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21. 发明专利

JPH02250373A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02250373A
公开(公告)日：1990-10-08
申请号：JP7068389
申请日：1989-03-24
申请人： HITACHI LTD
发明人： YAMANAKA TOSHIAKI , SAKAI YOSHIO , HASHIMOTO KOJI , NISHIDA TAKASHI , MEGURO SATOSHI , IKEDA SHUJI , TAKEDA EIJI
IPC分类号： G11C11/412 , H01L21/8244 , H01L27/11
摘要： PURPOSE:To reduce leak current by a method wherein a first conductive film specified between sources, drains and channel regions, and between drain regions and the channel regions, a second insulation film and a second conductive film are sequentially formed. CONSTITUTION:A second insulated gate field effect transistor is fabricated by sequentially laminating a first conductive film including sources 27a, 27b, drains 27c, 27d, channel regions 27g, 27h, and a first resistance regions 27e, 27f provided between the drain regions 27c, 27d and the channel regions 27g, 27h and doped with impurity of a second conductivity type at a concentration lower than that of the drain regions 27c, 27d or doped with no impurity at all, a second insulation film comprising a gate insulation film, and a second conductive film to serve as gate electrode 25a, 25b. Further the first resistance regions 27e, 27f are located on gate electrodes 17a to 17d of a first insulated gate field effect transistor. Thus leak current can be reduced with a small area as well as operation with low voltage is possible.

22. 发明专利

JPS6352097A BOILING WATER TYPE REACTOR 失效
公开(公告)号：JPS6352097A
公开(公告)日：1988-03-05
申请号：JP19664586
申请日：1986-08-22
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： YAMANARI SHOZO , MIURA SATOSHI , MATSUMOTO MASAKI , HASHIMOTO KOJI
IPC分类号： G21C15/00 , G21C7/26 , G21C15/02 , G21C15/16 , G21D3/08 , G21D3/12 , G21D3/14

23. 发明专利

JPS62211588A TURBINE HOUSING FOR BOILING WATER TYPE NUCLEAR POWER FACILITY 失效
公开(公告)号：JPS62211588A
公开(公告)日：1987-09-17
申请号：JP5250686
申请日：1986-03-12
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： TSUKIYAMA TOSHINAO , NAKAYAMA TADAKAZU , FUJITA YASUO , TSURUOKA RYOZO , IMAHASHI HIROYUKI , HASHIMOTO KOJI
IPC分类号： G21C13/00 , E04H5/02

24. 发明专利

JP2010033373A Software configuration management method and system 有权
标题翻译：软件配置管理方法与系统
公开(公告)号：JP2010033373A
公开(公告)日：2010-02-12
申请号：JP2008195353
申请日：2008-07-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HASHIMOTO KOJI , NARISAWA FUMIO , YOSHIMURA KENTARO , EBINA TOMOHITO , MIYAKE JUNJI
IPC分类号： G06F9/44
CPC分类号： G06F8/71
摘要： PROBLEM TO BE SOLVED: To surely reflect modification added to a software component on a software component database and a software product group and to generate a new software product from the database.
SOLUTION: A software configuration management system includes the software component database and a software product managing part, and accepts data transmission and reception from a software component database management client and a software product operation client. The software configuration management system has a component-product correspondence table, component-file correspondence information, a synchronizing part for reflecting a change of the software component database and a change of a software product on each other, update information, and a correspondence table updating part.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：确实反映添加到软件组件数据库和软件产品组上的软件组件的修改，并从数据库生成新的软件产品。解决方案：软件配置管理系统包括软件组件数据库和软件产品管理部分，并接受来自软件组件数据库管理客户端和软件产品操作客户端的数据传输和接收。软件配置管理系统具有组件产品对应表，组件文件对应信息，用于反映软件组件数据库的更改的同步部分和软件产品的更改，更新信息和对应表更新部分。版权所有（C）2010，JPO＆INPIT

25. 发明专利

JP2003142602A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003142602A
公开(公告)日：2003-05-16
申请号：JP2001337249
申请日：2001-11-02
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： MATSUOKA MASAMICHI , HASHIMOTO KOJI , YOSHIDA SEIJI , TOYOKAWA SHIGEYA , YAMABE KAZUHARU
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To reduce the number of photomasks used to manufacture a DRAM and to improve the manufacturing yield of the DRAM. SOLUTION: The method for manufacturing the semiconductor integrated circuit device comprises the steps of dry etching a silicon oxide film 46 (and a silicon nitride film 45 of its lower layer and a silicon oxide film 40) of a logic region, prior to the step of forming an upper electrode 56 of a capacity element C on a memory region; and forming through holes 52, 53. The method further comprises the steps of depositing the upper electrode material (W film 55, TiN films 54, 50) in a groove 47 and on the film 46, then removing the upper electrode material of the exterior of the groove 47 by a chemimechanical polishing method, thereby forming the electrode 56 in the groove 47, and thereafter simultaneously forming Al alloy wirings connected to the electrode 56 and Al alloy wirings connected to the plug 57 in the through holes 52, 53 on the silicon oxide film 46.

26. 发明专利

JP2003131622A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND DISPLAY SYSTEM, AND PROCESSING METHOD FOR DISPLAY DATA 审中-公开
公开(公告)号：JP2003131622A
公开(公告)日：2003-05-09
申请号：JP2001323200
申请日：2001-10-22
申请人： HITACHI LTD
发明人： NARUSE MASAO , NAKAZAWA TAKUICHIROU , HASHIMOTO KOJI
IPC分类号： G06F3/153 , G09G3/20 , G09G3/36
摘要： PROBLEM TO BE SOLVED: To obtain same effect as compression of data with comparatively small circuit scale, and consequently to avoid drop of throughput which is caused by the fact that the operation of a processor is disturbed by the display data read operation for display drive of a liquid crystal panel, in a system provided with a liquid crystal display device. SOLUTION: In the display system which stores the data to be displayed on the liquid crystal display device (100) into a memory which can be accessed from both a liquid crystal display control (220) and the processor (210), image data stored in the memory is divided into blocks, it is decided whether the image data continue, for example, in a unit of pixel for each block, the number of the repetition is counted, and the number of the repetition and repetition information indicating the position of the head of the repetition are stored. When the image data are read from the memory for the display, the repetition information is read and the read operation of the image data related to the repetition is eliminated.

27. 发明专利

JP2001168297A SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR MEMORY DEVICE USING IT 失效
公开(公告)号：JP2001168297A
公开(公告)日：2001-06-22
申请号：JP2000316827
申请日：2000-10-11
申请人： HITACHI LTD
发明人： YANO KAZUO , ISHII TOMOYUKI , HASHIMOTO KOJI , SEKI KOICHI , AOKI MASAKAZU , SAKATA TAKESHI , NAKAGOME YOSHINOBU , TAKEUCHI MIKI
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/10 , H01L29/66 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element in which the number of elements is small, in which a memory comprising an information storage function can be constituted by itself in a small area, and which does not require a cooling operation down to a cryogenic temperature, and to provide a semiconductor memory device. SOLUTION: Until whether one electron is captured by a trap is discriminated precisely as the current value of an FET, a capacitance across gate channels is set to be small. The magnitude of a threshold value by whether one electron is captured by the trap is sensed, and information is stored at room temperature. As a result, it is possible to realize the semiconductor memory device whose integration is high, whose power consumption is low and which is nonvolatile. It is possible to obtain a remarkable effect that the power consumption in a system is low, and that the system can be miniaturized.

28. 发明专利

JP2000012802A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000012802A
公开(公告)日：2000-01-14
申请号：JP16976998
申请日：1998-06-17
申请人： HITACHI LTD
发明人： KURODA KENICHI , HASHIMOTO KOJI , YADORI SHOJI
IPC分类号： H01L21/3205 , H01L21/8242 , H01L21/8246 , H01L23/52 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To eliminate contact resistance between conductive members of wiring part of bit lines and the conductive members in the connecting holes of bit lines. SOLUTION: In a DRAM where a plurality of memory cells composed of memory cell selective transistors Qs and data accumulating capacitor element series-connected to the transistors Qs are provided on a semiconductor substrate 1 so as to compose the active region of the memory cell selective MIS-FETQs which is constituted in a planar isolated rectangular shape and which exhibits a structure wherein a part of bit lines BL extends in the intersecting direction with a part of it extending in the direction of the bit lines BL so that the extending part planarly overaps with a semiconductor region formed in the active region to be electrically connected thereto, the bit lines BLs are composed of conductive films 16b1, 16b2 embedded in a connecting hole 14b and a wiring trench 15a for bit lines.

29. 发明专利

JPH10142379A RESIDUAL HEAT REMOVAL SYSTEM IN REACTOR FACILITY 失效
公开(公告)号：JPH10142379A
公开(公告)日：1998-05-29
申请号：JP29513596
申请日：1996-11-07
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： MIURA SATOSHI , ODA SHINGO , HASHIMOTO KOJI , SUZUKI HIROSHI , SAITO MINORU , HISAMOCHI KOUHEI
IPC分类号： G21C15/18
摘要： PROBLEM TO BE SOLVED: To add a new function capable of removing decay heat regardless of operation of auxiliary cooling system or continuous operation of a pump in addition to the conventional function of residual heat removal system using a residual heat removal system pump. SOLUTION: A circulation loop is formed with a connection line from the steam phase part of reactor pressure vessel 2 to the upper part of primary side of a heat exchanger 6 arranged at high elevation and a connection line from the lower part of the primary side of the heat exchanger 6 to the liquid phase part of the reactor pressure vessel 2, and to the secondary side of the heat exchanger 6, an air discharge line and a water supply line are provided. By this, safety of plant is drastically improved as heat discharge in the air becomes possible in addition to the conventional discharge in sea water without changing much the system configuration of the conventional residual heat removal system.

30. 发明专利

JPH07111295A SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR MEMORY DEVICE USING IT 失效
公开(公告)号：JPH07111295A
公开(公告)日：1995-04-25
申请号：JP29163893
申请日：1993-11-22
申请人： HITACHI LTD
发明人： YANO KAZUO , ISHII TOMOYUKI , HASHIMOTO KOJI , SEKI KOICHI , AOKI MASAKAZU , SAKATA TAKESHI , NAKAGOME YOSHINOBU , TAKEUCHI MIKI
IPC分类号： H01L21/8247 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/04 , G11C16/28 , H01L21/28 , H01L21/336 , H01L27/01 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/036 , H01L31/062 , H01L31/112 , H01L31/113
摘要： PURPOSE:To constitute a memory device of which an element itself has data memory functions with a small number of elements and a small area by a method wherein capacitance between a gate and a channel is made low so that presence/absence of capture of a piece of carrier by a strap can definitely be detected as the magnitude of a current value of FET. CONSTITUTION:A source region 1 is connected to a drain region 2 via a channel region 3 and the channel region 3 is connected to a gate electrode 4 via a gate insulating film 5. A level 7 for capturing at least a piece of carrier is formed near a current path 6 of the channel region 3, and an effective capacitance value Cgc between the gate electrode 4 and channel region 3 is made low to an extent that an inequality 1/Cgc>kT/q (where k is a Boltzmann constant, T is an operation temperature, and (q) is an electric charge amount of electrons) is satisfied. Thus, a memory device of which an element itself has data memory functions with a small number of elements and a small area can be constituted.

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