专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07985683B2 Method of treating a semiconductor substrate 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US07985683B2
公开(公告)日：2011-07-26
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/312
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

22. 发明申请

US20110143541A1 APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：US20110143541A1
公开(公告)日：2011-06-16
申请号：US12886427
申请日：2010-09-20
申请人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/308 , B08B3/08 , B08B3/02
CPC分类号： H01L21/0206 , H01L21/02043 , H01L21/02211 , H01L21/31116 , H01L21/32135 , H01L21/67028
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.
摘要翻译：在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。去除单元除去留下凸起图案的防水保护膜。

23. 发明申请

US20100075504A1 METHOD OF TREATING A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US20100075504A1
公开(公告)日：2010-03-25
申请号：US12574543
申请日：2009-10-06
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

24. 发明授权

US07097784B2 Etching method and apparatus for semiconductor wafers 失效
标题翻译：半导体晶片的蚀刻方法和装置
公开(公告)号：US07097784B2
公开(公告)日：2006-08-29
申请号：US10742992
申请日：2003-12-23
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
摘要翻译：一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

25. 发明授权

US09177781B2 Plasma processing method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的等离子体处理方法和制造方法
公开(公告)号：US09177781B2
公开(公告)日：2015-11-03
申请号：US13178759
申请日：2011-07-08
申请人： Shigeru Tahara , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： H01L21/02
CPC分类号： H01L21/02071
摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.
摘要翻译：进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

26. 发明申请

US20130154087A1 METHOD FOR FORMING INTERCONNECTION PATTERN AND SEMICONDUCTOR DEVICE 有权
标题翻译：形成互连模式和半导体器件的方法
公开(公告)号：US20130154087A1
公开(公告)日：2013-06-20
申请号：US13526216
申请日：2012-06-18
申请人： Yasuhito YOSHIMIZU , Satoshi Wakatsuki , Hisashi Okuchi , Atsuko Sakata , Hiroshi Tomita
发明人： Yasuhito YOSHIMIZU , Satoshi Wakatsuki , Hisashi Okuchi , Atsuko Sakata , Hiroshi Tomita
IPC分类号： H01L21/768 , H01L23/535
CPC分类号： C23C18/1608 , C23C18/1893 , C23C18/32 , H01L21/4846 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L28/91
摘要： According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.
摘要翻译：根据一个实施例，用于形成互连图案的方法包括形成绝缘图案，形成自组装膜并形成导电层。绝缘图案在矩阵的主表面上具有侧表面。自组装膜与绝缘图案的侧面上的绝缘图案的材料具有亲和性。形成导电层包括在自组装膜的侧表面上沉积导电材料。

27. 发明申请

US20100210110A1 ETCHING APPARATUS, A METHOD OF CONTROLLING AN ETCHING SOLUTION, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：蚀刻装置，控制蚀刻溶液的方法和制造半导体器件的方法
公开(公告)号：US20100210110A1
公开(公告)日：2010-08-19
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

28. 发明申请

US20090311874A1 METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：处理半导体衬底表面的方法
公开(公告)号：US20090311874A1
公开(公告)日：2009-12-17
申请号：US12257493
申请日：2008-10-24
申请人： Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
发明人： Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
IPC分类号： H01L21/31
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.
摘要翻译：处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板，通过使用纯水去除化学溶液，在半导体基板的表面上形成防水保护膜，冲洗通过使用纯水对半导体衬底进行干燥，并干燥半导体衬底。

29. 发明申请

US20060255014A1 Etching method and apparatus for semiconductor wafers 审中-公开
公开(公告)号：US20060255014A1
公开(公告)日：2006-11-16
申请号：US11490054
申请日：2006-07-21
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

30. 发明授权

US08435903B2 Semiconductor substrate surface treatment method 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US08435903B2
公开(公告)日：2013-05-07
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式