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    • 24. 发明申请
    • METHOD FOR MANUFACTURING PIXEL STRUCTURE
    • 制造像素结构的方法
    • US20080176346A1
    • 2008-07-24
    • US11942732
    • 2007-11-20
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • H01L33/00
    • H01L27/1288G02F1/136227H01L27/1214H01L27/3248H01L51/5206H01L51/56H01L2227/323
    • A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. Then, an uneven first photoresist layer having an opening is formed over the active device. After an etching process is implemented to form a contact hole in the dielectric layer through said opening, a thickness of the first photoresist layer is reduced so as to expose a portion of the dielectric layer. A transparent conductive layer covering the exposed dielectric layer and the remained first photoresist layer is formed and electrically connected to the active device via the contact hole. Thereafter, the transparent conductive layer on the remained first photoresist layer is removed, while the transparent conductive layer on the exposed dielectric layer forms a pixel electrode. Then, the remained first photoresist layer is removed. With fewer photomasks, the method reduces the manufacturing costs.
    • 一种用于制造像素结构的方法包括提供其上具有有源器件的衬底,并形成覆盖有源器件的介电层。 然后,在有源器件上形成具有开口的不均匀的第一光致抗蚀剂层。 在通过所述开口实现在电介质层中形成接触孔的蚀刻工艺之后,减小第一光致抗蚀剂层的厚度以暴露电介质层的一部分。 覆盖暴露的电介质层和残留的第一光致抗蚀剂层的透明导电层被形成并经由接触孔与有源器件电连接。 此后,去除残留的第一光致抗蚀剂层上的透明导电层,而暴露的电介质层上的透明导电层形成像素电极。 然后,除去残留的第一光致抗蚀剂层。 使用较少的光掩模,该方法降低了制造成本。
    • 26. 发明申请
    • METHOD FOR MANUFACTURING PIXEL STRUCTURE
    • 制造像素结构的方法
    • US20090104722A1
    • 2009-04-23
    • US12342026
    • 2008-12-22
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • H01L21/77
    • H01L27/1288G02F1/136227H01L27/1214H01L27/3248H01L51/5206H01L51/56H01L2227/323
    • A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed.
    • 一种用于制造像素结构的方法包括提供其上具有有源器件的衬底,并形成覆盖有源器件的介电层。 电介质层具有设置在有源器件上方的接触孔。 接下来,在有源器件上的介电层上形成第一光致抗蚀剂层,并且形成透明导电层以覆盖电介质层和第一光致抗蚀剂层的一部分。 透明导电层经由接触孔与有源器件电连接。 此外,使用激光束照射透明导电层,并且去除第一光致抗蚀剂层上的透明导电层的一部分,使得介电层部分上的透明导电层的另一部分形成 像素电极。 然后去除第一图案化光致抗蚀剂层。
    • 27. 发明授权
    • Method for manufacturing pixel structure
    • 像素结构制造方法
    • US08008135B2
    • 2011-08-30
    • US12342026
    • 2008-12-22
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • H01L21/20
    • H01L27/1288G02F1/136227H01L27/1214H01L27/3248H01L51/5206H01L51/56H01L2227/323
    • A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed.
    • 一种用于制造像素结构的方法包括提供其上具有有源器件的衬底,并形成覆盖有源器件的介电层。 电介质层具有设置在有源器件上方的接触孔。 接下来,在有源器件上的介电层上形成第一光致抗蚀剂层,并且形成透明导电层以覆盖电介质层和第一光致抗蚀剂层的一部分。 透明导电层经由接触孔与有源器件电连接。 此外,使用激光束照射透明导电层,并且去除第一光致抗蚀剂层上的透明导电层的一部分,使得介电层部分上的透明导电层的另一部分形成 像素电极。 然后去除第一图案化光致抗蚀剂层。
    • 28. 发明授权
    • Method for manufacturing pixel structure
    • 像素结构制造方法
    • US07670883B2
    • 2010-03-02
    • US11942732
    • 2007-11-20
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • H01L21/20
    • H01L27/1288G02F1/136227H01L27/1214H01L27/3248H01L51/5206H01L51/56H01L2227/323
    • A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. Then, an uneven first photoresist layer having an opening is formed over the active device. After an etching process is implemented to form a contact hole in the dielectric layer through said opening, a thickness of the first photoresist layer is reduced so as to expose a portion of the dielectric layer. A transparent conductive layer covering the exposed dielectric layer and the remained first photoresist layer is formed and electrically connected to the active device via the contact hole. Thereafter, the transparent conductive layer on the remained first photoresist layer is removed, while the transparent conductive layer on the exposed dielectric layer forms a pixel electrode. Then, the remained first photoresist layer is removed. With fewer photomasks, the method reduces the manufacturing costs.
    • 一种用于制造像素结构的方法包括提供其上具有有源器件的衬底,并形成覆盖有源器件的介电层。 然后,在有源器件上形成具有开口的不均匀的第一光致抗蚀剂层。 在通过所述开口实现在电介质层中形成接触孔的蚀刻工艺之后,减小第一光致抗蚀剂层的厚度以暴露电介质层的一部分。 覆盖暴露的电介质层和残留的第一光致抗蚀剂层的透明导电层被形成并经由接触孔与有源器件电连接。 此后,去除残留的第一光致抗蚀剂层上的透明导电层,而暴露的电介质层上的透明导电层形成像素电极。 然后,除去残留的第一光致抗蚀剂层。 使用较少的光掩模,该方法降低了制造成本。