专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPH06250833A METHOD FOR PROCESSING DATA ITEM INFORMATION DEALING WITH MULTILANGUAGE 失效
公开(公告)号：JPH06250833A
公开(公告)日：1994-09-09
申请号：JP3627393
申请日：1993-02-25
申请人： HITACHI LTD , HITACHI SEIBU SOFTWARE KK
发明人： TANAKA HITOSHI , KUSHIRO YASUO
IPC分类号： G06F9/06
摘要： PURPOSE:To provide a multilanguage dealing data item information processing method capable of eliminating necessity for an operator to learn an operation language newly in a software developing environment for operating plural programming languages and preventing resources from being duplicated. CONSTITUTION:The multilanguage dealing data item information processing method is characterized by dynamically changing an operation screen depending upon a certain programming language to an operation screen depending upon another programming language by starting conversion processing to a specified programming language in data item dictionary shared operation for storing data item dictionary information inputted by the format of an optional programming language specification in a data item dictionary 21 by the format of dictionary item data by using an operation screen of programming language itself in a system for managing and operating the information of a data item to be used for development by means of the dictionary 21, and when a programming language specified at the time of starting the dictionary 21 is different from a current programming language, executing processing depending upon the physical structure of the dictionary 21.

22. 发明专利

JPH06102949A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH06102949A
公开(公告)日：1994-04-15
申请号：JP8969193
申请日：1993-04-16
申请人： HITACHI LTD , HITACHI MICOM SYST KK
发明人： HORI RYOICHI , ITO KIYOO , TANAKA HITOSHI
IPC分类号： G05F3/24 , G11C11/407 , H01L21/8234 , H01L27/06 , H02J1/00 , H03K19/00
摘要： PURPOSE:To provide a semiconductor integrated circuit which can prevent voltage fluctuation when current which is comparatively large is made to flow into internal circuits from an internal voltage generation means. CONSTITUTION:The internal circuits A and LC1 including MOS transistors, the internal voltage generation means 13 on which external power voltage VCC are impressed and which generates internal voltage VL whose absolute value is smaller than VCC and a supply means Q4 supplying internal voltage VL to the internal circuits A and LC1 are provided on a chip 10. At the time of making comparatively large current to flow into the internal circuits A and LCI, the supply means Q4 improves the supply driving capacity of internal voltage to the internal circuits A and LC1 in accordance with a control signal phi1. Since the driving capacity of the supply means Q4 is enlarged at the time of making comparatively large current to flow into the internal circuits A and LC1, the voltage fluctuation of internal voltage VL supplied to the internal circuits A and LC1 can be prevented.

23. 发明专利

JPH03273594A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03273594A
公开(公告)日：1991-12-04
申请号：JP14628390
申请日：1990-06-06
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： NAKAGOME YOSHINOBU , ITO KIYOO , TANAKA HITOSHI , WATANABE YASUSHI , KUME EIJI , ISODA MASANORI , YAMAZAKI EIJI
IPC分类号： G11C11/413 , G11C11/401 , G11C11/407 , G11C11/409 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To enable stable operations even with the electromotive force of a power supply voltage for only one battery by increasing a data line voltage at all times so as to use it as the power source of a word driver. CONSTITUTION:Word line drive is executed with a voltage conversion circuit VLG, which converts the data line power supply voltage to a certain voltage higher than the data line voltage by the threshold voltage of a switch transistor in a memory cell array MA, and a static word driver VCHG to be operated with the output of the voltage conversion circuit VLG as the power source. Thus, the voltage higher than the data line voltage by the threshold voltage of the switch transistor in the memory cell array can be impressed as the word line voltage and even when the power supply voltage is lowered to about 1V, the memory operation can be made stable as well.

24. 发明专利

JPS62275386A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPS62275386A
公开(公告)日：1987-11-30
申请号：JP11737486
申请日：1986-05-23
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： IWAI HIDETOSHI , MIYAZAWA KAZUYUKI , SAKUTA TOSHIYUKI , KIMURA KATSUTAKA , SHIMOHIGASHI KATSUHIRO , ETO JUN , TANAKA HITOSHI
IPC分类号： G11C11/401 , G11C11/34 , G11C29/00 , G11C29/14
摘要： PURPOSE:To easily recognize the occurrence of errors in a test mode by receiving signals read out of a memory arrays every plural bits to detect the coincidence or disagreement of these signals and transmitting the output signal having a medium level between the output high and low levels to an external output terminal by the dissident output. CONSTITUTION:A test circuit contained in a data input circuit DIB sets all multiplexers MPX in the selection states while the test circuit is active and then transmits write signals supplied from an external terminal Din to common complementary data lines CD0-CD3. Thus the same signals are written simultaneously in the unit of four apparent bits into four memory cells set in the selection states in a memory array M-ARY. In other words, the test circuit produces the output signal of a high or low level by an output circuit if the 4-bit read signals are coincident with each other at a high or low level. Then an output terminal Dout is set at an intermediate level if the 4-bit read signal is disagreement even with a single bit.

25. 发明专利

JPS62121990A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62121990A
公开(公告)日：1987-06-03
申请号：JP26121385
申请日：1985-11-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TANAKA HITOSHI , HORI RYOICHI , ITO KIYOO , KIMURA KATSUTAKA , SHIMOHIGASHI KATSUHIRO
IPC分类号： G11C11/407 , G05F1/46 , G11C11/401 , G11C11/4074 , G11C11/409
摘要： PURPOSE:To stably operate a load, to reduce the power consumption of a limiter and to prevent a feedback loop from being delayed by providing an exclusively used limiter in accordance with the type of the load and permitting each limiter to set drive ability in accordance with the load. CONSTITUTION:In accordance with the type of loads Z1-Zn, the exclusively used limiters CC1-CCn are provided to which feedback voltages from reference voltage generator circuits VR1-VRn and the loads Z1-Zn are supplied. With this constitution, interference between the loads does not occur, and the loads stably operate. The drive time, etc., of the limiter can be set based on the load, and its action is stopped in disuse to reduce power consumption. Moreover a feedback loop can be designed in accordance with the load, and a delay by the feedback loop can be prevented.

26. 发明专利

JPS6299989A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS6299989A
公开(公告)日：1987-05-09
申请号：JP23978285
申请日：1985-10-25
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： ITO KIYOO , KAWAJIRI YOSHIKI , KIMURA KATSUTAKA , HORI RYOICHI , TANAKA HITOSHI
IPC分类号： G11C11/401 , G11C11/34 , G11C11/409
摘要： PURPOSE:To make the parasitic capacity and chip area of a semiconductor memory small so as to reduce the power consumption and improve the S/N, by dividing both data lines and the 1st I/O line into multiple parts. CONSTITUTION:Data pair lines are divided into sub-data pair lines (D00, D'00) - (D30, D'30), etc., and two sets of pair lines (D00, D'00) and (D10, D'10) constitute a sub-array MA0. Similarly, sub-arrays MA1-MA3 are constituted of plural sub-data pair lines. A sense amplifier SA is commonly connected with two sub-arrays MA0 and MA1 or MA2 and MA3 by the 1st I/O lines i/o(0), i'/o'(0), etc., and commonly controlled by Y-decoder output lines YS0 and YS1. The sense amplifier SA communicates information with the 2nd I/O lines I/O(0), I'/O'(0), etc., under this condition.

27. 发明专利

JP2002207760A DOCUMENT RETRIEVAL METHOD, EXECUTING DEVICE THEREOF, AND STORAGE MEDIUM WITH ITS PROCESSING PROGRAM STORED THEREIN 失效
公开(公告)号：JP2002207760A
公开(公告)日：2002-07-26
申请号：JP2001002810
申请日：2001-01-10
申请人： HITACHI LTD
发明人： KANIE HOMARE , TOKUNAGA MIKIHIKO , TANAKA HITOSHI
IPC分类号： G06F17/30
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of retrieving a proper related word according to a user's intension and improving the efficiency of a document retrieval work. SOLUTION: This document retrieval method for retrieving a desired document from a document database by use of a keyword comprises the step of extracting a related word related to the inputted keyword and the effective period of the related word; the step of performing the retrieval of document by use of the extracted related word as a retrieval word, and the step of selecting a document within the extracted effective period from the retrieved documents.

28. 发明专利

JP2001035161A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001035161A
公开(公告)日：2001-02-09
申请号：JP2000108803
申请日：2000-04-11
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： TANAKA HITOSHI
IPC分类号： G11C11/407 , G11C11/408 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To reduce the applied voltage of a first MOSFET to improve reliability by connecting a same electrically conductive type MOSFET in series with the first MOSFET, to which a prescribed voltage of a power supply voltage is applied between the drain and the source in a charge pump, and giving a potential, which is lower for the amount of the power supply voltage than the drain potential before the connection, to the gate. SOLUTION: A rectifying circuit RC, which outputs a boosting voltage Vpp, is supplied with an output 3VDD (VDD: a power supply voltage) of a second boosting circuit BC2. The circuit BC2 is provided with a capacitor CB4, a MOSFET M7, which precharges the capacitor CB4, a breakdown relaxing MOSFET M14 and a rectifying MOSFET M13. When a node N5 is put to the output 3VDD, an output ϕ3 of a first boosting circuit BC1 is inputted to the gate of the MOSFET M14 so that the voltage between the source and the drain of the MOSFET M7 is reduced to VDD-VTN instead of 2VDD.

29. 发明专利

JP2000306380A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2000306380A
公开(公告)日：2000-11-02
申请号：JP11436099
申请日：1999-04-22
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： TAKAHIRA TOSHIAKI , SASAKI TOSHIO , YASU YOSHIHIKO , YANAGISAWA KAZUMASA , TANAKA YUJI , IGARASHI YASUTO , TANAKA HITOSHI , OTSUKA MARIKO
IPC分类号： G11C11/407 , G11C11/401
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit device in which a charge pumping operation can be performed with good efficiency up to a low-voltage region by a charging up an electric charge in a first capacitor by a precharging circuit and, when the electric charge is transferred to a second capacitor via a transfer gate, constituting any one of two circuits of a circuit in which a P-channel MOSFET and an N-channel MOSFET are connected in parallel. SOLUTION: A transfer gate which outputs a step-up voltage which is formed by a step-up part is constituted in such a way that a P-channel MOSFET and an N-channel MOSFET are connected in parallel. The step-up part is constituted of a capacitor C0 and an inverter circuit. An N-channel transfer MOSFET is set to an ON state by a double step-up voltage 2 vdd which is formed of a circuit composed of a capacitor C1 and a capacitor C2 as well as an N- channel MOSFET Q1 and an N-channel MOSFET Q2 in a latch shape, and an output operation is performed. A P-channel transfer-gate MOSFET is switched and controlled by a circuit which is formed of a P-channel MOSFET in a latch shape and a capacitor, and an output operation is performed.

30. 发明专利

JP2000223673A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2000223673A
公开(公告)日：2000-08-11
申请号：JP2663499
申请日：1999-02-03
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： TODOKORO MASAYA , YAMAZAKI EIJI , SUZUKI TSUYUKI , TANAKA HITOSHI
IPC分类号： G11C11/407 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To realize high reliability and high integration by employing a thin gate insulation film having required breakdown strength for MOSFETs and capacitors in each circuit element where only a power supply voltage is applied to the gate insulation film and employing a thick gate insulation film for those where a voltage two times as high as the power supply voltage is applied to the gate insulation film. SOLUTION: Voltages being applied to respective elements constituting a boosted voltage generating circuit is sorted into two types of VDD and 2VDD wherein a thin gate insulation film is employed in MOSFET Q3, TQ4, Q8, Q9 and MOS capacitors C1-6 being applied only with VDD. A thick gate insulation film is employed in the MOSFETs Q1, Q2, Q5, Q11, Q12 in first booster circuit and the MOSFETs Q6, Q7, Q10 in second booster circuit being applied with a large voltage such as 2VDD thus ensuring a required breakdown strength of element.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式