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21. 发明授权

US09160299B2 Acoustic wave element and acoustic wave element sensor 有权
标题翻译：声波元件和声波元件传感器
公开(公告)号：US09160299B2
公开(公告)日：2015-10-13
申请号：US13391416
申请日：2010-08-30
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/25 , H03H9/02 , G01N29/02
CPC分类号： H03H9/0222 , G01N29/022 , G01N2291/0423 , H03H9/02818 , H03H9/02984
摘要： An acoustic wave element includes a piezoelectric body, an input IDT electrode, an output IDT electrode, a propagation path provided between the input IDT electrode and the output IDT electrode, a first dielectric layer provided on the piezoelectric body so as to cover the input IDT electrode and the output IDT electrode, and a reactive portion provided on the propagation path and configured to react to a substance to be detected or a binding substance configured to bind with the substance to be detected. The main acoustic wave becomes, in the input IDT electrode and the output IDT electrode, a boundary acoustic wave that propagates between the piezoelectric body and the first dielectric layer, and becomes, in the propagation path, a surface acoustic wave that propagates on an upper surface of the propagation path.
摘要翻译：声波元件包括压电体，输入IDT电极，输出IDT电极，设置在输入IDT电极和输出IDT电极之间的传播路径，设置在压电体上以覆盖输入IDT的第一介质层电极和输出IDT电极，以及设置在传播路径上并被配置为与待检测物质反应的反应部分或被配置为与待检测物质结合的结合物质。在输入IDT电极和输出IDT电极中，主声波成为在压电体和第一电介质层之间传播的声界面波，并且在传播路径中成为在上部传播的表面声波传播路径的表面。

22. 发明申请

US20120146457A1 ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE ELEMENT SENSOR 有权
标题翻译：声波元件和声波元件传感器
公开(公告)号：US20120146457A1
公开(公告)日：2012-06-14
申请号：US13391416
申请日：2010-08-30
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/08
CPC分类号： H03H9/0222 , G01N29/022 , G01N2291/0423 , H03H9/02818 , H03H9/02984
摘要： An acoustic wave element includes a piezoelectric body, an input IDT electrode, an output IDT electrode, a propagation path provided between the input IDT electrode and the output IDT electrode, a first dielectric layer provided on the piezoelectric body so as to cover the input IDT electrode and the output IDT electrode, and a reactive portion provided on the propagation path and reacting to a substance to be detected or a binding substance that binds with the substance to be detected. The main acoustic wave becomes, in the input IDT electrode and the output IDT electrode, a boundary acoustic wave that propagates between the piezoelectric body and the first dielectric layer, and becomes, in the propagation path, a surface acoustic wave that propagates on an upper surface of the propagation path. With this structure, deterioration of the element characteristic is suppressed.
摘要翻译：声波元件包括压电体，输入IDT电极，输出IDT电极，设置在输入IDT电极和输出IDT电极之间的传播路径，设置在压电体上以覆盖输入IDT的第一介电层电极和输出IDT电极，以及设置在传播路径上并与被检测物质或与待检测物质结合的结合物质反应的反应部分。在输入IDT电极和输出IDT电极中，主声波成为在压电体和第一电介质层之间传播的声界面波，并且在传播路径中成为在上部传播的表面声波传播路径的表面。由此，能够抑制元件特性的劣化。

23. 发明授权

US08482184B2 Plate wave element and electronic equipment using same 有权
标题翻译：平板波元件和电子设备使用相同
公开(公告)号：US08482184B2
公开(公告)日：2013-07-09
申请号：US12999369
申请日：2009-07-08
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/25 , H03H9/02
CPC分类号： H03H9/02559 , H03H9/02228 , H03H9/02574 , H03H9/02834
摘要： A plate wave element includes a piezoelectric body, a comb-shaped electrode disposed on an upper surface of the piezoelectric body, and a medium layer disposed on the upper surface of the piezoelectric body so as to cover the comb-shaped electrode. The comb-shaped electrode excites a Lamb wave as a main wave. The medium layer has a frequency temperature characteristic opposite to that of the piezoelectric body. The plate wave element has a preferable frequency temperature characteristic.
摘要翻译：平板波形元件包括压电体，设置在压电体的上表面上的梳状电极和设置在压电体的上表面上以覆盖梳状电极的介质层。梳状电极激发兰姆波作为主波。介质层具有与压电体相反的频率温度特性。板波元件具有优选的频率温度特性。

24. 发明授权

US08084916B2 Acoustic wave device and electronic equipment using the same 有权
标题翻译：声波装置和电子设备使用相同
公开(公告)号：US08084916B2
公开(公告)日：2011-12-27
申请号：US12552606
申请日：2009-09-02
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/25
CPC分类号： H03H9/02897 , H03H9/0222 , H03H9/02559 , H03H9/02818
摘要： An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.
摘要翻译：声波装置具有：压电体; 布置在压电体上的叉指电极，激发声波; 以及布置在所述压电体上以覆盖所述叉指电极的电介质层。电介质层包括由横波传播速度向上连续增大的介质构成的组成变更部。利用这种配置，可以通过在介电层内部传播的高阶模式将杂散辐射移位到更高的频率，以便减少杂散辐射对高阶模式的影响。

25. 发明授权

US07939988B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US07939988B2
公开(公告)日：2011-05-10
申请号：US12428577
申请日：2009-04-23
申请人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/08
CPC分类号： H03H9/02559 , H03H9/02834
摘要： An acoustic wave device includes a piezoelectric substrate having a surface adapted to allow a leaky surface wave to propagate thereon, an interdigital electrode provided on a portion of the surface of the piezoelectric substrate, and a dielectric layer provided on the surface of the piezoelectric substrate to cover the interdigital electrode. The piezoelectric substrate is made of lithium niobate. The dielectric layer is made of tantalum pentoxide. The piezoelectric substrate is made of a rotated Y-cut substrate having a cut angle which is not smaller than 2.5 degrees and is not larger than 22.5 degrees. A ratio H/λ of a film thickness H of the dielectric layer to a wavelength λ of a center frequency of the leaky surface wave ranges from 0.034 to 0.126. This acoustic wave device works in a wide band width.
摘要翻译：声波装置包括压电基板，其具有适于允许泄漏的表面波传播的表面，设置在压电基板的表面的一部分上的叉指电极和设置在压电基板的表面上的电介质层覆盖指状电极。压电基板由铌酸锂制成。电介质层由五氧化二钽制成。压电基板由具有不小于2.5度且不大于22.5度的切割角度的旋转Y切割基板制成。电介质层的膜厚H与漏表面波的中心频率的波长λ的比H /λ为0.034〜0.126。该声波装置工作在宽带宽。

26. 发明申请

US20100060103A1 SURFACE ACOUSTIC WAVE RESONATOR 有权
标题翻译：表面声波谐振器
公开(公告)号：US20100060103A1
公开(公告)日：2010-03-11
申请号：US12513903
申请日：2007-11-07
申请人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
发明人： Yosuke Hamaoka , Hidekazu Nakanishi , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/205 , H01L41/047 , H01L41/08
CPC分类号： H03H9/02559 , H03H9/1452 , H03H9/25
摘要： A surface acoustic wave resonator of the present invention includes a piezoelectric substrate (10), a first surface acoustic wave resonator (20) having a comb electrode (11) provided on the piezoelectric substrate (10), and a second surface acoustic wave resonator (30) having a comb electrode (12) provided on the piezoelectric substrate (10). The first surface acoustic wave resonator (20) and the second surface acoustic wave resonator (30) are apodized and connected in parallel.
摘要翻译：本发明的声表面波谐振器包括压电基片（10），具有设在压电基片（10）上的梳形电极（11）的第一表面声波谐振器（20）和第二表面声波谐振器 30），其具有设置在所述压电基板（10）上的梳状电极（12）。第一表面声波谐振器（20）和第二声表面波谐振器（30）被并口并联并联。

27. 发明授权

US08598968B2 Elastic wave element and electronic device using the same 有权
标题翻译：弹性波元件及使用其的电子装置
公开(公告)号：US08598968B2
公开(公告)日：2013-12-03
申请号：US13124685
申请日：2009-11-06
申请人： Koji Seo , Hiroyuki Nakamura , Rei Goto
发明人： Koji Seo , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/0222 , H03H9/02818
摘要： An elastic wave device has a convex portion on the top face of a first dielectric layer over an IDT electrode when the elastic wave device has a structure of a boundary wave device in which a film thickness of a second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.
摘要翻译：当弹性波装置具有其中第二电介质层的膜厚度不小于1.6倍的边界波装置的结构时，弹性波装置在IDT电极上的第一电介质层的顶面上具有凸起部分与IDT电极的间距宽度一样多。该凸部增加作为主波的SH波的机电耦合系数。因此，可以容易地实现良好的过滤器特性。

28. 发明申请

US20110204998A1 ELASTIC WAVE ELEMENT AND ELECTRONIC DEVICE USING THE SAME 有权
标题翻译：使用它的弹性波元件和电子器件
公开(公告)号：US20110204998A1
公开(公告)日：2011-08-25
申请号：US13124685
申请日：2009-11-06
申请人： Koji Seo , Hiroyuki Nakamura , Rei Goto
发明人： Koji Seo , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/64
CPC分类号： H03H9/0222 , H03H9/02818
摘要： Offers elastic wave device that has convex portion on the top face of first dielectric layer over IDT electrode when elastic wave device has a structure of a boundary wave device in which a film thickness of second dielectric layer is not less than 1.6 times as much as pitch width p of IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.
摘要翻译：提供弹性波装置，当弹性波装置具有第二介电层的膜厚度不小于第二介质层的1.6倍的边界波装置的结构时，在IDT电极上的第一电介质层的顶面上具有凸部 IDT电极的宽度p。该凸部增加作为主波的SH波的机电耦合系数。因此，可以容易地实现良好的过滤器特性。

29. 发明申请

US20120049690A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20120049690A1
公开(公告)日：2012-03-01
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/02
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波器件防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

30. 发明授权

US08421307B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US08421307B2
公开(公告)日：2013-04-16
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/08
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波装置防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

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