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21. 发明申请

US20060135745A1 Process for refining crude resin for resist 有权
标题翻译：精制粗树脂抗蚀剂的方法
公开(公告)号：US20060135745A1
公开(公告)日：2006-06-22
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：提供了用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。该方法为至少包含溶解在第一有机溶剂（C1）中的抗蚀剂树脂（A）和酰化发生剂（B））的光致抗蚀剂组合物中用于抗蚀剂树脂（A）的粗树脂提供精制方法，其中如果将光致抗蚀剂组合物中组分（A）的浓度标记为X，将包含溶于第二有机溶剂（C2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度）标记为Y，然后（i）制备粗树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

22. 发明授权

US07033731B2 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US07033731B2
公开(公告)日：2006-04-25
申请号：US10901207
申请日：2004-07-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7/11
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案化的新型多层体，当多层结构在基材表面上包含下面的不溶于水的抗蚀剂层时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层，反射膜和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂; （B）0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

23. 发明授权

US06455228B1 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US06455228B1
公开(公告)日：2002-09-24
申请号：US09641686
申请日：2000-08-18
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7004
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案的新型多层体，当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂;（B）0.5至20重量份能够通过照射释放酸的鎓盐化合物与光化射线和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

24. 发明授权

US06864036B2 Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US06864036B2
公开(公告)日：2005-03-08
申请号：US10053622
申请日：2002-01-24
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/0382 , G03F7/0045 , Y10S430/106
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
摘要翻译：公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）酸产生剂和（C）交联剂，其中组分（B）是鎓盐化合物选自碘鎓盐化合物和锍盐化合物，具有特定氟代烷基磺酸根离子作为阴离子部分，组分（C）是通过羟甲基或烷氧基甲基取代至少一个氮原子的特定亚乙基脲化合物。光致抗蚀剂组合物特别适用于在具有良好的图案分辨率的水不溶性有机抗反射膜的底涂层和具有良好温度纬度的图案化抗蚀剂层的正交截面轮廓的基材表面上形成光致抗蚀剂层在用于潜像形成的后曝光烘烤处理中。

25. 发明授权

US06406829B1 Negative-working photoresist composition 有权
标题翻译：负性光刻胶组合物
公开(公告)号：US06406829B1
公开(公告)日：2002-06-18
申请号：US09638872
申请日：2000-08-15
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , Y10S430/128
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
摘要翻译：公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）酸产生剂和（C）交联剂，其中组分（B）是鎓盐化合物具有特定的氟烷基磺酸根离子作为阴离子部分，组分（C）是通过羟甲基或烷氧基甲基取代至少一个氮原子的特定亚乙基脲化合物。光致抗蚀剂组合物特别适用于在具有良好的图案分辨率的水不溶性有机抗反射膜的底涂层和具有良好温度纬度的图案化抗蚀剂层的正交截面轮廓的基材表面上形成光致抗蚀剂层在用于潜像形成的后曝光烘烤处理中。

26. 发明申请

US20050008972A1 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US20050008972A1
公开(公告)日：2005-01-13
申请号：US10901207
申请日：2004-07-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： H01L21/027 , G03F7/038 , G03F7/09 , G03C1/76
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案的新型多层体，当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂; （B）0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

27. 发明授权

US06936400B2 Negative resist composition 失效
标题翻译：负阻抗组成
公开(公告)号：US06936400B2
公开(公告)日：2005-08-30
申请号：US10603511
申请日：2003-06-25
申请人： Ryoichi Takasu , Miwa Miyairi , Jun Iwashita , Toshikazu Tachikawa
发明人： Ryoichi Takasu , Miwa Miyairi , Jun Iwashita , Toshikazu Tachikawa
IPC分类号： C08F8/16 , C08F220/28 , G03F7/038 , H01L21/027 , G03F7/004
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/111
摘要： A negative resist composition is provided which is less likely to swell in an alkali developing solution. An alkali-developable negative resist composition is disclosed comprising a compound (A) which generates an acid upon exposure to radiation, and a resin component (B) which becomes insoluble in alkali under the action of an acid, wherein the component (B) is a resin component containing: (b1) a unit which becomes insoluble in an alkali solution as a result of the formation of a lactone under the action of an acid generated from the component (A), and (b2) a unit having an alcoholic hydroxyl group.
摘要翻译：提供了在碱性显影溶液中不太可能溶胀的负性抗蚀剂组合物。公开了一种碱显影性负性抗蚀剂组合物，其包含在暴露于辐射时产生酸的化合物（A）和在酸的作用下变得不溶于碱的树脂组分（B），其中组分（B）为树脂成分含有：（b1）在由（A）成分产生的酸的作用下由于内酯形成而在碱溶液中不溶的单元，（b2）具有醇羟基的单元组。

28. 发明授权

US06171749B2 Negative-working chemical-amplification photoresist composition 失效
标题翻译：负性化学增幅光刻胶组合物
公开(公告)号：US06171749B2
公开(公告)日：2001-01-09
申请号：US09239798
申请日：1999-01-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Satoshi Fujimura , Miwa Miyairi , Hiroshi Komano , Toshimasa Nakayama
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Satoshi Fujimura , Miwa Miyairi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/106
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.
摘要翻译：公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）辐射敏感性产酸剂和（C）交联剂作为必要成分。特征地，组分（B）是指定比例的产生卤代酸的化合物和双（烷基磺酰基）重氮甲烷化合物的组合。由于该组合物的这种独特配方，光致抗蚀剂组合物可以在高感光度下得到具有优异正交横截面轮廓的图案化抗蚀剂层。

29. 发明授权

US06544712B1 Negative working resist composition 失效
标题翻译：负性抗蚀剂组成
公开(公告)号：US06544712B1
公开(公告)日：2003-04-08
申请号：US09425369
申请日：1999-10-22
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Miwa Miyairi , Masakazu Kobayashi
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Miwa Miyairi , Masakazu Kobayashi
IPC分类号： G03F7038
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/106
摘要： The present invention provides a negative working resist composition comprising a diazosulfonic acid compound capable of generating an acid with irradiation of radiation and an organic amine compound. The negative working resist composition is excellent in sensitivity, resist pattern profile, and aging stability.
摘要翻译：本发明提供一种负性抗蚀剂组合物，其包含能够通过辐射照射产生酸的重氮磺酸化合物和有机胺化合物。负性抗蚀剂组合物的灵敏度，抗蚀剂图案形状和老化稳定性优异。

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