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21. 发明申请

US20070282554A1 INFORMATION PROCESSING APPARATUS, SEMICONDUCTOR MANUFACTURING SYSTEM, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：信息处理设备，半导体制造系统，信息处理方法和存储介质
公开(公告)号：US20070282554A1
公开(公告)日：2007-12-06
申请号：US11754643
申请日：2007-05-29
申请人： Noriaki KOYAMA , Minoru Obata , Wenling Wang
发明人： Noriaki KOYAMA , Minoru Obata , Wenling Wang
IPC分类号： G06F19/00
CPC分类号： G05B23/0221 , G05B2219/32184 , G05B2219/32192 , G05B2219/45031 , Y02P90/22
摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.
摘要翻译：一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理，是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

22. 发明授权

US5466691A Thiophene compound 失效
标题翻译：噻吩化合物
公开(公告)号：US5466691A
公开(公告)日：1995-11-14
申请号：US039100
申请日：1993-03-30
申请人： Tohru Nakao , Yuji Ono , Hiroshi Tanaka , Minoru Obata , Yasuto Morimoto
发明人： Tohru Nakao , Yuji Ono , Hiroshi Tanaka , Minoru Obata , Yasuto Morimoto
IPC分类号： C07D333/20 , C07D333/34 , C07D333/36 , C07D409/06 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D471/20 , C07D495/04 , C07D409/00 , A61K31/445 , A61K31/495 , C07D411/00 , C07D419/00
CPC分类号： C07D409/06 , C07D333/20 , C07D333/34 , C07D333/36 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D495/04
摘要： Thiophene compounds of the formula ##STR1## wherein each symbol is as defined in the specification, their pharmaceutically acceptable salts, pharmaceutical compositions containing said compound and additives for pharmaceuticals, and antipsychotics containing said compound as an active ingredient.The compound of the present invention has pharmacological actions required of antipsychotic, such as motility suppressing action, anti-apomorphine action, mothamphetamine antagonistic action, tetrabenazine-induced blepharoptosis enhancing action, and the like. The compound of the present invention is useful as an antipsychotic having less extrapyramidal side-effects or a non-benzodiazepine type antianxiety agent.
摘要翻译： PCT No.PCP / JP92 / 01002 Sec。 371日期1993年3月30日 102（e）1993年3月30日PCT提交1992年8月5日PCT公布。出版物WO93 / 03025 日期：1993年2月18日。式（I）的噻吩化合物，其中每个符号如说明书中所定义，其药学上可接受的盐，含有所述化合物的药物组合物和药物添加剂以及含有所述化合物作为抗生素的抗精神病药有效成分。本发明的化合物具有抗精神病药所需的药理作用，例如运动抑制作用，抗阿朴吗啡作用，安非他明拮抗作用，丁苯那嗪诱导的睑下垂增生作用等。本发明的化合物可用作具有较少锥体束外副作用的抗精神病药或非苯并二氮类抗焦虑剂。

23. 发明授权

US5418071A Sputtering target and method of manufacturing the same 失效
标题翻译：溅射靶及其制造方法
公开(公告)号：US5418071A
公开(公告)日：1995-05-23
申请号：US12845
申请日：1993-02-04
申请人： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
发明人： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
IPC分类号： B22F3/14 , C04B35/58 , C22C1/05 , C23C14/06 , C23C14/34 , H01L21/28 , H01L21/285 , B22F7/06
CPC分类号： C04B35/58085 , C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414 , Y10T428/12014 , Y10T428/12028 , Y10T428/12049 , Y10T428/12056
摘要： In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
摘要翻译：在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有铝含量为1ppm以下。由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。

24. 发明授权

US5196916A Highly purified metal material and sputtering target using the same 失效
标题翻译：使用相同的高纯度金属材料和溅射目标
公开(公告)号：US5196916A
公开(公告)日：1993-03-23
申请号：US655950
申请日：1991-02-15
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

25. 发明授权

US5184888A Illuminating portion of vanity mirror 失效
标题翻译：透明镜的照明部分
公开(公告)号：US5184888A
公开(公告)日：1993-02-09
申请号：US607449
申请日：1990-10-31
申请人： Toranosuke Sakuma , Minoru Obata
发明人： Toranosuke Sakuma , Minoru Obata
IPC分类号： B60J3/02 , B60Q3/00 , B60Q3/02 , F21V8/00 , G02B6/00
CPC分类号： B60Q3/0226 , B60J3/0282 , B60Q3/004 , G02B6/0086 , G02B6/003 , G02B6/0031 , G02B6/0036 , G02B6/0046 , G02B6/0095
摘要： An illuminating portion of a vanity mirror device disposed in a recessed portion in a body of the vanity mirror device and at one side of a mirror. A light conducting plate formed of a transparent material is fitted in the recessed portion and the front surface of the light conducting plate is located flush with the front surface of the body. And an electric bulb is located to oppose one of end surfaces of the light conducting plate.
摘要翻译：梳妆镜装置的照明部分设置在梳妆镜装置的主体的凹陷部分和反射镜的一侧。由透明材料形成的导光板装配在凹部中，导光板的前表面与本体的前表面齐平。并且电灯被定位成与导光板的一个端面相对。

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