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    • 28. 发明申请
    • SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION
    • 半导体光转换结构
    • US20110101402A1
    • 2011-05-05
    • US13000592
    • 2009-06-10
    • Jun-Ying ZhangTerry L. SmithMichael A. Haase
    • Jun-Ying ZhangTerry L. SmithMichael A. Haase
    • H01L33/00
    • H01L33/50H01L33/08H01L33/44H01L2933/0091
    • Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
    • 公开了半导体光转换结构。 半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层,其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。 结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。 半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。 外涂层具有大于第二折射率的第三折射率。