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21. 发明授权

US06888171B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06888171B2
公开(公告)日：2005-05-03
申请号：US09748801
申请日：2000-12-22
申请人： Heng Liu , Changhua Chen
发明人： Heng Liu , Changhua Chen
IPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , H01L33/38 , H01L27/15 , H01L29/12 , H01L29/40
CPC分类号： H01L33/38 , H01L33/145 , H01L33/20 , H01L33/32
摘要： A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.
摘要翻译：半导体发光二极管包括形成在基板的同一侧上的紧密间隔的n电极和p电极，以形成具有小脚印的LED。半透明的U形p接触层沿着下面的窗口层的顶表面的三个侧面形成。 p电极形成在以U形层的封闭端为中心的p接触层上。 n接触层形成在n包覆层上并且位于p接触层的U的开口端的中心。 n电极形成在n接触层上。 n和p电极通过位于电极之间的沟槽或绝缘体彼此电隔离。

22. 发明授权

US06650018B1 High power, high luminous flux light emitting diode and method of making same 有权
标题翻译：大功率，高光通量发光二极管及其制作方法
公开(公告)号：US06650018B1
公开(公告)日：2003-11-18
申请号：US10155001
申请日：2002-05-24
申请人： Yongsheng Zhao , William W. So , Kevin Y. Ma , Chyi S. Chern , Heng Liu , Eugene J. Ruddy
发明人： Yongsheng Zhao , William W. So , Kevin Y. Ma , Chyi S. Chern , Heng Liu , Eugene J. Ruddy
IPC分类号： H01L3300
CPC分类号： H01L33/38 , H01L33/20 , H01L2933/0016
摘要： A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.
摘要翻译：高功率，高光通量发光二极管（LED）包括基板，发光结构，第一电极和第二电极。 LED具有顶表面布局设计，其中第一电极具有沿一个方向延伸的多个支脚，并且第二电极具有沿相反方向延伸的多个支脚。第一电极的腿部的至少部分与第二电极的腿的部分分开并间隔开。这提供了增强沿着两个电极的腿的长度的电流扩散的配置。

23. 发明授权

US08574936B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08574936B2
公开(公告)日：2013-11-05
申请号：US13116765
申请日：2011-05-26
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L27/15 , H01L33/22 , H01L33/06
CPC分类号： H01L27/153 , H01L33/0079 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.
摘要翻译：一种制造半导体发光器件的方法包括：（a）提供临时衬底; （b）在所述临时衬底上形成具有至少一个发光单元的多层LED外延结构，其中所述发光单元的第一表面接触所述临时衬底，并且所述发光单元包括n型层，有源区和p型层; （c）在n型层上形成n电极; （d）在p型层上形成p电极; （e）在发光单元，n电极和p电极上键合永久性基板; （f）去除临时衬底以露出发光单元; 和（g）蚀刻暴露的发光单元，以暴露n电极和p电极中的至少一个。

24. 发明授权

US08546829B2 Posts in glue layer for group-III nitride LEDs 有权
标题翻译： III-III族氮化物LED胶层的柱
公开(公告)号：US08546829B2
公开(公告)日：2013-10-01
申请号：US13185845
申请日：2011-07-19
申请人： Ray-Hua Horng , Heng Liu , Yi-An Lu
发明人： Ray-Hua Horng , Heng Liu , Yi-An Lu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/641
摘要： A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure.
摘要翻译：对半导体发光元件及半导体发光元件的制造方法进行说明。半导体发光器件包括具有第一类型掺杂层，发光层和第二类型掺杂层的外延结构。外延结构还可以包括未掺杂的层。用粘合剂层将衬底结合到外延结构的至少一个表面。一个或多个柱位于粘合剂层中。柱可以具有不同的宽度，这取决于柱的位置和/或柱可以仅位于外延结构的特定部分之下。

25. 发明授权

US08502239B2 High power allngan based multi-chip light emitting diode 有权
标题翻译：大功率全能多芯片发光二极管
公开(公告)号：US08502239B2
公开(公告)日：2013-08-06
申请号：US11272366
申请日：2005-11-10
申请人： Heng Liu
发明人： Heng Liu
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , F21L4/027 , F21Y2115/10 , H01L25/0753 , H01L27/156 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/60 , H01L2224/48091 , H01L2224/48137 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
摘要翻译：具有基本上透明的基板并且具有限定细长几何形状的纵横比的发光二极管芯片提供增强的效率和亮度。还公开了其形成和操作方法。

26. 发明申请

US20120193652A1 LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS 审中-公开
标题翻译： LED阵列由互连和周边LED灯形成
公开(公告)号：US20120193652A1
公开(公告)日：2012-08-02
申请号：US13287542
申请日：2011-11-02
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L24/24 , H01L33/54 , H01L33/62 , H01L33/641 , H01L2224/24137 , H01L2224/73267 , H01L2924/12041 , H01L2924/15788 , H01L2933/0066 , H01L2924/00
摘要： A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect).
摘要翻译：发光二极管阵列包括具有第一电极的第一发光二极管和具有第二电极的第二发光二极管。第一和第二发光二极管被分离。第一聚合物层位于发光二极管之间。至少部分地位于第一聚合物层上的互连将第一电极连接到第二电极。永久基板耦合到发光二极管。永久性基板通过互连件耦合到发光二极管的侧面。第二聚合物层至少部分地封装与永久基板相对的发光二极管的侧面（与互连件相对的一侧）。

27. 发明授权

US08193546B2 Light-emitting-diode array with polymer between light emitting devices 有权
标题翻译：具有聚合物的发光二极管阵列在发光器件之间
公开(公告)号：US08193546B2
公开(公告)日：2012-06-05
申请号：US12948504
申请日：2010-11-17
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L21/00 , H01L21/44 , H01L29/207 , H01L29/06 , H01L23/48
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L27/156 , H01L33/50 , H01L33/56 , H01L33/62 , H01L2924/01012 , H01L2924/01029 , H01L2924/12041 , H01L2924/00
摘要： A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first and the second LED device are formed on a common substrate and are separated by a gap. At least one polymer material substantially fills the gap. An interconnect, formed on top of the at least one polymer material, electrically connects the first electrode and the second electrode.
摘要翻译：发光二极管（LED）阵列包括具有第一电极的第一LED器件和具有第二电极的第二LED器件。第一和第二LED器件形成在公共衬底上并被间隙隔开。至少一种聚合物材料基本上填充该间隙。在所述至少一种聚合物材料的顶部上形成的互连电连接所述第一电极和所述第二电极。

28. 发明申请

US20110092005A1 LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管阵列及其制造方法
公开(公告)号：US20110092005A1
公开(公告)日：2011-04-21
申请号：US12975068
申请日：2010-12-21
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L2224/16225 , H01L2224/16227 , H01L2224/24137 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2933/0066
摘要： A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap, removing portions of the at least one polymer material to expose a first electrode of the first LED device and a second electrode of the second LED device, and forming an interconnect on top of the at least one polymer material electrically connecting the first and second electrode.
摘要翻译：公开了一种用于形成发光二极管（LED）阵列的方法，其包括在衬底上形成LED结构，将LED结构分成具有间隙的至少第一和第二LED器件，沉积至少一种聚合物材料在所述LED结构上基本上填充所述间隙，去除所述至少一种聚合物材料的部分以暴露所述第一LED器件的第一电极和所述第二LED器件的第二电极，以及在所述至少一种聚合物的顶部上形成互连电连接第一和第二电极的材料。

29. 发明申请

US20110089437A1 CROSS FLOW CVD REACTOR 有权
标题翻译：交流CVD反应器
公开(公告)号：US20110089437A1
公开(公告)日：2011-04-21
申请号：US12978842
申请日：2010-12-27
申请人： Vahid S. Moshtagh , Heng Liu , Jeffery Ramer , Michael Solomensky
发明人： Vahid S. Moshtagh , Heng Liu , Jeffery Ramer , Michael Solomensky
IPC分类号： H01L33/00 , C23C16/455
CPC分类号： C23C16/4412 , C23C16/45504 , C23C16/45574 , C23C16/4584 , C30B25/02 , C30B25/14 , C30B29/40 , C30B29/406
摘要： A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated.
摘要翻译：交叉流化学气相沉积室可以包括具有大致矩形横截面的入口管道和具有大致矩形横截面的出口管道。矩形入口管道和矩形出口管道可以促进反应气体在基座上的层流。活动隔板可以被配置为在腔室内限定多个区域。每个区域可以包含不同的反应气体，反应气体的浓度和/或反应气体的流速。可以提供增强的层流，可以减轻反应气体的不期望的消耗，并且可以促进反应气体的增强控制。

30. 发明授权

US07781780B2 Light emitting diodes with smooth surface for reflective electrode 有权
标题翻译：用于反射电极的光滑表面的发光二极管
公开(公告)号：US07781780B2
公开(公告)日：2010-08-24
申请号：US12120051
申请日：2008-05-13
申请人： Chao-Kun Lin , Heng Liu
发明人： Chao-Kun Lin , Heng Liu
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/24 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
摘要翻译：一种发光二极管，包括外延层结构，第一电极和第二电极。第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。

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