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21. 发明授权

US11261202B2 Catalytic reduction of halogenated carbosilanes and halogenated carbodisilanes 有权
公开(公告)号：US11261202B2
公开(公告)日：2022-03-01
申请号：US16603358
申请日：2017-04-07
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , AIR LIQUIDE ADVANCED MATERIALS, INC. , Manish Khandelwal , Reno Pesaresi , Jean-Marc Girard
发明人： Manish Khandelwal , Reno Pesaresi , Jean-Marc Girard
IPC分类号： C07F7/08 , B01J31/02 , C07F7/12
摘要： Selective reduction methods for halogenated carbosilanes and carbodisilanes are disclosed. More particularly, high yields of the desired carbosilanes and carbodisilanes are obtained by reduction of their halogenated counterparts using a reducing agent and tetrabutylphosphonium chloride (TBPC) as a catalyst.

22. 发明授权

US08367531B1 Aluminum implant using new compounds 有权
标题翻译：使用新化合物的铝植入物
公开(公告)号：US08367531B1
公开(公告)日：2013-02-05
申请号：US13041154
申请日：2011-03-04
申请人： Vincent M. Omarjee , Christian Dussarrat , Jean-Marc Girard , Nicolas Blasco
发明人： Vincent M. Omarjee , Christian Dussarrat , Jean-Marc Girard , Nicolas Blasco
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01J37/3171 , H01L21/26506 , H01L21/26566 , H01L21/2658
摘要： The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译：本发明提供了可用于半导体材料中的铝植入物的分子。分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。

23. 发明授权

US08357430B2 Method for producing silicon nitride films 有权
标题翻译：氮化硅膜的制造方法
公开(公告)号：US08357430B2
公开(公告)日：2013-01-22
申请号：US11573727
申请日：2005-08-17
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura
IPC分类号： C23C16/34
CPC分类号： C23C16/345 , H01L21/3185
摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.
摘要翻译：（问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对较低的温度和较高的生长速率下进行。（溶液）氮化硅膜的制造方法，其特征在于，供给气态三甲胺和气态氮源，所述气态三甲胺和气态氮源包含至少两种选自式（1）的胺类化合物的胺类化合物：NR1R2R3（R1，R2和R3分别为各自独立地选自氢和C 1-6烃基）转化成反应室，其保持至少一个基底并通过使三甲胺和所述氮源反应在所述至少一个基底上形成氮化硅膜。

24. 发明授权

US07482286B2 Method for forming dielectric or metallic films 有权
标题翻译：电介质或金属膜的形成方法
公开(公告)号：US07482286B2
公开(公告)日：2009-01-27
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/469 , H01L21/8242 , H01L21/31 , H01L21/38 , H01L21/22 , H01L21/4763
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译：通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。可以获得MsiN，MSI和/或MSION膜。这些膜可用作高k电介质膜。

25. 发明申请

US20080236482A1 METHOD FOR LOW TEMPERATURE THERMAL CLEANING 审中-公开
公开(公告)号：US20080236482A1
公开(公告)日：2008-10-02
申请号：US11967603
申请日：2007-12-31
申请人： Jun SONOBE , Yudai Tadaki , Takamitsu Shigemoto , Jean-Marc Girard
发明人： Jun SONOBE , Yudai Tadaki , Takamitsu Shigemoto , Jean-Marc Girard
IPC分类号： B05C11/00 , B08B3/00
CPC分类号： B08B7/00 , B08B9/08 , C23C16/4405 , H01L21/67069
摘要： Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or lower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.

26. 发明申请

US20080121249A1 Method for Cleaning Film-Forming Apparatuses 审中-公开
标题翻译：清洗成膜装置的方法
公开(公告)号：US20080121249A1
公开(公告)日：2008-05-29
申请号：US10583641
申请日：2004-12-10
申请人： Julien Gatineau , Christian Dussarrat , Kazutaka Yanagita , Tomomi Fujita , Jean-Marc Girard
发明人： Julien Gatineau , Christian Dussarrat , Kazutaka Yanagita , Tomomi Fujita , Jean-Marc Girard
IPC分类号： B08B5/00
CPC分类号： B08B7/00 , C23C14/564 , C23C16/4405 , C23C16/4412
摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.
摘要翻译：为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在钌型沉积物的表面区域最少包含固体氧化钌。至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。

27. 发明授权

US07064083B2 Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof 有权
标题翻译：六烷基（单烃基氨基）二硅烷及其制备方法
公开(公告)号：US07064083B2
公开(公告)日：2006-06-20
申请号：US11222361
申请日：2005-09-08
申请人： Christian Dussarrat , Jean-Marc Girard
发明人： Christian Dussarrat , Jean-Marc Girard
IPC分类号： H01L21/31
CPC分类号： C07F7/10
摘要： A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3 (I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.
摘要翻译：提供不含氯的硅烷化合物的组合物和制备方法。化合物是具有通式（I）的六（单烃基氨基）二硅烷，其中式（I）<βin-line-formula description =“In-line Formulas”end =“lead”→（（R）HN） -Si-Si-（NH（R））3（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中每个R独立地表示 C 1至C 4烃基。这些二硅烷可以通过使六氯二硅烷在有机溶剂中与至少6倍摩尔的单烃基胺R N H 2（其中R是C 1至C 4）的反应来合成烃基）。这些化合物在低温下具有优异的成膜特性。这些膜，特别是在氮化硅和氮氧化硅的情况下，也具有优异的处理特性。

28. 发明授权

US06328801B1 Method and system for recovering and recirculating a deuterium-containing gas 失效
标题翻译：用于回收和再循环含氘气体的方法和系统
公开(公告)号：US06328801B1
公开(公告)日：2001-12-11
申请号：US09019781
申请日：1998-02-06
申请人： Daniel Gary , Jean-Marc Girard , Jean-Christophe Rostaing , Jean-Marie Friedt
发明人： Daniel Gary , Jean-Marc Girard , Jean-Christophe Rostaing , Jean-Marie Friedt
IPC分类号： B05C1100
CPC分类号： B01D53/04 , B01D2253/108 , B01D2253/112 , B01D2258/0216 , Y02C20/10 , Y10S55/30 , Y10S118/90 , Y10S261/27
摘要： Provided is a novel method of and system for recovering and recirculating a deuterium-containing gas. According to the inventive method, a deuterium-containing feed gas is introduced into a chamber. An exhaust gas containing deuterium is removed from the chamber. The deuterium concentration of the exhaust gas is adjusted to a predetermined value, thereby producing a concentration-adjusted gas stream. Finally, the concentration-adjusted gas stream is introduced into the chamber as the deuterium-containing feed gas. The invention makes the use of deuterium, for example, in the mass production of semiconductor devices, commercially feasible.
摘要翻译：提供了用于回收和再循环含氘气体的新方法和系统。根据本发明的方法，将含氘原料气体引入室中。从室中除去含有氘的废气。将废气的氘浓度调整为规定值，由此生成浓度调节气体流。最后，将浓度调节的气流作为含氘原料气体引入该室。本发明例如在半导体器件的批量生产中可以使用氘，这在商业上是可行的。

29. 发明授权

US5928415A Selection device for providing one or the other of two gases to an apparatus 失效
标题翻译：用于向装置提供两种气体中的一种或另一种的选择装置
公开(公告)号：US5928415A
公开(公告)日：1999-07-27
申请号：US752071
申请日：1996-11-19
申请人： Jean-Marc Girard , Alain Mail , Yves Marot
发明人： Jean-Marc Girard , Alain Mail , Yves Marot
IPC分类号： G01N33/00 , B01D53/22
CPC分类号： G01N33/0006
摘要： A selection device for delivering one of two gases to an apparatus includes an apparatus having an inlet and an outlet, and a gas delivery line connected to the inlet of the apparatus. A first feed line and a second feed line for respectively feeding a first and a second gas are provided. A first purge line and a second purge line are also provided, the first feed line being connected to the first purge line and the second feed line being connected to the second purge line. A common connection line connects the first and the second feed lines to the gas delivery line. An additional purge line is connected to the outlet of the apparatus. A first element, a second element, and a third element for creating a pressure drop are disposed in the first, the second, and the additional purge lines, respectively, the first element for creating a pressure drop and the third element for creating a pressure drop being flow-regulating elements, the second element for creating a pressure drop being a backpressure regulator. The common gas delivery line is only connected to the common connection line and to the apparatus.
摘要翻译：用于将两种气体中的一种输送到设备的选择装置包括具有入口和出口的装置以及连接到装置的入口的气体输送管线。提供了用于分别供给第一和第二气体的第一进料管线和第二进料管线。还提供第一吹扫管线和第二吹扫管线，第一进料管线连接到第一吹扫管线，第二进料管线连接到第二吹扫管线。公共连接线将第一和第二进料管线连接到气体输送管线。附加的净化线连接到设备的出口。第一元件，第二元件和用于产生压降的第三元件分别设置在第一，第二和附加吹扫管线中，用于产生压降的第一元件和用于产生压力的第三元件液滴是流量调节元件，用于产生压降的第二元件是背压调节器。公共气体输送管线仅连接到公共连接线路和设备。

30. 发明授权

US11008351B2 Methods for vapor deposition of group 4 transition metal-containing films using Group 4 transition metal-containing films forming compositions 有权
公开(公告)号：US11008351B2
公开(公告)日：2021-05-18
申请号：US16331204
申请日：2017-04-10
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Ziyun Wang , Zhiwen Wan , Jean-Marc Girard
发明人： Ziyun Wang , Zhiwen Wan , Jean-Marc Girard
IPC分类号： C23C16/18 , C07F7/28 , C23C16/455 , C07F17/00 , C23C16/40 , C07F7/00 , C23C16/08
摘要： Disclosed are methods of using Group 4 transition metal azatrane precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

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