涉及通过使用所谓的非均相反应进行外延生长的方法，包括将源材料设置在水平室的第一区域中，将生长衬底放置在其第二区域中，加热第一区域从而保持在第一温度下加热第二区域，从而将生长衬底保持在低于第一温度的第二温度，将反应气体引入室中，从而使反应气体与源材料反应并沉积所得反应产物在生长衬底上，从而通过外延生长获得膜的形成。

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