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21. 发明专利

JP2012032788A Pattern forming method and developer used for pattern forming method 有权
标题翻译：用于图案形成方法的图案形成方法和开发者
公开(公告)号：JP2012032788A
公开(公告)日：2012-02-16
申请号：JP2011135554
申请日：2011-06-17
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ENOMOTO YUICHIRO , TARUYA SHINJI , KAMIMURA SATOSHI , IWATO KAORU , KATO KEITA , FUJII KANA
IPC分类号： G03F7/32 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/325 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/20 , G03F7/2041 , G03F7/422
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a pattern with reduced defects due to adhesion of foreign matters, and a developer used for the pattern forming method.SOLUTION: A pattern forming method comprises the steps of: (A) forming a film with a chemically amplified resist composition; (B) exposing the film; and (C) developing the exposed film with a developer containing an organic solvent. A content of an alcohol compound(X) in the developer is 0 ppm or more and less than 500 ppm based on the total mass of the developer.
摘要翻译：要解决的问题：提供一种能够形成由于异物附着而减少缺陷的图案的图案形成方法和用于图案形成方法的显影剂。解决方案：图案形成方法包括以下步骤：（A）用化学放大抗蚀剂组合物形成膜; （B）曝光胶片; 和（C）用含有机溶剂的显影剂显影曝光的薄膜。显影剂中醇化合物（X）的含量相对于显影剂的总质量为0ppm以上且小于500ppm。版权所有（C）2012，JPO＆INPIT

22. 发明专利

JP2012032446A Pattern forming method and organic processing liquid used in the method 有权
标题翻译：方法中使用的图案形成方法和有机加工液体
公开(公告)号：JP2012032446A
公开(公告)日：2012-02-16
申请号：JP2010169595
申请日：2010-07-28
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： KAMIMURA SATOSHI , IWATO KAORU , ENOMOTO YUICHIRO , KATAOKA SHOHEI , KATO KEITA , SAITO SHOICHI
IPC分类号： G03F7/32 , G03F7/038 , G03F7/039 , G03F7/38 , G03F7/40 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/0397 , G03F7/11 , G03F7/325 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method which enables to form a pattern with few development defects, and an organic processing liquid used in the method.SOLUTION: The pattern forming method includes: (a) forming a film using a chemically amplified resist composition; (b) exposing the film; and (c) processing the exposed film using an organic processing liquid. The processing liquid contains an organic solvent having a standard boiling point of ≥175°C and a content rate of the solvent in the processing liquid is
摘要翻译：要解决的问题：提供能够形成具有很少显影缺陷的图案的图案形成方法和在该方法中使用的有机处理液。图案形成方法包括：（a）使用化学放大抗蚀剂组合物形成膜; （b）曝光胶片; 和（c）使用有机处理液处理曝光的膜。处理液含有标准沸点≥175℃的有机溶剂，处理液中的溶剂含量<30质量％。版权所有（C）2012，JPO＆INPIT

23. 发明专利

JP2011227405A Pattern forming method, chemical amplification type resist composition and resist film 有权
标题翻译：图案形成方法，化学放大型电阻组合物和电阻膜
公开(公告)号：JP2011227405A
公开(公告)日：2011-11-10
申请号：JP2010099298
申请日：2010-04-22
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： KATO KEITA , TARUYA SHINJI , KAMIMURA SATOSHI , ENOMOTO YUICHIRO , IWATO KAORU
IPC分类号： G03F7/038 , G03F7/004 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/2041 , G03F7/325
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method allowing exposure latitude (EL) and depth of focus (DOF) to be excellent and allowing reduction of line width roughness (LWR) and residue defect; a chemical amplification resist composition; and a resist film.SOLUTION: Provided is a pattern forming method comprising (I) a process for forming a film with a chemical amplification type resist composition containing (A) a resin, (B) a non-ionic compound generating acid by irradiation of active rays or radiation, (C) a crosslinking agent and (D) a solvent, (II) a process for exposing the film, and (III) a process for developing using a developer containing an organic solvent; a chemical amplification type resist composition used in the pattern forming method; and a resist film formed by the chemical amplification resist composition.
摘要翻译：要解决的问题：提供允许曝光宽容度（EL）和焦点深度（DOF）优异并且可以减少线宽粗糙度（LWR）和残留缺陷的图案形成方法; 化学放大抗蚀剂组合物; 和抗蚀膜。解决方案：提供了一种图案形成方法，其包括（I）用含有（A）树脂的化学放大型抗蚀剂组合物形成膜的方法，（B）通过活性射线照射产生酸的非离子化合物或辐射，（C）交联剂和（D）溶剂，（II）暴露膜的方法，和（III）使用含有机溶剂的显影剂显影的方法; 用于图案形成方法的化学放大型抗蚀剂组合物; 以及由化学增幅抗蚀剂组合物形成的抗蚀剂膜。版权所有（C）2012，JPO＆INPIT

24. 发明专利

JP2011197339A Resist composition and pattern forming method using the same 有权
标题翻译：使用它的耐蚀组合物和图案形成方法
公开(公告)号：JP2011197339A
公开(公告)日：2011-10-06
申请号：JP2010063408
申请日：2010-03-19
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MIZUTANI KAZUYOSHI , IWATO KAORU , TARUYA SHINJI , KAMIMURA SATOSHI , ENOMOTO YUICHIRO , FUJII KANA , KATAOKA SHOHEI , DOBASHI TORU , KATO KEITA
IPC分类号： G03F7/038 , G03F7/039 , G03F7/32
摘要： PROBLEM TO BE SOLVED: To provide: a resist composition having excellent development failure performance; and a pattern forming method using the composition.SOLUTION: The resin composition contains: a resin which contains a repeating unit including a group that dissolves by action of acid to generate an alcoholic hydroxy group and decreases the solubility to a developing solution containing an organic solvent by the action of acid; and a compound that generates acid expressed by the following general formula (I) by application of activated light rays or radiation rays, wherein Xf represents each independently, a fluorine atom or an alkyl group substituted with at least one fluorine atom, Rand Rrepresent each independently, a group selected from the group consisting of a hydrogen atom, a fluorine atom, an alkyl group, and an alkyl group substituted with at least one fluorine atom, L represents each independently a single bond or divalent linking group, A represents each independently a group having a cyclic structure, x represents each independently an integer of 1 to 20, y represents each independently an integer of 0 to 10, and z represents each independently an integer of 0 to 10.
摘要翻译：要解决的问题：提供：具有优异的显影破坏性能的抗蚀剂组合物; 和使用该组合物的图案形成方法。树脂组合物含有：含有重复单元的树脂，该重复单元包括通过酸作用而溶解以产生醇羟基并降低对含有有机溶剂的显影溶液的溶解度的基团通过酸的作用; 以及通过施加活化的光线或射线产生由以下通式（I）表示的酸的化合物，其中Xf各自独立地为氟原子或被至少一个氟原子取代的烷基，R R R R各自独立地选自氢原子，氟原子，烷基和被至少一个氟原子取代的烷基的基团，L各自独立地为单键或二价连接基团，A表示各自独立地为具有环状结构的基团，x表示各自独立地为1〜20的整数，y表示各自独立地为0〜10的整数，z表示各自独立地为0〜10的整数。

25. 发明专利

JP2011186247A Pattern forming method, chemically amplified resist composition, and resist film 有权
标题翻译：图案形成方法，化学放大电阻组合物和电阻膜
公开(公告)号：JP2011186247A
公开(公告)日：2011-09-22
申请号：JP2010052385
申请日：2010-03-09
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： KATO KEITA , TARUYA SHINJI , KAMIMURA SATOSHI , ENOMOTO YUICHIRO , IWATO KAORU
IPC分类号： G03F7/004 , C08F220/10 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method that excels in exposure latitude and sensitivity, which can form a pattern that also excels in line-width variation, and to provide a chemically-amplified resist composition using the method. SOLUTION: The method for forming a pattern includes exposing a film of the chemically-amplified resist composition containing (A) a resin, (B) a compound which generates acid by irradiation with activated light ray or radial ray and which is expressed by a general formula (I) or (II), (C) a cross-linking agent and (D) a solvent, and performing development using a developer containing an organic solvent. In the general formula (I), R 1 to R 5 repectively represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or the like, independently. R 6 and R 7 repectively represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or the like, independently. R x and R y respectively represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, or the like, independently. Z - represents non-nucleopetal anion. In the general formula (II), R 13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, or the like. R 14 represents independently when existing in multiple, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, or the like. R 15 represents an alkyl group, a cycloalkyl group or a naphthyl group, independently. l represents an integer 0 to 2. r represents an integer 0 to 8. Z - represents a non-nucleopetal anion. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在曝光宽容度和灵敏度方面优异的图案形成方法，其可以形成也优于线宽变化的图案，并提供使用该方法的化学放大抗蚀剂组合物。解决方案：用于形成图案的方法包括将含有（A）树脂的化学放大抗蚀剂组合物的膜曝光，（B）通过用激活的光线或径向辐射照射产生酸的化合物，并且其表达通过通式（I）或（II），（C）交联剂和（D）溶剂，并使用含有有机溶剂的显影剂进行显影。在通式（I）中，R SB 1至R SB 5分别独立地表示氢原子，烷基，环烷基，芳基等。 R SB 6和R SB 7分别独立地表示氢原子，烷基，环烷基，卤素原子等。 R SB和R SB分别表示烷基，环烷基，2-氧代烷基，2-氧代环烷基等。 Z - 表示非核子阴离子。在通式（II）中，R SB 13表示氢原子，氟原子，羟基，烷基，环烷基，烷氧基等。当存在多个，羟基，烷基，环烷基，烷氧基等时，R“SB”独立地表示。 R SB 15独立地表示烷基，环烷基或萘基。 l表示0〜2的整数。r表示0〜8的整数。Z表示非核子阴离子。版权所有（C）2011，JPO＆INPIT

26. 发明专利

JP2011141494A Pattern forming method, chemically amplified resist composition and resist film 有权
标题翻译：图案形成方法，化学放大电阻组合物和电阻膜
公开(公告)号：JP2011141494A
公开(公告)日：2011-07-21
申请号：JP2010003386
申请日：2010-01-08
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ENOMOTO YUICHIRO , TARUYA SHINJI , KAMIMURA SATOSHI , IWATO KAORU , KATO KEITA , SHIBUYA AKINORI
IPC分类号： G03F7/004 , C08F20/34 , G03F7/038 , G03F7/039 , G03F7/32 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method and a chemically amplified negative resist composition exhibiting a large depth of focus (DOF) and small line-width roughness (LWR) and being capable of forming a pattern having a superior pattern shape and reduced bridge defects. SOLUTION: The pattern forming method includes (α) a step of forming a film from a chemically amplified resist composition; (β) a step of exposing the film; and (γ) a step of developing with a developer containing an organic solvent, wherein the resist composition comprises (A) a resin which exhibits a decreased solubility in a developer containing an organic solvent by the action of an acid, (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (D) a solvent, and (G) a compound which has basicity or exhibits increased basicity due to the action of an acid, the compound having at least one of a fluorine atom or an oxygen atom. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供显示出大的焦深（DOF）和小的线宽粗糙度（LWR）的图案形成方法和化学放大的负性抗蚀剂组合物，并且能够形成具有优异图案的图案形状和桥梁缺陷减少。解决方案：图案形成方法包括（α）从化学放大抗蚀剂组合物形成膜的步骤; （β）暴露薄膜的步骤; 和（γ）用包含有机溶剂的显影剂显影的步骤，其中抗蚀剂组合物包含（A）通过酸作用显示含有有机溶剂的显影剂的溶解性降低的树脂，（B）化合物其在用光化射线或辐射照射时产生酸，（D）溶剂，和（G）由于酸的作用而具有碱性或显示增加的碱性的化合物，所述化合物具有氟原子或氟原子中的至少一个或氧原子。版权所有（C）2011，JPO＆INPIT

27. 发明专利

JP2011137888A Pattern forming method, pattern, chemically amplified resist composition, and resist film 有权
标题翻译：图案形成方法，图案，化学放大抗蚀剂组合物和耐蚀膜
公开(公告)号：JP2011137888A
公开(公告)日：2011-07-14
申请号：JP2009296418
申请日：2009-12-25
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： KAMIMURA SATOSHI , TARUYA SHINJI , ENOMOTO YUICHIRO , KATO KEITA , IWATO KAORU
IPC分类号： G03F7/039 , C08F220/12 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern excellent in exposure latitude (EL) and line width variance (LWR) or CD (critical dimension) uniformity (CDU) is formed; to provide a pattern formed by the same; to provide a chemically amplified resist composition used in the pattern forming process; and to provide a resist film formed from the resist composition.
SOLUTION: The pattern forming method includes (α) a process for forming a film by using a chemically amplified resist composition containing (A) a resin having a non-aromatic cyclic organic group, (B) a compound generating an acid by the irradiation with an actinic ray or radiation, and (C) a crosslinking agent, (β) a process for exposing the formed film, and (γ) a process for developing the exposed film by using a developing solution containing an organic solvent. A pattern formed by the pattern forming method, a chemically amplified resist composition used in the pattern forming method, and a resist film formed from the resist composition are also provided.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供形成曝光宽容度（EL）和线宽方差（LWR）或CD（临界尺寸）均匀性（CDU）优异的图案的图案形成方法; 以提供由其形成的图案; 以提供在图案形成过程中使用的化学放大抗蚀剂组合物; 并提供由抗蚀剂组合物形成的抗蚀剂膜。解决方案：图案形成方法包括：（α）通过使用含有（A）具有非芳族环状有机基团的树脂的化学放大抗蚀剂组合物（B）通过以下方法生成酸的化合物用光化射线或辐射照射，（C）交联剂，（β）曝光成膜的方法，（γ）使用含有有机溶剂的显影液显影曝光膜的方法。还提供了通过图案形成方法形成的图案，在图案形成方法中使用的化学放大型抗蚀剂组合物和由抗蚀剂组合物形成的抗蚀剂膜。版权所有（C）2011，JPO＆INPIT

28. 发明专利

JP2010286831A Negative pattern formation method, composition used in the same and resist film 有权
标题翻译：负面图案形成方法，使用于其中的组合物和耐腐蚀膜
公开(公告)号：JP2010286831A
公开(公告)日：2010-12-24
申请号：JP2010112624
申请日：2010-05-14
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ENOMOTO YUICHIRO , KAMIMURA SATOSHI , TARUYA SHINJI
IPC分类号： G03F7/038 , C08F220/10 , G03F7/004 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern with a large depth of focus (DOF), small line width roughness (LWR) and reduced bridge defects so as to more stably form a high-precision fine pattern for manufacturing a highly-integrated, high-precision electronic device, and to provide a negative chemically amplified resist composition used in the method and a resist film. SOLUTION: The pattern forming method includes (α) a step of forming a film with a chemically amplified resist composition which is made negative by a crosslinking reaction; (β) a step of exposing the film; and (γ) a step of developing the exposed film with a developer containing an organic solvent, wherein the resist composition includes (A) a resin which does not contain repeating units derived from a hydroxystyrene; (B) a compound which generates an acid upon irradiation with actinic rays or radiation; (C) a crosslinking agent; and (D) a solvent. The negative chemically amplified resist composition used in the method and the resist film are also provided. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成具有大焦度（DOF），小线宽粗糙度（LWR）和减小的桥缺陷的图案的图案形成方法，以更稳定地形成高精度精细用于制造高度集成的高精度电子器件的图案，并提供用于该方法的抗化学放大抗蚀剂组合物和抗蚀剂膜。解决方案：图案形成方法包括：（α）通过用交联反应制成阴性的化学放大抗蚀剂组合物形成膜的步骤; （β）暴露薄膜的步骤; 和（γ）用含有有机溶剂的显影剂显影曝光膜的步骤，其中抗蚀剂组合物包括（A）不含有源于羟基苯乙烯的重复单元的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）交联剂; 和（D）溶剂。还提供了用于该方法的负化学放大抗蚀剂组合物和抗蚀剂膜。版权所有（C）2011，JPO＆INPIT

29. 发明专利

JP2009080482A Positive resist composition and pattern-forming method using the same 有权
标题翻译：正极性组合物和使用其的图案形成方法
公开(公告)号：JP2009080482A
公开(公告)日：2009-04-16
申请号：JP2008227547
申请日：2008-09-04
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： SAEGUSA HIROSHI , WADA KENJI , ENOMOTO YUICHIRO
IPC分类号： G03F7/004 , C08F12/06 , C08F16/12 , C08F20/10 , G03F7/039 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition, which not only in normal exposure (dry exposure) but also in immersion exposure, causes few development defects, has film shrinkage resistance, excels also in line edge roughness, suppresses generation of scum, and has proper conformability to an immersion liquid in immersion exposure, and to provide a pattern forming method that uses the same. SOLUTION: The resist composition comprises (A) resin, of which the solubility in an alkali developer increases by the action of an acid, (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (C) a resin containing neither fluorine atoms nor silicon atoms, and having a degree of molecular weight dispersion of 1.3 or smaller and a weight average molecular weight of ≤1.0×10 4 , and (D) a solvent. The pattern-forming method that uses the composition is also provided. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供不仅在正常曝光（干式曝光）中而且在浸渍曝光中的抗蚀剂组合物，导致很少的显影缺陷，具有膜收缩性，也优于线边缘粗糙度，抑制了生成浮渣，并且对浸渍曝光中的浸渍液具有适当的适应性，并且提供使用其的图案形成方法。抗蚀剂组合物包含（A）树脂，其中在碱显影剂中的溶解度通过酸的作用而增加，（B）在用光化射线或辐射照射时产生酸的化合物，（C）不含氟原子和硅原子的树脂，分子量分散度为1.3以下，重均分子量为≤1.0×10 4 ，（D）溶剂。还提供了使用该组合物的图案形成方法。版权所有（C）2009，JPO＆INPIT

30. 发明专利

JP2014157358A Active light-sensitive or radiation-sensitive resin composition, and pattern formation method using the same 有权
标题翻译：活性敏感性或辐射敏感性树脂组合物和使用其的图案形成方法
公开(公告)号：JP2014157358A
公开(公告)日：2014-08-28
申请号：JP2014053073
申请日：2014-03-17
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： IWATO KAORU , KATAOKA SHOHEI , TARUYA SHINJI , KAMIMURA SATOSHI , ENOMOTO YUICHIRO , FUJII KANA , KATO KEITA , DOBASHI TORU , MIZUTANI KAZUYOSHI
IPC分类号： G03F7/039 , G03F7/004 , G03F7/038
摘要： PROBLEM TO BE SOLVED: To provide an active light-sensitive or a radiation-sensitive resin composition excellent in development defect performance, immersion defect performance and marginal resolving power, and capable of forming a pattern having a good shape, and to provide a pattern formation method using the same.SOLUTION: There is provided an active light-sensitive or a radiation-sensitive resin composition containing: a resin which has a reduced solubility to a developer containing an organic solvent by an action of an acid, has a repeating unit (P) having a group generating an alcoholic hydroxyl group by degradation by action of the acid, and has no fluorine atom and/or an aromatic group; a compound generating the acid by irradiation of an active light or radiation rays; and a hydrophobic resin. The active light-sensitive or the radiation-sensitive resin composition contains at least a compound generating the acid containing no fluorine atom by irradiation of the active light or the radiation rays as the compound generating the acid by irradiation of the active light or the radiation rays.
摘要翻译：要解决的问题：提供显影缺陷性能，浸渍缺陷性能和边缘分辨能力优异的活性光敏性或辐射敏感性树脂组合物，并且能够形成具有良好形状的图案，并提供图案形成提供了一种有效的光敏性或辐射敏感性树脂组合物，其含有：通过酸作用使含有有机溶剂的显影剂的溶解性降低的树脂具有重复单元（ P）具有通过酸作用而降解而产生醇羟基的基团，并且不具有氟原子和/或芳族基团; 通过活性光或辐射线的照射产生酸的化合物; 和疏水性树脂。活性感光性树脂组合物或辐射敏感性树脂组合物至少含有通过照射活性光或辐射线而产生不含氟原子的酸的化合物，作为通过照射活性光或辐射线产生酸的化合物。

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