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21. 发明专利

JPH02245756A PATTERN FORMING MATERIAL CONTAINING ACID PRECURSOR AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JPH02245756A
公开(公告)日：1990-10-01
申请号：JP6628189
申请日：1989-03-20
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UENO TAKUMI , SHIRAISHI HIROSHI , HAYASHI NOBUAKI , AOKI EMIKO , TADANO KEIKO
IPC分类号： G03F7/038 , C07C309/65 , G03F7/004 , G03F7/039 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a pattern forming material having high resolution and sensitivity and to form a pattern by incorporating a medium which changes solubility in an aq. alkali soln. by a reaction with an acid as a catalyst and an acid precursor obtd. by esterifying a compd. having two or more phenolic hydroxyl groups and alkylsulfonic acid. CONSTITUTION:A thin coating film is formed on a substrate by coating with a pattern forming material contg. a medium which changes solubility in an aq. alkali soln. by a reaction with an acid as a catalyst and an acid precursor obtd. by esterifying a compd. having two or more phenolic hydroxyl groups and alkylsulfonic acid. When the film is patternwise irradiated with active chemical rays, the solubility of the irradiated part of the film in an aq. alkali soln. is changed by a reaction with a generated acid as a catalyst. Since this reaction is a catalytic reaction, the quantity of the chemical rays required to generate the acid is small and the reaction is carried out with high sensitivity. The pattern forming material has high sensitivity and resolution and a pattern is formed.

22. 发明专利

JPH02170165A RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THIS COMPOSITION 失效
公开(公告)号：JPH02170165A
公开(公告)日：1990-06-29
申请号：JP32361688
申请日：1988-12-23
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HASHIMOTO MICHIAKI , TADANO KEIKO , CHOKAI MINORU , IWAYAGI TAKAO , SHIRAISHI HIROSHI , HAYASHI NOBUAKI
IPC分类号： G03F7/004 , H01B5/14 , H01L21/027
摘要： PURPOSE:To enhance the sensitivity and resolution to active radiations of the compsn. and to shorten the time for baking after exposing by using a prescribed compd. which generates an acid by irradiation of radiations and a prescribed phenolic resin. CONSTITUTION:This compsn. consists of the compd. (A) which generates an acid by irradiation of the radiations and the alkali soluble phenolic resin (B) contg. a methoxymethyl group or/and methylol group. After the above-mentioned compsn. is applied on the substrate and is prebaked, patterns are transferred thereto by irradiation of the radiations. The compsn. is then developed with an alkaline developing soln. to obtain the negative type patterns. An onium salt, such as diaryl iodonium salt is usable for the component A and an alkaline soluble high-polymer compd. contg. the unit expressed by the formula is preferably used for the component B. In the formula R denotes H, methyl; n, m denotes 1, 2.

23. 发明专利

JPH0225850A RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JPH0225850A
公开(公告)日：1990-01-29
申请号：JP17503288
申请日：1988-07-15
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SHIMON HESUPU , HAYASHI NOBUAKI , UENO TAKUMI
IPC分类号： G03F7/004 , C08K3/00 , C08K5/04 , C08L25/00 , C08L101/00 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the sensitivity and the resolution of the title composition by composing the title composition of a polymer contg. acetal or thioacetal group in the side chain of the polymer and a compd. capable of being generated and acid by the irradiation of radioactive rays. CONSTITUTION:The composition is composed of the polymer contg. acetal or thioacetal group in the side chain of the polymer and the compd. capable of being generated the acid. The compounding amount of the compd. is preferably 1-50pts.wt., further preferably 1-30pts.wt. per 100pts.wt. of the polymer. When the acetal group in the side chain of the polymer is attacked the acid generated by irradiation of radioactive rays, the acetal group is effectively converted to hydroxyl or carboxyl group whereby the difference of polarity, namely, the difference of the solubility between the irradiated part and the unirradiated part of the composition is produced. So that, the positive type or the negative type pattern of the composition is obtd. by selecting a developer. Accordingly, the resolution and the sensitivity of a pattern are improved.

24. 发明专利

JPH09157479A WATER-SOLUBLE ACRYLAMIDE POLYMER AQUEOUS SOLUTION 失效
公开(公告)号：JPH09157479A
公开(公告)日：1997-06-17
申请号：JP32410095
申请日：1995-12-13
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： GOTO TATSUSHI , MIYATA YUSHI , ODAKA YOSHIYUKI , NISHIZAWA SHOKO , HAYASHI NOBUAKI , ITO MASAHITO , MORISHITA HAJIME
IPC分类号： C08K3/24 , C08K5/405 , C08L33/24 , C08L33/26
摘要： PROBLEM TO BE SOLVED: To obtain the subject thermally stabilized aqueous solution, capable of preventing the changes of viscosity and maintaining the quality for a long period, and useful as a water-soluble resist material by adding hydrochloric acid and thiourea to a water-soluble acrylamide polymer aqueous solution. SOLUTION: (B) Hydrochloric acid and (C) thiourea are added to (A) the aqueous solution of a water-soluble acrylamide polymer. The polymer of the component A is preferably a water-soluble acrylamide-diacetoneacrylamide polymer containing 1.5-4.0 moles of the acrylamide per mole of the diacetoneacrylamide. The components B and C are added in amounts of 0.1-5 pts.wt., preferably 0.2-1 pt.wt., and 0.1-5 pts.wt., preferably 0.2-2 pts.wt., respectively per 100 pts.wt. of the component A.

25. 发明专利

JPH07239547A RESIST AND RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH07239547A
公开(公告)日：1995-09-12
申请号：JP7686994
申请日：1994-04-15
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO , UENO TAKUMI , ONOZUKA TOSHIHIKO , SHIRAI SEIICHIRO , MORIUCHI NOBORU , SASAKI MAMORU , HASHIMOTO MICHIAKI , HAYASHI NOBUAKI , KOJIMA KYOKO , MURAI FUMIO , TANAKA TOSHIHIKO , YAMAMOTO JIRO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a resist developable with an aq. alkali soln., having superior sensitivity to UV, electron beams, X-rays or other radiation and also having high resolution and to provide a pattern forming method using the resist. CONSTITUTION:This resist contains a water repellent compd. having a functional group whose water repellency is lost by a nucleophilic substitution reaction with alkali or having two or more functional groups whose water repellency is lost by a reaction with alkali in one molecule and a permeability variable compsn. varying its permeability to an aq. alkali soln. by irradiation or irradiation and subsequent heat treatment. When this resist is used, a fine pattern necessary for the production of a semiconductor device, an optical disk, a magnetic head, a magnetic bubble device, etc., is efficiently formed at a low cost.

26. 发明专利

JPH05313372A PATTERN FORMING MATERIAL 失效
公开(公告)号：JPH05313372A
公开(公告)日：1993-11-26
申请号：JP12165992
申请日：1992-05-14
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SAKAMIZU TOSHIO , KUMEGAWA NAMI , UENO TAKUMI , HAYASHI NOBUAKI
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027
摘要： PURPOSE:To improve sensitivity and developing property by dissolving an alkali- soluble resin, a compd. whose carboxyl groups are substituted with acetal groups, and a compd. which produces acid by active chemical rays in a methyl acetate cellosolve. CONSTITUTION:This material consists of a compd. whose carboxyl groups containing carboxylic acid are substituted with acetal groups, a compd. which produces acid by active chemical rays, and an alkali-soluble resin. In the compd. substituted with acetal groups, the acetal groups are removed with the acid produced by irradiating the compd. with active chemical rays to produce carboxylic acid. Therefore, by mixing the compd. whose carboxyl groups are substituted with acetal groups and an alkali-soluble resin, the reaction proceeds in the irradiated part while the produced acid is used as a catalyst. Thereby, the acetal group in the compds. is removed and carboxylic acid is produced to increase the solubility with an alkali soln. On the other hand, in the non irradiated part, the alkali-solublization of the resin is obstructed with the acetal compd, thereby the part is insoluble in a developer.

27. 发明专利

JPH05205989A LITHOGRAPHY METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05205989A
公开(公告)日：1993-08-13
申请号：JP1281492
申请日：1992-01-28
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SHIRAISHI HIROSHI , SOGA TAKASHI , MURAI FUMIO , SAKAMIZU TOSHIO , HAYASHI NOBUAKI
IPC分类号： G03F7/038 , G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/3213
摘要： PURPOSE:To enable a two-dimensionally shaped etching mask pattern to be formed by a method wherein two functions, a catalyst producing function and a latent image forming function, of chemical amplification resist are separately given to two layers respectively. CONSTITUTION:An aluminum film 5 is formed on a silicon semiconductor substrate 6, and a lower resist layer 4, a catalyst producing layer 3, and a latent image forming layer 2 are successively formed. In succession, this specimen is irradiated with an electron beam as activating chemical rays through the latent image forming layer 2 to draw a prescribed wiring pattern for the formation of a catalyst producing part 7. Then, the specimen is baked to diffuse catalyst into the latent image forming layer 2 from the catalyst producing part 7 to form a latent image 8 corresponding to the pattern concerned. A developed pattern 9 can be obtained by developing the latent image forming layer 2, the catalyst producing layer 3 and the lower resist layer 4 are etched through the developed pattern 9 as a mask to obtain a resist pattern 10, and a wiring layer 5 is dry-etched using the resist pattern 10 as mask. By this setup, fine work can be carried out high in accuracy.

28. 发明专利

JPH04273244A PRODUCTION OF PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH04273244A
公开(公告)日：1992-09-29
申请号：JP3416091
申请日：1991-02-28
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： GOTO TATSUSHI , OMORI EIJI , HASHIMOTO MICHIAKI , MORISHITA HAJIME , HAYASHI NOBUAKI , NONOGAKI SABURO , ITO MASAHITO , NISHIZAWA SHOKO , MIURA SEIJI , ODAKA YOSHIYUKI
IPC分类号： G03F7/004 , G03F7/012 , G03F7/027 , H01J9/20
摘要： PURPOSE:To efficiently lower the viscosity of the photosensitive compsn. in a short period of time and to obtain a uniformly coated film free from unequal coating by using the photosensitive compsn. obtd. by this method. CONSTITUTION:This process for producing the photosensitive compsn. contg. a copolymer A having a water-soluble unphotosensitive monomer unit and a monomer unit having an azide group and electrolytic functional group and a water-soluble high-polymer compd. B which exhibits a reciprocity law failure characteristic by reacting with the copolymer A produces the above-mentioned photosensitive compsn. by allowing zirconia beads to coexist in the photosensitive compsn. or the copolymer A or the water-soluble high-polymer compd. B and mixing the mixture under stirring at a high speed.

29. 发明专利

JPH04165359A RADIOSENSITIVE COMPOUND AND FORMATION OF PATTERN USING SAME 失效
公开(公告)号：JPH04165359A
公开(公告)日：1992-06-11
申请号：JP29091790
申请日：1990-10-30
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , HAYASHI NOBUAKI , TADANO KEIKO , IWAYAGI TAKAO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/38 , H01B13/00 , H01L21/027
摘要： PURPOSE:To realize provision of radiosensitive compound excellent in heat stability, and having high sensitivity and high resolution by allowing alkaline soluble polymer compound and carbon directly coupled to aromatic ring to include secondary or tertiary alcohol having hydroxyl group and precursor acid generating acid by application of radiation. CONSTITUTION:Secondary or tertiary alcohol having hydroxyl group and precursor acid generating acid by application of radiation are included in alkaline soluble polymer compound and carbon directly coupled to aromatic ring. The secondary or tertiary alcohol having hydroxyl group in the carbon directly coupled to the contained aromatic ring effectively takes dehydrating action when it is heated under strong acid to generate lipophilic compound. Since the hydrating action is induced by the acid generated from the precursor acid in a radiation application range when heating is carried out especially after application of radiation, unsoluble or slightly soluble characteristic to alkaline developing liquid is obtained. This radiosensitive compound serves as a negative type photosensitive compound. It is thus possible to have excellent sensitivity and stability against ultraviolet ray, electron beam, another radiation.

30. 发明专利

JPH03192361A PATTERN FORMING MATERIAL 失效
公开(公告)号：JPH03192361A
公开(公告)日：1991-08-22
申请号：JP33134589
申请日：1989-12-22
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SHIRAISHI HIROSHI , UENO TAKUMI , HAYASHI NOBUAKI
IPC分类号： G03F7/039 , H01L21/027
摘要： PURPOSE:To allow the formation of patterns with high efficiency and to obtain highly-integrated semiconductor devices at a high yield by using an acid precursor consisting of the ester of a compd. having >= 2 phenolic hydroxyl groups and alkyl sulfonic acid in combination with a moisture retaining agent. CONSTITUTION:The pattern forming material contains a medium having the reactivity to change the solubility in an aq. alkaline soln. by the reaction with an acid as a catalyst, the acid precursor consisting of the ester of the compd. having >= 2 phenolic hydroxyl groups and the alkyl sulfonic acid and the moisture retaining agent. The acid precursor compd. consisting of the ester of the compd. having >= 2 phenolic hydroxyl groups and the alkyl sulfonic acid is exemplified by the ester of the phenolic hydroxyl groups, such as catechol, resorcin, hydroquinone, pyrogallol, oxyhydroquinone and galate and the alkyl sulfonic acid. Surfactants, such as pentamethylene glycol and tetraethylene glycol, and polhydric alcohol, such as glycerol, are usable as the moisture retaining agent.

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