会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明专利
    • Pattern inspection device
    • 图案检查装置
    • JP2009145353A
    • 2009-07-02
    • JP2008323107
    • 2008-12-19
    • Hitachi Ltd株式会社日立製作所
    • MURAKOSHI HISAYAYAJIMA YUSUKESHINADA HIROYUKINOZOE MARITAKATO ATSUKOUMEMURA KAORUHASEGAWA MASAKIKURODA KATSUHIRO
    • G01N23/225H01L21/027H01L21/66
    • PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method for inspecting a semiconductor or the like quickly.
      SOLUTION: This pattern inspection device includes at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in same circuit patterns. A degree of vacuum in a vicinity of a plurality of electron sources is kept very high all the time by vacuum-evacuating an electron gun chamber with a plurality of electron sources mounted independently from a sample chamber. An electric field and a magnetic field are sealed within the respective electronic optical systems by a shielding electrode for vacuum-evacuating an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a throughput of the inspection is improved proportionally to the number of the electronic optical systems.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种快速检查半导体等的图案检查装置和图案检查方法。 解决方案:该图案检查装置包括至少三个或更多个电子光学系统,并且以相同的电路图案基本同时获得的检测信号进行比较。 通过用独立于样品室安装的多个电子源对电子枪室进行真空抽真空,多个电子源附近的真空度保持非常高。 通过用于真空排出电子束路径的屏蔽电极将电场和磁场密封在各个电子光学系统内,并且将负电压设置为样品,以将二次电子和反射电子加速到 在电子束光轴中的电子源侧,以便检测同一电子光学系统内的二次电子和反射电子。 因此在图案检查中同时确定缺陷,并且与电子光学系统的数量成比例地改进检查的生产量。 版权所有(C)2009,JPO&INPIT
    • 22. 发明专利
    • Wafer inspection device
    • 波形检测装置
    • JP2005311386A
    • 2005-11-04
    • JP2005134893
    • 2005-05-06
    • Hitachi Ltd株式会社日立製作所
    • YAJIMA YUSUKEUMEMURA KAORUTAJI SHINICHIMURAKOSHI HISAYASHINADA HIROYUKINOZOE MARITAKATO ATSUKOHASEGAWA MASAKIMAKINO HIROSHI
    • B23K15/00H01J37/20H01J37/30H01L21/66
    • PROBLEM TO BE SOLVED: To provide an inspection device, capable of performing the visual inspection of a semiconductor at a high speed with high resolution and uniformly preparing a sample for TEM observation and various analyses, with high position accuracy, from a region where foreign matters or defects exist.
      SOLUTION: A scanning electron microscope section (SEM section) 1 for wafer inspection and an ion beam section 101 for preparing and processing a sample are provided side by side in the same inspection device, it is designed to consistenly perform visual inspection of the wafer 7 with the SEM section 1 and an extraction and processing of the specimen for the TEM observation and various analyses from the region, where defects (foreign matters or defective patterns) are present on the wafer 7 on the stage 8, based on the results of the inspection.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种检查装置,能够以高分辨率高速度地进行半导体的目视检查,并且从位置精确度均匀地制备用于TEM观察的样本和各种分析 存在异物或缺陷。 解决方案:用于晶片检查的扫描电子显微镜部分(SEM部分)1和用于制备和处理样品的离子束部分101并排地设置在同一检查装置中,其被设计为一致地执行目视检查 具有SEM部分1的晶片7以及用于TEM观察的样本的提取和处理以及在阶段8上的晶片7上存在缺陷(异物或缺陷图案)的区域的各种分析,基于 检查结果。 版权所有(C)2006,JPO&NCIPI
    • 24. 发明专利
    • Method and apparatus for inspecting circuit pattern
    • 检查电路图的方法和装置
    • JP2007180035A
    • 2007-07-12
    • JP2007000916
    • 2007-01-09
    • Hitachi Ltd株式会社日立製作所
    • NOZOE MARISHINADA HIROYUKISUGIYAMA KATSUYATAKATO ATSUKOHIROI TAKASHIYOSHIMURA KAZUSHISUGIMOTO ARITOSHIYODA HARUOKURODA KATSUHIROUSAMI YASUTSUGUTANAKA MAKIKANEKO YUTAKATOYAMA HIROSHIINO TADAOYAJIMA YUSUKEANDO MASAAKIMAEDA SHUNJIKUBOTA HITOSHI
    • H01J37/28G01N23/225H01J37/20H01L21/66
    • PROBLEM TO BE SOLVED: To rapidly, stably, and accurately inspect a circuit pattern with an insulating material in an inspection method for comparing the secondary electron images of the defects, foreign matter, and residues of the circuit pattern produced on a substrate of a semiconductor device. SOLUTION: In this circuit pattern inspection method, an electron beam image is formed on a substrate 9 to be inspected before the potential of the member of the circuit pattern is varied by radiating a heavy-current electron beam 19 onto the substrate 9 at a high speed. Before the inspection, the substrate 9 is radiated with a second charged particle beam 104 in addition to the first electron beam for forming an image for inspection to stabilize the potential of the member. Also, secondary electron detection signals are digitized before transfer to acquire high quality electron beam images with high efficiency and high SN ratio. By this inspection method, the circuit pattern with the insulating material can be inspected. Since those defects and abnormalities that cannot be detected by the prior art produced in various substrate manufacturing processes such as the semiconductor device can be found, the fraction defective in the substrate manufacturing processes can be reduced and the reliability can be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:在用于比较在基板上产生的缺陷,异物和电路图案的残留物的二次电子图像的检查方法中,使用绝缘材料快速,稳定且准确地检查电路图案 的半导体器件。 解决方案:在该电路图案检查方法中,在通过将大电流电子束19辐射到基板9上来改变电路图案的部件的电位之前,在要检查的基板9上形成电子束图像 以高速度。 在检查之前,除了用于形成用于检查的图像的第一电子束之外,用第二带电粒子束104照射基板9以稳定该部件的电位。 此外,二次电子检测信号在传送之前被数字化,以获得高效率和高SN比的高质量电子束图像。 通过该检查方法,可以检查具有绝缘材料的电路图案。 由于可以发现在诸如半导体器件的各种衬底制造工艺中产生的现有技术无法检测到的这些缺陷和异常,可以降低衬底制造工艺中的缺陷部分,并且可以提高可靠性。 版权所有(C)2007,JPO&INPIT
    • 25. 发明专利
    • Pattern inspection device
    • 图案检查装置
    • JP2006184286A
    • 2006-07-13
    • JP2006001022
    • 2006-01-06
    • Hitachi Ltd株式会社日立製作所
    • MURAKOSHI HISAYAYAJIMA YUSUKESHINADA HIROYUKINOZOE MARITAKATO ATSUKOUMEMURA KAORUHASEGAWA MASAKIKURODA KATSUHIRO
    • G01N23/225H01L21/66
    • PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
      SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and a degree of vacuum in the vicinity of a plurality of electron sources is kept high all the time by vacuum-evacuating an electron gun chamber mounted with the plurality of electron sources independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating highly an electron beam passage, a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, and the secondary electron and the reflected electron are thereby detected within the same electronic optical system. A defect is determined thereby in the pattern inspection, by comparing detection signals obtained substantially concurrently in the same circuit patterns.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供能够快速检查半导体等的图案检查装置和图案检查方法。 解决方案:本发明的图案检查装置配置有至少三个以上的电子光学系统,并且通过真空抽真空将多个电子源附近的真空度始终保持较高 独立于样品室安装有多个电子源的电子枪室。 电场和磁场通过能够对电子束通道进行高真空抽真空的屏蔽电极密封在每个电子光学系统内,负电压被设定为样品以将二次电子和反射电子加速到方向 在电子束光轴中的电子源侧,从而在同一电子光学系统内检测二次电子和反射电子。 通过比较基本上以相同电路图案同时获得的检测信号,从而在图案检查中确定了缺陷。 版权所有(C)2006,JPO&NCIPI
    • 26. 发明专利
    • Pattern inspection device
    • 图案检查装置
    • JP2005121635A
    • 2005-05-12
    • JP2004255059
    • 2004-09-02
    • Hitachi Ltd株式会社日立製作所
    • MURAKOSHI HISAYAYAJIMA YUSUKESHINADA HIROYUKINOZOE MARITAKATO ATSUKOUMEMURA KAORUHASEGAWA MASAKIKURODA KATSUHIRO
    • G01B15/04G01B15/08G01N23/225H01L21/66
    • PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
      SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in the same circuit fellow patterns. A degree of vacuum in the vicinity of a plurality of electron sources is kept very high all the time by vacuum-evacuating electron gun chambers mounted with the plurality of electron sources independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating highly an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a through-put of the inspection is enhanced thereby. The three or more of electron beam sources are stably operated therein under the high-vacuum condition, and accurate inspection is carried out therein.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供能够快速检查半导体等的图案检查装置和图案检查方法。 解决方案:本发明的图案检测装置配置有至少三个以上的电子光学系统,并且比较以相同的电路图案基本同时获得的检测信号。 在多个电子源附近的真空度始终通过与样品室独立地安装有多个电子源的电子枪室而真空抽真空。 电场和磁场通过能够高度真空排出电子束路径的屏蔽电极密封在每个电子光学系统内,并且将负电压设置为样品以将二次电子和反射电子加速到 在电子束光轴中的电子源侧的方向,以便检测同一电子光学系统内的二次电子和反射电子。 因此,在图案检查中同时确定缺陷,从而增强检查的通过。 三个以上的电子束源在高真空条件下稳定地工作,并且在其中进行精确的检查。 版权所有(C)2005,JPO&NCIPI
    • 27. 发明专利
    • Passive optical network system and operation method therefor
    • 被动光网络系统及其操作方法
    • JP2010258842A
    • 2010-11-11
    • JP2009107282
    • 2009-04-27
    • Hitachi Ltd株式会社日立製作所
    • MIZUTANI MASAHIKOYAJIMA YUSUKETSUCHIYA AKIHIKO
    • H04B17/40H04L12/44
    • H04Q11/0067H04B10/272H04J3/0682H04J3/1694H04J14/0247H04J14/0252H04Q2011/0079H04Q2011/009
    • PROBLEM TO BE SOLVED: To provide a PON with a communication quality having almost the same level as a conventional PON, preventing decrease in the transmission signal band and increase in the waiting time in each ONU, even when the extension of a communication range between an OLT and an ONU and the increase of accommodated ONU is made by introducing an RE in the PON. SOLUTION: In the configuration of an optical communication system interconnecting a parent station and a plurality of child stations via an optical fiber network equipped with an optical splitter, a relay device which relays the parent station and the child station is provided with: a measuring unit for measuring a transmission distance or transmission time to a child station; a determining unit for determining a timing, when a child station transmits a signal in accordance with a transmission bandwidth request from the child station; and a signal processing unit for processing a signal received from a child station and transmitting the processed signal to the parent station. When a burst signal is received from each child station at the determined timing, a portion of the header of the burst signal is deleted, and a dummy signal is inserted into the deleted area and a gap area between the received burst signals to convert the burst signals into a series of signals for transmission to the parent station. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:为了提供具有与常规PON几乎相同水平的通信质量的PON,即使当通信的扩展时,也防止传输信号频带的减少和每个ONU中的等待时间的增加 通过在PON中引入RE来实现OLT与ONU之间的范围以及所容纳的ONU的增加。 解决方案:在通过配备有分光器的光纤网络将母站和多个子站互连的光通信系统的配置中,中继站和子站的中继设备具有: 用于测量到儿童站的传输距离或传输时间的测量单元; 确定单元,用于当子站根据来自子站的传输带宽请求发送信号时确定定时; 以及信号处理单元,用于处理从子站接收的信号,并将处理的信号发送到母站。 当在所确定的定时从每个子站接收到突发信号时,突发信号的头部的一部分被删除,并且将伪信号插入到被删除的区域中,并且接收到的突发信号之间的间隙区域以将突发 信号发送到一系列信号以传输到母站。 版权所有(C)2011,JPO&INPIT
    • 28. 发明专利
    • Optical communication system, and method of operating the same
    • 光通信系统及其操作方法
    • JP2010161672A
    • 2010-07-22
    • JP2009003036
    • 2009-01-09
    • Hitachi Ltd株式会社日立製作所
    • MIZUTANI MASAHIKOYAJIMA YUSUKE
    • H04L12/44
    • H04J3/0682H04J3/0652H04Q11/0067H04Q2011/0081H04Q2011/009
    • PROBLEM TO BE SOLVED: To provide a PON (Passive Optical Network), which suppress increase of a latency time for signal transmission and occurrence of quality deterioration of a transmitted signal in each ONU (Optical Network Unit) even if extension of a communication distance between an OLT (Optical Line Terminal) and an ONU and increase of the number of accommodated ONUs are performed, and to provide a method of controlling PON.
      SOLUTION: As for an optical communication system in which connection is made between a master station and a plurality of slave stations with an optical fiber network provided with an optical splitter, the optical fiber network includes a relay unit for relaying signals transmitted and received between the master station and the plurality of slave stations, the master station includes a first control unit for executing ranging between its own station and the relay unit, and the relay unit includes a second control unit for performing ranging between its own relay unit and the plurality of slave stations. The master station determines, on the basis of results of first ranging performed by the first control unit and results of second ranging performed by the second control unit for the relay unit, timing in which each of the slave stations transmits a signal to the master station depending on requests of the plurality of slave stations, and signals from the plurality of slave stations are multiplexed in the optical fiber network and received by the master station.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了提供PON(无线光网络),其抑制了信号传输的等待时间的增加和每个ONU(光网络单元)中的发送信号的质量劣化的发生,即使扩展了 执行OLT(光线路终端)与ONU之间的通信距离以及所容纳的ONU的数量的增加,并提供一种控制PON的方法。 解决方案:对于在具有光分路器的光纤网络的主站和多个从站之间进行连接的光通信系统,光纤网络包括用于中继发送的信号的中继单元 在主站和多个从站之间接收的主站包括:第一控制单元,用于执行其本台与中继单元之间的测距,并且中继单元包括第二控制单元,用于执行其本身的中继单元与 多个从站。 主站基于由第一控制单元执行的第一测距的结果和由中继单元的第二控制单元执行的第二测距的结果,确定每个从站向主站发送信号的定时 取决于多个从站的请求,并且来自多个从站的信号被多路复用在光纤网络中并由主站接收。 版权所有(C)2010,JPO&INPIT
    • 29. 发明专利
    • Passive optical network system, and fault specifying method thereof
    • 被动光网络系统及其故障指定方法
    • JP2010068362A
    • 2010-03-25
    • JP2008234188
    • 2008-09-12
    • Hitachi Ltd株式会社日立製作所
    • MIZUTANI MASAHIKOYAJIMA YUSUKEASHI MASAHIRO
    • H04B10/07H04B10/075H04B10/079H04B10/27H04B10/272
    • H04B10/03H04B10/07955H04B10/272H04L25/0298H04Q11/0067H04Q2011/0081H04Q2011/0083
    • PROBLEM TO BE SOLVED: To provide a passive optical network (PON) system or an optical line terminator (OLT) or those operation method (fault specifying method), capable of taking countermeasures (repair measures) by quickly specifying communication fault generated in a special optical network unit (ONU) or a branch optical fiber, from the OLT installed in the PON system. SOLUTION: In the passive optical network system in which a master station and a plurality of slave stations are connected through an optical fiber network configured of an optical splitter and a plurality of optical fibers, a master station includes: a reception circuit that receives an optical signal from each of slave stations by using a threshold used to identify whether the optical signal is 0 or 1; a band setting unit that determines a timing at which each slave station sends an optical signal; a storage part that stores thresholds and the intensities of optical signals received from the slave stations; and a control unit that sets a threshold stored corresponding to the sending timing in the reception circuit to control the reception of an optical signal. The control unit has a function that compares the intensity of a signal received from each slave station at an optical signal reception timing with information stored in the storage unit to detect and determine a fault in the slave station or in the optical fiber connected to the slave station. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种无源光网络(PON)系统或光线路终端器(OLT)或那些通过快速指定所产生的通信故障来采取对策(修复措施)的操作方法(故障指定方法) 在专门的光网络单元(ONU)或分支光纤中,从安装在PON系统中的OLT。 解决方案:在主站和多个从站通过由光分路器和多个光纤构成的光纤网络连接的无源光网络系统中,主站包括:接收电路, 通过使用用于识别光信号是0或1的阈值从每个从站接收光信号; 一个频带设置单元,确定每个从站发送光信号的定时; 存储部分,其存储从所述从站接收的阈值和光信号的强度; 以及控制单元,其设置与接收电路中的发送定时对应地存储的阈值,以控制光信号的接收。 控制单元具有将在光信号接收定时从每个从站接收的信号的强度与存储在存储单元中的信息进行比较的功能,以检测和确定从站中或连接到从站的光纤中的故障 站。 版权所有(C)2010,JPO&INPIT
    • 30. 发明专利
    • Wafer test device
    • WAFER测试设备
    • JP2008198617A
    • 2008-08-28
    • JP2008073564
    • 2008-03-21
    • Hitachi Ltd株式会社日立製作所
    • YAJIMA YUSUKEUMEMURA KAORUTAJI SHINICHIMURAKOSHI HISAYASHINADA HIROYUKINOZOE MARITAKATO ATSUKOHASEGAWA MASAKIMAKINO HIROSHI
    • H01J37/28H01J37/20H01J37/317H01L21/66
    • PROBLEM TO BE SOLVED: To provide a test device capable of testing the appearance of a semiconductor wafer at high speed with high resolution and capable of consistently preparing samples for TEM observation and various kinds of analyses from a region where foreign matters or flaws exist with high positional accuracy.
      SOLUTION: In the same test device, a scanning electron microscope part (SEM part) 1 for wafer test together with an ion beam part 101 for preparing and processing the samples is installed. The appearance test of the wafer 7 with the SEM part 1, and extraction processing work of the samples for the TEM observation and the various kinds of the analyses from the region where the flaws (foreign matters or pattern flaw) exist on the wafer 7 based on results of the appearance test are made to be consistently carried out on the same stage 8.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种能够以高分辨率高速测试半导体晶片的外观的测试装置,并能够一致地制备用于TEM观察的样品和来自异物或缺陷的区域的各种分析 存在高位置精度。 解决方案:在相同的测试装置中,安装用于晶片测试的扫描电子显微镜部分(SEM部分)1和用于制备和处理样品的离子束部分101。 基于SEM部件1的晶片7的外观试验和TEM观察用样品的提取处理工作以及在晶片7上存在缺陷(异物或图案缺陷)的区域的各种分析 对外观测试结果进行一致地在同一阶段进行。8.版权所有(C)2008,JPO&INPIT